Untitled
Abstract: No abstract text available
Text: V23990-P629-L59-PM preliminary datasheet flowBOOST 1200V/40A Features flow0 17mm housing ● High efficiency dual boost ● Ultra fast switching frequency ● Low Inductance Layout ● 1200V IGBT and 1200V Si diode Target Applications Schematic ● solar inverter
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V23990-P629-L59-PM
200V/40A
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PDF
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Untitled
Abstract: No abstract text available
Text: V23990-P629-F73-PM preliminary datasheet flowBOOST 1200V/40A Features flow0 12mm housing ● High efficiency dual boost ● Ultra fast switching frequency ● Low Inductance Layout ● 1200V IGBT and 1200V Si diode Target Applications Schematic ● solar inverter
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Original
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V23990-P629-F73-PM
200V/40A
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PDF
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Untitled
Abstract: No abstract text available
Text: V23990-P629-L63-PM flow BOOST 0 1200V/50A Features flow 0 12mm housing ● High efficiency dual boost ● Ultra fast switching frequency ● Low Inductance Layout ● 1200V IGBT and 1200V SiC diode ● Antiparallel IGBT protection diode with high current Target Applications
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Original
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V23990-P629-L63-PM
200V/50A
V23990-P629-L63
D7-D10
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PDF
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Untitled
Abstract: No abstract text available
Text: V23990-P629-L99-PM datasheet flow BOOST 0 1200V/40A Features flow 0 17mm housing ● Ultra fast switching frequency ● Low Inductance Layout ● 1200V IGBT and 1200V SiC diode ● Antiparallel IGBT protection diode with high current Target Applications ● solar inverter
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Original
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V23990-P629-L99-PM
200V/40A
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PDF
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V23990-P629
Abstract: V23990-P629-F62-PM
Text: V23990-P629-F62-PM / V23990-P629-F629-PM V23990-P629-F628Y-PM / V23990-P629-F629Y-PM flow BOOST 0 1200V/40A Features flow0 12mm and 17mm housing ● High efficiency dual boost ● Ultra fast switching frequency ● Low Inductance Layout ● 1200V IGBT and 1200V SiC diode
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Original
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V23990-P629-F62-PM
V23990-P629-F629-PM
V23990-P629-F628Y-PM
V23990-P629-F629Y-PM
200V/40A
V23990-P629-F62-PM
V23990-P629-F628Y-PM
V23990-P629
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PDF
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M81738FP
Abstract: half bridge driver
Text: PRELIMINARY < HVIC > M81738FP 1200V HIGH VOLTAGE HALF BRIDGE DRIVER DESCRIPTION M81738FP is 1200V high voltage Power MOSFET and IGBT module driver for half bridge applications. PIN CONFIGURATION TOP VIEW FEATURES Floating supply voltage up to 1200V Low quiescent power supply current
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M81738FP
M81738FP
24pin
half bridge driver
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PDF
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M81019FP
Abstract: M81738FP M81738 M81019 inverter igbt circuit diagrams in bridge
Text: PRELIMINARY < HVIC > M81738FP 1200V HIGH VOLTAGE HALF BRIDGE DRIVER DESCRIPTION M81738FP is 1200V high voltage Power MOSFET and IGBT module driver for half bridge applications. PIN CONFIGURATION TOP VIEW FEATURES ●Floating supply voltage up to 1200V ● Low quiescent power supply current
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M81738FP
M81738FP
24pin
M81019FP
M81738
M81019
inverter igbt circuit diagrams in bridge
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PDF
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SIDC08D120F6
Abstract: No abstract text available
Text: Preliminary SIDC08D120F6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC08D120F6 1200V IF C Applications:
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Original
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SIDC08D120F6
Q67050-A4169A001
4355M,
SIDC08D120F6
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PDF
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SIDC06D120E6
Abstract: No abstract text available
Text: Preliminary SIDC06D120E6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 130 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC06D120E6 1200V IF C Applications:
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Original
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SIDC06D120E6
Q67050-A4122A001
4342P,
SIDC06D120E6
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PDF
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SIDC03D120F6
Abstract: No abstract text available
Text: Preliminary SIDC03D120F6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC03D120F6 1200V IF C Applications:
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Original
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SIDC03D120F6
Q67050-A4168A001
4375M,
SIDC03D120F6
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PDF
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SIDC03D120H6
Abstract: No abstract text available
Text: Preliminary SIDC03D120H6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC03D120H6 1200V IF C Applications:
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Original
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SIDC03D120H6
Q67050-A4156A001
4372S,
SIDC03D120H6
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PDF
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SIDC06D120F6
Abstract: No abstract text available
Text: Preliminary SIDC06D120F6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC06D120F6 1200V IF C Applications:
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Original
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SIDC06D120F6
Q67050-A4183A001
4345M,
SIDC06D120F6
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PDF
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SIDC06D120E6
Abstract: No abstract text available
Text: Preliminary SIDC06D120E6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 130 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC06D120E6 1200V IF C Applications:
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Original
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SIDC06D120E6
Q67050-A4122A001
4342P,
SIDC06D120E6
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PDF
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1200v 3A
Abstract: SIDC03D120H6
Text: Preliminary SIDC03D120H6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC03D120H6 1200V IF C Applications:
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Original
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SIDC03D120H6
Q67050-A4156A001
4372S,
1200v 3A
SIDC03D120H6
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PDF
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SIDC03D120F6
Abstract: No abstract text available
Text: Preliminary SIDC03D120F6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC03D120F6 1200V IF C Applications:
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Original
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SIDC03D120F6
Q67050-A4168A001
4375M,
SIDC03D120F6
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PDF
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SIDC08D120F6
Abstract: No abstract text available
Text: Preliminary SIDC08D120F6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC08D120F6 1200V IF C Applications:
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Original
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SIDC08D120F6
Q67050-A4169A001
4355M,
SIDC08D120F6
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PDF
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Untitled
Abstract: No abstract text available
Text: XTRM Series XTR1K1210 HIGH-TEMPERATURE 10A, 1200V SIC SCHOTTKY DIODE FEATURES DESCRIPTION ▲ Reverse voltage up to 1200V. ▲ Operational beyond the -60°C to +230°C temperature range. ▲ Positive temperature coefficient for safe operation and ease paralleling.
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Original
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XTR1K1210
XTR1K1210
DS-00275-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information GenX3TM 1200V IGBTs w/ Diode IXGK50N120C3H1 IXGX50N120C3H1 High-Speed PT IGBTs for 20 - 50 kHz Switching VCES = IC100 = VCE sat ≤ tfi(typ) = 1200V 50A 4.2V 64ns TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES
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IXGK50N120C3H1
IXGX50N120C3H1
IC100
O-264
IF110
50N120C3H1
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PDF
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Untitled
Abstract: No abstract text available
Text: 1 3 2 1 - Anode 1 2 - Common Cathode Back of Case - Cathode 3 - Anode 2 APT15D120BCT 1200V 15A APT15D120BCTG 1200V 15A *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS
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APT15D120BCT
APT15D120BCTG
O-247
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PDF
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APT10035LLL
Abstract: APT15D120BCTG
Text: 1 3 2 1 - Anode 1 2 - Common Cathode Back of Case - Cathode 3 - Anode 2 APT15D120BCT 1200V 15A APT15D120BCTG 1200V 15A *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS
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Original
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APT15D120BCT
APT15D120BCTG
O-247
APT10035LLL
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXYH40N120B3D1 Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 1200V 40A 2.9V 183ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR
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IC110
IXYH40N120B3D1
183ns
O-247
IF110
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PDF
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Untitled
Abstract: No abstract text available
Text: RURP8120 Semiconductor 8A, 1200V U ltrafast Diode April 1995 Package Features • U Itrafast with Soft Recovery. <100ns JEDEC TO-220AC • Operating Temperature. +175°C • Reverse
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OCR Scan
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RURP8120
100ns
O-220AC
TA49095)
100ns)
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PDF
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RUR15120
Abstract: No abstract text available
Text: RURP15120 Semiconductor 15A, 1200V Ultrafast Diode April 1995 Package Features • U Itrafast with Soft Recovery. <100ns JEDEC TQ-220AC • Operating Temperature. +175°C ANODE CATHODE • Reverse
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OCR Scan
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RURP15120
100ns
TQ-220AC
TA49097)
100ns)
RUR15120
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PDF
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RHR75120
Abstract: RHR75120C TO-264-aa RHR1Y75120CC TA49042
Text: RHR1Y75120CC October 1995 75A, 1200V Hyperfast Dual Diode Features Package • Hyperfast with Soft R ecovery. <85ns • Operating Tem p eratu re. . . +175 C • Reverse V oltag e. .1200V JEDEC TO-264AA ANODE 2
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OCR Scan
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RHR1Y75120CC
RHR1Y75120CC
O-264AA
430EB71
Q0ti37fll
RHR75120
RHR75120C
TO-264-aa
TA49042
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PDF
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