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    126N10N Search Results

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    126N10N Price and Stock

    Infineon Technologies AG IPA126N10NM3SXKSA1

    MOSFET N-CH 100V 39A TO220
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    DigiKey IPA126N10NM3SXKSA1 Tube 231 1
    • 1 $2.63
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    Avnet Americas IPA126N10NM3SXKSA1 Tube 16 Weeks 500
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    Mouser Electronics IPA126N10NM3SXKSA1
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    Newark IPA126N10NM3SXKSA1 Bulk 142 1
    • 1 $1.48
    • 10 $1.25
    • 100 $1.03
    • 1000 $0.95
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    Rochester Electronics IPA126N10NM3SXKSA1 500 1
    • 1 $0.8519
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    TME IPA126N10NM3SXKSA1 1
    • 1 $1.19
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    • 100 $0.8
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    EBV Elektronik IPA126N10NM3SXKSA1 17 Weeks 500
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    Infineon Technologies AG IPI126N10N3-G

    MOSFET N-CH 100V 58A TO262-3
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    DigiKey IPI126N10N3-G Tube
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    Rochester Electronics LLC IPA126N10N3GXKSA1

    TRENCH >=100V
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    DigiKey IPA126N10N3GXKSA1 Bulk 368
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    Infineon Technologies AG IPA126N10N3GXKSA1

    MOSFET N-CH 100V 35A TO220-FP
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    DigiKey IPA126N10N3GXKSA1 Tube
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    Rochester Electronics IPA126N10N3GXKSA1 1,800 1
    • 1 $0.7846
    • 10 $0.7846
    • 100 $0.7375
    • 1000 $0.6669
    • 10000 $0.6669
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    Rochester Electronics LLC IPI126N10N3GXKSA1

    N-CHANNEL POWER MOSFET
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    DigiKey IPI126N10N3GXKSA1 Bulk 456
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    Find more 126N10N price and stock on Findchips.com

    126N10N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    126N10N

    Abstract: No abstract text available
    Text: 126N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 100 V RDS(on),max 12.6 mW ID 35 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant


    Original     		PDF IPA126N10N3 IEC61249-2-21 PG-TO220-FP 126N10N 126N10N

    126N10N

    Abstract: PG-TO220FP 126N1 JESD22
    Text: 126N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 12.6 mΩ ID 35 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		PDF IPA126N10N3 PG-TO220-FP 126N10N 126N10N PG-TO220FP 126N1 JESD22

    126N10N

    Abstract: 123N10N IEC61249-2-21 IPI126N10N3 PG-TO220-3
    Text: 126N10N3 G IPB123N10N3 G OptiMOSTM3 Power-Transistor 126N10N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max TO-263 12.3 mΩ ID 58 A • Very low on-resistance R DS(on)


    Original     		PDF IPP126N10N3 IPB123N10N3 IPI126N10N3 O-263 IEC61249-2-21 PG-TO220-3 PG-TO263-3 126N10N 123N10N IEC61249-2-21 PG-TO220-3

    126N10N

    Abstract: 123N10N D46 diode 126n10 IPI126N10N3 IPP126N10N3 G JESD22 PG-TO220-3
    Text: 126N10N3 G IPB123N10N3 G OptiMOSTM3 Power-Transistor 126N10N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max TO-263 12.3 mΩ 58 ID A • Very low on-resistance R DS(on)


    Original     		PDF IPP126N10N3 IPB123N10N3 IPI126N10N3 O-263 PG-TO220-3 PG-TO263-3 PG-TO262-3 126N10N 123N10N D46 diode 126n10 IPP126N10N3 G JESD22 PG-TO220-3