Untitled
Abstract: No abstract text available
Text: MEMORY MODULE MRAM 128Kx8-SOP 3DMR1M08VS1426 Magnetoresistive Ram MODULE 1 Mbit MRAM organized as 128Kx8 Pin Assignment Top View SOP 44 (Pitch : 0.80 mm) Features - Organized as 128Kx8. - Single +3.3V +/-0.3V power supply operation. - Symetrical high-speed read and write fast access
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128Kx8-SOP
3DMR1M08VS1426
128Kx8
128Kx8.
MMXX00000000XXX
3DFP-0426-REV
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7085NS
Abstract: 88128 EDI88128C EDI88128LP EDI88130 EDI88130C EDI88130LP
Text: EDI88128C 128KX8 MONOLITHIC SRAM, SMD 5962-89598 FEATURES The EDI88128C is a high speed, high performance, Monolithic CMOS Static RAM organized as 128Kx8. n Access Times of 70, 85, 100ns n Available with Single Chip Selects EDI88128 or Dual Chip Selects (EDI88130)
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EDI88128C
128KX8
EDI88128C
128Kx8.
100ns
EDI88128)
EDI88130)
128Kx8
EDI88130C
7085NS
88128
EDI88128LP
EDI88130
EDI88130LP
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5962-89598
Abstract: 88128 EDI88128C EDI88128LP EDI88130 EDI88130C EDI88130LP 7085NS
Text: EDI88128C HI-RELIABILITY PRODUCT 128Kx8 Monolithic SRAM, SMD 5962-89598 FEATURES • Access Times of 70, 85, 100ns The EDI88128C is a high speed, high performance, Monolithic CMOS Static RAM organized as 128Kx8. ■ Available with Single Chip Selects EDI88128 or Dual Chip
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EDI88128C
128Kx8
100ns
EDI88128C
128Kx8.
EDI88128)
EDI88130)
EDI88130C
128Kx8
5962-89598
88128
EDI88128LP
EDI88130
EDI88130LP
7085NS
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7085NS
Abstract: 88128 5962-89598 EDI88128C EDI88128LP EDI88130 EDI88130C EDI88130LP
Text: White Electronic Designs EDI88128C 128Kx8 MONOLITHIC SRAM, SMD 5962-89598 The EDI88128C is a high speed, high performance, Monolithic CMOS Static RAM organized as 128Kx8. FEATURES Access Times of 70, 85, 100ns The device is also available as EDI88130C with an
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EDI88128C
128Kx8
EDI88128C
128Kx8.
100ns
EDI88130C
EDI88128)
EDI88130)
128Kx8
7085NS
88128
5962-89598
EDI88128LP
EDI88130
EDI88130LP
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CS229
Abstract: EDI88130CS
Text: EDI88130CS HI-RELIABILITY PRODUCT 128Kx8 Monolithic SRAM, SMD 5962-89598 FEATURES • Access Times of 15*, 17, 20, 25, 35, 45, 55ns ■ Battery Back-up Operation • 2V Data Retention EDI88130LPS The EDI88130CS is a high speed, high performance, 128Kx8 bits
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EDI88130CS
128Kx8
EDI88130LPS)
EDI88130CS
128Kx8
MIL-STD-883
CS229
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Untitled
Abstract: No abstract text available
Text: EDI88128C HI-RELIABILITY PRODUCT 128Kx8 Monolithic SRAM, SMD 5962-89598 FEATURES • Access Times of 70, 85, 100ns The EDI88128C is a high speed, high performance, Monolithic CMOS Static RAM organized as 128Kx8. ■ Available with Single Chip Selects EDI88128 or Dual Chip
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EDI88128C
128Kx8
100ns
EDI88128)
EDI88130)
EDI88128C
128Kx8.
EDI88130C
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EDI88130C100PI
Abstract: No abstract text available
Text: m EDI88130C-RP a • ElfCTHONC CC9GN& NC 128Kx8 Ruggedized Plastic SRAM 128Kx8 Static RAM CMOS, Monolithic F e a tu r e s The EDI88130C is a ruggedized plastic, monolithic Static 128Kx8 bits Monolithic CMOS Static RAM organized as 128Kx8 bits. Random Access Memory
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EDI88130C-RP
128Kx8
100ns
EDI88130LP)
EDI88130C
600mils
EDIS8130C-RP
EDI88130C100PI
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Untitled
Abstract: No abstract text available
Text: ^EDI E D I88128V-RP • ELECTRONIC DESIGNS, INC 128Kx8 Ruggedized Plastic Static Ram 128Kx8 Static RAM CMOS, Monolithic Features 128Kx8 bit CMOS Static EDI's ruggedized plastic 128Kx8 SRAM allow s the user to Random Access Memory capitalize on the cost advantage o f using a plastic com po
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I88128V-RP
128Kx8
i8V20MI
EDI88128V25MI
EDI88128V
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EDI88128V15MI
Abstract: EDI88128V15MM EDI88128V20MM EDI88128V25MM
Text: EDI88128V-RP ^EDI • ELECTRONIC DESIGNS. INC 128KxSRuggedized Plastic Static Ram 128Kx8 Static RAM CMOS, Monolithic Features 128Kx8 bit CMOS Static EDI's ruggedized plastic 128Kx8 SRAM allow s the use rto Random Access Memory capitalize on the cost advantage of using a plastic com po
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EDI88128V-RP
128KxSRuggedized
128Kx8
EDI88128V
EDI88128V15MI
EDI88128V15MM
EDI88128V20MM
EDI88128V25MM
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AS4C1M16FS
Abstract: 1Mx16 flash 3.3v 1Mx8 SRAM
Text: Product number AS29F002 256Kx8 5V boot sector Flash. 433 AS7C181024LL 128Kx8 1,8V Intelliwatt SRAM. 129 j4S29F03 0 128KX8 SV equal sector Flash. 423
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AS29F002
j4S29F03
AS29F040
AS29F080
AS29F200
AS29F400
AS291X008
AS29LL800
AS29LV002
AS29LV008
AS4C1M16FS
1Mx16 flash
3.3v 1Mx8 SRAM
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Untitled
Abstract: No abstract text available
Text: ^EDI _EDI88130CS BeeJronie Designs toe. High Performance Megabit Monolithic SRAM PiEyiiiMY 128Kx8 Monolithic CMOS Static RAM, High Speed Features The EDI88130CS is a high speed, high performance, monolithic Static RAM organized as 128Kx8 bits.
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EDI88130CS
128Kx8
EDI88130CS
EDI88130LPS,
EDI88130LPS
EDI88130CS15MC
EDI88130CS17MC
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Untitled
Abstract: No abstract text available
Text: EDI88128CS ^ E D I Beclronic D*slgrts Inc. ’ High Performance Megabit Monolithic SRAM 128Kx8 Monolithic High Speed CMOS Static RAM Features The EDI88128CS is a high speed, high performance, megabit density monolithic Static RAM organized as 128Kx8 bits.
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EDI88128CS
128Kx8
EDI88128CS
128Kx8
EDI88128LPS
MIL-STD-883,
28LPS45TB
EDI88128CS55TB
EDI88128LPS55TB
EDI88128CS20ZB
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Untitled
Abstract: No abstract text available
Text: _ EDI88128CS ^ EDI B*drortic Designs inc. High Performance Megabit Monolithic SRAM 128Kx8 Monolithic High Speed CMOS Static RAM Features The EDI88128CS is a high speed, high performance, megabit density monolithic Static RAM organized as 128Kx8 bits.
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EDI88128CS
128Kx8
EDI88128CS
128Kx8
EDI88128LPS,
EDI88128LPS)
CS17HC
EDI88128LPS17HC
EDI88128LPS20HC
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KM68U1000B
Abstract: KM68V1000B
Text: CMOS SRAM KM68V1000B, KM68U1000B Family 128Kx8 bit Low Power & Low Vcc CMOS Static RAM GENERAL DESCRIPTION FEATURE SUMMARY • Process Technology: 0.6 um CMOS • Organization : 128Kx8 • Power Supply Voltage KM68V1000B fa m ily : 3.3V +/- 0.3V KM68U1000B family : 3.0V +/- 0.3V
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KM68V1000B,
KM68U1000B
128Kx8
128Kx8
KM68V1000B
32-SOP,
32-TSOP
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Untitled
Abstract: No abstract text available
Text: EDI88128C ELECTRONIC DESIGNS INC. High Performance Megabit Monolithic SRAM 128Kx8 Monolithic CMOS Static RAM, High Speed Features The EDI88128C is a high speed, high performance, monolithic Static RAM organized as 128Kx8 bits. The device is also available as EDI88130C with an
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EDI88128C
128Kx8
EDI88128C
EDI88130C
EDl88128LPandEDI88130LP,
88128C
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megatron
Abstract: 10N12 Beacon 406 MHz AS7C31024 BJ 919 26A41
Text: High Performance 128Kx8 3.3V CMOS SRAM H J 8 |j ^ AS7C31024 AS7C31024L PRELIMINARY _ Low Voltage 128Kx8 CMOS SRAM Common I/O FEATURES • Organization: 131,072 words x 8 bits • Equal access and cycle times • Single 3.3 ±0.3V power supply
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AS7C31024
128Kx8
AS7C31024L
D3H41!
megatron
10N12
Beacon 406 MHz
AS7C31024
BJ 919
26A41
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EDI88130C70CB
Abstract: EDI88128C100CB
Text: moi _ EDI88128C ELECTRONIC DESIGNS INC. • High Performance Megabit Monolithic SRAM 128Kx8 Monolithic CMOS Static RAM, High Speed Features 128Kx8 bits Monolithic CMOS Static Random Access Memory • Access Times: 70,85 and 100ns • Available with Single EDI88128 or Dual
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EDI88128C
128Kx8
EDI88128C
EDI88130C
EDI88128LP
EDI88130LP,
EDI88128P70CB
EDI88128P85CB
EDI88128P100CB
EDI88130C70CB
EDI88128C100CB
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681000CLP
Abstract: P55n 681000C 2U27 0-00C M681000CL
Text: Advance Information KM681000C Family CMOS SRAM 128Kx8 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4 uM CMOS • Organization : 128Kx8 • Power Supply Voltage : Single 5V +/-10% The KM681000C family is fabricated
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KM681000C
128Kx8
128Kx8
32-DIP,
32-SOP,
32-TSOP
KM681000CL
681000CLP
P55n
681000C
2U27
0-00C
M681000CL
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Untitled
Abstract: No abstract text available
Text: _ EDI88130CS m o \ Bedronic Detignt Inc. High Performance Megabit Monolithic SRAM 128Kx8 Monolithic CMOS Static RAM, High Speed Features The EDI88130CS is a high speed, high performance, monolithic Static RAM organized as 128Kx8 bits. An additional chip enable line provides system memory
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EDI88130CS
128Kx8
EDI88130CS
EDI88130LPS,
EDI88130CS55NB
EDI88130LPS55NB
EDI88130CS20TB
EDI88130LPS20TB
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30df
Abstract: No abstract text available
Text: Preliminary KM68FS1000Z, KM68FR1000Z Family CMOS SRAM 128KX8 bit Super Low Power and Low voltage Full CMOS SRAM with 48-CSP Chip Scale Package FEATURES SUM M ARY G EN ERAL DESCRIPTION • Process Technology : 0.4nm Full CMOS • Organization: 128Kx8 • Power Supply Voltage
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KM68FS1000Z,
KM68FR1000Z
48-CSP
128Kx8
KM68FS1000Z
128KX8
30df
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ed188130
Abstract: EDI8M8128C 88128 EDI88130 MM4116 88130C
Text: EDI88128C/LP/P Electronic Doaigm Inc. Megabit Monolithic SRAM 128Kx8 Static RAM CMOS, Monolithic Features The EDI88128C/LP/P* is a high performance, mega bit density monolithic Static RAM organized as 128Kx8 bits, designed for use in systems where fast computa
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EDI88128C/LP/P
128Kx8
EDI88128C/LP/P*
EDI88128C/LP/P
EDI88128/88130C/LP/P
EDI88128LP
EDI88130LP)
ed188130
EDI8M8128C
88128
EDI88130
MM4116
88130C
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ed188130
Abstract: EDI88130CS25CB EDI88130CS20TB EDI88130CS OD020
Text: EDI88130CS ^EDI Electronic Designs Inc. • High Performance Megabit Monolithic SRAM 128Kx8 Monolithic CMOS Static RAM, High Speed Features The EDI88130CS is a high speed, high performance, monolithic Static RAM organized as 128Kx8 bits. An additional chip enable line provides system memory
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128Kx8
EDI88130CS
EDI88130LPS,
MIL-STD-883,
EDI88130CS
ed188130
EDI88130CS25CB
EDI88130CS20TB
OD020
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EDI88130CS25CB
Abstract: No abstract text available
Text: ^ED I _ EDI88130CS Electronic Designs Inc.i High Performance Megabit Monolithic SRAM 128Kx8 Monolithic CMOS Static RAM, High Speed Features The EDI88130CS is a high speed, high performance, monolithic Static RAM organized as 128Kx8 bits. An additional chip enable line provides system memory
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EDI88130CS
128Kx8
EDI88130LPS)
EDI88130CS25CB
DI881
30CS25CC
30C325CI
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EDI88128CS45CB
Abstract: EDI88128CS55CB EDI88128LPS45NB EDI88128LPS55TB EDI88128LPS EDI88128CS20CC
Text: ^EDI _ EDI88128CS ELECTRONIC DEIG N S INC. High Performance Megabit Monolithic SRAM 128Kx8 Monolithic High Speed CMOS Static RAM Features 128Kx8 bit CMOS Static Random Access Memory • Fast Access Times: 20*, 25,35,45, and 55ns • E and G Functions for Bus Control
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128Kx8
EDI88128CS
EDI88128LPS,
MIL-STD-883,
EDI88128CS
EDI88128CS45CB
EDI88128CS55CB
EDI88128LPS45NB
EDI88128LPS55TB
EDI88128LPS
EDI88128CS20CC
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