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    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: a WPS128K32G-XPJX WHITE /MICROELECTRONICS 128Kx32SRAM MODULE PRELIMINARY* FEATURES • ■ A ccess Tim es of 1 5 ,1 7 , 20, 25, 35ns ■ G2 Pinout fo r Upgrade Path to M ilita r y Grade Device Packaging: ■ 5 V olt Pow er S upply • 68 Lead, P lastic PLCC, 24.71 mm 0.973 inch square


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    WPS128K32G-XPJX 128Kx32SRAM 128Kx32 WPS128K32G-X PS128K32G-XPJX 128K32 PDF

    Untitled

    Abstract: No abstract text available
    Text: ^ E D EDI8F32128C I ELECTRONIC DESIGNS, INC-I 128KX32SRAMMaÓuk 128Kx32Static RAM CMOS, H i# SpeedModule Features 128Kx32 bit CMOS Static The EDI8F32128C is a high speed 4 megabit Static RAM Random Access Memory module organized as 128K words by 32 bits. This module is


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    EDI8F32128C 128KX32SRAMMa 128Kx32 128Kx32Static EDI8F32128C constructedfromfour128Kx8StaticRAMsinSOJ 100ns 8EVN30e PDF

    Untitled

    Abstract: No abstract text available
    Text: ^EDI EDI8G32130C 12SKx32SRAMModule EtfCIRONC DE9 GN& N C | 128Kx32Static RAM CMOS, High SpeedModule Features 128Kx32 bit CMOS Static The EDI8G32130C is a high speed 4 megabit Static RAM module organized as 128K words by 32 bits. This module is constructed from four 128Kx8 Static RAMs in SOJ pack­


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    EDI8G32130C 12SKx32SRAMModule 128Kx32 10and12ns 128Kx32Static EDI8G32130C 128Kx8 EDB632130C ECOI9700 PDF

    Untitled

    Abstract: No abstract text available
    Text: EDI8L32128C ^ E D I 128Kx32 SRAM Module aecFBONC o e s g n i nc.1 128Kx32CMOSHighSpeed StaticRAM F e a tu re s The EDI8L32128C is a high speed, high performance, four megabit density Static RAM organized as a 128Kx32 bit array. Four Chip Enables, Write Control, and Output Enable


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    EDI8L32128C 128Kx32 MO-47AE) 128Kx32CMOSHighSpeed EDI8L32128C EDI8L32128C17AI EDI8L32128C20AI 68Lead PDF

    Untitled

    Abstract: No abstract text available
    Text: PU M A 67S4000-Ì5/S5/70 ISSUE 1.0 : MARCH 1992 Absolute Maximum Ratings 1>_ Voltage on any pin relative to V^121 Power Dissipation Storage Temperature VT -0.5V to +7 V PT 2 W TCTG -65 to +150 *C


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    67S4000-Ã 5/S5/70 S4000 128KX32SRAM 256Kx16 512Kx8) PDF

    07-HN

    Abstract: XXHX 5962-9461109HMX
    Text: M/HITE M I C R O E L E C T R O N I C S m 512Kx32 SRAM MODULE WS512K32-XXX PRELIMINARY* FEATURES • Access Times of 17,20, 25, 35, 45, 55nS TTL Compatible Inputs and Outputs ■ Packaging 5 Volt Power Supply • 66 pin, PGA Type, 1.385 inch square, Hermetic


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    WS512K32-XXX 512Kx32 WS512K32-XG2X- WS512K32-XH2X WS512K32-XG4X 05HMX 06HMX 07HMX 08HMX 09HMX 07-HN XXHX 5962-9461109HMX PDF