RDRAM RAMBUS
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4R256FKE6D Direct RambusTM DRAM RIMMTM Module 256M-BYTE 128M-WORD x 16-BIT Description The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other
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MC-4R256FKE6D
256M-BYTE
128M-WORD
16-BIT)
MC-4R256FKE6D
PD488588)
600MHz,
711MHz
800MHz
RDRAM RAMBUS
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Untitled
Abstract: No abstract text available
Text: HB52RF1289E2U-75B EO 1 GB Registered SDRAM DIMM 128-Mword x 72-bit, 133 MHz Memory Bus, 2-Bank Module 36 pcs of 64 M × 4 Components PC133 SDRAM L E0019H10 (1st edition) (Previous ADE-203-1195A (Z) Preliminary Jan. 30, 2000 Description Pr uc od The HB52RF1289E2U belongs to 8-byte DIMM (Dual In-line Memory Module) family, and has been
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HB52RF1289E2U-75B
128-Mword
72-bit,
PC133
E0019H10
ADE-203-1195A
HB52RF1289E2U
HB52RF1289E2U
256-Mbit
HM5225405BTB)
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Hitachi DSA002714
Abstract: Nippon capacitors
Text: HB54R1G9F2-A75B/B75B/10B 1 GB Registered DDR SDRAM DIMM 128-Mword x 72-bit, 2-Bank Module 36 pcs of 64 M × 4 Components ADE-203-1172 (Z) Preliminary Rev. 0.0 Apr. 10, 2000 Description The HB54R1G9F2 is a 64M × 72 × 2-bank Double Data Rate (DDR) SDRAM Module, mounted 36 pieces of
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HB54R1G9F2-A75B/B75B/10B
128-Mword
72-bit,
ADE-203-1172
HB54R1G9F2
256-Mbit
HM5425401BTB)
Hitachi DSA002714
Nippon capacitors
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Untitled
Abstract: No abstract text available
Text: HB52R1289E2U-A6B/B6B Description L EO 1 GB Registered SDRAM DIMM 128-Mword x 72-bit, 100 MHz Memory Bus, 2-Bank Module 36 pcs of 64 M × 4 Components PC100 SDRAM E0016H10 (1st edition) (Previous ADE-203-1194A (Z) Preliminary Jan. 30, 2001 uc od Pr The HB52R1289E2U belongs to 8-byte DIMM (Dual In-line Memory Module) family, and has been
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HB52R1289E2U-A6B/B6B
128-Mword
72-bit,
PC100
E0016H10
ADE-203-1194A
HB52R1289E2U
256-Mbit
HM5225405BTB)
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ldqb
Abstract: mos B52 diode u2 a54 surface mount transistor A61 MC-4R256FKE8S PD488588 PD488588FF
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4R256FKE8S Direct Rambus DRAM SO-RIMMTM Module 256M-BYTE 128M-WORD x 18-BIT Description The Direct Rambus SO-RIMM module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, mobile personal computers, networking
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MC-4R256FKE8S
256M-BYTE
128M-WORD
18-BIT)
MC-4R256FKE8S
PD488588)
800MHz
M01E0107
ldqb
mos B52
diode u2 a54
surface mount transistor A61
PD488588
PD488588FF
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LDQB
Abstract: MC-4R256FKE8D PD488588 PD488588FF
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4R256FKE8D Direct Rambus DRAM RIMMTM Module 256M-BYTE 128M-WORD x 18-BIT Description EO The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other
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MC-4R256FKE8D
256M-BYTE
128M-WORD
18-BIT)
MC-4R256FKE8D
PD488588)
600MHz,
711MHz
800MHz
LDQB
PD488588
PD488588FF
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MC-4R256FKE8S
Abstract: PD488588 PD488588FF
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4R256FKE8S Direct Rambus DRAM SO-RIMMTM Module 256M-BYTE 128M-WORD x 18-BIT Description EO The Direct Rambus SO-RIMM module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, mobile personal computers, networking systems,
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MC-4R256FKE8S
256M-BYTE
128M-WORD
18-BIT)
MC-4R256FKE8S
PD488588)
800MHz
PD488588
PD488588FF
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Hitachi DSA00190
Abstract: No abstract text available
Text: HB52RF1289E2U-75B 1 GB Registered SDRAM DIMM 128-Mword x 72-bit, 133 MHz Memory Bus, 2-Bank Module 36 pcs of 64 M × 4 Components PC133 SDRAM ADJ-203-562A (Z) 暫定仕様 Rev.0.1 ’00. 10. 6 概要 HB 52 RF12 89 E2 U は，8 バイト DIMM（Du al In-l in e Memory Mo du le）で 8 バイト CPU のメインメモリと
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HB52RF1289E2U-75B
128-Mword
72-bit,
PC133
ADJ-203-562A
Hitachi DSA00190
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HM5225405BTB
Abstract: No abstract text available
Text: HB52R1289E2U-A6B/B6B 1 GB Registered SDRAM DIMM 128-Mword x 72-bit, 100 MHz Memory Bus, 2-Bank Module 36 pcs of 64 M × 4 Components PC100 SDRAM E0016H10 (1st edition) (Previous ADE-203-1194A (Z) Preliminary Jan. 30, 2001 Description The HB52R1289E2U belongs to 8-byte DIMM (Dual In-line Memory Module) family, and has been
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HB52R1289E2U-A6B/B6B
128-Mword
72-bit,
PC100
E0016H10
ADE-203-1194A
HB52R1289E2U
256-Mbit
HM5225405BTB)
HM5225405BTB
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4R256FKE8D Direct RambusTM DRAM RIMMTM Module 256M-BYTE 128M-WORD x 18-BIT Description The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other
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MC-4R256FKE8D
256M-BYTE
128M-WORD
18-BIT)
MC-4R256FKE8D
PD488588)
600MHz,
711MHz
800MHz
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pin diagram of ic 7494
Abstract: No abstract text available
Text: PRELIMINRY DATA SHEET MOS INTEGRATED CIRCUIT MC-4R256FKE8S Direct RambusTM DRAM SO-RIMMTM Module 256M-BYTE 128M-WORD x 18-BIT Description The Direct Rambus SO-RIMM module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, mobile personal computers, networking
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MC-4R256FKE8S
256M-BYTE
128M-WORD
18-BIT)
MC-4R256FKE8S
PD488588)
600MHz
800MHz
M01E0107
pin diagram of ic 7494
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4R256FKE8D Direct Rambus DRAM RIMMTM Module 256M-BYTE 128M-WORD x 18-BIT EO Description The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other
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MC-4R256FKE8D
256M-BYTE
128M-WORD
18-BIT)
MC-4R256FKE8D
PD488588)
600MHz,
711MHz
800MHz
M01E0107
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MC-4R256FKE6D
Abstract: PD488588 PD488588FF
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4R256FKE6D Direct Rambus DRAM RIMMTM Module 256M-BYTE 128M-WORD x 16-BIT Description EO The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other
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MC-4R256FKE6D
256M-BYTE
128M-WORD
16-BIT)
MC-4R256FKE6D
PD488588)
600MHz,
711MHz
800MHz
PD488588
PD488588FF
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MR26V01G53L
Abstract: No abstract text available
Text: OKI Semiconductor MR26V01G53L 64MWord 16Bit or 128MWord 8Bit Page Mode FEDR26V01G53L-02-01 Issue Date: Jul. 29, 2005 P2ROM FEATURES ? 64M-word 16-bit / 128M-word 8-bit electrically switchable configuration ? Page size of 8-word x 16-Bit or 16-word x 8-Bit
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MR26V01G53L
64MWord
16Bit
128MWord
FEDR26V01G53L-02-01
64M-word
16-bit
128M-word
16-word
MR26V01G53L
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Untitled
Abstract: No abstract text available
Text: HB52R1289E22-A6B/B6B 1 GB Registered SDRAM DIMM 128-Mword x 72-bit, 100 MHz Memory Bus, 2-Bank Module 36 pcs of 64 M × 4 Components PC100 SDRAM E0017H20 (Ver. 2.0) Aug. 20, 2001 (K) Description The HB52R1289E22 belongs to 8-byte DIMM (Dual In-line Memory Module) family, and has been
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HB52R1289E22-A6B/B6B
128-Mword
72-bit,
PC100
E0017H20
HB52R1289E22
256-Mbit
HM5225405BTB)
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4R256FKE8S Direct RambusTM DRAM SO-RIMMTM Module 256M-BYTE 128M-WORD x 18-BIT Description The Direct Rambus SO-RIMM module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, mobile personal computers, networking
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MC-4R256FKE8S
256M-BYTE
128M-WORD
18-BIT)
MC-4R256FKE8S
PD488588)
800MHz
M01E0107
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4R256FKE8S-840 Direct Rambus DRAM SO-RIMMTM Module 256M-BYTE 128M-WORD x 18-BIT Description The Direct Rambus SO-RIMM module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, mobile personal computers, networking
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MC-4R256FKE8S-840
256M-BYTE
128M-WORD
18-BIT)
MC-4R256FKE8S
PD488588)
800MHz
M01E0107
E0257N10
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NEC 12D
Abstract: ic marking B48 marking a70 8 pin ic marking B44
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT MC-4R256CPE6C Direct RambusTM DRAM RIMMTM Module 256M-BYTE 128M-WORD x 16-BIT Description The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other
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MC-4R256CPE6C
256M-BYTE
128M-WORD
16-BIT)
MC-4R256CPE6C
PD488448)
600MHz,
711MHz
800MHz
NEC 12D
ic marking B48
marking a70 8 pin ic
marking B44
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4R256FKE8S Direct Rambus DRAM SO-RIMMTM Module 256M-BYTE 128M-WORD x 18-BIT EO Description The Direct Rambus SO-RIMM module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, mobile personal computers, networking
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MC-4R256FKE8S
256M-BYTE
128M-WORD
18-BIT)
MC-4R256FKE8S
PD488588)
800MHz
M01E0107
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Untitled
Abstract: No abstract text available
Text: FEDR26V01G53L-002-01 Issue Date: Oct. 01, 2008 MR26V01G53L 64M–Word x 16–Bit or 128M–Word × 8–Bit Page Mode P2ROM FEATURES • · · · · · · · · 64M-word × 16-bit / 128M-word × 8-bit electrically switchable configuration Page size of 8-word x 16-Bit or 16-word x 8-Bit
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FEDR26V01G53L-002-01
MR26V01G53L
64M-word
16-bit
128M-word
16-word
MR26V01G53L-xxxMB
70-pin
P-SSOP70-500-0
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ic marking B48
Abstract: marking A32 MC-4R256CPE6C elpida B81
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT MC-4R256CPE6C Direct RambusTM DRAM RIMMTM Module 256M-BYTE 128M-WORD x 16-BIT Description EO The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other
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MC-4R256CPE6C
256M-BYTE
128M-WORD
16-BIT)
MC-4R256CPE6C
PD488448)
600MHz,
711MHz
800MHz
ic marking B48
marking A32
elpida B81
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MIG toshiba
Abstract: ABB B45 THMR1E16-6 THMR1E16-7 B75 ABB hiab 837 B34 toshiba mig
Text: TOSHIBA THMR1E16-6/-7/-8 TO SH IBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 134,217,728-WORD BY 18-BIT 256M Bytes Direct Rambus DRAM MODULE DESCRIPTION The THMR1E16 is a 134,217,728-word by 18-bit direct rambus dynamic RAM module consisting of 8 TC59RM718MB and 8 TC59M718RB Direct Rambus DRAMs on a printed circuit board.
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THMR1E16-6/-7/-8
128M-word
600MHz
711MHz
800MHz
16cydes)
-16CSP
MIG toshiba
ABB B45
THMR1E16-6
THMR1E16-7
B75 ABB
hiab
837 B34
toshiba mig
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64H40
Abstract: circuit of rowa television CM05
Text: TOSHIBA TH M R2 N8Z-6/-7/-8 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 134,217,728-WORD BY 16-BIT 256M Bytes Direct Rambus DRAM MODULE DESCRIPTION The THMR2N8Z is a 134,217,728-word by 16-bit direct rambus dynamic RAM module consisting of 8 TC59RM816MB Direct Rambus DRAMs on a printed circuit board.
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728-WORD
16-BIT
16-bit
TC59RM816MB
128M-word
600MHz
128M-wordX16
711MHz
64H40
circuit of rowa television
CM05
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Direct-Rambus-RIMM
Abstract: MC-4R256CEE6B MC-4R256CEE6C uPD488448
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT MC-4R256CEE6B, 4R256CEE6C Direct Rambus DRAM RIMM™ Module 256M-BYTE 128M-WORD x 16-BIT Description The Direct Rambus RIMM module Is a general purpose high-performance memory module subsystem suitable for
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OCR Scan
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MC-4R256CEE6B,
4R256CEE6C
256M-BYTE
128M-WORD
16-BIT)
4R256CEE6C
uPD488448
600MHz,
800MHz
Direct-Rambus-RIMM
MC-4R256CEE6B
MC-4R256CEE6C
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