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    128KX8 Search Results

    128KX8 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MR28F010-90 Rochester Electronics LLC Flash, 128KX8, 90ns, CQCC32, LCC-32 Visit Rochester Electronics LLC Buy
    MD28F010-90 Rochester Electronics LLC Flash, 128KX8, 90ns, CDIP32, HERMETIC SEALED, CERDIP-32 Visit Rochester Electronics LLC Buy
    8M824S60CB Renesas Electronics Corporation 128KX8 STATIC RAM MODULE Visit Renesas Electronics Corporation
    8M824S70C Renesas Electronics Corporation 128KX8 STATIC RAM MODULE Visit Renesas Electronics Corporation
    8M824S40CB Renesas Electronics Corporation 128KX8 STATIC RAM MODULE Visit Renesas Electronics Corporation
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    128KX8 Price and Stock

    Mitsubishi Electric 128KX8-10SOJ

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    Bristol Electronics 128KX8-10SOJ 663
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    Mitsubishi Electric 128KX810

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    Bristol Electronics 128KX810 663
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    Mitsubishi Electric 128KX8SOJ-100

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    Bristol Electronics 128KX8SOJ-100 663
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    Toshiba America Electronic Components 128KX8SOJ-10

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    Bristol Electronics 128KX8SOJ-10 470
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    Toshiba America Electronic Components 128KX8100

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    Bristol Electronics 128KX8100 326
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    128KX8 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FM28V100-TG

    Abstract: FM28V100-TGTR tca 335 A
    Text: FM28V100 1Mbit Bytewide F-RAM Memory Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8  High Endurance 100 Trillion 1014 Read/Writes  NoDelay Writes  Page Mode Operation to 33MHz  Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM28V100 128Kx8 33MHz 128Kx8 32-pin FM28V100 FM28V100, FM28V100-TG A9482296TG FM28V100-TGTR tca 335 A

    bq4013MA-120

    Abstract: bq4013Y bq4013YMA-120 bq4013
    Text: bq4013/Y 128Kx8 Nonvolatile SRAM Features General Description ➤ Data retention for at least 10 years without power The CMOS bq4013/Y is a nonvolatile 1,048,576-bit static RAM organized as 131,072 words by 8 bits. The integral control circuitry and lithium energy


    Original     		PDF bq4013/Y 128Kx8 576-bit 32-pin bq4013MA-120 bq4013Y bq4013YMA-120 bq4013

    FM18L08

    Abstract: FM20L08 FM20L08-60-TG
    Text: Preliminary FM20L08 1Mbit Bytewide FRAM Memory – Extended Temp. Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8 • Unlimited Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM20L08 128Kx8 33MHz 128Kx8 FM18L08 FM20L08 FM20L08-60-TG

    AM29F010

    Abstract: No abstract text available
    Text: EDI7C32128C 128Kx32 Flash 128Kx32 High Speed Flash Module Features The EDI7C32128C is a high speed, high performance, four megabit density Flash module, organized as 512Kx32 bits, containing four 128Kx8 die mounted in a package. Four Chip Enables are provided to independently enable


    Original     		PDF EDI7C32128C 128Kx32 EDI7C32128C 512Kx32 128Kx8 EDI7C32512C70EQ EDI7C32512C70EI AM29F010

    EDI8L24129V

    Abstract: No abstract text available
    Text: EDI8L24129V 128Kx24 SRAM 3.3 Volt FEATURES The EDI8L24129VxxBC is a 3.3V, three megabit SRAM constructed with three 128Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V operating voltage, the EDI8L24129V is ideal for creating a single chip memory solution


    Original     		PDF EDI8L24129V 128Kx24 EDI8L24129VxxBC 128Kx8 EDI8L24129V DSP5630x 21060L 21062L EDI8L24129V,

    Untitled

    Abstract: No abstract text available
    Text: WME128K8-XXX 128Kx8 CMOS MONOLITHIC EEPROM, SMD 5962-96796 FEATURES  Read Access Times of 125, 140, 150, 200, 250, 300ns  Page Write Cycle Time 10ms Max.  JEDEC Approved Packages  Data Polling for End of Write Detection  Hardware and Software Data Protection


    Original     		PDF WME128K8-XXX 128Kx8 300ns MIL-STD-883

    Untitled

    Abstract: No abstract text available
    Text: MEMORY MODULE MRAM 128Kx8-SOP 3DMR1M08VS1426 Magnetoresistive Ram MODULE 1 Mbit MRAM organized as 128Kx8 Pin Assignment Top View SOP 44 (Pitch : 0.80 mm) Features - Organized as 128Kx8. - Single +3.3V +/-0.3V power supply operation. - Symetrical high-speed read and write fast access


    Original     		PDF 128Kx8-SOP 3DMR1M08VS1426 128Kx8 128Kx8. MMXX00000000XXX 3DFP-0426-REV

    Untitled

    Abstract: No abstract text available
    Text: EDI88128CS 128Kx8 Monolithic SRAM, SMD 5962-89598 FEATURES  Access Times of 15*, 17, 20, 25, 35, 45, 55ns The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby


    Original     		PDF EDI88128CS 128Kx8 EDI88128LPS) MIL-PRF-38535.

    5962-96691

    Abstract: WMS128K8-XXX
    Text: WMS128K8-XXX HI-RELIABILITY PRODUCT 128Kx8 MONOLITHIC SRAM, SMD 5962-96691 pending FEATURES • Access Times 70, 85, 100, 120ns ■ Commercial, Industrial and Military Temperature Range ■ Revolutionary, Center Power/Ground Pinout JEDEC Approved • 32 lead Ceramic SOJ (Package 101)


    Original     		PDF WMS128K8-XXX 128Kx8 120ns MIL-STD-883 04HUX 01HTX 100ns 02HTX 03HTX 5962-96691 WMS128K8-XXX

    ACU51

    Abstract: EEPROM128KX8 128KX8
    Text: New Product Release Advanced Control Unit ACU ACU51 Block EEPROM 128Kx8 Four 8-Bit Parallel Ports Power Control Two Synch. Serial Ports Four Asynch. Serial Ports Digital Interface and Control Specifications Features • Size and Weight: 1.0” x 1.4” x 0.12”, 3 grams


    Original     		PDF ACU51 128Kx8 8051-based, 12-bit 10-bit 16-bit RS-232, ACU51 EEPROM128KX8 128KX8

    EM128L08

    Abstract: EM128L08N EM128L08T
    Text: NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com EM128L08 Advance Information EM128L08 Family 128Kx8 Bit Ultra-Low Power Asynchronous Static RAM Overview Features The EM128L08 is an integrated memory device


    Original     		PDF EM128L08 EM128L08 128Kx8 23033-B EM128L08N EM128L08T

    alarm clock IC

    Abstract: bq4842y
    Text: bq4842Y RTC Module with 128Kx8 NVSRAM Features General Description >• I n te g r a t e d SRAM, re a l-tim e clock, CPU supervisor, crystal, pow er-fail control circuit, and battery The bq4842Y RTC Module is a non­ volatile 1,048,576-bit SRAM organ­ ized as 131,072 words by 8 bits with


    OCR Scan     		PDF bq4842Y 128Kx8 10-year 576-bit-up alarm clock IC

    TAA 310A

    Abstract: KM681000BLP-7L 128k x8 SRAM TSOP km681000blp-7 KM681000B KM681000BL KM681000BLE KM681000BL-L
    Text: KM681000B Family CMOS SRAM 128Kx8 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology: 0.6 um CMOS • Organization : 128K x 8 • Power Supply Voltage : Single 5V +/-10% • Low Data Retention Voltage : 2V Min • Three state output and TTL Compatible


    OCR Scan     		PDF KM681000B 128Kx8 0023b3? KM681OOOÃ 0D23b3Ã TAA 310A KM681000BLP-7L 128k x8 SRAM TSOP km681000blp-7 KM681000BL KM681000BLE KM681000BL-L

    KM68U1000B

    Abstract: KM68V1000B
    Text: CMOS SRAM KM68V1000B, KM68U1000B Family 128Kx8 bit Low Power & Low Vcc CMOS Static RAM GENERAL DESCRIPTION FEATURE SUMMARY • Process Technology: 0.6 um CMOS • Organization : 128Kx8 • Power Supply Voltage KM68V1000B fa m ily : 3.3V +/- 0.3V KM68U1000B family : 3.0V +/- 0.3V


    OCR Scan     		PDF KM68V1000B, KM68U1000B 128Kx8 128Kx8 KM68V1000B 32-SOP, 32-TSOP

    Untitled

    Abstract: No abstract text available
    Text: High Performance 128Kx8 C M O S SRAM p i AS7C1024 AS7C1024L 128Kx8 CM O S S RAM Common I/O FEATURES • Organization: 131,072 words x 8 bits • Equal access and cycle times • High speed • Easy memory expansion with CE1, CE2, OE inputs - 10/12/15/20/25/35 ns address access time


    OCR Scan     		PDF 128Kx8 AS7C1024 AS7C1024L 128Kx8 32-pin 7C256 7C512

    Untitled

    Abstract: No abstract text available
    Text: bq4013/bq4013Y BENCHMARQ 128Kx8 Nonvolatile SRAM Features General Description > Data retention in the absence of power The CMOS bq4013 is a nonvolatile 1,048,576-bit static RAM organized as 131,072 words by 8 bits. The in teg ral control circuitry and lithium energy source provide reli­


    OCR Scan     		PDF bq4013/bq4013Y 128Kx8 bq4013 576-bit 32-pin 10-year

    Untitled

    Abstract: No abstract text available
    Text: W D EDI5M32128C I ELECTRONIC DESIGNS IN C. High Performance Four Megabit EEPROM Module 128Kx32 CMOS ] l fl[ EEPROM Module Features The EDI5M32128C is a high speed, high perform­ ance, four megabit density EEPROM module organized as 128Kx32 bits. The module has four 128Kx8


    OCR Scan     		PDF EDI5M32128C 128Kx32 EDI5M32128C 128Kx8 1b-10 020x45Â

    EDI88130CS20MI

    Abstract: No abstract text available
    Text: ^EDI _ EDI88130CS Beclronic Designs Inc. High Performance Megabit Monolithic SRAM 128Kx8 Monolithic CMOS Static RAM, High Speed Features The EDI88130CS is a high speed, high performance, monolithic Static RAM organized as 128Kx8 bits. An additional chip enable line provides system memory


    OCR Scan     		PDF EDI88130CS 128Kx8 EDI88130CS EDI88130LPS, EDI88130CS17MC EDI88130CS20MC EDI88130LPS17MC EDI88130CS20MI

    Untitled

    Abstract: No abstract text available
    Text: EDI88128C ELECTRONIC DESIGNS INC. High Performance Megabit Monolithic SRAM 128Kx8 Monolithic CMOS Static RAM, High Speed Features The EDI88128C is a high speed, high performance, monolithic Static RAM organized as 128Kx8 bits. The device is also available as EDI88130C with an


    OCR Scan     		PDF EDI88128C 128Kx8 EDI88128C EDI88130C EDl88128LPandEDI88130LP, 88128C

    Untitled

    Abstract: No abstract text available
    Text: _ EDI7F82048C ^E D I Electronic Designs Inc. High Performance Sixteen Megabit Flash EEPROM 2Megx8 CMOS Flash EEPROM Module Features The EDI7F82048C is a 5V-0nly In-System Programmable and Erasable Read Only Memory Module. Organized as 1Megx8 bits, the module contains sixteen 128Kx8 Flash


    OCR Scan     		PDF EDI7F82048C EDI7F82048C 128Kx8 A17-A20 Q01fl34 EDI7F82048C120BSC EDI7F82048C150BSC EDI7F82048C200BSC

    Untitled

    Abstract: No abstract text available
    Text: _ EDI7F8512C ^ED I Electronic Designs Inc. High Performance Four Megabit Flash EEPROM 512Kx8 CMOS Flash EEPROM Module Features The EDI7F8512C is a 5V-0nly In-System Programmable and Erasable Read Only Memory Module. Organized as 512Kx8 bits, the module contains four 128Kx8 Flash Memo­


    OCR Scan     		PDF EDI7F8512C 512Kx8 EDI7F8512C 128Kx8 3E30114 EDI7F8512C120BSC EDI7F8512C150BSC

    Untitled

    Abstract: No abstract text available
    Text: bq4842Y BENCHMARQ RTC Module With 128Kx8 NVSRAM Features General Description >• I n t e g r a t e d SR A M , r e a l - t i m e clock, C PU su p erv iso r, c ry sta l, p o w er-fail c o n tro l c irc u it, a n d b attery The bq4842Y RTC Module is a non­


    OCR Scan     		PDF bq4842Y 128Kx8 576-bit

    Untitled

    Abstract: No abstract text available
    Text: _ EDI88130CS m o \ Bedronic Detignt Inc. High Performance Megabit Monolithic SRAM 128Kx8 Monolithic CMOS Static RAM, High Speed Features The EDI88130CS is a high speed, high performance, monolithic Static RAM organized as 128Kx8 bits. An additional chip enable line provides system memory


    OCR Scan     		PDF EDI88130CS 128Kx8 EDI88130CS EDI88130LPS, EDI88130CS55NB EDI88130LPS55NB EDI88130CS20TB EDI88130LPS20TB

    Untitled

    Abstract: No abstract text available
    Text: M/HITE /M ICROELECTRONICS WS128K8-XCX 128Kx8 SRAM MODULE FEATURES FIG. 1 • Access Times 25 to 45nS ■ Standard M icro circ u it Draw ing, 5962-93156 PIN CONFIGURATION TOP VIEW NCC A16C A14C A12 C A7 C A6 H A 5Ü A4 C A3 C A2 C A1C ADC i/ooC 1/01 □ 1/02C


    OCR Scan     		PDF WS128K8-XCX 128Kx8 1/02C MIL-STD-883 06HXX 07HXX 08HXX