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    12DA Search Results

    12DA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    R5F212DASNFP#V2 Renesas Electronics Corporation 16-bit Microcontrollers with R8C CPU Core (Non Promotion) Visit Renesas Electronics Corporation
    R5F212DASDFP#V2 Renesas Electronics Corporation 16-bit Microcontrollers with R8C CPU Core (Non Promotion) Visit Renesas Electronics Corporation
    66AK2H12DAAWA24 Texas Instruments Multicore DSP+ARM KeyStone II System-on-Chip (SoC) 1517-FCBGA -40 to 100 Visit Texas Instruments
    66AK2H12DAAW24 Texas Instruments Multicore DSP+ARM KeyStone II System-on-Chip (SoC) 1517-FCBGA 0 to 85 Visit Texas Instruments
    66AK2H12DAAWA2 Texas Instruments Multicore DSP+ARM KeyStone II System-on-Chip (SoC) 1517-FCBGA -40 to 100 Visit Texas Instruments
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    12DA Price and Stock

    Suntsu Electronics Inc SXT22412DA38-24.000M

    CRYSTAL 24.000MHZ 12PF SMD
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    DigiKey SXT22412DA38-24.000M Bulk 7,402 1
    • 1 $0.53
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    • 100 $0.353
    • 1000 $0.33534
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    Suntsu Electronics Inc SXT11412DA17-25.000M

    CRYSTAL 25.000MHZ 12PF SMD
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    DigiKey SXT11412DA17-25.000M Bulk 6,426 1
    • 1 $0.65
    • 10 $0.56
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    Suntsu Electronics Inc SXT21412DA07-52.000M

    CRYSTAL 52.000MHZ 12PF SMD
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    DigiKey SXT21412DA07-52.000M Bulk 5,460 1
    • 1 $0.99
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    Suntsu Electronics Inc SXT21412DA17-37.400M

    CRYSTAL 37.400MHZ 12PF SMD
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    DigiKey SXT21412DA17-37.400M Bulk 4,000 1
    • 1 $0.49
    • 10 $0.404
    • 100 $0.3142
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    Suntsu Electronics Inc SXT32412DA16-12.000M

    CRYSTAL 12.000MHZ 12PF SMD
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    DigiKey SXT32412DA16-12.000M Bulk 3,114 1
    • 1 $0.42
    • 10 $0.353
    • 100 $0.2824
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    Find more 12DA price and stock on Findchips.com

    12DA Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    12DA/AHDFA Amperite Over 600 obsolete distributor catalogs now available on the Datasheet Archive - ADJUSTABLE RECYCLE TIME DELAY RELAYS (FLASHERS), HDFA SERIES Scan PDF

    12DA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IXYS MEO 450-12DA

    Abstract: No abstract text available
    Text: MEO 450-12 DA Fast Recovery Epitaxial Diode FRED Module VRRM = 1200 V IFAVM = 453 A trr = 450 ns Preliminary data 3 VRRM V V 1200 1200 1 Type MEO 450-12DA Symbol Test Conditions IFRMS IFAVM ÿÿ① IFRM TC = 75°C TC = 75°C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM


    Original     		PDF 450-12DA IXYS MEO 450-12DA

    Untitled

    Abstract: No abstract text available
    Text: MEA 250-12 DA MEK 250-12 DA MEE 250-12 DA Fast Recovery Epitaxial Diode FRED Module VRRM = 1200 V IFAVM = 260 A = 450 ns trr Preliminary data 2 VRSM VRRM V V 1200 1200 Type MEA 250-12DA 1 2 3 1 MEK 250-12DA 3 1 2 MEE 250-12DA 3 1 2 3 Symbol Test Conditions


    Original     		PDF 250-12DA 250-012DA

    250-12DA

    Abstract: No abstract text available
    Text: MEA 250-12 DA MEK 250-12 DA MEE 250-12 DA Fast Recovery Epitaxial Diode FRED Module VRRM = 1200 V IFAVM = 260 A trr = 450 ns Preliminary data 2 VRSM VRRM V V 1200 1200 Type MEA 250-12DA 1 2 3 1 MEK 250-12DA 3 1 2 MEE 250-12DA 3 1 2 3 Symbol Test Conditions


    Original     		PDF 250-12DA 250-012DA 250-12DA

    Untitled

    Abstract: No abstract text available
    Text: MEO 450-12 DA Fast Recovery Epitaxial Diode FRED Module VRRM = 1200 V IFAVM = 453 A = 450 ns trr Preliminary data 3 VRRM V V 1200 1200 1 Type MEO 450-12DA Symbol Test Conditions IFRMS IFAVM ÿÿ① IFRM TC = 75°C TC = 75°C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM


    Original     		PDF 450-12DA

    Untitled

    Abstract: No abstract text available
    Text: LM340-12DA Linear ICs Fixed Positive Voltage Regulator status Military/High-RelN Output Voltage Nominal V 12 Load Current Max. (A)1.5 Tolerance (%) Drop-Out Volt Max.2.0 P(D) Max. (W)15 Supply Voltage Maximum (V)19 Minimum Operating Temp (øC)0 Maximum Operating Temp (øC)70


    Original     		PDF LM340-12DA Code3-152 NumberLN00300152

    cd 1691 cp

    Abstract: Y3015
    Text: F| .fjU-. FLM5964-12DA J Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 41 dBm Typ. High Gain: G -j^B = 9.5dB (Typ.) High PAE: r iadd = 35% (Typ.) Low IM 3 = -45dBc@Po = 30dBm Broad Band: 5.9 ~ 6.4GHz


    OCR Scan     		PDF FLM5964-12DA -45dBc 30dBm FLM5964-12DA 3100mA cd 1691 cp Y3015

    FLM3742-12D

    Abstract: FLM3742-12DA
    Text: F,?T<.,. FLM3742-12DA 9 r UJ11jU Internally Matched Power GaAs FETs FEATURES • High Output Power: P ^ b = 41 dBm Typ. • • • • • • High Gain: G-|dB = 11 -5clB (Typ) High PAE: riadd = 37% (Typ.) Low IM3 = -45dBc@Po =30dBm Broad Band: 3.7 ~ 4.2GHz


    OCR Scan     		PDF FLM3742-12DA 41dBm -45dBc 30dBm FLM3742-12DA FLM3742-12D

    FLM5964-12DA

    Abstract: No abstract text available
    Text: F, , FLM5964-12DA J Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 41 dBm Typ. High Gain: G ^ b = 9.5dB (Typ.) High PAE: riadd = 35% (Typ.) Low IM3 = -45dBc@Po = 30dBm Broad Band: 5.9 ~ 6.4GHz Impedance Matched Zin/Zout = 50Q


    OCR Scan     		PDF FLM5964-12DA 41dBm -45dBc 30dBm FLM5964-12DA

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS MEA/ MEE / MEK 250-12DA Preliminary Data Fast Recovery Epitaxial Diode FRED Module TYPE: MEA250-12DA 1 640V 600V Symbol FRMS I <x> Ji2dt 2 MEE250-12DA 3 2 3 1 2 4—4 - 4 , 4 -4 -4 , I 1 l< I »I I i I I M 1 >1 I I I 1 H 1 l< I I 367 260 1480 A


    OCR Scan     		PDF 250-12DA MEA250-12DA MEE250-12DA 250-012DA D-68623

    Untitled

    Abstract: No abstract text available
    Text: OIXYS MEO 450-12DA Preliminary Data Fast Recovery Epitaxial Diode FRED Module V RSM ^RRM 1200V 1200V Symbol • frm s ^favm IFRM Test Conditions 2460 A A A A A A A 6 4 0 453 < 10 ^ S' reP- ratin9> pulse width limited by TVJM TVJ = 150°C TVJ = 45° C TVJ = 150°C


    OCR Scan     		PDF 450-12DA

    FLM4450-12DA

    Abstract: No abstract text available
    Text: FLM4450-12DA fujTtsu Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 41 dBm Typ. High Gain: G -j^B = 10.5dB (Typ.) High PAE: r iadd = 36% (Typ.) Low IM3 = -45dBc@Po = 30dBm Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50Q


    OCR Scan     		PDF FLM4450-12DA -45dBc 30dBm FLM4450-12DA

    Untitled

    Abstract: No abstract text available
    Text: • m m T , y riy SH kll «JL JL rn •JIm ; Fast Recovery Epitaxial Diode FRED Modules MEA 140-12DA IFAVM MEE 140-12DA v RRM MEK 140-12DA t 137 A 1200 V 450 ns Preliminary data Type MEA 140-12DA v„ v 1200 1200 1 MEE 140-12DA MEK140-12DA 2 -j I- j I-j


    OCR Scan     		PDF 140-12D 140-12DA MEK140-012DA 0GQ251G

    7785-12DA

    Abstract: No abstract text available
    Text: F L M 7785-12DA Internally Matched Power GaAs F E l s ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Item Condition Symbol Rating Unit Drain-Source Voltage VDS 15 V Gate-Source Voltage vgs -5 V 57.6 w °c °c Total Power Dissipation Tc = 25°C Pt Storage Temperature


    OCR Scan     		PDF 7785-12DA 35dBm 33dBm 27dBm 25dBm 7785-12DA

    d3015

    Abstract: 4450-12DA
    Text: F L M 4450-12DA internally Matched Power GaAs ¡ E i s ABSOLUTE MAXIMUM RATING Am bient Tem perature Ta=25°C Item Condition Symbol Rating Unit Drain-Source Voltage Vd S 15 V Gate-Source Voltage vgs -5 V 57.6 w °c °c Total Power Dissipation Tc = 25°C


    OCR Scan     		PDF 4450-12DA 28dBm 26dBm 22dBm d3015 4450-12DA

    FLM4450-12DA

    Abstract: FLM4450-12D
    Text: F, , FLM4450-12DA J Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 41 dBm Typ. High Gain: G ^ b = 10.5dB (Typ.) High PAE: riadd = 36% (Typ.) Low IM3 = -45dBc@Po = 30dBm Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50Q


    OCR Scan     		PDF FLM4450-12DA 41dBm -45dBc 30dBm FLM4450-12DA FLM4450-12D

    Untitled

    Abstract: No abstract text available
    Text: F| , FLM7785-12DA r UJ11 bU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 41 dBm Typ. High Gain: G ^ b = 7.0dB (Typ.) High PAE: r!add = 32% (Typ.) Low IM3 = -45dBc@Po = 30dBm Broad Band: 7.7 ~ 8.5GHz Impedance Matched Zin/Zout = 50Q


    OCR Scan     		PDF FLM7785-12DA -45dBc 30dBm 7785-12D

    FLM7785-12DA

    Abstract: No abstract text available
    Text: FLM7785-12DA F| « P . Internally M a tc h e d P o w e r G aA s F E T s r U J I 1j U FEATURES • • • • • • • High Output Power: P-idg = 41 dBm Typ. High Gain: G-j^B = 7.0dB (Typ.) High PAE: riadd = 32% (Typ.) Low IM3 = -45dBc@Po = 30dBm Broad Band: 7.7 ~ 8.5GHz


    OCR Scan     		PDF FLM7785-12DA -45dBc 30dBm FLM7785-12DA Channel21

    FLM3742-12DA

    Abstract: No abstract text available
    Text: n FLM3742-12DA Internally Matched Power GaAs F E Ts . I FEATURES • • • • • • • High Output Power: P-idg = 41 dBm Typ. High Gain: G-j^B = 11.5dB (Typ.) High PAE: riadd = 37% (Typ.) Low IM3 = -45dBc@Po =30dBm Broad Band: 3.7 ~ 4.2GHz Impedance Matched Zin/Zout = 50Q


    OCR Scan     		PDF FLM3742-12DA -45dBc 30dBm FLM3742-12DA

    FLM6472-12D

    Abstract: SCL 1058 FLM6472-12DA
    Text: FLM6472-12DA F| Internally Matched Power GaAs FETs I FEATURES • • • • • • • High Output Power: P-idg = 41 dBm Typ. High Gain: = 7.5dB (Typ.) High PAE: riadd = 33% (Typ.) Low IM3 = -45dBc@Po = 30dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Q


    OCR Scan     		PDF FLM6472-12DA -45dBc 30dBm FLM6472-12DA FLM6472-12D SCL 1058

    FLM7177-12D

    Abstract: FLM7177
    Text: çP FLM7177-12DA lUJI I j U Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 41 dBm Typ. High Gain: G-j^B = 7.5dB (Typ.) High PAE: riadd = 33% (Typ.) Low IM3 = -45dBc@Po = 30dBm Broad Band: 7.1 ~ 7.7GHz Impedance Matched Zin/Zout = 50Q


    OCR Scan     		PDF FLM7177-12DA -45dBc 30dBm FLM7177-12DA FLM7177-12D FLM7177

    Untitled

    Abstract: No abstract text available
    Text: FLM 5964 12DA - Internally Matched Power ìaAs F ET s ABSOLUTE MAXIMUM RATING (A m bient Tem perature Ta=25°C Hem SymlxM Condition Rating Unit Drain-Source Voltage VDS 15 V Gate-Source Voltage VGS -5 V 57.6 w Total Power D issipation pt Tc = 25°C Storage Temperature


    OCR Scan     		PDF 28dBm 26dBm 24dBm

    260-12DA

    Abstract: No abstract text available
    Text: Fast Recovery Epitaxial Diode FRED Module MEO 260-12DA iFAVM = 262 A VRRM = 1200 V tir Symbol Test Conditions ^FRMS ^FAVM u TVJ = 125°C; Ts = 65°C TVJ = 125°C; Ts = 65°C; rectangular, d = 0.5 TVJ = 125°C; Ts = 65°C 371 262 1050 A A A ^FSM TVJ = 45°C;


    OCR Scan     		PDF 260-12DA 260-12DA

    FLM7177-12DA

    Abstract: No abstract text available
    Text: FLM7177-12DA r UJ11jU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idB = 41 dBm Typ. High Gain: G ^ b = 7.5dB (Typ.) High PAE: riadd = 33% (Typ.) Low IM3 = -45dBc@Po = 30dBm Broad Band: 7.1 ~ 7.7GHz Impedance Matched Zin/Zout = 50Q


    OCR Scan     		PDF FLM7177-12DA UJ115 41dBm -45dBc 30dBm Voltage077 FLM7177-12DA

    GaAs FETs

    Abstract: No abstract text available
    Text: FLM7177-12DA Internally Matched Power iaAs F E l s ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C Item Symbol Condition Rating Unit Drain-Source Voltage VDS 15 V Gate-Source Voltage vgs -5 V 57.6 w Total Power Dissipation Tc = 25°C pt Storage Temperature


    OCR Scan     		PDF FLM7177-12DA 3100mA GaAs FETs