12000H Search Results
12000H Price and Stock
Kyocera AVX Components CX3225SB12000H0FLJCCCRYSTAL 12.0000MHZ 12PF SMD |
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CX3225SB12000H0FLJCC | Digi-Reel | 15,354 | 1 |
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CX3225SB12000H0FLJCC | Reel | 18 Weeks | 3,000 |
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CX3225SB12000H0FLJCC | 4,256 |
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CX3225SB12000H0FLJCC | 16 Weeks | 3,000 |
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Kyocera AVX Components CX3225SB12000H0PSTC1CRYSTAL 12.0000MHZ 12PF SMD |
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CX3225SB12000H0PSTC1 | Cut Tape | 11,542 | 1 |
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CX3225SB12000H0PSTC1 | Reel | 18 Weeks | 3,000 |
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CX3225SB12000H0PSTC1 | 4,628 |
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CX3225SB12000H0PSTC1 | 16 Weeks | 3,000 |
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CX3225SB12000H0PSTC1 | 3,000 |
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Kyocera AVX Components CX3225GB12000H0KPSC1CRYSTAL 12.0000MHZ 12PF SMD |
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CX3225GB12000H0KPSC1 | Cut Tape | 182 | 1 |
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CX3225GB12000H0KPSC1 | Reel | 26 Weeks | 3,000 |
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CX3225GB12000H0KPSC1 | 3,738 |
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Festo ELGR-TB-55-1200-0HTOOTHED BELT AXIS |
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ELGR-TB-55-1200-0H | Bulk | 1 |
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Kyocera AVX Components CX5032GB12000H0PESZZCRYSTAL 12.0000MHZ 12PF SMD |
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CX5032GB12000H0PESZZ | Reel |
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CX5032GB12000H0PESZZ | Reel | 111 Weeks | 1,000 |
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CX5032GB12000H0PESZZ |
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CX5032GB12000H0PESZZ | Cut Tape | 1,000 |
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CX5032GB12000H0PESZZ | 1,000 | 4 |
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12000H Datasheets Context Search
Catalog Datasheet |
Type |
Document Tags |
PDF |
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Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS SU Long Life Series • 105℃ 10000~12000hrs long Life SU ■ Recommended Applications: Electronic lighting and power SP Long Life ■ Specifications Item Characteristics Category Temperature Range -25 ~ +105℃ Rated Voltage Range |
Original |
12000hrs 450VDC 120Hz 100KHz | |
Contextual Info: RHD 105˚C Use, Miniature, High-Ripple, Long Life Capacitors ● ● ● MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS GREEN CAP 105˚C 12000hours Higher ripple current. Guarantees 10000 to 12000 hours at 105℃. Best-suited to electronic ballast. High ripple, Long life |
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12000hours 120Hz) 120Hz 100kHz 2010/2011E | |
FX22H472
Abstract: FX22G153 fx22w FX22W153 FX22W123 FX22G123 FX22L102 FX22G682 FX22H392 JIS-C-5104-4
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12000h 120Hz JIS-C-5104-4 JIS-C-5102 FX22H472 FX22G153 fx22w FX22W153 FX22W123 FX22G123 FX22L102 FX22G682 FX22H392 JIS-C-5104-4 | |
K26400122_PM0F077
Abstract: k2640
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12000H K26420222 PM0N105 40x60 K26450102 PM0F060 40x77 K26450122 PM0F077 45x60 K26400122_PM0F077 k2640 | |
400WV
Abstract: JIS 0401
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12000HRS 120Hz) LHX-0401 400WV JIS 0401 | |
Contextual Info: User’s Manual 78K0R/KE3 16-bit Single-Chip Microcontrollers PD78F1142 μPD78F1143 μPD78F1144 μPD78F1145 μPD78F1146 The 78K0R/KE3 has an on-chip debug function. Do not use this product for mass production because its reliability cannot be guaranteed after the on-chip debug function |
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78K0R/KE3 16-bit PD78F1142 PD78F1143 PD78F1144 PD78F1145 PD78F1146 78K0R/KE3 U17854EJ6V0UD00 U17854EJ6V0UD | |
tmp95fy64
Abstract: TMP95FY64F tmp95fy CT 55H TLCS-90 LFFP100-P-1414-0 95fy64 QFP100P
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16-bit TMP95FY64F pl/dane/uklady-scalone/Tmp95fy64f pl/dane/ukladyscalone/Tmp95fy64f TMP95FY64 TMP95FY64 TMP95FY64F tmp95fy CT 55H TLCS-90 LFFP100-P-1414-0 95fy64 QFP100P | |
Contextual Info: A M D tl Am29DL800B 8 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS • Simultaneous Read/Write operations — Host system can program or erase in one bank, then immediately and simultaneously read from |
OCR Scan |
Am29DL800B 8-Bit/512 16-Bit) Am29DL800 FBB048. | |
Am29DL400BTContextual Info: MiN AR AMDZ1 Am29DL400B 4 Megabit 512 K x 8-Blt/2S6 K x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS • Simultaneous Read/Write operations Sector protection — Host system can program or erase in one bank, |
OCR Scan |
Am29DL400B 16-Bit) 44-Pin 16-038-S044-2 Am29DL400BT | |
energy tapping identifier wireless data acquisition
Abstract: interpolation CIC Filter iso 7811-9 sine wave pwm circuit pec 4179 Isdi cmos sensor edp 2339 ARM926EJ atmel sam4l ram schematic diagram
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256Kbytes 64-bit 42023B energy tapping identifier wireless data acquisition interpolation CIC Filter iso 7811-9 sine wave pwm circuit pec 4179 Isdi cmos sensor edp 2339 ARM926EJ atmel sam4l ram schematic diagram | |
UM0560
Abstract: STM8S105x6 STM8L STM8 bootloader STM8S105XX STM8S
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UM0560 UM0560 STM8S105x6 STM8L STM8 bootloader STM8S105XX STM8S | |
KFG2G16Q2A
Abstract: 0307h 0719h 63FBGA KFG2G16 onenand oneNand flash
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KFG2G16Q2A-DEBx) KFH4G16Q2A-DEBx) KFG2G16Q2A KFH4G16Q2A 80x11 KFG2G16Q2A) KFH4G16Q2A) KFG2G16Q2A 0307h 0719h 63FBGA KFG2G16 onenand oneNand flash | |
63FBGA
Abstract: KFG1G16Q2B onenand
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KFG1G16Q2B-DEBx) KFG1G16Q2B 80x11 KFG1G16x2B) 63FBGA KFG1G16Q2B onenand | |
TMP91FY12A
Abstract: TMP91FY12AF
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TMP91FY12A 16-Bit TMP91FY12AF TMP91FY12AF 100-pin 900/L1 TLCS-90/900 TMP91FY12A | |
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Contextual Info: DENSE-PAC 2 Megabit SRAM / 8 Megabit FLASH DP3SZ128512X16NY5 MICROSYSTEMS A D V A N C ED INFO RM ATIO N D E S C R IP T IO N : PIN -O U T DIAGRAM The D P3SZ12851 2X1 6 N Y 5 m o d u le s are a re v o lu tio n a ry new m em ory subsystem using D ense-P ac M ic ro s y s te m s ’ TSO P s ta c k in g |
OCR Scan |
DP3SZ128512X16NY5 P3SZ12851 30A193-00 | |
L33A SMD
Abstract: smd TRANSISTOR code b6 l36a adc 809 wk1 smd EA1 transistor smd PRQP0100JD-B smd code book R8C 702 TRANSISTOR smd l33a
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REJ09B0441-0010 R8C/L35A R8C/L36A R8C/L38A R8C/L35B R8C/L36B R8C/L38B L33A SMD smd TRANSISTOR code b6 l36a adc 809 wk1 smd EA1 transistor smd PRQP0100JD-B smd code book R8C 702 TRANSISTOR smd l33a | |
Contextual Info: OneNAND256 KFG5616x1A-xxB6 FLASH MEMORY OneNANDTM Specification Density 256Mb Part No. VCC(core & IO) Temperature PKG KFG5616Q1A-DEB6 1.8V(1.7V~1.95V) Extended 67FBGA(LF) KFG5616Q1A-PEB6 1.8V(1.7V~1.95V) Extended 48TSOP1 KFG5616D1A-DEB6 2.65V(2.4V~2.9V) Extended |
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OneNAND256 KFG5616x1A-xxB6) KFG5616Q1A-DEB6 67FBGA KFG5616Q1A-PEB6 256Mb 48TSOP1 KFG5616D1A-DEB6 KFG5616D1A-PEB6 | |
29DL400BT-70Contextual Info: PRELIMINARY AMDil Am29DL400B 4 Megabit 512 K x 8-Bit/256 K x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS • Simultaneous Read/Write operations ■ Sector protection — Host system can program or erase in one bank, |
OCR Scan |
Am29DL400B 8-Bit/256 16-Bit) 29DL400BT-70 | |
Contextual Info: TM SPANSION Flash Memory Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, |
Original |
F0212 | |
Samsung oneNand Mux
Abstract: samsung 1Gb nand flash SAMSUNG 256Mb NAND Flash Qualification Report KFM1216Q2M 48FBGA 8017h 2112b 1001Ah 803FH samsung 2GB Nand flash 121 pins
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MuxOneNAND512 KFM1216Q2M) MuxOneNAND512 KFM1216Q2M 48FBGA 512Mb Samsung oneNand Mux samsung 1Gb nand flash SAMSUNG 256Mb NAND Flash Qualification Report KFM1216Q2M 8017h 2112b 1001Ah 803FH samsung 2GB Nand flash 121 pins | |
transistor BC 55
Abstract: TR BC bc 163 FPT-48P-M19 FPT-48P-M20
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MBM29DL400TC/BC-55/70/90 MBM29DL400TC/BC DS05-20866-7E F0403 ProductDS05-20866-7E transistor BC 55 TR BC bc 163 FPT-48P-M19 FPT-48P-M20 | |
Contextual Info: MuxOneNAND1G KFM1G16Q2A-DEBx MuxOneNAND2G(KFN2G16Q2A-DEBx) FLASH MEMORY KFXXX16Q2A 1Gb MuxOneNAND A-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, |
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KFM1G16Q2A-DEBx) KFN2G16Q2A-DEBx) KFXXX16Q2A 80x11 KFG1G16Q2A) KFN2G16Q2A) | |
10072h
Abstract: structure chart of samsung company
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MuxOneNAND512 KFM1216Q2M) KFM1216Q2M 48FBGA 512Mb 10072h structure chart of samsung company | |
M50FLW080
Abstract: M50FLW080A M50FLW080B PLCC32 TSOP32
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M50FLW080A M50FLW080B 64KByte 33MHz M50FLW080A) M50FLW080B) M50FLW080 M50FLW080A M50FLW080B PLCC32 TSOP32 |