2SK1280
Abstract: No abstract text available
Text: 2SK1280 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- V SERIES Outline Drawings Features Include fast recovery diode High voltage Low driving power TO-3P Applications Motor controllers Inverters Choppers 3. Source JEDEC EIAJ Maximum ratings and characteristics
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2SK1280
SC-65
2SK1280
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2SK1280
Abstract: SC-65
Text: 2SK1280 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- V SERIES Outline Drawings Features Include fast recovery diode High voltage Low driving power TO-3P Applications Motor controllers Inverters Choppers 3. Source JEDEC EIAJ Maximum ratings and characteristics
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2SK1280
SC-65
2SK1280
SC-65
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Untitled
Abstract: No abstract text available
Text: APTMC60TLM14CAG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 13mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • SiC Schottky Diode
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APTMC60TLM14CAG
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Untitled
Abstract: No abstract text available
Text: APTMC60TLM14CAG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 13mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • SiC Schottky Diode
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APTMC60TLM14CAG
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SiC POWER MOSFET
Abstract: sic MOSFET APTMC60TLM14CAG
Text: APTMC60TLM14CAG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 14mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • SiC Schottky Diode
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APTMC60TLM14CAG
SiC POWER MOSFET
sic MOSFET
APTMC60TLM14CAG
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APW7181
Abstract: APM4010 apm*4015p APM4015 APM4010N apm*4010n APM4015P apm*4015
Text: APW7181 Full-Bridge Inverter Gate Driver Features General Description • Wide Input Voltage Range: 4.5V to 13.2V • Drives a Full-Bridge Inverter High-Side P- The APW7181 is designed to drive two high-side P-channel MOSFETs and two low-side N-channel MOSFETs in a
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APW7181
APW7181
JESD-22,
100mA
APM4010
apm*4015p
APM4015
APM4010N
apm*4010n
APM4015P
apm*4015
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Untitled
Abstract: No abstract text available
Text: 2SK1280 N-channel MOS-FET F-V Series 500V > Features 0,5Ω 18A 150W > Outline Drawing - Include Fast Recovery Diode - High Voltage - Low Driving Power > Applications - Motor Control - Inverters - Choppers > Maximum Ratings and Characteristics > Equivalent Circuit
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2SK1280
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2SK1280
Abstract: MOSFET 500V 18A
Text: 2SK1280 N-channel MOS-FET F-V Series 500V > Features 0,5Ω 18A 150W > Outline Drawing - Include Fast Recovery Diode - High Voltage - Low Driving Power > Applications - Motor Control - Inverters - Choppers > Maximum Ratings and Characteristics > Equivalent Circuit
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2SK1280
2SK1280
MOSFET 500V 18A
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bck-28
Abstract: TRANSFORMER bck zd103 lx6503 SWITCHING TRANSISTOR C144 PC101 optocoupler d313 TRANSISTOR equivalent DIODE zd101 sfh817a transistor D313 pin configuration
Text: TND360/D Rev. 0, February 2009 Up to 180 W High Voltage LCD TV Power and Integrated Inverter Supply 12 February 2009 2009 ON Semiconductor Disclaimer: ON Semiconductor is providing this reference design documentation package “AS IS” and the recipient assumes all risk associated with the use
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TND360/D
SM02B-BHSS-1-TB
IC300
LX6503-IDW
220pF
PIT125050-3551
PBT-07087-1322G
ON-MICRO-LIPS-32"
bck-28
TRANSFORMER bck
zd103
lx6503
SWITCHING TRANSISTOR C144
PC101 optocoupler
d313 TRANSISTOR equivalent
DIODE zd101
sfh817a
transistor D313 pin configuration
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NTE7232
Abstract: NTE2682 NTE2684 NTE7239 pdf/ES-F8DB-14A464-A
Text: NTE SEMICONDUCTORS ADDED SINCE MAY 2013 NTE PART NO. DESCRIPTION Datasheet Link NTE573-1 RECTIFIERS Schottky Barrier Rectifier, 100V, 5 Amp, DO‐201AD Case NTE573‐2 Schottky Barrier Rectifier, 200V, 5 Amp, DO‐201AD Case
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NTE573â
201ADÂ
com/specs/500to599/pdf/nte573â
NTE639
214AAÂ
NTE7232
NTE2682
NTE2684
NTE7239
pdf/ES-F8DB-14A464-A
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Untitled
Abstract: No abstract text available
Text: FZ06NRA045FH preliminary datasheet flowNPC 0 600V/30A Features flow0 12mm housing ● neutral point clamped inverter ● reactive power capability ● SiC buck diode ● clip-in pcb mounting ● low inductance layout Target Applications Schematic ● solar inverter
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FZ06NRA045FH
00V/30A
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Untitled
Abstract: No abstract text available
Text: Vishay Intertechnology, Inc. Alternative Energy Wind Turbines One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Alternative Energy Wind Turbines Main Inverters > 250 kW 4 Power Filters 5 Blade Pitch Controls
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com05
VMN-MS6761-1212
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Untitled
Abstract: No abstract text available
Text: FZ06NRA045FH01 preliminary datasheet flowNPC 0 600V/30A Features flow0 12mm housing ● neutral point clamped inverter ● reactive power capability ● clip-in pcb mounting ● low inductance layout Target Applications Schematic ● solar inverter ● UPS
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FZ06NRA045FH01
00V/30A
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10MQ100N
Abstract: AN732 Si9121 Si9121DY
Text: AN732 Vishay Siliconix Designing A High-Voltage Non-Isolated Buck-Boost Converter with the Si9121DY Nitin Kalje INTRODUCTION The Si9121DY is a non-isolated buck-boost converter IC, operating from a wide input voltage range of –10 to –60 V with minimal external components. This polarity inverter converts
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AN732
Si9121DY
Si9121
BAS21
Efficiency--Si9121-5
04-May-00
10MQ100N
AN732
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Untitled
Abstract: No abstract text available
Text: PD - 95123 IRFB17N50LPbF SMPS MOSFET Applications Switch Mode Power Supply SMPS Uninterruptible Power Supply High Speed Power Switching ZVS and High Frequency Circuit PWM Inverters Lead-Free l l l l l l VDSS HEXFET Power MOSFET RDS(on) typ. ID 0.28Ω
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IRFB17N50LPbF
O-220AB
O-220AB
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IRF igbt gate driver
Abstract: MOSFET IRF 630 SMD-247 st smd diode marking code ET MOSFET IRF 630 Datasheet MOSFET IRF 570 MOSFET IRF 603
Text: PD - 94351 IRFP17N50LS SMPS MOSFET HEXFET Power MOSFET Applications l l l l Switch Mode Power Supply SMPS Uninterruptible Power Supply High Speed Power Switching ZVS and High Frequency Circuit PWM Inverters l VDSS RDS(on) typ. Trr ID 500V 0.28Ω 170ns
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IRFP17N50LS
170ns
SMD-247
O-247AC.
SMD-247
P450S
IRFP450S
IRF igbt gate driver
MOSFET IRF 630
st smd diode marking code ET
MOSFET IRF 630 Datasheet
MOSFET IRF 570
MOSFET IRF 603
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10-FZ06BIA099FS-P893E
Abstract: No abstract text available
Text: FZ06BIA099FS target datasheet flowSOL 0 BI 600V/18A Features flow0 housing ● High efficiency ● Ultra fast switching frequency ● Low inductive design ● SiC in boost and H bridge Target Applications Schematic ● Transformerless solar inverters Types
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FZ06BIA099FS
00V/18A
10-FZ06BIA099FS-P893E
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TRIAC BTB 16 600 packaging
Abstract: STK5F1U3E2D-E STK5F4U3C2D-E
Text: ON Semiconductor Provides Products to Connect Smart Appliances to the Smart Grid Interface • Light & Proximity Sensing • Touch Switch Control • Display Drive & Control • Smart Appliance Communication Control • Inverter Drive • Motor Control • Motor Drive
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BRD8083-2
BRD8083/D
TRIAC BTB 16 600 packaging
STK5F1U3E2D-E
STK5F4U3C2D-E
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Schottky Diode 40V 6A
Abstract: 40QA kmb6d0np40qa marking 20
Text: SEMICONDUCTOR KMB6D0NP40QA TECHNICAL DATA N and P-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for Back-light Inverter.
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KMB6D0NP40QA
Fig12.
Schottky Diode 40V 6A
40QA
kmb6d0np40qa
marking 20
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circuit diagram electronic choke for tube light
Abstract: SBD15 lamp soft start circuit diagram mosfet for dc to ac inverter tube light choke circuits diagram AN8041S TUBE Light Choke connection diagram
Text: Voltage Regulators AN8041S Liquid crystal backlight control IC • Overview Unit: mm 10.1±0.3 0.15 9 4.2±0.3 6.5±0.3 16 (0° to 10°) 0.3 1 8 1.5±0.2 The AN8041S is an inverter control IC for liquid crystal backlight using PWM method. The output voltage of DC-DC converter and the current of cathode-ray tube can be controlled by using two error
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AN8041S
AN8041S
circuit diagram electronic choke for tube light
SBD15
lamp soft start circuit diagram
mosfet for dc to ac inverter
tube light choke circuits diagram
TUBE Light Choke connection diagram
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IRF 640 mosfet
Abstract: IRFP17N50L
Text: APPROVED IRFP17N50L SMPS MOSFET Applications l l l l Switch Mode Power Supply SMPS Uninterruptible Power Supply High Speed Power Switching ZVS and High Frequency Circuit PWM Inverters l VDSS HEXFET Power MOSFET RDS(on) typ. ID 0.28Ω 16A 500V Benefits
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IRFP17N50L
O-247AC
IRF 640 mosfet
IRFP17N50L
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Untitled
Abstract: No abstract text available
Text: APPROVED PD - TBD IRFP17N50L SMPS MOSFET HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS Zero Voltage Switching (ZVS) and High Frequency Circuit Uninterruptible Power Supply High Speed Power Switching PWM Inverters l l l l VDSS 500V RDS(on) typ.
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IRFP17N50L
170ns
O-247AC
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IRFP17N50L
Abstract: No abstract text available
Text: PD - 94322 IRFP17N50L SMPS MOSFET HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS Zero Voltage Switching (ZVS) and High Frequency Circuit Uninterruptible Power Supply High Speed Power Switching PWM Inverters l l l l VDSS 500V RDS(on) typ.
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IRFP17N50L
170ns
O-247AC
IRFP17N50L
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UJ35
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FK16SM-6 HIGH-SPEED SWITCHING USE FK16SM-6 »V d s s . •300V I TDS ON (MAX) 0.41 Q 16A i Id . • Integrated Fast Recovery Diode (MAX.) — 150ns APPLICATION Servo motor drive, Robot, UPS, Inverter Fluorecent
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FK16SM-6
150ns
UJ35
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