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    12 VOLTS CIRCUIT USING MOSFET Search Results

    12 VOLTS CIRCUIT USING MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    12 VOLTS CIRCUIT USING MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Ferroxcube 3C8

    Abstract: 204T250-3C8 pulse transformer driver ic Amp. mosfet 1000 watt MPS-U10 application note gate driver for h bridge mosfet core 3c8 U 126 204T250 ac step-up transformer winding awg
    Text: U-127 APPLICATION NOTE UNIQUE CHIP PAIR SIMPLIFIES ISOLATED HIGH SIDE SWITCH DRIVE John A. O’Connor Application Engineer Motor Control Circuits Abstract High voltage, high current N-channel MOSFETs, now widely accepted in the industry, have found their way into numerous high power designs. As their cost to performance ratio continually improves, gate drive


    Original     		PDF U-127 UC3724/UC3725, U-110 U-126 Ferroxcube 3C8 204T250-3C8 pulse transformer driver ic Amp. mosfet 1000 watt MPS-U10 application note gate driver for h bridge mosfet core 3c8 U 126 204T250 ac step-up transformer winding awg

    Ferroxcube 3C8

    Abstract: U-127 204T250-3C8 Dual secondary Transformer UNITRODE U-124 Unitrode U-127 CURRENT TRANSFORMER Isolated mosfet gate drive circuit Amp. mosfet 1000 watt coupler MOSFET DRIVER application note
    Text: U-127 APPLICATION NOTE UNIQUE CHIP PAIR SIMPLIFIES ISOLATED HIGH SIDE SWITCH DRIVE John A. O’Connor Application Engineer Motor Control Circuits Abstract High voltage, high current N-channel MOSFETs, now widely accepted in the industry, have found their way into numerous high power designs. As their cost to performance ratio continually improves, gate drive


    Original     		PDF U-127 UC3724/UC3725, Ferroxcube 3C8 U-127 204T250-3C8 Dual secondary Transformer UNITRODE U-124 Unitrode U-127 CURRENT TRANSFORMER Isolated mosfet gate drive circuit Amp. mosfet 1000 watt coupler MOSFET DRIVER application note

    E3P102

    Abstract: T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl
    Text: DL135/D Rev. 7, Apr-2001 Power MOSFETs Power MOSFETs DL135/D Rev. 7, Apr–2001  SCILLC, 2001 Previous Edition  1996 “All Rights Reserved” EZFET, MiniMOS & SMARTDISCRETES are trademarks of Semiconductor Components Industries, LLC SCILLC . ChipFET is a trademark of Vishay Siliconix.


    Original     		PDF DL135/D Apr-2001 r14525 DLD601 E3P102 T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl

    Untitled

    Abstract: No abstract text available
    Text: NTMD2C02R2 Preferred Device Power MOSFET 2 Amps, 20 Volts Complementary SO−8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the


    Original     		PDF NTMD2C02R2

    Untitled

    Abstract: No abstract text available
    Text: AO6601 30V Complementary MOSFET General Description Product Summary The AO6601 uses advanced trench technology to provide excellent RDS ON and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.


    Original     		PDF AO6601 AO6601 115m1 150m1 200m1

    AO6601

    Abstract: No abstract text available
    Text: AO6601 30V Complementary MOSFET General Description Product Summary The AO6601 uses advanced trench technology to provide excellent RDS ON and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.


    Original     		PDF AO6601 AO6601

    AO6601

    Abstract: 30V vgs
    Text: AO6601 30V Complementary MOSFET General Description Product Summary The AO6601 uses advanced trench technology to provide excellent RDS ON and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.


    Original     		PDF AO6601 AO6601 30V vgs

    Untitled

    Abstract: No abstract text available
    Text: NTMD2C02R2 Preferred Device Power MOSFET 2 Amps, 20 Volts Complementary SOIC−8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the


    Original     		PDF NTMD2C02R2 NTMD2C02R2/D

    NTMD2C02R2G

    Abstract: AN569 D2C02 NTMD2C02R2 SMD310
    Text: NTMD2C02R2 Preferred Device Power MOSFET 2 Amps, 20 Volts Complementary SOIC−8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the


    Original     		PDF NTMD2C02R2 NTMD2C02R2/D NTMD2C02R2G AN569 D2C02 NTMD2C02R2 SMD310

    d2c02

    Abstract: AN569 NTMD2C02R2 SMD310
    Text: NTMD2C02R2 Preferred Device Power MOSFET 2 Amps, 20 Volts Complementary SO–8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the


    Original     		PDF NTMD2C02R2 r14525 NTMD2C02R2/D d2c02 AN569 NTMD2C02R2 SMD310

    AOD609

    Abstract: aod609 datasheet
    Text: AOD609 Complementary Enhancement Mode Field Effect Transistor General Description Features The AOD609 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.


    Original     		PDF AOD609 AOD609 O-252-4L aod609 datasheet

    Untitled

    Abstract: No abstract text available
    Text: AOD609 Complementary Enhancement Mode Field Effect Transistor General Description Features The AOD609 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.


    Original     		PDF AOD609 AOD609 O-252-4L

    D2C01

    Abstract: No abstract text available
    Text: MMDF2C01HD Preferred Device Power MOSFET 2 Amps, 12 Volts Complementary SO−8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the


    Original     		PDF MMDF2C01HD r14525 MMDF2C01HD/D D2C01

    AN569

    Abstract: MMDF4C03HD MMDF4C03HDR2 SMD310
    Text: MOTOROLA Order this document by MMDF4C03HD/D SEMICONDUCTOR TECHNICAL DATA Advance Information Medium Power Surface Mount Products Complementary TMOS Field Effect Transistors MiniMOS devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process.


    Original     		PDF MMDF4C03HD/D AN569 MMDF4C03HD MMDF4C03HDR2 SMD310

    AN569

    Abstract: MMDF2C01HD MMDF2C01HDR2 D2C01 MiniMOS
    Text: MMDF2C01HD Preferred Device Power MOSFET 2 Amps, 12 Volts Complementary SO–8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain–


    Original     		PDF MMDF2C01HD r14525 MMDF2C01HD/D AN569 MMDF2C01HD MMDF2C01HDR2 D2C01 MiniMOS

    Untitled

    Abstract: No abstract text available
    Text: AO4618 40V Complementary MOSFET General Description Product Summary The AO4618 uses advanced trench technology to provide excellent RDS ON and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.


    Original     		PDF AO4618 AO4618

    AN569

    Abstract: MMDF3C03HD MMDF3C03HDR2 SMD310
    Text: MOTOROLA Order this document by MMDF3C03HD/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MMDF3C03HD Medium Power Surface Mount Products Complementary TMOS Field Effect Transistors MiniMOS devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process.


    Original     		PDF MMDF3C03HD/D MMDF3C03HD AN569 MMDF3C03HD MMDF3C03HDR2 SMD310

    Untitled

    Abstract: No abstract text available
    Text: AO4606 30V Complementary MOSFET General Description Product Summary The AO4606 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of


    Original     		PDF AO4606 AO4606

    Untitled

    Abstract: No abstract text available
    Text: MMDF4C03HD Power MOSFET 4 Amps, 30 Volts Complementary SO−8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the


    Original     		PDF MMDF4C03HD r14525 MMDF4C03HD/D

    TRANSISTOR LWW 20

    Abstract: TRANSISTOR LWW 17
    Text: MMDF3N02HD Preferred Device Power MOSFET 3 Amps, 20 Volts N−Channel SO−8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the


    Original     		PDF MMDF3N02HD TRANSISTOR LWW 20 TRANSISTOR LWW 17

    tektronix 576 curve tracer

    Abstract: tektronix type 576 curve tracer tektronix 475 short circuit tracer IRF630 AN957 curve tracer INT-944 AN-957 Tracer 176
    Text: AN-957 v.Int Measuring HEXFETCharacteristics (HEXFET is the trademark for International Rectifier Power MOSFETs) Topics covered: • • • • • • • • • • • • • • • • • • • Converting the nomenclature from bipolars to MOSFETs


    Original     		PDF AN-957 tektronix 576 curve tracer tektronix type 576 curve tracer tektronix 475 short circuit tracer IRF630 AN957 curve tracer INT-944 AN-957 Tracer 176

    S3P02

    Abstract: No abstract text available
    Text: MMSF3P02HD Preferred Device Power MOSFET 3 Amps, 20 Volts P−Channel SO−8 These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the


    Original     		PDF MMSF3P02HD S3P02

    AN569

    Abstract: D2C02 MMDF2C02HD MMDF2C02HDR2
    Text: MMDF2C02HD Preferred Device Power MOSFET 2 Amps, 20 Volts Complementary SO–8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain–


    Original     		PDF MMDF2C02HD r14525 MMDF2C02HD/D AN569 D2C02 MMDF2C02HD MMDF2C02HDR2

    68HC24

    Abstract: 14049UB mc14000 series 74LS240-74HC240 74LS04 Hex Inverter Gate function table 74LS04 NOT gate MC14049 IC AN1102 motorola AN1102-D CMOS IC 4069UB
    Text: by AN1102/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1102 Interfacing Power MOSFETs to Logic Devices Prepared by Ken Berringer Motorola Discrete Applications POWER MOSFET DRIVE CHARACTERISTICS Power M OSFETs are commonly used in switching applica­ tions due to their fast switching speeds and low static losses.


    OCR Scan     		PDF AN1102/D AN1102 25178T AN1102/D 68HC24 14049UB mc14000 series 74LS240-74HC240 74LS04 Hex Inverter Gate function table 74LS04 NOT gate MC14049 IC AN1102 motorola AN1102-D CMOS IC 4069UB