E80276
Abstract: VR300 VR-300
Text: MITSUBISHI FAST RECOVERY DIODE MODULES RM20DA/CA/C1A-XXF HIGH SPEED SWITCHING USE INSULATED TYPE RM20DA/CA/C1A-XXF • IDC • VRRM DC current . 20A Repetitive peak reverse voltage . 600/800/1000/1200V
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RM20DA/CA/C1A-XXF
600/800/1000/1200V
E80276
E80271
300/600V
E80276
VR300
VR-300
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RM20HA-XXF
Abstract: E80276
Text: MITSUBISHI FAST RECOVERY DIODE MODULES RM20HA-XXF HIGH SPEED SWITCHING USE INSULATED TYPE RM20HA-XXF • IDC • VRRM DC current . 20A Repetitive peak reverse voltage . 600/1000/1200V • trr Reverse recovery time . 0.8µs
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RM20HA-XXF
600/1000/1200V
E80276
E80271
RM20H
300/600V
RM20HA-XXF
E80276
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PDF
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Untitled
Abstract: No abstract text available
Text: SILICON CARBIDE POWER SCHOTTKY RECTIFIER DIODE SML020DH12 • 1200V, 20A 2x10A Rectifier Diodes • High Temperature Operation Tj = 200°C • Effective Zero Reverse and Forward Recovery • High Frequency Operation • High Speed Low Loss Switching •
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SML020DH12
2x10A)
O-258AA)
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schottky rectifier diode
Abstract: LE17 0835 SWITCHING schottky diode 1200v
Text: SILICON CARBIDE POWER SCHOTTKY RECTIFIER DIODE SML020DH12 • 1200V, 20A 2x10A Rectifier Diodes • High Temperature Operation Tj = 200°C • Effective Zero Reverse and Forward Recovery • High Frequency Operation • High Speed Low Loss Switching •
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SML020DH12
2x10A)
O-258AA)
schottky rectifier diode
LE17
0835 SWITCHING
schottky diode 1200v
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PDF
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RG105
Abstract: ir igbt 1200V 10A SS850 sa wf IRGP20B120UD-E
Text: PD- 93817 IRGP20B120UD-E UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 1200V • UltraFast Non Punch Through NPT Technology • Low Diode VF (1.67V Typical @ 20A & 25°C) • 10 µs Short Circuit Capability
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IRGP20B120UD-E
O-247AD
20KHz
RG105
ir igbt 1200V 10A
SS850
sa wf
IRGP20B120UD-E
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PDF
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TRANSISTOR BIPOLAR 400V 20A
Abstract: igbt 20A 1200v IRGPH40S
Text: Preliminary Data Sheet PD - 9.1085 IRGPH40S INSULATED GATE BIPOLAR TRANSISTOR Features Standard Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400Hz VCES = 1200V VCE(sat) ≤ 3.0V G @VGE = 15V, IC = 20A
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IRGPH40S
400Hz)
O-247AC
TRANSISTOR BIPOLAR 400V 20A
igbt 20A 1200v
IRGPH40S
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PDF
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power Schottky bridge
Abstract: Schottky bridge SPA555 SPA555M SPA555N spa555ml
Text: SPA555 Series Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET 20A / 1000 - 1200V SiC SCHOTTKY SINGLE PHASE BRIDGE Part Number / Ordering Information 1/
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SPA555
SPA555
35rice,
MIL-PRF-19500.
SPA555M;
SPA555ML;
SPA555MSM
SPA555N;
SPA555NL;
SPA555NSM
power Schottky bridge
Schottky bridge
SPA555M
SPA555N
spa555ml
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PDF
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TRANSISTOR BIPOLAR 400V 20A
Abstract: igbt 20A 1200v IRGPH40S igbt 1200V 20A
Text: Preliminary Data Sheet PD - 9.1085 IRGPH40S INSULATED GATE BIPOLAR TRANSISTOR Features Standard Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400Hz VCES = 1200V VCE(sat) ≤ 3.0V G @VGE = 15V, IC = 20A
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IRGPH40S
400Hz)
O-247AC
TRANSISTOR BIPOLAR 400V 20A
igbt 20A 1200v
IRGPH40S
igbt 1200V 20A
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PDF
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IRGP20B120UD-E
Abstract: IGBT Transistor 1200V, 25A
Text: PD- 93817 IRGP20B120UD-E UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 1200V • UltraFast Non Punch Through NPT Technology • Low Diode VF (1.67V Typical @ 20A & 25°C) • 10 µs Short Circuit Capability
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IRGP20B120UD-E
O-247AD
20KHz
IRGP20B120UD-E
IGBT Transistor 1200V, 25A
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PDF
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Untitled
Abstract: No abstract text available
Text: SPA555 Series Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET 20A / 1000 - 1200V SiC SCHOTTKY SINGLE PHASE BRIDGE Part Number / Ordering Information 1/
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SPA555
SPA555
MIL-PRF-19500.
SPA555M;
SPA555ML;
SPA555MSM
SPA555N;
SPA555NL;
SPA555NSM
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PDF
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30TPS12PBF
Abstract: 30TPS 30TPS12
Text: Bulletin I2180 11/04 SAFEIR Series 30TPS12PbF PHASE CONTROL SCR VT < 1.3V @ 20A Lead-Free "PbF" suffix ITSM = 300A VRRM= 1200V Description/ Features The 30TPS12PbF SAFEIR series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has
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I2180
30TPS12PbF
30TPS12PbF
O-247
30TPS
30TPS12
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PDF
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SPA555N
Abstract: SPA555 SPA555M spa555ml
Text: SPA555 Series Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET 20A / 1000 - 1200V SiC SCHOTTKY SINGLE PHASE BRIDGE Part Number / Ordering Information 1/
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SPA555
SPA555
SPA555M;
SPA555ML;
SPA555MSM
SPA555N;
SPA555NL;
SPA555NSM
SPA555N
SPA555M
spa555ml
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PDF
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Untitled
Abstract: No abstract text available
Text: Bulletin I2180 rev A 07/06 SAFEIR Series 30TPS.PbF PHASE CONTROL SCR VT < 1.3V @ 20A Lead-Free "PbF" suffix ITSM = 300A VRRM= 800 - 1200V Description/ Features The 30TPS.PbF SAFEIR series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has
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I2180
30TPS.
O-247
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PDF
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30TPS08PBF
Abstract: 30TPS12 30TPS P035H
Text: Bulletin I2180 rev A 07/06 SAFEIR Series 30TPS.PbF PHASE CONTROL SCR VT < 1.3V @ 20A Lead-Free "PbF" suffix ITSM = 300A VRRM= 800 - 1200V Description/ Features The 30TPS.PbF SAFEIR series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has
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I2180
30TPS.
12-Mar-07
30TPS08PBF
30TPS12
30TPS
P035H
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PDF
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Untitled
Abstract: No abstract text available
Text: Bulletin I2180 rev A 07/06 SAFEIR Series 30TPS.PbF PHASE CONTROL SCR VT < 1.3V @ 20A Lead-Free "PbF" suffix ITSM = 300A VRRM= 800 - 1200V Description/ Features The 30TPS.PbF SAFEIR series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has
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I2180
30TPS.
08-Mar-07
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PDF
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p623f
Abstract: 600V1200V p623
Text: Standard H-Bridge Module fastPACK 0 H 2nd gen Features - H-bridge 600V.1200V / 20A.100A Standard- and high speed IGBT´s or MOS-FET Ultra low inductive design Vincotech - Power Flow Through for simple PCB routing Vincotech - Clip In, the reliable interconnection between PCB, module and
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V23990-P62x-Fxx-U-02-14
P623-F04-PM
P623-F14-PM
P623-F24-PM
P624-F24-PM
P625-F24-PM
p623f
600V1200V
p623
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PDF
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NTE5374
Abstract: NTE5375 0937m
Text: NTE5374 & NTE5375 Silicon Controlled Rectifier SCR for High Speed Switching Maximum Ratings and Electrical Characteristics: (TJ = +125°C unless otherwise specified) Repetitive Peak Voltages, VDRM, VRRM NTE5374 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
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NTE5374
NTE5375
NTE5374
NTE5375
0937m
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PDF
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20A igbt
Abstract: igbt 1200V 20A igbt 20A 1200v igbt 40a 600v current diode 600v 20a IGBT 600v 20a diode IGBT 120A 1200V diode 20khz DIODE 20A 600V
Text: PROVISIONAL IRGP20B120UD-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT C • Ultrafast npt IGBT Technology • 10 µs Short Circuit capability • Square RBSOA. • New Generation of Antiparallel diode with low Vf
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IRGP20B120UD-E
20KHz
20A igbt
igbt 1200V 20A
igbt 20A 1200v
igbt 40a 600v
current diode
600v 20a IGBT
600v 20a diode
IGBT 120A 1200V
diode 20khz
DIODE 20A 600V
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PDF
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semikron skiip nab 126
Abstract: Semikron skiip 24 nab welding inverter 100A WITH PFC brake rectifier motor V23990-P630-A-PM 12 nab 126 v1 semikron skiip 23 nab 126 v1 V23990-P517-C-PM semikron skiip nab 12 V23990-P760-A-PM
Text: Power Modules Power Integrated Module Solutions Vincotech is one of the market leaders in Power Modules.Target applications include motor drives, power supplies and welding equipment. With 13 different standard housings and more than 35 standard product families, Vincotech offers a wide power
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Vincotech-013-0508
ISO9001
TS16949
semikron skiip nab 126
Semikron skiip 24 nab
welding inverter 100A WITH PFC
brake rectifier motor
V23990-P630-A-PM
12 nab 126 v1
semikron skiip 23 nab 126 v1
V23990-P517-C-PM
semikron skiip nab 12
V23990-P760-A-PM
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PDF
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Untitled
Abstract: No abstract text available
Text: NTE5374 & NTE5375 Silicon Controlled Rectifier SCR for High Speed Switching Maximum Ratings and Electrical Characteristics: (TJ = +125°C unless otherwise specified) Repetitive Peak Voltages, VDRM, VRRM NTE5374 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
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NTE5374
NTE5375
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PDF
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NTE5374
Abstract: 1200v scr NTE5375 300A 1200V SCR 355a transistor 4700
Text: NTE5374 & NTE5375 Silicon Controlled Rectifier SCR for High Speed Switching, 275 Amp, TO93 Maximum Ratings and Electrical Characteristics: (TJ = +125°C unless otherwise specified) Repetitive Peak Voltages, VDRM, VRRM NTE5374 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
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NTE5374
NTE5375
NTE5374
1200v scr
NTE5375
300A 1200V SCR
355a transistor
4700
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PDF
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NTE5595
Abstract: NTE5594 NTE5596
Text: NTE5561, NTE5594 thru NTE5596 Silicon Controlled Rectifier SCR , 850A Ratings: (Maximum Values at TJ = +125°C unless otherwise specified) Repetitive Peak Voltage, VDRM NTE5561 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1600V
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NTE5561,
NTE5594
NTE5596
NTE5561
NTE5594
NTE5595
NTE5596
NTE5595
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PDF
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NTE5561
Abstract: scr 1a 1200V NTE5595 NTE5594 NTE5596 scr 1a 1200V datasheet
Text: NTE5561, NTE5594 thru NTE5596 Silicon Controlled Rectifier SCR 850 Amp, TO200AC Ratings: (Maximum Values at TJ = +125°C unless otherwise specified) Repetitive Peak Voltage, VDRM NTE5561 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1600V
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NTE5561,
NTE5594
NTE5596
O200AC
NTE5561
NTE5594
NTE5595
NTE5561
scr 1a 1200V
NTE5595
NTE5596
scr 1a 1200V datasheet
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PDF
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Untitled
Abstract: No abstract text available
Text: PD- 95897 IRGP20B120U-EP INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features UltraFast Non Punch Through NPT Technology 10 µs Short Circuit capability Square RBSOA Positive VCE(on) Temperature Coefficient Extended lead TO-247 package
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IRGP20B120U-EP
O-247
20KHz
O-247AD
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PDF
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