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    9926

    Abstract: No abstract text available
    Text: IC dependence of oscillating characteristics LC651I04F-2 FCR4.0MC5 - S Room Temp. Udd [U] 5 item a~e LC65II04F-2 - HH FCR4.0MC5 (Fig.a~e) Udd= 5 CUI 0- 0 Typical a, UIH/U1L [U] _ 5.5 11111 b 4 Viri Q- _ - b. 11lili ”Vr i « "•<? : cui •>à°


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    PDF LC65II04F-2 LC651I04F-2 9926

    fet e300

    Abstract: n fet e300 E300 fet L42752S stun
    Text: Tfl DËT| b4275E5 □□lñcic17 □ "J6427525 N E C ELECTRONICS INC -57-/3 98D 18997 FAST SW ITCHING N-CHANNEL S I L I C O N POWER p a c k a g e d im e n s io n s U nit: mm D MOS FET Features Suitable for switching power supplies, actuator controls and pulse circuits


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    PDF b427525 -53tc-15C T-39-13 J22536 fet e300 n fet e300 E300 fet L42752S stun

    ABB B45

    Abstract: No abstract text available
    Text: TOSHIBA TH M R2 N4Z-6/-7/-8 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 67,108,864-W ORD BY 16-BIT 128M Bytes Direct Rambus D R A M M O D U LE DESCRIPTION The THMR2N4Z is a 67,108,864-word by 16-bit direct rambus dynamic RAM module consisting of 4


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    PDF 864-WORD 16-BIT 16-bit TC59RM816MB 64M-wordXl6 64M-wordX16 600MHz_ 711MHz_ ABB B45

    662Q

    Abstract: R1910C
    Text: Repeaters R1910C I n - B u i Ic h u g P C S C D M A R ep eater ü1l15 I n v o u r PC S í i t L W ü j i ca n r ^ u l t In H •JL'.-. i ■ ili ■■ I: JS I-I. ! £UbS i :I.- : .1:1.! lüsl levemup, Sol1-:- youj indoor covtì^g«* fjiob Ii t i i s ■| .1m k! iich.I l' íin-ILv 'r1


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    PDF R1910C RS-232 NCWA12 662Q R1910C

    C2101

    Abstract: 30S3 T151 T760 T820 YG802C06
    Text: YG802C06<ioa : Outline D raw ings SCHOTTKY BARRIER DIODE Features Insulated package by fully m olding. • 1&VF Low V h• 7> 4''/* > V X £ -YV 1 k% \z.& s.' C o n nection D iag ram Su p er high speed sw itching. • T V - * - t t n High reliability by planer design.


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    PDF SC-67 l95t/R89 C2101 30S3 T151 T760 T820 YG802C06

    Untitled

    Abstract: No abstract text available
    Text: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 6 4 2 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. REVISIONS DIST LOC AD 25 LTR DESCRIPTION DATE MATERIAL: CONTACT MATERIAL: G L A S S - F IL L E D PH O SPH O R POLYESTER. COLOR:


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    PDF 0s12-0281-05 15NOV05 PL98-5 31MAR2000

    BU1507AX

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1507AX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers and computer monitors.


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    PDF BU1507AX BU1507AX

    B4002

    Abstract: No abstract text available
    Text: HIGH SPEED COMPARATOR FU JITSU A p r il 1 9 8 9 E d itio n 1.0 HIG H SPEED COMPARATOR The Fujitsu MB4002 is a Unsaturated High Speed Comparator. Its o u tp u t level is stable against power supply voltage and tem perature variation. • High Speed — 25 ns typ.


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    PDF MB4002 MB4002 B4002