120P3N
Abstract: IEC61249-2-21 JESD22 JESD22-A114 BSZ120P03NS3 G d20 diode
Text: BSZ120P03NS3 G OptiMOSTM P3 Power-Transistor Product Summary Features V DS -30 V • single P-Channel in S3O8 R DS on ,max 12 mΩ • Qualified according JEDEC 1) for target applications ID -40 A PG-TSDSON-8 • 150 °C operating temperature • V GS=25 V, specially suited for notebook applications
|
Original
|
BSZ120P03NS3
IEC61249-2-21
120P3N
120P3N
IEC61249-2-21
JESD22
JESD22-A114
BSZ120P03NS3 G
d20 diode
|
PDF
|
transistor C 2240
Abstract: IEC61249-2-21 JESD22 JESD22-A114
Text: BSZ120P03NS3E G OptiMOSTM P3 Power-Transistor Product Summary Features V DS -30 V • single P-Channel in S3O8 R DS on ,max 12 mΩ • Qualified according JEDEC 1) for target applications ID -40 A PG-TSDSON-8 • 150 °C operating temperature • V GS=25 V, specially suited for notebook applications
|
Original
|
BSZ120P03NS3E
IEC61249-2-21
120P3NE
transistor C 2240
IEC61249-2-21
JESD22
JESD22-A114
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BSZ120P03NS3E G OptiMOSTM P3 Power-Transistor Product Summary Features V DS -30 V • single P-Channel in S3O8 R DS on ,max 12 mΩ • Qualified according JEDEC 1) for target applications ID -40 A PG-TSDSON-8 • 150 °C operating temperature • V GS=25 V, specially suited for notebook applications
|
Original
|
BSZ120P03NS3E
IEC61249-2-21
120P3NE
70angerous
|
PDF
|
PG-TSDSON-8
Abstract: 120P3N
Text: BSZ120P03NS3E G OptiMOSTM P3 Power-Transistor Product Summary Features V DS -30 V • single P-Channel in S3O8 R DS on ,max 12 mΩ • Qualified according JEDEC 1) for target applications ID -40 A PG-TSDSON-8 • 150 °C operating temperature • V GS=25 V, specially suited for notebook applications
|
Original
|
BSZ120P03NS3E
IEC61249-2-21
120P3NE
726-BSZ120P03NS3EG
PG-TSDSON-8
120P3N
|
PDF
|