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    120 M13 Search Results

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    120 M13 Price and Stock

    JRH Electronics 440HS120M13

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    DigiKey 440HS120M13 Bulk 1
    • 1 $163.97
    • 10 $163.97
    • 100 $163.97
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    Murata Manufacturing Co Ltd XRCGB27M120F3M13R0

    Crystals 2.0x1.6x0.65mm 27.12MHz Crystal +/-30ppm Initial tolerance
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    Mouser Electronics XRCGB27M120F3M13R0 27,165
    • 1 $0.34
    • 10 $0.291
    • 100 $0.251
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    Kyocera AVX Components VCAS120660M131DP

    Varistors 50VAC 60VDC 1J 250pF 82 V 135V
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    Mouser Electronics VCAS120660M131DP 13,190
    • 1 $0.62
    • 10 $0.54
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    Kyocera AVX Components VC120665M131DP

    Varistors 50VAC 65VDC 1J 250pF 82 V 135V
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    Mouser Electronics VC120665M131DP 3,851
    • 1 $0.83
    • 10 $0.507
    • 100 $0.341
    • 1000 $0.272
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    YAGEO Corporation RC1206FR-071M13L

    Thick Film Resistors - SMD 1.13mOhms 1/4W 1206 1%
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    Mouser Electronics RC1206FR-071M13L 3,192
    • 1 $0.11
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    120 M13 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    QFP120-P-2020-1

    Abstract: FPT-120P-M13
    Text: QUAD FLAT L-LEADED PACKAGE 120 PIN PLASTIC FPT-120P-M13 EIAJ code : ∗QFP120-P-2020-1 120-pin plastic QFP Lead pitch 0.50mm Package width x package length 20 × 20mm Lead shape Gullwing Sealing method Plastic mold FPT-120P-M13 120-pin plastic QFP (FPT-120P-M13)


    Original     		FPT-120P-M13 QFP120-P-2020-1 120-pin FPT-120P-M13) QFP120-P-2020-1 FPT-120P-M13 PDF

    304331

    Abstract: AM 8815
    Text: Coaxial ZMSCQ-2-120+ ZMSCQ-2-120 Power Splitter/Combiner 2 Way-90° 50Ω 80 to 120 MHz Maximum Ratings Features Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C Power Input as a splitter • low insertion loss, 0.3 dB typ. • high isolation, 21 dB typ.


    Original     		Way-90° ZMSCQ-2-120+ ZMSCQ-2-120 ZMSCQ-2-120( M136532 ZMSCQ-2-120 304331 AM 8815 PDF

    120 M13

    Abstract: FPT-120P-M13 QFP120 QFP120-P-2020-1
    Text: QUAD FLAT L-LEADED PACKAGE FUJITSU SEMICONDUCTOR DATA SHEET 120 PIN PLASTIC To Top / Package Lineup / Package Index FPT-120P-M13 EIAJ code :∗QFP120-P-2020-1 120-pin plastic QFP Lead pitch 0.50 mm Package width x package length 20 × 20 mm Lead shape Gullwing


    Original     		FPT-120P-M13 QFP120-P-2020-1 120-pin FPT-120P-M13) F120013S-2C-3 120 M13 FPT-120P-M13 QFP120 QFP120-P-2020-1 PDF

    QFP-120P

    Abstract: FPT-120P-M13 QFP120-P-2020-1
    Text: QUAD FLAT L-LEADED PACKAGE FUJITSU SEMICONDUCTOR DATA SHEET 120 PIN PLASTIC FPT-120P-M13 EIAJ code :∗QFP120-P-2020-1 120-pin plastic QFP Lead pitch 0.50 mm Package width x package length 20 × 20 mm Lead shape Gullwing Sealing method Plastic mold FPT-120P-M13


    Original     		FPT-120P-M13 QFP120-P-2020-1 120-pin FPT-120P-M13) F120013S-2C-3 QFP-120P FPT-120P-M13 QFP120-P-2020-1 PDF

    Untitled

    Abstract: No abstract text available
    Text: High Directivity Monolithic Amplifier 0.5-2.5 GHz Product Features • 2.8V & 5V operation • Micro-miniature size .120”X.120” • Internal DC blocking at RF input and output • High directivity, 20 dB typ. • Low noise figure • Output power, up to +19 dBm typ.


    Original     		DQ849 PDF

    Untitled

    Abstract: No abstract text available
    Text: High Directivity Monolithic Amplifier 1.5-5.9 GHz Product Features • 2.8V & 5V operation • Micro-miniature size .120”X.120” • Internal DC blocking at RF input and output • High directivity, 20-24 dB typ. • Wide bandwidth, 1.5 to 5.9 GHz • Low noise figure


    Original     		DQ849 M134969 PDF

    Untitled

    Abstract: No abstract text available
    Text: High Directivity Monolithic Amplifier 0.5-2.5 GHz Product Features • 2.8V & 5V operation • Micro-miniature size .120”X.120” • Internal DC blocking at RF input and output • High directivity, 17 dB typ. • Low noise figure • Output power, up to +11.4 dBm typ.


    Original     		DQ849 PDF

    Untitled

    Abstract: No abstract text available
    Text: High Directivity Monolithic Amplifier 0.5-2.5 GHz Product Features • 2.8V & 5V operation • Micro-miniature size .120”X.120” • Internal DC blocking at RF input and output • High directivity, 20 dB typ. • Low noise figure • Output power, up to +17.9 dBm typ.


    Original     		DQ849 PDF

    m1349

    Abstract: of GaAs MESFET amplifier
    Text: High Directivity Monolithic Amplifier 0.5-2.5 GHz Product Features • 2.8V & 5V operation • Micro-miniature size .120”X.120” • Internal DC blocking at RF input and output • High directivity, 20 dB typ. • Low noise figure • Output power, up to +19 dBm typ.


    Original     		DQ849 2002/95/EC) m1349 of GaAs MESFET amplifier PDF

    Untitled

    Abstract: No abstract text available
    Text: High Directivity Monolithic Amplifier 0.5-2.5 GHz Product Features • 2.8V & 5V operation • Micro-miniature size .120”X.120” • Internal DC blocking at RF input and output • High directivity, 17 dB typ. • Low noise figure • Output power, up to +12.2 dBm typ.


    Original     		DQ849 2002/95/EC) PDF

    Untitled

    Abstract: No abstract text available
    Text: High Directivity Monolithic Amplifier 0.5-2.5 GHz Product Features • 2.8V & 5V operation • Micro-miniature size .120”X.120” • Internal DC blocking at RF input and output • High directivity, 17 dB typ. • Low noise figure • Output power, up to +11.4 dBm typ.


    Original     		DQ849 2002/95/EC) PDF

    Untitled

    Abstract: No abstract text available
    Text: High Directivity Monolithic Amplifier 1.5-5.9 GHz Product Features • 2.8V & 5V operation • Micro-miniature size .120”X.120” • Internal DC blocking at RF input and output • High directivity, 20-24 dB typ. • Wide bandwidth, 1.5 to 5.9 GHz • Low noise figure


    Original     		DQ849 PDF

    Untitled

    Abstract: No abstract text available
    Text: High Directivity Monolithic Amplifier 0.5-2.5 GHz Product Features • 2.8V & 5V operation • Micro-miniature size .120”X.120” • Internal DC blocking at RF input and output • High directivity, 17 dB typ. • Low noise figure • Output power, up to +12.2 dBm typ.


    Original     		DQ849 PDF

    Untitled

    Abstract: No abstract text available
    Text: High Directivity Monolithic Amplifier 0.5-2.5 GHz Product Features • 2.8V & 5V operation • Micro-miniature size .120”X.120” • Internal DC blocking at RF input and output • High directivity, 17 dB typ. • Low noise figure • Output power, up to +11.4 dBm typ.


    Original     		DQ849 PDF

    Untitled

    Abstract: No abstract text available
    Text: High Directivity Monolithic Amplifier 1.5-5.9 GHz Product Features • 2.8V & 5V operation • Micro-miniature size .120”X.120” • Internal DC blocking at RF input and output • High directivity, 20-24 dB typ. • Wide bandwidth, 1.5 to 5.9 GHz • Low noise figure


    Original     		DQ849 PDF

    Untitled

    Abstract: No abstract text available
    Text: High Directivity Monolithic Amplifier 0.5-2.5 GHz Product Features • 2.8V & 5V operation • Micro-miniature size .120”X.120” • Internal DC blocking at RF input and output • High directivity, 17 dB typ. • Low noise figure • Output power, up to +11.4 dBm typ.


    Original     		DQ849 2002/95/EC) PDF

    Untitled

    Abstract: No abstract text available
    Text: High Directivity Monolithic Amplifier 0.5-2.5 GHz Product Features • 2.8V & 5V operation • Micro-miniature size .120”X.120” • Internal DC blocking at RF input and output • High directivity, 20 dB typ. • Low noise figure • Output power, up to +17.9 dBm typ.


    Original     		DQ849 50nditions PDF

    MNA-7

    Abstract: No abstract text available
    Text: High Directivity Monolithic Amplifier 1.5-5.9 GHz Product Features • 2.8V & 5V operation • Micro-miniature size .120”X.120” • Internal DC blocking at RF input and output • High directivity, 20-24 dB typ. • Wide bandwidth, 1.5 to 5.9 GHz • Low noise figure


    Original     		DQ849 2002/95/EC) MNA-7 PDF

    Untitled

    Abstract: No abstract text available
    Text: High Directivity Monolithic Amplifier 0.5-2.5 GHz Product Features • 2.8V & 5V operation • Micro-miniature size .120”X.120” • Internal DC blocking at RF input and output • High directivity, 20 dB typ. • Low noise figure • Output power, up to +19 dBm typ.


    Original     		DQ849 2002/95/EC) PDF

    Untitled

    Abstract: No abstract text available
    Text: High Directivity Monolithic Amplifier 1.5-5.9 GHz Product Features • 2.8V & 5V operation • Micro-miniature size .120”X.120” • Internal DC blocking at RF input and output • High directivity, 20-24 dB typ. • Wide bandwidth, 1.5 to 5.9 GHz • Low noise figure


    Original     		DQ849 PDF

    Untitled

    Abstract: No abstract text available
    Text: High Directivity Monolithic Amplifier 0.5-2.5 GHz Product Features • 2.8V & 5V operation • Micro-miniature size .120”X.120” • Internal DC blocking at RF input and output • High directivity, 17 dB typ. • Low noise figure • Output power, up to +11.4 dBm typ.


    Original     		DQ849 PDF

    Untitled

    Abstract: No abstract text available
    Text: High Directivity Monolithic Amplifier 0.5-2.5 GHz Product Features • 2.8V & 5V operation • Micro-miniature size .120”X.120” • Internal DC blocking at RF input and output • High directivity, 17 dB typ. • Low noise figure • Output power, up to +12.2 dBm typ.


    Original     		DQ849 2002/95/EC) PDF

    Untitled

    Abstract: No abstract text available
    Text: Plug-In Power Splitter/Combiner 2 Way-90° 50Ω PSCQ-2-120+ 80 to 120 MHz Maximum Ratings Features Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C Power Input as a splitter 1W max. •฀low฀insertion฀loss,฀0.3฀dB฀typ.


    Original     		Way-90Â PSCQ-2-120+ M131858 PDF

    Untitled

    Abstract: No abstract text available
    Text: Raytheon Electronics Semiconductor Division TM C 2302 Image Manipulation Sequencer 40 MHz • 24-bit optional 36-bit positioning precision within the source image space, 48-bit internal precision • Low power CM OS process • Available in a 120-pin Plastic Pin Grid Array and 120-lead


    OCR Scan     		24-bit 36-bit) 48-bit 120-pin 120-lead C2302 TMC2301 C2246A C2249A C2242B PDF