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    128KX8 CMOS SRAM 600MIL Search Results

    128KX8 CMOS SRAM 600MIL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC74HC14AF Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, Inverter, SOP14 Visit Toshiba Electronic Devices & Storage Corporation
    74VHCT541AFT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, Octal Buffer, TSSOP20B Visit Toshiba Electronic Devices & Storage Corporation
    74HC14D Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, Inverter, SOIC14 Visit Toshiba Electronic Devices & Storage Corporation
    74VHC541FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, Octal Buffer, TSSOP20B Visit Toshiba Electronic Devices & Storage Corporation
    74HC04D Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, Inverter, SOIC14 Visit Toshiba Electronic Devices & Storage Corporation

    128KX8 CMOS SRAM 600MIL Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    7085NS

    Abstract: 88128 5962-89598 EDI88128C EDI88128LP EDI88130 EDI88130C EDI88130LP
    Text: White Electronic Designs EDI88128C 128Kx8 MONOLITHIC SRAM, SMD 5962-89598 The EDI88128C is a high speed, high performance, Monolithic CMOS Static RAM organized as 128Kx8. FEATURES Access Times of 70, 85, 100ns The device is also available as EDI88130C with an


    Original     		EDI88128C 128Kx8 EDI88128C 128Kx8. 100ns EDI88130C EDI88128) EDI88130) 128Kx8 7085NS 88128 5962-89598 EDI88128LP EDI88130 EDI88130LP PDF

    5962-89598

    Abstract: 88128 EDI88128C EDI88128LP EDI88130 EDI88130C EDI88130LP 7085NS
    Text: EDI88128C HI-RELIABILITY PRODUCT 128Kx8 Monolithic SRAM, SMD 5962-89598 FEATURES • Access Times of 70, 85, 100ns The EDI88128C is a high speed, high performance, Monolithic CMOS Static RAM organized as 128Kx8. ■ Available with Single Chip Selects EDI88128 or Dual Chip


    Original     		EDI88128C 128Kx8 100ns EDI88128C 128Kx8. EDI88128) EDI88130) EDI88130C 128Kx8 5962-89598 88128 EDI88128LP EDI88130 EDI88130LP 7085NS PDF

    Untitled

    Abstract: No abstract text available
    Text: EDI88128C HI-RELIABILITY PRODUCT 128Kx8 Monolithic SRAM, SMD 5962-89598 FEATURES • Access Times of 70, 85, 100ns The EDI88128C is a high speed, high performance, Monolithic CMOS Static RAM organized as 128Kx8. ■ Available with Single Chip Selects EDI88128 or Dual Chip


    Original     		EDI88128C 128Kx8 100ns EDI88128) EDI88130) EDI88128C 128Kx8. EDI88130C PDF

    EDI88128CS

    Abstract: No abstract text available
    Text: EDI88128CS HI-RELIABILITY PRODUCT 128Kx8 Monolithic SRAM, SMD 5962-89598 FEATURES • Access Times of 15*, 17, 20, 25, 35, 45, 55ns The EDI88128CS is a high speed, high performance, 128Kx8 megabit density Monolithic CMOS Static RAM. ■ CS and OE Functions for Bus Control


    Original     		EDI88128CS 128Kx8 EDI88128CS 128Kx8 EDI88128LPS) EDI881 MIL-STD-883 PDF

    5962-8959

    Abstract: No abstract text available
    Text: EDI88128CS HI-RELIABILITY PRODUCT 128Kx8 Monolithic SRAM, SMD 5962-89598 FEATURES • Access Times of 15*, 17, 20, 25, 35, 45, 55ns The EDI88128CS is a high speed, high performance, 128Kx8 megabit density Monolithic CMOS Static RAM. ■ CS and OE Functions for Bus Control


    Original     		EDI88128CS 128Kx8 EDI88128LPS) EDI88128CS MIL-STD-883 5962-8959 PDF

    Utron Technology

    Abstract: UT62L1024 UT62L1024PC-35L UT62L1024PC-35LL 128Kx8 cmos sram 600mil
    Text:  UTRON Rev. 1.9 UT62L1024 128KX8 BIT LOW POWER CMOS SRAM REVISION HISTORY REVISION Rev. 1.0 Rev. 1.1 Rev. 1.2 Rev. 1.3 Rev. 1.4 Rev. 1.5 Rev. 1.6 Rev. 1.7 Rev. 1.8 Rev. 1.9 DESCRIPTION Original 128Kx 8 Low Voltage CMOS SRAM 之TN8106 body 已作fine tunings,將


    Original     		UT62L1024 128KX8 128Kx TN8106 ISB10 -55ns 8mmx13 P80033 Utron Technology UT62L1024 UT62L1024PC-35L UT62L1024PC-35LL 128Kx8 cmos sram 600mil PDF

    K6X1008C2D-GF55

    Abstract: k6x1008c2d-pf55 K6X1008C2D-GF70 k6x1008c2d-bf55 K6X1008C2D-DF55 K6X1008-C2D-BF55 K6X1008C2D-BF70 samsung k6x1008c2d K6X1008C2D-TF70 K6X1008C2D
    Text: K6X1008C2D Family CMOS SRAM Document Title 128Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft July 15, 2002 Preliminary 0.1 Revised - Deleted 32-TSOP1-0820R Package Type. - Added Commercial product.


    Original     		K6X1008C2D 128Kx8 32-TSOP1-0820R 32-SOP-525 32-TSOP1-0820F 0820F) K6X1008C2D-GF55 k6x1008c2d-pf55 K6X1008C2D-GF70 k6x1008c2d-bf55 K6X1008C2D-DF55 K6X1008-C2D-BF55 K6X1008C2D-BF70 samsung k6x1008c2d K6X1008C2D-TF70 PDF

    K6X1008C2D-GF70

    Abstract: K6X1008C2D-PQ701 55ns K6X1008C2D K6X1008C2D-DF55 K6X1008C2D-GF55 K6X1008C2D-TF70 K6X1008C2D-B K6X1008C2D-F K6X1008C2D-Q
    Text: K6X1008C2D Family CMOS SRAM Document Title 128Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft July 15, 2002 Preliminary 0.1 Revised - Deleted 32-TSOP1-0820R Package Type. - Added Commercial product.


    Original     		K6X1008C2D 128Kx8 32-TSOP1-0820R 32-SOP-525 32-TSOP1-0820F 0820F) K6X1008C2D-GF70 K6X1008C2D-PQ701 55ns K6X1008C2D-DF55 K6X1008C2D-GF55 K6X1008C2D-TF70 K6X1008C2D-B K6X1008C2D-F K6X1008C2D-Q PDF

    K6X1008C2D-GF55

    Abstract: K6X1008C2D-TF55 K6X1008C2D-TB55 K6X1008C2D-F samsung k6x1008c2d K6X1008C2D-TF70
    Text: Preliminary CMOS SRAM K6X1008C2D Family Document Title 128Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft July 15, 2002 Preliminary 0.1 Revised - Deleted 32-TSOP1-0820R Package Type. - Added Commercial product.


    Original     		K6X1008C2D 128Kx8 32-TSOP1-0820R 0820F) K6X1008C2D-GF55 K6X1008C2D-TF55 K6X1008C2D-TB55 K6X1008C2D-F samsung k6x1008c2d K6X1008C2D-TF70 PDF

    KM681000BLG-7L

    Abstract: KM681000BLP-7L KM681000BLT-5 KM681000B KM681000BL KM681000BLE KM681000BLE-L KM681000BLI KM681000BL-L
    Text: PRELIMINARY CMOS SRAM KM681000B Family 128K x8 bit Low Power CMOS Static RAM FEATURES ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü GENERAL DESCRIPTION Process Technology : 0.6§- CMOS Organization : 128Kx8 Power Supply Voltage : Single 5.0V ¡¾ 10% Low Data Retention Voltage : 2V Min


    Original     		KM681000B 128Kx8 32-DIP, 32-SOP, 32-TSOP 0820R) KM681000BLG-7L KM681000BLP-7L KM681000BLT-5 KM681000BL KM681000BLE KM681000BLE-L KM681000BLI KM681000BL-L PDF

    K6T1008C2E-GB70

    Abstract: K6T1008C2E-TB55
    Text: K6T1008C2E Family CMOS SRAM Document Title 128Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Design target October 12, 1998 Preliminary 1.0 Finalize - Improve tWP form 55ns to 50ns for 70ns product. - Remove 55ns speed bin for industrial product.


    Original     		K6T1008C2E 128Kx8 0820F) K6T1008C2E-GB70 K6T1008C2E-TB55 PDF

    KM681000ELG-5L

    Abstract: KM681000E KM681000EL KM681000ELI KM681000ELI-L KM681000EL-L 32-DIP-600 128Kx8 cmos sram 600mil km681000elg-7
    Text: KM681000E Family CMOS SRAM Document Title 128Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Design target October 12, 1998 Preliminary 1.0 Finalize - Improve tWP form 55ns to 50ns for 70ns product. - Remove 55ns speed bin for industrial product.


    Original     		KM681000E 128Kx8 0820F) KM681000ELG-5L KM681000EL KM681000ELI KM681000ELI-L KM681000EL-L 32-DIP-600 128Kx8 cmos sram 600mil km681000elg-7 PDF

    K6T1008C2E-GB70

    Abstract: K6T1008C2E-DL70 K6T1008C2E-TB55 k6t1008c2e 0855 K6T1008C2E-DB55 K6T1008C2E-DB70 K6T1008C2E-P K6T1008C2E-F k6t1008c2 K6T1008C2EGB70
    Text: K6T1008C2E Family CMOS SRAM Document Title 128Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Design target October 12, 1998 Preliminary 1.0 Finalize - Improve tWP form 55ns to 50ns for 70ns product. - Remove 55ns speed bin from industrial product.


    Original     		K6T1008C2E 128Kx8 0820R) K6T1008C2E-GB70 K6T1008C2E-DL70 K6T1008C2E-TB55 k6t1008c2e 0855 K6T1008C2E-DB55 K6T1008C2E-DB70 K6T1008C2E-P K6T1008C2E-F k6t1008c2 K6T1008C2EGB70 PDF

    K6T1008C2E

    Abstract: K6T1008C2E-DL70 K6T1008C2E-B K6T1008C2E-F K6T1008C2E-L K6T1008C2E-P k6t1008c2e-gb55 K6T1008C2E-GB70
    Text: K6T1008C2E Family CMOS SRAM Document Title 128Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Design target October 12, 1998 Preliminary 1.0 Finalize - Improve tWP form 55ns to 50ns for 70ns product. - Remove 55ns speed bin from industrial product.


    Original     		K6T1008C2E 128Kx8 0820R) K6T1008C2E-DL70 K6T1008C2E-B K6T1008C2E-F K6T1008C2E-L K6T1008C2E-P k6t1008c2e-gb55 K6T1008C2E-GB70 PDF

    k6x1008T2D

    Abstract: No abstract text available
    Text: Preliminary CMOS SRAM K6X1008T2D Family Document Title 128Kx8 bit Low Power CMOS Static RAM Revision History Revision No. 0.0 History Draft Data Remark Initial draft July 15, 2002 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and


    Original     		K6X1008T2D 128Kx8 32-SOP-52 0820F) PDF

    K6T1008C2E-DB70

    Abstract: No abstract text available
    Text: K6T1008C2E Family CMOS SRAM Document Title 128Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Design target October 12, 1998 Preliminary 1.0 Finalize - Improve tWP form 55ns to 50ns for 70ns product. - Remove 55ns speed bin for industrial product.


    Original     		K6T1008C2E 128Kx8 0820F) K6T1008C2E-DB70 PDF

    K6T1008C2E-GB70

    Abstract: K6T1008C2E-DL70 K6T1008C2E K6T1008C2E-DB55 K6T1008C2E-B K6T1008C2E-F K6T1008C2E-L K6T1008C2E-P K6T1008C2ETB70 K6T1008C2E-DB70
    Text: K6T1008C2E Family CMOS SRAM Document Title 128Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Design target October 12, 1998 Preliminary 1.0 Finalize - Improve tWP form 55ns to 50ns for 70ns product. - Remove 55ns speed bin from industrial product.


    Original     		K6T1008C2E 128Kx8 th010 0820R) K6T1008C2E-GB70 K6T1008C2E-DL70 K6T1008C2E-DB55 K6T1008C2E-B K6T1008C2E-F K6T1008C2E-L K6T1008C2E-P K6T1008C2ETB70 K6T1008C2E-DB70 PDF

    p 602

    Abstract: No abstract text available
    Text: WPS128K8-XXX 128Kx8 SRAM PRELIMINARY * PLASTIC PLUS FEATURES • 5 Volt Power Supply ■ Low Power CMOS, 35mW typ. ■ Battery Back-Up Operation ■ Access Times 55, 70, 85nS ■ Standard Commercial Off-The-Shelf COTS Memory Devices for Extended Temperature Range


    Original     		WPS128K8-XXX 128Kx8 600mil 525mil p 602 PDF

    EDI88130C100PI

    Abstract: No abstract text available
    Text: m EDI88130C-RP a • ElfCTHONC CC9GN& NC 128Kx8 Ruggedized Plastic SRAM 128Kx8 Static RAM CMOS, Monolithic F e a tu r e s The EDI88130C is a ruggedized plastic, monolithic Static 128Kx8 bits Monolithic CMOS Static RAM organized as 128Kx8 bits. Random Access Memory


    OCR Scan     		EDI88130C-RP 128Kx8 100ns EDI88130LP) EDI88130C 600mils EDIS8130C-RP EDI88130C100PI PDF

    Untitled

    Abstract: No abstract text available
    Text: A S7C 1024 AS7C 1024L High Performance 128Kx8 CMOS SRAM "PRELIMINARY" 128Kx8 CMOS SRAM Common I/O FEATURES • Organization: 131,072 words x 8 bits • Easy M emory Expansion with C E1, CE2 and OE Options • High Speed: 15/20/25/35 ns Address access time


    OCR Scan     		1024L 128Kx8 128Kx8 660mW 300mil 400mil PDF

    Untitled

    Abstract: No abstract text available
    Text: CMOS SRAM KM681000BL / L-L 128Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 55,70 ns max. • Low Power Dissipation Standby (CMOS): 550(iW (max.) L Version 110fiW (max.) U- Version Operating : 385mW(max.) • Single 5V±10% Power Supply


    OCR Scan     		KM681000BL 128Kx8 110fiW 385mW KM681OQOBLP/BLP-L 600mil) KM681000BLG/BLG-L: 525mil) KM681000BLT/BLT-L 0820F) PDF

    68 1103

    Abstract: KM681000BL A14F
    Text: CMOS SRAM KM681000BL / L-L 128Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION The KM 681000BUBL-L is a 1,048,576-bit high-speed Static Random Access Memory organized as131,072 words by 8 bits. The device is fabricated using Samsung's advanced


    OCR Scan     		KM681000BL 128Kx8 385mW KM681OOOBLP/BLP-L 600mil) KM681000BLG/BLG-L: 525mil) KM681OOOBLT/BLT-L 0820F) KM681000BLR/BLR-L: 68 1103 A14F PDF

    Untitled

    Abstract: No abstract text available
    Text: KM681000AL/KM681000AL-L CMOS SRAM 128KX8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access T im * 70,85,100,120 ns max. • Low Power Dissipation Standby (CMOS): 10pW (typ.) L-Version 5|iW (typ.) LL-Version Operating : 35mW (typ.) • Single S V ±10 % Power Supply


    OCR Scan     		KM681000AL/KM681000AL-L 128KX8 KMG81000ALP/ALP-L: 600mil) KM681000ALG/ALG-L: 525mil) KM681000ALT/ALT-L KM681000ALR/ALR-L: 000AUAL-L 576-bit PDF

    sram 681000

    Abstract: KM681000ELG-5L KM681000
    Text: Preliminary KM681000E Family CMOS SRAM Document Title 128Kx8 bit Low Power CMOS Static RAM Revision History Revision No. 0.0 H istory Draft Data Remark Design target October 12, 1998 Prelim inary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and


    OCR Scan     		KM681000E 128Kx8 600mil) 525mil) 0820F) sram 681000 KM681000ELG-5L KM681000 PDF