2SD843
Abstract: 7030L
Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SD843 INDUSTRIAL APPLICATIONS _ Unit In mm HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. 10.3MAX. jÿ 3.610.2 FEATURES: • Low Saturation Voltage : v CE sat = 0 *5V (Max.) (at Ic=4A) • Complementary to 2SB753.
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2SD843
2SB753.
Ta-25
2SD843
7030L
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Untitled
Abstract: No abstract text available
Text: ~5h TOSHIBA { D IS CR ETE/O PT O} 9097250 TOSHIBA <DISCRETE/OPTO 2SC2562 DE I T D T T E S D □ □ □ 7 S S Eì fl | ' L)7 - 3 ¿ - o f J7559 SILICON NPN EPITAXIA L TYPE PCT PROCESS) INDUSTRIAL APPLICATIONS _ Unit in mm HIGH CURRENT SWITCHING APPLICATIONS.
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2SC2562
J7559
2SA1012.
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2Sc2565
Abstract: Toshiba 2sc2565 2SA1095 Toshiba 2SA1095 audio amplifier
Text: S IL IC O N PIMP E P IT A X IA L T Y P E PCT PROCESS Unit in mm - -34.3MAX. POWER AMPLIFIER APPLICATIONS. FEATURES: 30,.0’ ', ' ‘ ' "• High Breakdown Voltage : Vc e o =-160V 2.0 2i:4±0.2 - 0Z£±O.2 • High Transition Frequency : £f=60MHz (Typ.)
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-160V
60MHz
2SC2565.
2Sc2565
Toshiba 2sc2565
2SA1095
Toshiba 2SA1095 audio amplifier
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70H40
Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Text: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©
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2SA1162
2SA1163
2SC1815
2SA1015
2SC2458
2SC2459
2SA1048
2SA1049
2SC2712
2SC2713
70H40
transistor equivalent d2012
2SC734 equivalent
3sk73 equivalent
2sb502
2sa776 bl
2sc2075 equivalent
2sk For Low Noise Audio Amplifier Applications
2sa970 BL equivalent
2sa776 gr
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2SC2562
Abstract: 2SC2562 Toshiba
Text: 2SC2562 SILICON NPN EPITAXIAL TYPE INDUSTRIAL APPLICATIONS _ Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. 1D.3MAX. FEATURES: 0 3-6±0.3 • Low Collector Saturation Voltage : vCE sat =0-4v (Max-) (at IC=3A) • High Speed Switching Time : ts tg=1.0iJS (Typ.)
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2SC2562
2SA1012.
-55vL50
12CK240
7CH140,
2SC2562
2SC2562 Toshiba
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2SD553
Abstract: No abstract text available
Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SD553 INDUSTRIAL APPLICATIONS _ Unit In HIGH CURRENT SWITCHING APPLICATIONS. 00.3MAX. POWER AMPLIFIER APPLICATIONS. 0 1 6 = 0 .2 ✓- FEATURES: • Low Saturation Voltage : vCE sat =°-4V (Max.) (at IC=4A)
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2SD553
2SB553.
X25XlmmAtf
2SD553
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2sd717
Abstract: No abstract text available
Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SD717 industrial applications _ Unit in mm 15.9MAX. # 3 l2 ± Q 2 HIGH POWER SWITCHING APPLICATIONS. DC-DC CONVERTER AND DC-AC INVERTER APPLICATIONS. FEATURES: • Low Collector Saturation Voltage : V c E s a t ” 0.4V (Max.), (IC-6A)
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2SD717
2sd717
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2SD717
Abstract: No abstract text available
Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SD717 INDUSTRIAL APPLICATIONS Unit in mm 9 MAX. 0S.2±a2 HIGH POWER SWITCHING APPLICATIONS. DC-DC CONVERTER AND DC-AC INVERTER APPLICATIONS. FEATURES: • Low Collector Saturation Voltage : vCE sat =0-4v (Max.), (Ic=6A) • High Collector Power Dissipation : Pg=80W (Tc=25°C)
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2SD717
12CK240
100X8
2SD717
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2SA1095
Abstract: 2sc2565 Toshiba 2SA1095 audio amplifier 07256
Text: Tb TOSHIBA {DISCRETE/OPTO 9097250 TOSHIBA <DISCRETE/OPTO> DE | TDTVaSO Q0072Sti 1 56C 07256 ' Ö'T“ 3 3 * * 5 1 3 SILIC O N PIMP E P ÌT A X IA L TYPE PCT PROCESS Unit in mm - -34.3MAX. 30,.0’ - Ä4.4:t0.2 POWER AMPLIFIER APPLICATIONS. FEATURES: ',
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Q0072Sti
-160V
60MHz
2SC2565.
2SA1095
2sc2565
Toshiba 2SA1095 audio amplifier
07256
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2SC16
Abstract: 2SC1624 SC1625 2SA814 2SA815 2SC1625 AC75
Text: DISCRETE/OPTO} Sb f 2SC16241 2SC1625, 9097250 T O S HIBA D E l ^ d ^ a S O GDOTMSa 3 | S IL IC O N NPN P LA N A R TYPE T 6 U " 0 T ‘t5»3 < D I S C R E T E /O P T O 1&3MAJC. MEDIUM POWER AMPLIFIER APPLICATIONS. 0 7e 3 5 Unit in mm —0 7 0 3 -6 ± 0 .2
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2SC1624'
2SC1625,
07MS3
2SC16
2SA814
2SA815.
2SC1624
2SC1625
SC1625
2SA815
2SC1625
AC75
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2SC16
Abstract: 2sc1625 2SC1624 k1005 2SA8150
Text: I j ^ X B F m S C R E T E / O P T O } 2 S C 1 6 2 4 1 2 S C 1 6 2 5 , 9097250 TOSHIBA Sh DE I TDTTSSD GD074S3 3 SILICON NPN PLANAR TYPE 3 ô ü " 0 7 ‘ tî»3 DISCRETE/OPTO 0 7^33-07 Unit in mm MEDIUM POWER AMPLIFIER APPLICATIONS. 1 0 l3 M A X . 0 3 -6 ± 0 -2
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GD074S3
2SC1624)
2SA814
2SA815.
2SC1624
2SC1625
2SC16
2SC1624
k1005
2SA8150
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Untitled
Abstract: No abstract text available
Text: TOSHIBA Sb -C] ISCRETE/OPTO> 9097250 TOSHIBA <DISCRETE/OPTO) D Ê ^ D ^ a S O 56C 07776 D 0DG777b 'f- ? SILICON NPN TRIPLE DIFFUSED TYPE S 2 D 7 1 7 Unit in mm 1&9MAX. HIGH POWER SWITCHING APPLICATIONS. 03 .2 ±CL2 ^ol <q DC-DC CONVERTER AND DC-AC INVERTER
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0DG777b
0C0777Ã
300X2mmAtf
100X100X2mm
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