BZX85B
Abstract: BZX85B2V7 DIODE BZX85b
Text: BZX85B. Vishay Telefunken Silicon Epitaxial Planar Z–Diodes Features D D D D Sharp edge in reverse characteristics Low reverse current Low noise Very high stability Applications 94 9369 Voltage stabilization Order Instruction Type BZX85B2V7 Ordering Code
|
Original
|
BZX85B.
BZX85B2V7
BZX85B2V7
D-74025
12-Mar-01
BZX85B
DIODE BZX85b
|
PDF
|
Diode A007
Abstract: No abstract text available
Text: BZX85C. Vishay Telefunken Silicon Epitaxial Planar Z–Diodes Features D D D D D Sharp edge in reverse characteristics Low reverse current Low noise Very high stability Available with tighter tolerances Applications 94 9369 Voltage stabilization Order Instruction
|
Original
|
BZX85C.
BZX85C2V7â
BZX85C2V7
D-74025
12-Mar-01
Diode A007
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BZT55C. Vishay Telefunken Silicon Epitaxial Planar Z–Diodes Features D D D D D Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances 96 12009 Applications Voltage stabilization Order Instruction
|
Original
|
BZT55C.
BZT55C2V4â
BZT55C2V4
300K/W
D-74025
12-Mar-01
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TZQ5221B.TZQ5267B Vishay Telefunken Silicon Epitaxial Planar Z–Diodes Features D D D D D Very sharp reverse characteristic Low reverse current level Available with tighter tolerances Very high stability Low noise 96 12009 Applications Voltage stabilization
|
Original
|
TZQ5221B.
TZQ5267B
TZQ5221Bâ
TZQ5221B
300K/W
25ges
D-74025
12-Mar-01
|
PDF
|
TZQ5221B
Abstract: TZQ5222B TZQ5223B TZQ5224B TZQ5225B TZQ5226B TZQ5267B
Text: TZQ5221B.TZQ5267B Vishay Telefunken Silicon Epitaxial Planar Z–Diodes Features D D D D D Very sharp reverse characteristic Low reverse current level Available with tighter tolerances Very high stability Low noise 96 12009 Applications Voltage stabilization
|
Original
|
TZQ5221B.
TZQ5267B
TZQ5221B
TZQ5221B
300K/W
D-74025
12-Mar-01
TZQ5222B
TZQ5223B
TZQ5224B
TZQ5225B
TZQ5226B
TZQ5267B
|
PDF
|
BZW03D
Abstract: BZW03D6V8
Text: BZW03D. Vishay Telefunken Silicon Z–Diodes and Transient Voltage Suppressors Features D Glass passivated junction D Hermetically sealed package D Clamping sealed package Applications 94 9588 Voltage regulators and transient suppression circuits Order Instruction
|
Original
|
BZW03D.
BZW03D6V8
BZW03D6V8
100ms,
D-74025
12-Mar-01
BZW03D
|
PDF
|
BZW03C
Abstract: BZW03C6V8
Text: BZW03C. Vishay Telefunken Silicon Z–Diodes and Transient Voltage Suppressors Features D Glass passivated junction D Hermetically sealed package D Clamping time in picoseconds Applications 94 9588 Voltage regulators and transient suppression circuits Order Instruction
|
Original
|
BZW03C.
BZW03C6V8
BZW03C6V8
100ms,
D-74025
12-Mar-01
BZW03C
|
PDF
|
BZT03D
Abstract: BZT03D6V2
Text: BZT03D. Vishay Semiconductors Silicon Z–Diodes and Transient Voltage Suppressors Features D Glass passivated junction D Hermetically sealed package D Clamping time in picoseconds Applications 94 9539 Medium power voltage regulators and medium power transient suppression circuits
|
Original
|
BZT03D.
BZT03D6V2
BZT03D6V2
100ms,
D-74025
12-Mar-01
BZT03D
|
PDF
|
"MARKING CODE M"
Abstract: SC-89 Si1035X
Text: Si1035X New Product Vishay Siliconix Complementary N- and P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel –20 rDS(on) (W) ID (mA) 5 @ VGS = 4.5 V 200 7 @ VGS = 2.5 V 175 9 @ VGS = 1.8 V 150 10 @ VGS = 1.5 V 50 8 @ VGS = –4.5 V
|
Original
|
Si1035X
S-03201--Rev.
12-Mar-01
"MARKING CODE M"
SC-89
|
PDF
|
BZX85C 10
Abstract: BZX85B BZX85C BZX85C2V7 TL 43
Text: BZX85C. Vishay Semiconductors Silicon Epitaxial Planar Z–Diodes Features D D D D D Sharp edge in reverse characteristics Low reverse current Low noise Very high stability Available with tighter tolerances Applications 94 9369 Voltage stabilization Order Instruction
|
Original
|
BZX85C.
BZX85C2V7
BZX85C2V7
08-Apr-05
BZX85C 10
BZX85B
BZX85C
TL 43
|
PDF
|
BZX85C
Abstract: BZX85C 10 BZX85B BZX85C2V7 Vishay Diode A4 C 6V2 diode bzx85c vishay
Text: BZX85C. Vishay Semiconductors Silicon Epitaxial Planar Z–Diodes Features D D D D D Sharp edge in reverse characteristics Low reverse current Low noise Very high stability Available with tighter tolerances Applications 94 9369 Voltage stabilization Order Instruction
|
Original
|
BZX85C.
BZX85C2V7
BZX85C2V7
18-Jul-08
BZX85C
BZX85C 10
BZX85B
Vishay Diode A4
C 6V2 diode
bzx85c vishay
|
PDF
|
BZX55B
Abstract: BZX55B2V4
Text: BZX55B. Vishay Telefunken Silicon Epitaxial Planar Z–Diodes Features D D D D D D Very sharp reverse characteristic Low reverse current level Low noise Very high stability Available with tighter tolerances VZ–tolerance ± 2% 94 9367 Applications Voltage stabilization
|
Original
|
BZX55B.
BZX55B2V4
BZX55B2V4
D-74025
12-Mar-01
BZX55B
|
PDF
|
02T02
Abstract: No abstract text available
Text: TZMC. Vishay Semiconductors Silicon Epitaxial Planar Z–Diodes Features D D D D D Very sharp reverse characteristic Low reverse current level Available with tighter tolerances Very high stability Low noise Applications 94 9371 Voltage stabilization Order Instruction
|
Original
|
300K/W
D-74025
12-Mar-01
02T02
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Si1034X New Product Vishay Siliconix N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (mA) 5 @ VGS = 4.5 V 200 7 @ VGS = 2.5 V 175 9 @ VGS = 1.8 V 150 10 @ VGS = 1.5 V 50 1.5ĆV Rated FEATURES BENEFITS APPLICATIONS D D D D D D D D D D
|
Original
|
Si1034X
S-03201--Rev.
12-Mar-01
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: BZT03C. Vishay Telefunken Silicon Z–Diodes and Transient Voltage Suppressors Features D Glass passivated junction D Hermetically sealed package D Clamping time in picoseconds Applications 94 9539 Medium power voltage regulators and medium power transient suppression circuits
|
Original
|
BZT03C.
BZT03C6V2â
BZT03C6V2
100ms,
D-74025
12-Mar-01
|
PDF
|
1N5221B
Abstract: 1N5267B TZM5221B TZM5222B TZM5223B TZM5224B TZM5267B
Text: TZM5221B.TZM5267B Vishay Semiconductors Silicon Z–Diodes Features D Very sharp reverse characteristic D Very high stability D Electrical data identical with the devices 1N5221B.1N5267B D Low reverse current level D VZ–tolerance ± 5% 94 9371 Applications
|
Original
|
TZM5221B.
TZM5267B
1N5221B.
1N5267B
TZM5221B
TZM5221B
300K/W,
D-74025
12-Mar-01
1N5221B
1N5267B
TZM5222B
TZM5223B
TZM5224B
TZM5267B
|
PDF
|
TZQ5221B
Abstract: TZQ5222B TZQ5223B TZQ5224B TZQ5225B TZQ5226B TZQ5267B
Text: TZQ5221B.TZQ5267B Vishay Semiconductors Silicon Epitaxial Planar Z–Diodes Features D D D D D Very sharp reverse characteristic Low reverse current level Available with tighter tolerances Very high stability Low noise 96 12009 Applications Voltage stabilization
|
Original
|
TZQ5221B.
TZQ5267B
TZQ5221B
TZQ5221B
300K/W
D-74025
12-Mar-01
TZQ5222B
TZQ5223B
TZQ5224B
TZQ5225B
TZQ5226B
TZQ5267B
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Si5465EDC New Product Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.037 @ VGS = –4.5 V –7.0 –12 0.048 @ VGS = –2.5 V –6.1 0.065 @ VGS = –1.8 V –5.2 1206-8 ChipFET S 1 D D D D D D G S Marking Code 5.4 kW
|
Original
|
Si5465EDC
S-03191--Rev.
12-Mar-01
|
PDF
|
Untitled
Abstract: No abstract text available
Text: WSK Vishay Dale Power Metal Strip Resistors, Low Value, Surface Mount, 4 - Terminal FEATURES • 4-Terminal design allows for 1% tolerance down to 0.001Ω and 0.5% tolerance down to 0.003Ω • Ideal for all types of precision current sensing, voltage
|
Original
|
WSK2512
000Hz
25mm/second
MIL-STD-202
12mm/Embossed
EIA-481-1A
178mm/7"
12-Mar-01
|
PDF
|
DZ23C2V7
Abstract: DZ23C51 marking code sot-23 51 national 3V6 SOT-23
Text: DZ23C2V7–DZ23C51 Vishay Telefunken 300 mW Dual Surface Mount Zener Diodes Features D D D D D SOT–23 surface mount package 300 mW power dissipation rating Ideally suited for automatic insertion DVZ for both diodes in one case is ≤ 5% Common anode style available see AZ series
|
Original
|
DZ23C2V7
DZ23C51
DZ23C2V7
D-74025
12-Mar-01
DZ23C51
marking code sot-23 51 national
3V6 SOT-23
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BZT03D. Vishay Telefunken Silicon Z–Diodes and Transient Voltage Suppressors Features D Glass passivated junction D Hermetically sealed package D Clamping time in picoseconds Applications 94 9539 Medium power voltage regulators and medium power transient suppression circuits
|
Original
|
BZT03D.
BZT03D6V2â
BZT03D6V2
100ms,
D-74025
12-Mar-01
|
PDF
|
BZX55C
Abstract: BZX55B BZX55C2V4 bzx5
Text: BZX55C. Vishay Telefunken Silicon Epitaxial Planar Z–Diodes Features D D D D D Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances Applications 94 9367 Voltage stabilization Order Instruction
|
Original
|
BZX55C.
BZX55C2V4
BZX55C2V4
D-74025
12-Mar-01
BZX55C
BZX55B
bzx5
|
PDF
|
BZW03D
Abstract: BZW03D6V8
Text: BZW03D. Vishay Semiconductors Silicon Z–Diodes and Transient Voltage Suppressors Features D Glass passivated junction D Hermetically sealed package D Clamping sealed package Applications 94 9588 Voltage regulators and transient suppression circuits Order Instruction
|
Original
|
BZW03D.
BZW03D6V8
BZW03D6V8
100ms,
D-74025
12-Mar-01
BZW03D
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 8 THIS DRAWING IS UNPU BUSHED. COPYRIGHT 19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. .19 DIST LOC ALL RIGHTS RESERVED. GP REVISIONS 00 LTR DESCRIPTION □ATE REVISED PER 0S1D-0032-01 KEY 12MAR01 MM APVD AH DS D D 22.98 [.905] MAX, [,2 9 5 ] A MATERIAL
|
OCR Scan
|
0S1D-0032-01
12MAR01
C51100,
24NOV98
24NOV98
MD-206
23FEB95
omp12184
|
PDF
|