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    120N20P Search Results

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    120N20P Price and Stock

    Littelfuse Inc IXTQ120N20P

    MOSFET N-CH 200V 120A TO3P
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    DigiKey IXTQ120N20P Tube 265 1
    • 1 $11.8
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    • 100 $7.53367
    • 1000 $11.8
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    Littelfuse Inc IXFH120N20P

    MOSFET N-CH 200V 120A TO247AD
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    DigiKey IXFH120N20P Tube 2 1
    • 1 $12.23
    • 10 $12.23
    • 100 $7.83167
    • 1000 $12.23
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    RS IXFH120N20P Bulk 8 Weeks 30
    • 1 -
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    • 100 $11.02
    • 1000 $11.02
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    Littelfuse Inc IXFK120N20P

    MOSFET N-CH 200V 120A TO264AA
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    DigiKey IXFK120N20P Tube 300
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    Newark IXFK120N20P Bulk 300
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    RS IXFK120N20P Bulk 8 Weeks 25
    • 1 -
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    • 100 $11.83
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    Littelfuse Inc IXTK120N20P

    MOSFET N-CH 200V 120A TO264
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTK120N20P Tube 300
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    Newark IXTK120N20P Bulk 300
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    IXYS Corporation IXFK120N20P

    MOSFETs 120 Amps 200V 0.022 Rds
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    Mouser Electronics IXFK120N20P 4,479
    • 1 $12.98
    • 10 $12
    • 100 $9.88
    • 1000 $7.81
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    TTI IXFK120N20P Tube 300
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    TME IXFK120N20P 1
    • 1 $13.37
    • 10 $10.64
    • 100 $9.56
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    New Advantage Corporation IXFK120N20P 380 1
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    • 100 $19.45
    • 1000 $18.16
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    120N20P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    e15343

    Abstract: No abstract text available
    Text: Advanced Technical Information PolarHTTM Power MOSFET IXTR 120N20P VDSS = 200 V ID25 = 85 A Ω RDS on ≤ 25 mΩ Electrically Isolated Tab, N-Channel Enhancement Mode, Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 200


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    PDF 120N20P e15343

    Untitled

    Abstract: No abstract text available
    Text: PolarHTTM Power MOSFET IXTK 120N20P IXTQ 120N20P VDSS = 200 V ID25 = 120 A RDS on ≤ 22 m Ω N-Channel Enhancement Mode Avalanche Rated TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ


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    PDF 120N20P O-264

    NS152

    Abstract: No abstract text available
    Text: Advanced Technical Information PolarHTTM Power MOSFET IXFN 120N20P VDSS = 200 V ID25 = 120 A Ω RDS on ≤ 22 mΩ ≤ 220 ns trr N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 200 V VDGR TJ = 25°C to 175°C; RGS = 1 MΩ


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    PDF 120N20P NS152

    120N20P

    Abstract: No abstract text available
    Text: PolarHTTM HiPerFET IXFH 120N20P IXFK 120N20P Power MOSFET VDSS = 200 V ID25 = 120 A RDS on ≤ 22 m Ω ≤ 200 ns trr N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ


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    PDF 120N20P O-247 120N20P

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information PolarHTTM Power MOSFET IXTQ 120N20P IXTK 120N20P VDSS = 200 V ID25 = 120 A Ω RDS on ≤ 22 mΩ N-Channel Enhancement Mode TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


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    PDF 120N20P

    IXFH120N20P

    Abstract: No abstract text available
    Text: Advanced Technical Information PolarHTTM HiPerFET IXFH 120N20P IXFK 120N20P Power MOSFET VDSS = 200 V ID25 = 120 A Ω RDS on ≤ 22 mΩ ≤ 140 ns trr N-Channel Enhancement Mode Avalanche Rated, Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings


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    PDF 120N20P IXFH120N20P

    120N20P

    Abstract: IXTQ120N20P 120N20
    Text: PolarHTTM Power MOSFET IXTK 120N20P IXTQ 120N20P VDSS = 200 V ID25 = 120 A RDS on ≤ 22 m Ω N-Channel Enhancement Mode Avalanche Rated TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ


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    PDF 120N20P O-264 120N20P IXTQ120N20P 120N20

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


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    PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


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    PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    STW20N60

    Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
    Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal


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    PDF O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p

    DIODE 1334

    Abstract: 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP 200N10P-88
    Text: Chip-Shortform2004.pmd PolarHTTM MOSFET, very low RDS on Type VDSS max. RDSon max. Chip type Chip size dimensions 11 Source bond wire recommended Equivalent device data sheet 26.10.2004, 12:44 V mΩ mm mils IXTD 110N055P-5S 55 21 5S 6.20 x 5.20 244 x 205


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    PDF 110N055P-5S 75N10P-5S 110N10P-6S 140N10P-7S 170N10P-8S 200N10P-88 62N15P-5S 96N15P-6S 120N15P-7S 150N15P-8S DIODE 1334 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP