Untitled
Abstract: No abstract text available
Text: TTM8000 Time Tagging Module with 8-Channels Release 4.4.2 – April 16th, 2015 1/60 TTM8000 Table of Contents Introduction:. 3
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TTM8000
TTM8000?
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TOSLINK TOTX1120 Unit mm Fiber Optic Transmitting Module for 12.3 ST Connector with 62.5/125tim Silica Fiber •H.29 8.2 CO pupf Features • Data rate: up to 155Mb/s (NRZ code) • Transmission distance: up to 2000m (using TORX1120) (Point to point transmission)
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OTX1120
5/125tim
155Mb/s
2000m
ORX1120)
1320nm
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76L05
Abstract: No abstract text available
Text: KA7 6L05Z ELECTRONICS Industrial 3-TERM INAL LOW DROPOUT VOLTAGE REGULATOR KA76L05 is an adjustable 3-terminal low dropout voltage regulator designed to need very low quiescent current. internally, implemented circuits include 60V load dump protection, - 50V reverse transient short circuit and thermal over load protection.
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6L05Z
KA76L05
100mA.
KA76L05Z
125tI
100ms
O-92L
76L05
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AMN3011
Abstract: MN3204 MN3012 190-STAGE
Text: DIGITAL MONOLITHIC INTEGRATED CIRCUITS MOS MOS I V I v / « J 1C, LSI E le c t r ic a l Type M a x im u m rF u n c t*i o n No. (T a = 2 5 °C ) S ym bol Ite m Vte= - 1 8 ~ + 0 . 3 V V o= —1 8 -+ 0 .3 V Topr=-20~+70t: Tstg=—55— h l2 5 t; BBD fo r S ig n a l
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10kHz
3328-stage
40kHz,
AMN3011
10kHz~
-200kHz
40kHz
512-Stage
AMN3011
MN3204
MN3012
190-STAGE
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Untitled
Abstract: No abstract text available
Text: M 5 M 4 V 4 8 J , T P , R T - 6 , - 7 , - 8 , - 6 S , - 7 $ , - 8 S FAST PAGE MODE 4194304-BIT 524288-WORD BY 8-BIT DYNAMIC RAM — DESCRIPTION This is a family of 524288-word by 8 bit dynamic RAMs, fabri:eted with the high performance CMOS process, and is
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4194304-BIT
524288-WORD
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2147D
Abstract: No abstract text available
Text: CY2147 CYPRESS SEMICONDUCTOR 4096 x 1 Static R/W RAM F eatures F unctional D escription • A u to m a tic po w er-d o w n w h en d e s e le c te d The1 C Y 2 147 is a h ig h -p e rfo rm a n c e C M O S s ia lic R A M o rg a n iz e d as 4096 b y 1 bit. E asy
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CY2147
2147D
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hy51v16404ct
Abstract: No abstract text available
Text: -H Y U W P H I * HY51 V17404C,HY51V16404C 4Ux4, Extended Data Out mode DESCRIPTION This fam ily is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind o f page mode which is useful for the read operation. The circuit and process
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V17404C
HY51V16404C
hy51v16404ct
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transistor 2N4
Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
Text: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION
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TIC COL 02
Abstract: No abstract text available
Text: M T 4 C 1670/1 L 6 4 K X 16 D R A M I ^ K Z R O N 64K x 16 DRAM STATIC COLUMN MODE, LOW POWER, EXTENDED REFRESH FEATURES PIN ASSIGNMENT Top View • Industry standard xl6 pinouts, tim ing, functions and packages • High-performance, C M O S silicon-gate process
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MT4C1670
MT4C1671
225mW
MT4C1670/1
TIC COL 02
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Untitled
Abstract: No abstract text available
Text: S P E C I F I C A T I O N T E N T A T DEVICE NAME : TYPE NAME : IVE P o w e r M O S F E T 2 5 K 2 7 5 7 - 0 1 SPEC. No. Fuji E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. DATE NAME APPROVED Fiiii Ffcrtrir DRAWN . CHECKED
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025T-R-004a
O-220
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Untitled
Abstract: No abstract text available
Text: 'HYUNDAI HYM5V64214A Z-Series SO DIMM 2M x 64-bit CMOS DRAM MODULE _ with EXTENDED DATA OUT DESCRIPTION The HYM5V64214A is a 2M x 64-bit EDO mode CMOS DRAM module consisting of eight HY51V17804B in 28/28 pin SOJ or TSOP-II and one 2048 bit EEPROM on a 144 Zig Zag Dual pin glass-epoxy printed circuit board. 0.22|iF
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HYM5V64214A
64-bit
HY51V17804B
HYM5V64214AZG/ATZGfASLZG/ASLTZG
A0-A10)
DQ0-DQ63)
1EC07-10-FEB96
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Untitled
Abstract: No abstract text available
Text: C "HYUNDAI • HY51V17404B.HY51 V16404B 4Mx4, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process
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HY51V17404B
V16404B
A0-A11)
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Untitled
Abstract: No abstract text available
Text: Preliminary KMM332V104BT-L KMM332V124BT-L DRAM MODULE KMM332V104BT-L & KMM332V124BT-L Fast Page Mode 1Mx32 DRAM DIMM, Low Power, 4K & 1K Refresh, 3.3V G ENER AL FEATURES D ESCRIPTIO N The Samsung KMM332V10 2 4BT is a 1M bit x 32 D ynam ic RAM high density m em ory module. The
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KMM332V104BT-L
KMM332V124BT-L
KMM332V104BT-L
KMM332V124BT-L
1Mx32
KMM332V104BT-L6/L7
cycles/128ms
60/70ns)
332V124BT-L6/L7
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Untitled
Abstract: No abstract text available
Text: TANTALUM ELECTROLYTIC CAPACITORS @3 Resin-molded Chip, Compact Series Fqt SMD xiic h ico n Type num bering system Exam ple: 20V 0.47pF Smaller F 9 2 1 D 4 7 4 M A — i— Series Capacitance Rated voltage I Case code Taping code (Refer to page 198 tor details)
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ISTS80
Abstract: No abstract text available
Text: I50C0M COMPOMENTS DUAL CHANNEL SLOTTED INTERRUPTER SWITCH TRANSISTOR SENSOR HÄ BVEro Min V b v eco Min V 1CEO Max nA ISTS822SD Max ISTS822S •f ISTS832SD vF ISTS832S Max 1.6 1.7 1.7 1.6 1.7 1.7 100 100 100 100 100 100 30 30 30 30 30 30 5.0 5.0 5.0 5.0
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I50C0M
ISTS832SD
ISTS832S
ISTS150
125tiA
s20mA
20biA
100tiA
Fa20mA
Fa20rflÄ
ISTS80
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Untitled
Abstract: No abstract text available
Text: < < 3 < 3 Y IIIID A I - ^ • HYM564214A H-Series 4Mx64-blt CMOS ORAM MODULE with EXTENDED DATA OUT J GENERAL DESCRIPTION The HYM 564214A H-Series is a 2M x64-bit Extended Data O ut mode CM OS DRAM m odule consisting of eight HY5117804B in 28 pin SOJ or TSOPII and tw o 16-bit BiCMOS line driver in TSSO P on a 168 pin
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HYM564214A
4Mx64-blt
64214A
x64-bit
HY5117804B
16-bit
HYM564214AHG
168-Pin
2Mx64
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Untitled
Abstract: No abstract text available
Text: SSE D MI CR ON T E C H N O L O G Y INC M IC R O N • b l l l S H T 0 0 D 4 71 7 TTT 1 MEG DRAM MODULE X iu r n MT3D19 9 DRAM MODULE 1 MEG x 9 DRAM FAST PAGE MODE MT3D19 LOW POWER, EXTENDED REFRESH (MT3D19 L) FEATURES • Industry standard pinout in a 30-pin single-in-line
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MT3D19
MT3D19)
MT3D19
30-pin
625mW
024-cycle
128ms
CYCLE27
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2AN6551
Abstract: No abstract text available
Text: DIGITAL MONOLITHIC INTEGRATED CIRCUITS MOS MOS 1C, LSI E le c tr ic a l C h a r a c te r is t ic s T y p e No. F u n c tio n (T a = 2 5 °C ) VTE= —18— h0.3V Ite m Sym bol Signal Delay Time Vo= —18 — 1-0.3V Input Signal 1’requencv T opr=-20~+60t
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MN3007
N3007
N3008
N3009
1/2AN6551
MN3010
AN6551
AN65SÂ
2AN6551
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b?E D • 7^1,4142 DDlS57b 114 I KM41C4000BL SMGK CMOS DRAM 4M X 1 Bit CMOS Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • Perform ance range: I rac *CAC <RC KM41C4000BL-6 60ns 15ns 110ns KM41C4000BL-7 70ns 20ns 130ns
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DDlS57b
KM41C4000BL
KM41C4000BL-6
110ns
KM41C4000BL-7
130ns
KM41C4000BL-8
150ns
cycles/128ms
495/440/385mW
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T16D
Abstract: MT30A
Text: PRELIMINARY |V |IC Z F O N MT8D88C1 32VH/432VH S , M T16D 88C 232V H /832V H (S) 4MB. 8MB. 16MB, 32M B DRAM CA RD S DRAM MINICARD 4,8,16*, 32* megabytes 1 MEG, 2 MEG, 4 MEG, 8 MEG x 32; 3.3V, FAST PAGE MODE, OPTIONAL SELF REFRESH FEATURES • • • • •
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MT8D88C1
32VH/432VH
/832V
88-pin
MT8D88C132VH/432VH
MT16D88C232VH/832VH
T16D
MT30A
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