K7A401800B-QC
Abstract: K7A401809B K7A401809B-QC K7A403200B-QC K7A403209B K7A403209B-QC K7A403609B K7B401825B-QC K7B403225B-QC
Text: K7A403609B K7A403209B K7A401809B 128Kx36/x32 & 256Kx18 Synchronous SRAM Document Title 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM Revision History History Draft Date Remark 0.0 1. Initial draft May. 15. 2001 Preliminary 0.1 1. Changed DC parameters
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K7A403609B
K7A403209B
K7A401809B
128Kx36/x32
256Kx18
128Kx36
128Kx32
256Kx18-Bit
570mA
490mA
K7A401800B-QC
K7A401809B
K7A401809B-QC
K7A403200B-QC
K7A403209B
K7A403209B-QC
K7A403609B
K7B401825B-QC
K7B403225B-QC
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K7A401800B
Abstract: K7A401800B-QC K7A401809B-QC K7A403200B K7A403200B-QC K7A403209B-QC K7A403600B K7B401825B-QC K7B403225B-QC
Text: K7A403600B K7A403200B K7A401800B 128Kx36/x32 & 256Kx18 Synchronous SRAM Document Title 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM Revision History History Draft Date Remark 0.0 1. Initial draft May. 15. 2001 Preliminary 0.1 1. Changed DC parameters
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K7A403600B
K7A403200B
K7A401800B
128Kx36/x32
256Kx18
128Kx36
128Kx32
256Kx18-Bit
350mA
290mA
K7A401800B
K7A401800B-QC
K7A401809B-QC
K7A403200B
K7A403200B-QC
K7A403209B-QC
K7A403600B
K7B401825B-QC
K7B403225B-QC
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AM29F010
Abstract: No abstract text available
Text: EDI7C32128C 128Kx32 Flash 128Kx32 High Speed Flash Module Features The EDI7C32128C is a high speed, high performance, four megabit density Flash module, organized as 512Kx32 bits, containing four 128Kx8 die mounted in a package. Four Chip Enables are provided to independently enable
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EDI7C32128C
128Kx32
EDI7C32128C
512Kx32
128Kx8
EDI7C32512C70EQ
EDI7C32512C70EI
AM29F010
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WS128K32XXX
Abstract: No abstract text available
Text: WS128K32-XXX / EDI8C32128C HI-RELIABILITY PRODUCT 128Kx32 SRAM MODULE, SMD 5962-93187 & 5962-95595 FEATURES • ■ ■ ■ ■ ■ Access Times of 15, 17, 20, 25, 35, 45, 55ns ■ MIL-STD-883 Compliant Devices Available ■ Packaging Commercial, Industrial and Military Temperature Ranges
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WS128K32-XXX
EDI8C32128C
128Kx32
MIL-STD-883
WS128K32-XG2TX
EDI8C32128C-E
WS128K32-XH1X
EDI8C32128C-G
WS128K32-XG4TX
10HYX
WS128K32XXX
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Untitled
Abstract: No abstract text available
Text: WSF128K32V-XG2TX 128KX32 SRAM/FLASH 3.3V MODULE ADVANCED* FEATURES FLASH MEMORY FEATURES • Access Times of 25ns SRAM and 120ns (FLASH) ■ 10,000 Erase/Program Cycles ■ Access Times of 25ns (SRAM) and 90ns (FLASH) ■ Sector Architecture • 8 equal size sectors of 16K bytes each
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WSF128K32V-XG2TX
128KX32
120ns
128K32
120ns
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7705ac
Abstract: 128KX32 EDI8F32128C jedec 64-pin simm 7705
Text: EDI8F32128C 128Kx32 SRAM Module 128Kx32 Static RAM CMOS, High Speed Module Features 128Kx32 bit CMOS Static Random Access Memory • Access Times BiCMOS: 10 and12ns CMOS: 15, 20, 25, 35, 55, 70, 85 and 100ns • Individual Byte Selects • Fully Static, No Clocks
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EDI8F32128C
128Kx32
and12ns
100ns
100ns)
EDI8F32128C
01581USA
7705ac
jedec 64-pin simm
7705
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Untitled
Abstract: No abstract text available
Text: GLT44032-E 128K x 32 Embedded EDO DRAM Macro FEATURES ◆ Logical organization: 128Kx32 bits ◆ Physical organization: 512x256x32 ◆ Single 3.3v ± 0.3v power supply ◆ 512-cycle refresh in 8 ms ◆ Refresh modes: RAS only, CBR, and Hidden ◆ Single CAS with 4 DQM for Byte Write control
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GLT44032-E
128Kx32
512x256x32
512-cycle
GLT44032-E
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Untitled
Abstract: No abstract text available
Text: K7N403609B K7N403209B K7N401809B 128Kx36/x32 & 256Kx18 Pipelined NtRAMTM Document Title 128Kx36 & 128Kx32 & 256Kx18-Bit Pipelined NtRAMTM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. May. 15. 2001 Preliminary 0.1 1. Changed DC parameters
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K7N403609B
K7N403209B
K7N401809B
128Kx36/x32
256Kx18
128Kx36
128Kx32
256Kx18-Bit
470mA
400mA
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WF128K32-XXX5
Abstract: 5962-9471604HAX
Text: White Electronic Designs WF128K32-XXX5 128KX32 5V FLASH MODULE, SMD 5962-94716 FEATURES Commercial, Industrial and Military Temperature Ranges Access Times of 50*, 60, 70, 90, 120, 150ns Packaging: • 66 pin, PGA Type, 1.075 inch square, Hermetic Ceramic HIP Package 400
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WF128K32-XXX5
128KX32
150ns
02HNX
03HNX
04HNX
05HNX
01HAX
120ns
WF128K32-XXX5
5962-9471604HAX
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Untitled
Abstract: No abstract text available
Text: K7B403625B K7B403225B K7B401825B 128Kx36/x32 & 256Kx18 Synchronous SRAM Document Title 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Burst SRAM Revision History History Draft Date Remark 0.0 1. Initial draft May. 15. 2001 Preliminary 0.1 1. Changed DC parameters
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K7B403625B
K7B403225B
K7B401825B
128Kx36/x32
256Kx18
128Kx36
128Kx32
256Kx18-Bit
300mA
250mA
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EDI8F32128C
Abstract: Static RAM 128m
Text: White Electronic Designs EDI8F32128C 128KX32 STATIC RAM CMOS, HIGH SPEED MODULE FEATURES DESCRIPTION 128Kx32 bit CMOS Static Random Access Memory Access Times: 15, 20, and 25ns Individual Byte Selects Fully Static, No Clocks TTL Compatible I/O Single +5V ±10% Supply Operation
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EDI8F32128C
128KX32
EDI8F32128C
128Kx8
150mA
780mA
Static RAM 128m
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EDI8F32128C
Abstract: No abstract text available
Text: White Electronic Designs EDI8F32128C 128KX32 STATIC RAM CMOS, HIGH SPEED MODULE FEATURES DESCRIPTION 128Kx32 bit CMOS Static Random Access Memory The EDI8F32128C is a high speed 4Mb Static RAM module organized as 128K words by 32 bits. This module is
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EDI8F32128C
128KX32
EDI8F32128C
128Kx8
150mA
780mA
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EDI8L32128C
Abstract: EDI8L32128C12AC EDI8L32128C15AC EDI8L32128C15AI EDI8L32128C17AC EDI8L32128C20AC EDI8L32128C25AC EDI8L32256C EDI8L3265C MO-47AE
Text: EDI8L32128C White Electronic Designs 128Kx32 CMOS High Speed Static RAM DESCRIPTION n The EDI8L32128C is a high speed, high performance, four megabit density Static RAM organized as a 128Kx32 bit array. n T NO FEATURES 128Kx32 bit CMOS Static Random Access Memory Array
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EDI8L32128C
128Kx32
EDI8L32128C
256Kx16
512Kx8
MO-47AE
EDI8L32128C15AI
EDI8L32128C12AC
EDI8L32128C15AC
EDI8L32128C15AI
EDI8L32128C17AC
EDI8L32128C20AC
EDI8L32128C25AC
EDI8L32256C
EDI8L3265C
MO-47AE
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Untitled
Abstract: No abstract text available
Text: 512Kx32/256Kx16/128Kx32, 150ns, TSOP STACK 30A229-00 A M-Densus High Density Memory Device 4 Megabit High Speed EEPROM DPE128X32Y5 ADVANCED INFORMATION DESCRIPTION: The DPE128X32Y5 is a high-performance Electrically Erasable and Programmable Read Only Memory EEPROM module and may
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512Kx32/256Kx16/128Kx32,
150ns,
30A229-00
DPE128X32Y5
DPE128X32Y5
16-bit
32-bit
128-BWDW
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Untitled
Abstract: No abstract text available
Text: 1ZÖKX3Z SKMMMOdUie ELECTRONIC DESIGNS IN C | 128KX32 Static RAM CMOS, High Speed Module Features 128Kx32 bit CMOS Static The EDI8G32130C is a high speed 4 megabit Static RAM Random Access Memory module organized as 128K words by 32 bits. This module is • Access Times
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128KX32
EDI8G32130C
128Kx8
10and12ns
EDI8G32130B10MMC
EDI8G32130B12MMC
EDI8G32130C15MMC
EDI8G32130C20MMC
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Untitled
Abstract: No abstract text available
Text: W D EDI5M32128C I ELECTRONIC DESIGNS IN C. High Performance Four Megabit EEPROM Module 128Kx32 CMOS ] l fl[ EEPROM Module Features The EDI5M32128C is a high speed, high perform ance, four megabit density EEPROM module organized as 128Kx32 bits. The module has four 128Kx8
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EDI5M32128C
128Kx32
EDI5M32128C
128Kx8
1b-10
020x45Â
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Untitled
Abstract: No abstract text available
Text: T T WS128K32-XXX M/HITE /MICROELECTRONICS • Organized as 128Kx32; User Configurable as 25BKx16 or 512Kx8 ■ Commercial, Industrial and M ilitary Temperature Ranges ■ 5 Volt Power Supply 128Kx32 SRAM MODULE FEATURES ■ Access Time 17 and 20nS ■ MIL-STD-883 Compliant Devices Available
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WS128K32-XXX
128Kx32
MIL-STD-883
128Kx32;
25BKx16
512Kx8
00DQb3ñ
09HXX
10HXX
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Untitled
Abstract: No abstract text available
Text: YZÀ 128Kx32 SRAM MODULE PRELIMINARY* • Commercial and Industrial Temperature Ranges ■ TTL Compatible Inputs and C M O S Outputs ■ 5 Volt Pow er Supply FEATURES ■ Access Times of 17nS to 45nS ■ W PS128K32-XPJX 1/VHITE /MICROELECTRONICS Packaging
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PS128K32-XPJX
128Kx32
68-lead,
128Kx32
WPS128K32-XPJX
DQO-31
AO-16
WPS128K32-XPJX
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717G
Abstract: No abstract text available
Text: WS128K32-XXX WHITE /MICROELECTRONICS a 128Kx32 SRAM M ODULE, SM D 5962-93187 & 5962-95595 FEATURES • A ccess Tim es of 1 5 ,1 7 , 20, 25, 35, 45, 55ns C om m ercial, Industrial and M ilita ry T e m pe ratu re Fianges ■ M IL-S TD -883 C om pliant D evices A v a ila b le
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WS128K32-XXX
128Kx32
66-pin,
128Kx32;
256Kx16
512Kx8
10HYX
717G
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LT 1385
Abstract: No abstract text available
Text: a WHITE /MICROELECTRONICS 128Kx32 SRAM/FLASH MODULE WSF128K32-XH2X PRELIM INARY * FEATURES FLASH MEMORY FEATURES • A cce ss Tim es of 25ns SRAM and 120ns (FLASH) ■ ■ A cce ss Tim es of 25ns (SRAM ) and 90ns (FLASH) ■ Sector A rc h ite c tu re • 8 equal size sectors o f 16K bytes each
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WSF128K32-XH2X
128Kx32
120ns
66-pin,
128K32
120ns
LT 1385
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Untitled
Abstract: No abstract text available
Text: a WPS128K32G-XPJX WHITE /MICROELECTRONICS 128Kx32SRAM MODULE PRELIMINARY* FEATURES • ■ A ccess Tim es of 1 5 ,1 7 , 20, 25, 35ns ■ G2 Pinout fo r Upgrade Path to M ilita r y Grade Device Packaging: ■ 5 V olt Pow er S upply • 68 Lead, P lastic PLCC, 24.71 mm 0.973 inch square
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WPS128K32G-XPJX
128Kx32SRAM
128Kx32
WPS128K32G-X
PS128K32G-XPJX
128K32
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Untitled
Abstract: No abstract text available
Text: EDI8F32123C ^ E D I ELECTRONIC DESIGNS, N C .I 128Kx32 Battery Backed SRAM Module ADVANCED Features 128Kx32 bit CMOS Static Random Access Memory with on-board battery backup 128Kx32 Static RAM CMOS, High Speed Module The EDI8F32123C is a 4 megabit Battery Backed SRAM
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EDI8F32123C
128Kx32
EDI8F32123C
128Kx
128Kx8
EDI8F32123C70MMC
EDI8F32123C85MMC
EDBF32123C
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GS840NBT32
Abstract: No abstract text available
Text: Preliminary - A pril 1998 u m o io c v < t\\ 2.5V or 3.3V I/O 143/133/117/100 GS840NBT32PT NO BUS TURNAROUND _ PIPELINE 128Kx32 NBT F eatures Output registers are provided and are controlled by FT m ode pin. With FT mode pin, output registers can be programmed in either
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GS840NBT32PT
128Kx32
GS840NBT32
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Untitled
Abstract: No abstract text available
Text: a WF128K32-XXX5 WHITE /MICROELECTRONICS 128Kx32 5V FLASH MODULE, SMD 5962-94716 FEATURES • A c c ess T im e s of 50*, 60, 70, 9 0 , 1 2 0 , 1 50ns ■ C o m m ercia l, In d u s tria l and M ilit a r y T e m p e ra tu re Ranges ■ Packaging: ■ 5 V o lt Pro g ram m ing . 5V ± 1 0 % S u p p ly
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WF128K32-XXX5
128Kx32
150ns
120ns
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