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    120N25 Search Results

    120N25 Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    UPD120N25T1B-AZ Renesas Electronics Corporation 3 Terminal Regulators, POMM, / Visit Renesas Electronics Corporation
    UPD120N25TA-E1-A Renesas Electronics Corporation 3 Terminal Regulators, MM, / Visit Renesas Electronics Corporation
    UPD120N25TA-E1-AT Renesas Electronics Corporation 3 Terminal Regulators, MM, / Visit Renesas Electronics Corporation
    UPD120N25T1B-E1-AZ Renesas Electronics Corporation 3 Terminal Regulators, POMM, / Visit Renesas Electronics Corporation
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    120N25 Price and Stock

    Rochester Electronics LLC UPD120N25T1B-E1-AZ

    IC REG LINEAR FIXED LDO REG
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey UPD120N25T1B-E1-AZ Bulk 179,839 1
    • 1 $0.02
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    Diodes Incorporated AP2120N-2.5TRG1

    IC REG LINEAR 2.5V 150MA SOT23
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    DigiKey AP2120N-2.5TRG1 Digi-Reel 4,985 1
    • 1 $0.34
    • 10 $0.209
    • 100 $0.1311
    • 1000 $0.08677
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    AP2120N-2.5TRG1 Cut Tape 4,985 1
    • 1 $0.34
    • 10 $0.209
    • 100 $0.1311
    • 1000 $0.08677
    • 10000 $0.08677
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    AP2120N-2.5TRG1 Reel 3,000 3,000
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    • 10000 $0.07324
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    Avnet Americas AP2120N-2.5TRG1 Reel 3,000
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    Newark AP2120N-2.5TRG1 Cut Tape 440 5
    • 1 $0.405
    • 10 $0.302
    • 100 $0.175
    • 1000 $0.093
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    TME AP2120N-2.5TRG1 1
    • 1 $0.3496
    • 10 $0.2417
    • 100 $0.1152
    • 1000 $0.0655
    • 10000 $0.0528
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    Avnet Asia AP2120N-2.5TRG1 24 Weeks 6,000
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    Avnet Silica AP2120N-2.5TRG1 10 Weeks 3,000
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    Littelfuse Inc IXFT120N25X3HV

    MOSFET N-CH 250V 120A TO268HV
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFT120N25X3HV Tube 3,120 1
    • 1 $13.91
    • 10 $13.91
    • 100 $8.99133
    • 1000 $13.91
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    Newark IXFT120N25X3HV Bulk 300
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    RS IXFT120N25X3HV Bulk 8 Weeks 30
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    • 100 $12.95
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    ROHM Semiconductor RCJ120N25TL

    MOSFET N-CH 250V 12A LPT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RCJ120N25TL Cut Tape 884 1
    • 1 $1.46
    • 10 $0.987
    • 100 $1.46
    • 1000 $0.56072
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    Avnet Americas RCJ120N25TL Reel 1,000
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    Mouser Electronics RCJ120N25TL
    • 1 $1.87
    • 10 $1.56
    • 100 $1.24
    • 1000 $0.883
    • 10000 $0.785
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    Chip1Stop RCJ120N25TL Cut Tape 3
    • 1 $0.674
    • 10 $0.674
    • 100 $0.674
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    Littelfuse Inc IXFX120N25P

    MOSFET N-CH 250V 120A PLUS247-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFX120N25P Tube 329 1
    • 1 $11
    • 10 $11
    • 100 $9.75233
    • 1000 $9.75233
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    Newark IXFX120N25P Bulk 300
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    • 1000 $10.22
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    120N25 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    120N25

    Abstract: ID104
    Text: Advance Technical Information HiPerFETTM Power MOSFETs IXFX 120N25 IXFK 120N25 VDSS ID25 RDS on Single MOSFET Die = 250 V = 120 A Ω = 22 mΩ trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


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    PDF 120N25 ID104 247TM 728B1 120N25 ID104

    120N25

    Abstract: SiEMENS EC 350 98 0
    Text: IXTK 120N25 High Current MegaMOSTMFET VDSS ID25 = 250 V = 120 A Ω = 20 mΩ RDS on N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 250 V VGS


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    PDF 120N25 120N25 SiEMENS EC 350 98 0

    4525G

    Abstract: ISOPLUS247
    Text: PolarHTTM HiPerFET IXFR 120N25P Power MOSFET VDSS = 250 V ID25 = 61 A Ω RDS on = 27 mΩ Electrically Isolated Tab N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 250 V VDGR TJ = 25°C to 175°C; RGS = 1 MΩ


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    PDF 120N25P 4525G ISOPLUS247

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information PolarHTTM Power MOSFET VDSS ID25 IXTK 120N25P IXTX 120N25P RDS on = 250 V = 120 A Ω = 24 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


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    PDF 120N25P 120N25P O-264 PLUS247 065B1 728B1 123B1

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information PolarHTTM Power MOSFET IXTK 120N25P VDSS ID25 RDS on = 250 V = 120 A Ω = 24 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ VGSM ID25


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    PDF 120N25P O-264 065B1 728B1 123B1 728B1

    PLUS247

    Abstract: IXFX120N25P
    Text: PolarHTTM HiPerFET Power MOSFET IXFK 120N25P IXFX 120N25P VDSS = ID25 = RDS on = trr < 250 V 120 A Ω 24 mΩ 200 ns N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 250 V VDGR TJ = 25°C to 175°C; RGS = 1 MΩ 250


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    PDF 120N25P O-264 PLUS247 PLUS247 IXFX120N25P

    120N25

    Abstract: No abstract text available
    Text: Advance Technical Information IXTK 120N25 High Current MegaMOSTMFET VDSS ID25 = 250 V = 120 A Ω = 22 mΩ RDS on N-Channel Enhancement Mode Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ


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    PDF 120N25 728B1 120N25

    120N25

    Abstract: No abstract text available
    Text: IXTK 120N25 High Current MegaMOSTMFET VDSS ID25 = 250 V = 120 A Ω = 20 mΩ RDS on N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 250 V VGS


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    PDF 120N25 728B1 120N25

    Untitled

    Abstract: No abstract text available
    Text: IXTK 120N25 High Current MegaMOSTMFET VDSS ID25 = 250 V = 120 A Ω = 20 mΩ RDS on N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 250 V VGS


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    PDF 120N25

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information IXTK 120N25 High Current MegaMOSTMFET VDSS ID25 = 250 V = 120 A Ω = 22 mΩ RDS on N-Channel Enhancement Mode Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ


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    PDF 120N25 O-264 728B1

    Untitled

    Abstract: No abstract text available
    Text: IXTK 120N25 High Current MegaMOSTMFET VDSS ID25 = 250 V = 120 A Ω = 20 mΩ RDS on N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 250 V VGS


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    PDF 120N25 728B1

    5080S

    Abstract: No abstract text available
    Text: Advance Technical Information PolarHTTM HiPerFET Power MOSFET IXFK 120N25P IXFX 120N25P VDSS = ID25 = RDS on = trr < 250 V 120 A Ω 24 mΩ 200 ns N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


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    PDF 120N25P 120N25P O-264 PLUS247 5080S

    Untitled

    Abstract: No abstract text available
    Text: PolarHTTM Power MOSFET IXTK 120N25P VDSS = 250 V ID25 = 120 A RDS on ≤ 24 m Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 250 250 V V VGS VGSM


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    PDF 120N25P 26ulombs

    120N25P

    Abstract: PLUS247
    Text: PolarHTTM HiPerFET Power MOSFET VDSS = 250 V ID25 = 120 A Ω RDS on ≤ 24 mΩ ≤ 200 ns trr IXFK 120N25P IXFX 120N25P N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 250 V


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    PDF 120N25P 70oCoulombs 120N25P PLUS247

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


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    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


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    PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    STW20N60

    Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
    Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal


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    PDF O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p

    DIODE 1334

    Abstract: 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP 200N10P-88
    Text: Chip-Shortform2004.pmd PolarHTTM MOSFET, very low RDS on Type VDSS max. RDSon max. Chip type Chip size dimensions 11 Source bond wire recommended Equivalent device data sheet 26.10.2004, 12:44 V mΩ mm mils IXTD 110N055P-5S 55 21 5S 6.20 x 5.20 244 x 205


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    PDF 110N055P-5S 75N10P-5S 110N10P-6S 140N10P-7S 170N10P-8S 200N10P-88 62N15P-5S 96N15P-6S 120N15P-7S 150N15P-8S DIODE 1334 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP