1200N Search Results

1200nm

Abstract: inGaAs L1200-35K32 L1200
Contextual Info: L1200-35K32 Stem type LED with high output power L1200-35K32 is an InGaAsP LED mounted on a TO-46 stem with a spherical glass lens being designed for high output power uses. On forward bias, it emits a spectral band of radiation, which peaks at 1200nm. ♦Absolute Maximum Ratings

Contextual Info: epitex Opto-Device & Custom LED Φ5 STEM TYPE NIR LED L1200 series Lead Pb Free Product – RoHS Compliant L1200-35 _ _ High Power InGaAsP NIR LED L1200-35 _ _ is an InGaAsP LED mounted on a metal stem and covered with epoxy resin or glass lens can. On forward bias it emits a spectral band of radiation, which peaks at 1200nm.

Contextual Info: epitex Opto-Device & Custom LED L1200-35 _ _ f5 STEM TYPE NIR LED L1200 series High Power InGaAsP NIR LED L1200-35 _ _ is an InGaAsP LED mounted on a metal stem and covered with epoxy resin or glass lens can. On forward bias it emits a spectral band of radiation, which peaks at 1200nm.

Contextual Info: epitex Opto-Device & Custom LED 5 MOLD LED LAMP L1200-03 Lead Pb Free Product – RoHS Compliant L1200-03 Infrared LED Lamp L1200-03 is an InGaAsP LED mounted on a lead frame with a clear epoxy lens. On forward bias, it emits a spectral band of radiation, which peaks at 1200nm.

Contextual Info: epitex Opto-Device & Custom LED L1200-35M32 Φ5 STEM TYPE NIR LED L1200-35M32 Stem type LED with high output power L1200-35M32 is an InGaAsP LED mounted on a TO-18 stem with a spherical glass lens being designed for high output power uses. On forward bias, it emits a spectral band of radiation, which peaks at 1200nm.

BTW69-200N

Abstract: scr 122 btw69200n 69200N LT 7237 SCR 1989
Contextual Info: 3ÜE D • 7^237 00314G2 b 'T-zs-n SCS-THOMSON IMiOraOiDOi BTW69-200N -> 1200N s G S-THOMSON THYRISTORS ■ ■ ■ ■ ■ GLASS PASSIVATED CHIP HIGH STABILITY AND RELIABILITY HIGH SURGE CAPABILITY HIGH ON-STATE CURRENT EASY MOUNTING ON HEATSINK DESCRIPTION

Contextual Info: y PD-2.468 International [tor]Rectifier HFA90NH40 Ultrafast, Soft Recovery Diode HEXFRED LUG TERMINAL ANODE Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters V r = 400V 1 ▼ T VF = 1.3V Qrr* = 1200nC

2732A INTEL

Abstract: 2732A eprom 2732A 2732A eprom eprom 2732A intel 2732A-3 2732A-2 INTEL IC 2732a intel 2732a 2732 memory chip
Contextual Info: in M 2732A 32K 4K X 8 UV ERASABLE PROM i Pin Compatible to 2764 EPROM 1200ns (2732A-2) Maximum Access Time . . . HMOS*-E Technology i Industry Standard P in o u t. . . JEDEC Approved >Compatible to High Speed 8m Hz 8086-2 MPU . . .Zero WAIT State Low Standby C urrent. . . 35 mA Max.

EUPEC t 1209

Abstract: T1200 450C T1209 EUPEC TT 60 f
Contextual Info: eupec S5E ]> T 1200N T1209N lypenrelhe/iype range T 1200 N /T 1209 N Elektrische Eigenschaften Electrical properties 34035^7 1200 Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Effektiver DurchlaBstrom Dauergrenzstrom Maximum permissible values

DSAGER00042

Contextual Info: ffiUNITRR G EM ! UL 1200N TJL 1200K jest ukladeffl wznaonlaoza posiada jqoym: - detektor koinoydenoyjny o malyoh znieksztaloenlach, - uklad sterowania wska£nikieoo poziomu sygnatu wej^oio- Uklad wzmacniacza p.oe. wego, - uklad wyciszania pray malym sygn&le wejgciowym*

Contextual Info: Panel Mounted Panel Mounted TVS L and C Circuit Filters DLT2/-/TVS Ordering Information Case Dimensions Please state Part Number e.g. 5 V working device, part number would be DLT2/L/1200n/LP/5/TVS. Remember to include the working voltage in the Part Number.

Contextual Info: 9EfrS0irS ‘on öNi Mv a a NO TE NUMBER OF CONTACT BX#12 : 6X#16 #1200NTACT 250VAC #16C0NTA0T 1OOVAC #12 23A MAX. per CONTACT #16 13A MAX. per CONTACT RATED VOLTAGE RATED CURRENT DIELECTRIC WITHSTANDING VOLTAGE : 2000VAC INSULATION RESISTANCE : 1OOOMQ MIN. (AT 500VDC)

Contextual Info: WIRE-WOUND CHIP INDUCTOR – CERAMIC / 1206 3216 1206HS Series (6.8 ~ 1200nH) Part Number 1206HS-6N8E_TS 1206HS-100E_TS 1206HS-120E_TS 1206HS-150E_TS 1206HS-180E_TS 1206HS-220E_TS 1206HS-240E_TS 1206HS-270E_TS 1206HS-330E_TS 1206HS-390E_TS 1206HS-470E_TS

HFA105NH60

Abstract: IRFP250
Contextual Info: Previous Datasheet Index Next Data Sheet PD-2.444 HFA105NH60 TM HEXFRED Ultrafast, Soft Recovery Diode LUG TERMINAL ANODE Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters VR = 600V VF = 1.5V a d Qrr * = 1200nC

SMT1200-23

Abstract: 1200nm
Contextual Info: epitex Opto-Device & Custom LED SMT1200-23 SMD Type NIR LED SMT1200-23 Lead Pb Free Product – RoHS Compliant High Performance NIR TOP IR LED SMT1200-23 consists of an InGaAsP LED mounted on the lead frame as TOP LED package, and is sealed with epoxy resin. It emits a spectral band of radiation at 1200nm.

Contextual Info: epitex Opto-Device & Custom LED 5 MOLD LED LAMP L1200-05 Lead Pb Free Product – RoHS Compliant L1200-05 Infrared LED Lamp L1200-05 is an InGaAsP LED mounted on a lead frame with a clear epoxy lens. On forward bias, it emits a spectral band of radiation, which peaks at 1200nm.

Contextual Info: epitex Opto-Device & Custom LED SMT1200 SMD TYPE NIR LED SMT1200 High Performance NIR TOP IR LED SMT1200 consists of an InGaAsP LED mounted on the lead frame as TOP LED package, and is sealed with epoxy resin. It emits a spectral band of radiation at 1200nm.

Contextual Info: High Power Infrared LED 1200 nm Lead(Pb)Free Product-RoHS Compliant L1200-06 Infrared LED Lamp L1200-06 is an InGaAsP LED mounted on a lead frame with a clear epoxy lens. On forward bias it emits a spectral band of radiation, which peaks at 1200nm. Features

Contextual Info: epitex Opto-Device & Custom LED L1200-35K32 Φ5 STEM TYPE NIR LED L1200-35K32 Stem type LED with high output power L1200-35K32 is an InGaAsP LED mounted on a TO-46 stem with a spherical glass lens being designed for high output power uses. On forward bias, it emits a spectral band of radiation, which peaks at 1200nm.

Contextual Info: epitex Opto-Device & Custom LED 3 MOLD LED LAMP L1200-33 Lead Pb Free Product – RoHS Compliant L1200-33 Infrared LED Lamp L1200-33 is an InGaAsP LED mounted on a lead frame with a clear epoxy lens. On forward bias, it emits a spectral band of radiation, which peaks at 1200nm.

Contextual Info: epitex Opto-Device & Custom LED L1200-35T52 Φ5 STEM TYPE LED LAMP L1200-35T52 High Power InGaAsP IR LED L1200-35T52 is InGaAsP LED mounted on TO-18 stem and hermetically sealed with flat glass can. On forward bias it emits a spectral band of radiation, which peaks at 1200nm.

WEGO

Abstract: 1200N ARW 4 T12-1 1200et Uj-100
Contextual Info: U N 1TR FI .C E M I UL 1200N UL 1200K j e s t ukladan w znaonlaoza posiadajqoym : - d e te k to r koinoydenoyjny o malyoh z n ie k sz ta io e n ia c h , - uklad stero w an ia wska£nikiem poziomu sygnsdu w e j^ o io wego, * uklad w yoiszania pray malym sygnale wej^clowym,

Contextual Info: International {^Rectifier P D -2.444 HFA105NH60 Ultrafast, Soft Recovèry Diode HEXFRED" LUG TERMINAL ANODE Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters V R = 600V ? ▼ T V F = 1.5V Qrr* = 1200nC

Contextual Info: International [îô^Rectifier HFA105NH60R H EXFRED " Ultrafast, Soft Recovery Diode PD-2.443 LUG TERMINAL CATHODE Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters V r = 600V V f = 1.5V i T i Qrr* = 1200nC