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    11N60C3 Search Results

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    11N60C3 Price and Stock

    Infineon Technologies AG SPB11N60C3ATMA1

    MOSFET N-CH 650V 11A TO263-3
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    DigiKey SPB11N60C3ATMA1 Digi-Reel 3,498 1
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    SPB11N60C3ATMA1 Cut Tape 3,498 1
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    SPB11N60C3ATMA1 Reel 2,000 1,000
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    Avnet Americas SPB11N60C3ATMA1 Bulk 32 Weeks, 4 Days 1
    • 1 $3.64
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    Newark SPB11N60C3ATMA1 Bulk 1,963 1
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    EBV Elektronik SPB11N60C3ATMA1 16 Weeks 1,000
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    Infineon Technologies AG SPP11N60C3XKSA1

    MOSFET N-CH 650V 11A TO220-3
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    DigiKey SPP11N60C3XKSA1 Tube 325 1
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    Avnet Americas SPP11N60C3XKSA1 Tube 15 Weeks 500
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    Mouser Electronics SPP11N60C3XKSA1 427
    • 1 $2.92
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    • 100 $1.93
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    Newark SPP11N60C3XKSA1 Bulk 888 1
    • 1 $3.67
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    Rochester Electronics SPP11N60C3XKSA1 250 1
    • 1 $1.37
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    TME SPP11N60C3XKSA1 83 1
    • 1 $3.1
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    • 100 $1.81
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    EBV Elektronik SPP11N60C3XKSA1 16 Weeks 500
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    Win Source Electronics SPP11N60C3XKSA1 12,500
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    Infineon Technologies AG SPA11N60C3XKSA1

    MOSFET N-CH 600V 11A TO220-3
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    DigiKey SPA11N60C3XKSA1 Tube 90 1
    • 1 $3.83
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    Avnet Americas SPA11N60C3XKSA1 Tube 15 Weeks 500
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    • 1000 $0.92716
    • 10000 $0.89405
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    Newark SPA11N60C3XKSA1 Bulk 1
    • 1 $4.38
    • 10 $2.88
    • 100 $2.04
    • 1000 $1.56
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    Rochester Electronics SPA11N60C3XKSA1 1
    • 1 $1.48
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    • 100 $1.39
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    EBV Elektronik SPA11N60C3XKSA1 16 Weeks 500
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    Win Source Electronics SPA11N60C3XKSA1 5,690
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    Infineon Technologies AG SPA11N60C3IN

    MOSFET N-CH 650V 11A TO220-3-31
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    DigiKey SPA11N60C3IN Tube 500
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    Infineon Technologies AG SPI11N60C3XKSA1

    MOSFET N-CH 650V 11A TO262-3
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    DigiKey SPI11N60C3XKSA1 Tube
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    Rochester Electronics SPI11N60C3XKSA1 2,500 1
    • 1 $1.41
    • 10 $1.41
    • 100 $1.33
    • 1000 $1.2
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    EBV Elektronik SPI11N60C3XKSA1 21 Weeks 1
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    11N60C3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    11N60C3

    Abstract: transistor 11n60c3 11N60C 11N60 Q67040-S4395 Q67040-S4396 SPA11N60C3 SPB11N60C3 SPI11N60C3 SPP11N60C3
    Text: Preliminary data 11N60C3, 11N60C3 11N60C3, 11N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.38 Ω 11 A • Periodic avalanche rated


    Original     		PDF SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP11N60C3 11N60C3 transistor 11n60c3 11N60C 11N60 Q67040-S4395 Q67040-S4396 SPA11N60C3 SPB11N60C3 SPI11N60C3 SPP11N60C3

    Untitled

    Abstract: No abstract text available
    Text: 11N60C3 Preliminary data Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated R DS on 0.38 Ω • Extreme dv/dt rated ID 11 A •=High peak current capability


    Original     		PDF SPW11N60C3 P-TO247 Q67040-S4418 11N60C3

    11n60c3

    Abstract: 11N60 SDP06S60 SPW11N60C3 06161L 11N60C
    Text: 11N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V RDS(on) 0.38 Ω


    Original     		PDF SPW11N60C3 P-TO247 Q67040-S4418 11N60C3 11n60c3 11N60 SDP06S60 SPW11N60C3 06161L 11N60C

    11n60c3

    Abstract: transistor 11n60c3 SPA11N60C3E8185 SPI11N60C3 E8185
    Text: 11N60C3 11N60C3, 11N60C3, 11N60C3 E8185 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220


    Original     		PDF SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 P-TO220-3-31 PG-TO220FP PG-TO262 PG-TO220 PG-TO-220-3-31 11n60c3 transistor 11n60c3 SPA11N60C3E8185 SPI11N60C3

    Untitled

    Abstract: No abstract text available
    Text: 11N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A • New revolutionary high voltage technology • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability


    Original     		PDF SPW11N60C3 P-TO247 Q67040-S4418 11N60C3

    Untitled

    Abstract: No abstract text available
    Text: Preliminary data 11N60C3, 11N60C3 11N60C3 Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature New revolutionary high voltage technology Product Summary  Worldwide best R DS on in TO 220 VDS @ Tjmax 650 V  Ultra low gate charge


    Original     		PDF SPP11N60C3, SPB11N60C3 SPI11N60C3 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP11N60C3 P-TO220-3-1

    SPD06S60

    Abstract: 11N60C3 transistor 11n60c3
    Text: 11N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V • Periodic avalanche rated RDS on 0.38 Ω • Extreme dv/dt rated ID 11 A • High peak current capability


    Original     		PDF SPW11N60C3 P-TO247 Q67040-S4418 11N60C3 SPD06S60 11N60C3 transistor 11n60c3

    11n60c3

    Abstract: 11N60C SPA11N60C3 equivalent SPA11N60C3E8185 11N60 E8185 SPP11N60C3 SPA11N60C3 SPD06S60 transistor 11n60c3
    Text: 11N60C3 11N60C3, 11N60C3, 11N60C3 E8185 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220


    Original     		PDF SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 PG-TO220FP PG-TO262 PG-TO220 P-TO220-3-31 PG-TO-220-3-31 11n60c3 11N60C SPA11N60C3 equivalent SPA11N60C3E8185 11N60 E8185 SPP11N60C3 SPD06S60 transistor 11n60c3

    11n60c3

    Abstract: SPA11N60C3E8185 11N60C SPA11N60C3 equivalent SPA11N60C3 11N60 SPI11N60C3 transistor 11n60c3 Q67040-S4395 SPP11N60C3
    Text: 11N60C3 11N60C3, 11N60C3, 11N60C3 E8185 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220


    Original     		PDF SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 PG-TO220FP PG-TO262 PG-TO220 P-TO220-3-31 PG-TO-220-3-31 11n60c3 SPA11N60C3E8185 11N60C SPA11N60C3 equivalent 11N60 SPI11N60C3 transistor 11n60c3 Q67040-S4395 SPP11N60C3

    Untitled

    Abstract: No abstract text available
    Text: Preliminary data 11N60C3, 11N60C3 11N60C3, 11N60C3 Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge R DS on 0.38 Ω •=Periodic avalanche rated ID


    Original     		PDF SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP11N60C3

    11N60C3

    Abstract: 11N60C SPW11N60C3 AR1010
    Text: 11N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on 0.38 Ω • Extreme dv/dt rated


    Original     		PDF SPW11N60C3 P-TO247 Q67040-S4418 11N60C3 11N60C3 11N60C SPW11N60C3 AR1010

    Q67040-S4408

    Abstract: 11N60C AR1010
    Text: 11N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on 0.38 Ω • Extreme dv/dt rated


    Original     		PDF SPA11N60C3 P-TO220-3-31 11N60C3 P-TO220-3-31 Q67040-S4408 Q67040-S4408 11N60C AR1010

    11N60C3

    Abstract: transistor 11n60c3
    Text: 11N60C3, 11N60C3 11N60C3, 11N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1 P-TO263-3-2


    Original     		PDF SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: 11N60C3 transistor 11n60c3

    11N60C3

    Abstract: transistor 11n60c3
    Text: Preliminary data 11N60C3, 11N60C3 11N60C3, 11N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.38 Ω 11 A • Periodic avalanche rated


    Original     		PDF SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 P-TO220-3-31 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP11N60C3 11N60C3 transistor 11n60c3

    SP000216312

    Abstract: 11N6
    Text: 11N60C3 11N60C3, 11N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO262-3 PG-TO220 • Extreme dv/dt rated


    Original     		PDF SPP11N60C3 SPI11N60C3, SPA11N60C3 P-TO220-3-31 PG-TO220-3-31 PG-TO262-3 PG-TO220 PG-TO-220-3-31: SPI11N60C3 SP000216312 11N6

    transistor 11n60c3

    Abstract: SPP11N60C3 Q67040-S4408 11N60C3 11N60C
    Text: 11N60C3 11N60C3, 11N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO262-3-1 PG-TO220-3-1 • Extreme dv/dt rated


    Original     		PDF SPP11N60C3 SPI11N60C3, SPA11N60C3 P-TO220-3-31 PG-TO220-3-31 PG-TO262-3-1 PG-TO220-3-1 PG-TO-220-3-31: SPI11N60C3 transistor 11n60c3 Q67040-S4408 11N60C3 11N60C

    Untitled

    Abstract: No abstract text available
    Text: 11N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO263 • Extreme dv/dt rated • High peak current capability


    Original     		PDF SPB11N60C3 PG-TO263 SPB11N60C3 Q67040-S4396 11N60C3

    11n60c3

    Abstract: 11N60C SPB11N60C3 Q67040-S4396 SPD06S60 SPP11N60C3 4016A 11N60
    Text: 11N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO263 • Extreme dv/dt rated • High peak current capability


    Original     		PDF SPB11N60C3 PG-TO263 Q67040-S4396 11N60C3 11gerous 11n60c3 11N60C SPB11N60C3 Q67040-S4396 SPD06S60 SPP11N60C3 4016A 11N60

    11N60C3

    Abstract: 11N60C 11N60 SPP11N60C3 Q67042-S4403 TRANSISTOR SMD MARKING CODE 7A Q67040-S4395 Q67040-S4396 SPB11N60C3 SPI11N60C3
    Text: Preliminary data 11N60C3, 11N60C3 11N60C3 Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax


    Original     		PDF SPP11N60C3, SPB11N60C3 SPI11N60C3 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP11N60C3 Q67040-S4395 11N60C3 11N60C3 11N60C 11N60 SPP11N60C3 Q67042-S4403 TRANSISTOR SMD MARKING CODE 7A Q67040-S4395 Q67040-S4396 SPB11N60C3 SPI11N60C3

    Untitled

    Abstract: No abstract text available
    Text: 11N60C3 Preliminary data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V • Periodic avalanche rated RDS on 0.38 Ω • Extreme dv/dt rated ID 11 A • High peak current capability


    Original     		PDF SPW11N60C3 P-TO247 Q67040-S4418 11N60C3

    Untitled

    Abstract: No abstract text available
    Text: 11N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO263-3-2 • Extreme dv/dt rated • High peak current capability


    Original     		PDF SPB11N60C3 P-TO263-3-2 SPB11N60C3 Q67040-S4396 11N60C3

    Untitled

    Abstract: No abstract text available
    Text: 11N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO263 • Extreme dv/dt rated • High peak current capability


    Original     		PDF SPB11N60C3 PG-TO263 SPB11N60C3 Q67040-S4396 11N60C3

    11n60c3

    Abstract: transistor 11n60c3 11N60C SPB11N60C3 SPP11N60C3 Q67040-S4395 SPA11N60C3 SPI11N60C3 11N60
    Text: 11N60C3, 11N60C3 11N60C3, 11N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1


    Original     		PDF SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: 11n60c3 transistor 11n60c3 11N60C SPB11N60C3 SPP11N60C3 Q67040-S4395 SPA11N60C3 SPI11N60C3 11N60

    11n60c3

    Abstract: No abstract text available
    Text: 11N60C3 11N60C3, 11N60C3, 11N60C3 E8185 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge PG-TO220FP • Periodic avalanche rated PG-TO262 PG-TO220


    Original     		PDF SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 PG-TO220FP PG-TO262 PG-TO220 P-TO220-3-31 PG-TO-220-3-31 11n60c3