Untitled
Abstract: No abstract text available
Text: Choke Coils Choke Coils Pin terminal 09D, 11D, 12D, 16B, 18B, 10E, 12E, 15E, 18E Series: Type: Type 09D Type 11D Type 12D Type 16B Type 18B Type 10E–L Type 12E–L Type 15E–L Type 18E–L Pin terminal inductors featuring small size and high performance
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Untitled
Abstract: No abstract text available
Text: Choke Coils Choke Coils Pin terminal 09D, 11D, 12D, 16B, 18B, 10E, 12E, 15E, 18E Series: Type: Type 09D Type 11D Type 12D Type 16B Type 18B Type 10E–L Type 12E–L Type 15E–L Type 18E–L Pin terminal inductors featuring small size and high performance
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Si4646DY
Abstract: SI4646DY-T1-E3 si4646
Text: New Product Si4646DY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES • SkyFET Monolithic TrenchFET Power PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0115 at VGS = 10 V 12e 0.0145 at VGS = 4.5 V 12e VDS (V) 30 Qg (Typ.) MOSFET and Schottky Diode
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Si4646DY
Si4646DY-T1-E3
18-Jul-08
si4646
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Untitled
Abstract: No abstract text available
Text: New Product Si4646DY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0115 at VGS = 10 V 12e 0.0145 at VGS = 4.5 V 12e VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • SkyFET Monolithic TrenchFET® Power
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Si4646DY
2002/95/EC
Si4646DY-T1-E3
Si4646DY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: New Product Si4646DY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0115 at VGS = 10 V 12e 0.0145 at VGS = 4.5 V 12e VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • SkyFET Monolithic TrenchFET® Power
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Si4646DY
2002/95/EC
Si4646DY-T1-E3
Si4646DY-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: New Product Si4646DY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0115 at VGS = 10 V 12e 0.0145 at VGS = 4.5 V 12e VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • SkyFET Monolithic TrenchFET® Power
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Si4646DY
2002/95/EC
Si4646DY-T1-E3
Si4646DYelectronic
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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0868 diode
Abstract: Si4646DY-T1-E3
Text: New Product Si4646DY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0115 at VGS = 10 V 12e 0.0145 at VGS = 4.5 V 12e VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • SkyFET Monolithic TrenchFET® Power
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Si4646DY
2002/95/EC
Si4646DY-T1-E3
Si4646DY-T1-GE3
18-Jul-08
0868 diode
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ignition module
Abstract: DO-204AL J-STD-002 RGP0212E RGP02-12E RGP02-20E
Text: RGP02-12E thru RGP02-20E Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Fast switching for high efficiency
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RGP02-12E
RGP02-20E
DO-204AL
DO-41)
MIL-S-19500
2002/95/EC
2002/96/EC
18-Jul-08
ignition module
DO-204AL
J-STD-002
RGP0212E
RGP02-20E
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RGP02-15
Abstract: ignition module
Text: RGP02-12E thru RGP02-20E Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction SUPERECTIFIER • Fast switching for high efficiency
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RGP02-12E
RGP02-20E
MIL-S-19500
22-B106
AEC-Q101
2002/95/EC
2002/96/EC
DO-204AL
DO-41)
30trademarks
RGP02-15
ignition module
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RGP02-15
Abstract: DO-204AL J-STD-002 RGP02-12E RGP02-20E ignition module
Text: RGP02-12E thru RGP02-20E Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction SUPERECTIFIER • Fast switching for high efficiency
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RGP02-12E
RGP02-20E
MIL-S-19500
22-B106
DO-204AL
DO-41)
AEC-Q101
2002/95/EC
2002/96/EC
11-Mar-11
RGP02-15
DO-204AL
J-STD-002
RGP02-20E
ignition module
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ignition module
Abstract: No abstract text available
Text: RGP02-12E thru RGP02-20E Vishay General Semiconductor Glass Passivated Ultrafast Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Fast switching for high efficiency ed* t n e Pat
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RGP02-12E
RGP02-20E
DO-204AL
DO-41)
MIL-S-19500
2002/95/EC
2002/96/EC
18-Jul-08
ignition module
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motorola g18 pin configration
Abstract: lcd power board schematic APS 254 lcd power board schematic APS 252 GR-1400 2c39 386D pin configuration TCS 3414 HT 12E APPLICATION aph3 4312 020 36643
Text: PHAST -12E Device Programmable, High-Performance ATM/PPP/TDM SONET/SDH Terminator for Level 12 with Enhanced Features TXC-06212 DATA SHEET • Supports simultaneous termination of ATM, POS, and TDM Time Division Multiplexed, e.g., VT1.5, VC-4 etc. traffic
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TXC-06212
STS-12/STS-12c/STM-4/STM-4c,
STS-12/STS-12c/STM-4/STM-4c
STS-12,
TXC-06212-MB,
motorola g18 pin configration
lcd power board schematic APS 254
lcd power board schematic APS 252
GR-1400
2c39
386D pin configuration
TCS 3414
HT 12E APPLICATION
aph3
4312 020 36643
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MV SOT23
Abstract: ZC2812E NA MARKING SOT23 test SOt23 ZC2811E NA SOT23 sot23 1V ZC2813E marking 54 sot23
Text: SOT23 DUAL SCHOTTKY BARRIER DIODES ISSUE 3 - NOVEMBER 1995 ZC2812E ZC2813E ✪ 1 1 2 1 3 2 3 3 2 ZC2813E ZC2812E SOT23 Device Common Anode Series Type 13E 12E Part Marking ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Power Dissipation at Tamb = 25°C Ptot Operating and Storage Temperature Range
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ZC2812E
ZC2813E
ZC2811E
MV SOT23
ZC2812E
NA MARKING SOT23
test SOt23
NA SOT23
sot23 1V
ZC2813E
marking 54 sot23
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ELC06D152E
Abstract: ELC10D181E ELC18B122L ELC10D221E ELC15E101L ELC10D3R3E ELC18B100L ELC18B152L ELC06D2R2E ELC06D2R7E
Text: Choke Coils Choke Coils Japan Singapore Indonesia Pin terminal 06D, 09D, 10D, 12D, 16B, 18B 10E, 12E, 15E, 18E Series: Type: Type 06D Type 09D Type 10D Pin terminal inductors featuring small size and high performance Industrial Property: Patents 1 pending
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10E111L
12E111L
15E111L
18E111L
ELC18E103L
ELC06D152E
ELC10D181E
ELC18B122L
ELC10D221E
ELC15E101L
ELC10D3R3E
ELC18B100L
ELC18B152L
ELC06D2R2E
ELC06D2R7E
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RWR82
Abstract: W82S
Text: INCH-POUND MIL-PRF-39007/12F 17 October 2008 SUPERSEDING MIL-PRF-39007/12E 3 July 1997 PERFORMANCE SPECIFICATION RESISTOR, FIXED, WIRE-WOUND POWER TYPE , NONESTABLISHED RELIABILITY, ESTABLISHED RELIABILITY, AND SPACE LEVEL STYLE RWR82 This specification is approved for use by all Departments
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MIL-PRF-39007/12F
MIL-PRF-39007/12E
RWR82
MIL-PRF-39007.
RWR82,
W82S
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B40 35-10
Abstract: ELC09D102 ELC06D2R2E ELC06D2R7E ELC06D3R3E ELC06D3R9E ELC06D4R7E ELC06D5R6E ELC06D6R8E ELC12D102E
Text: Choke Coils Choke Coils Series: Type: Japan Singapore Indonesia Pin terminal 06D, 09D, 10D, 12D, 16B, 18B 10E, 12E, 15E, 18E Type 06D Type 09D Type 10D Pin terminal inductors featuring small size and high performance Type 12D • Features Type 16B Type 18B
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10E111L
12E111L
15E111L
18E111L
ELC18E103L
B40 35-10
ELC09D102
ELC06D2R2E
ELC06D2R7E
ELC06D3R3E
ELC06D3R9E
ELC06D4R7E
ELC06D5R6E
ELC06D6R8E
ELC12D102E
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Untitled
Abstract: No abstract text available
Text: ZC2812E ZC2813E SOT23 DUAL SCHOTTKY BARRIER DIODES ISSUE 3 -NOVEMBER 1995_ Q_ L . . . 1 •fr 2 3 3 2 SOT23 ZC2813E ZC2812E Device Common Anode Series Type 13E 12E Part Marking ABSOLUTE MAXIMUM RATINGS. PARAMETER
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OCR Scan
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PDF
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ZC2812E
ZC2813E
lplt-20m
ZC2811E
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marking 54 sot23
Abstract: ZC2812
Text: ZC2812E ZC2813E SOT23 DUAL SCHOTTKY BARRIER DIODES IS S U E 3 -NOVEMBER 1995_ Q _ 1. 1 1 3 3 - i XX XX 2 ' 2 SOT23 ZC2813E ZC2812E Device Common Anode Series Type 13E 12E Part Marking ABSOLUTE MAXIMUM RATINGS, PA RA M ETER SYM BO L
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OCR Scan
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ZC2812E
ZC2813E
ZC2811E
marking 54 sot23
ZC2812
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MMBR2857
Abstract: sot23 transistor marking 12E MMBR2857 MOTOROLA BR2857
Text: 12E D I b3fc,7aS4 DQÔ7EÛ1 3 | MOTOROLA SC MOTOROLA XSTRS/R F - - SEM ICONDUCTOR TECHNICAL DATA MMBR2857 The RF Line Ole Source Same as 2N2857 IMPN Silicon High Frequency Transistor . designed primarily for use in high-gain, low-noise amplifier, oscillator
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MMBR2857
2N2857
MMBR2857
sot23 transistor marking 12E
MMBR2857 MOTOROLA
BR2857
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2SC3173
Abstract: No abstract text available
Text: SANYO SEMICONDUCTOR CORP 12E » I 7 CH 7 0 7 L , 0004311 7 T ' 53-11 2SC3173 NPN Epitaxial Planar Silicon Transistor 201OA C R T Display Horizontal Deflection Output Applications 1309B Features: ’ High switching speed • Especially suited for use in high-definition CRT display Vcc=6 to 12V
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H707L,
2SC3173
201OA
1309B
IS-20MA
IS-313
IS-313A
2SC3173
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MMBZ5227B 8B
Abstract: sg 81a 25CC MMBZ5226B MMBZ5227B MMBZ5228B MMBZ5229B MMBZ5231B MMBZ5232B MMBZ5233B
Text: MOTOROLA SC -CDIODES/OPTO} 12E D I L3b72SS QOTTìDb d | '-Il-07 MMBZ5226B thru MMBZ5257B MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA CASE 318-05, STYLE 8 SOT-23 TO-236AA/AB THERMAL CHARACTERISTICS Characteristic Sym bol M ax Unit Pd 225 mW 1.8 m wrc
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L3b72SS
MMBZ5226B
MMBZ5257B
OT-23
O-236AA/AB)
30--ft-O
MM8Z5238B
MMBZ5239B
MMBZ5240B
MMBZ5241B
MMBZ5227B 8B
sg 81a
25CC
MMBZ5226B
MMBZ5227B
MMBZ5228B
MMBZ5229B
MMBZ5231B
MMBZ5232B
MMBZ5233B
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NEC D765
Abstract: 8272 floppy disk controller block diagram of 8272 floppy disk controller 82C226 8272A floppy disk controller block diagram NEC uPA 63 H floppy disk controller 8272 CHIPS TECHNOLOGIES MR 250-2.-5 NS16550
Text: CH I P S . im a £ TE C H N O L O G I E S INC 12E D | SO'ìflllb 0 0 0 1501 b | u u u m .,u iu C H I ir ^ S -T -5 2 -3 3 -D 5 82C607 M ultifunction Controller Single Chip UART and Analog Data Separator
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T-52-33-D5
82C607
NS16550
precompens82C607
NEC D765
8272 floppy disk controller
block diagram of 8272 floppy disk controller
82C226
8272A floppy disk controller block diagram
NEC uPA 63 H
floppy disk controller 8272
CHIPS TECHNOLOGIES
MR 250-2.-5
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BCW60AL
Abstract: BCW60BL BCW60CL BCW60DL MPS3904 sot-23 Marking KN
Text: 12E D I b3f ci 7254 OQflSÖTO ? | MAXIMUM RATINGS Symbol Value U nit Collector-Emitter Voltage Rating v CEO 32 V Collector-Base Voltage VCBO 32 V Emitter-Base Voltage Ve b o 5.0 V ic 100 mAdc Symbol Max U nit PD 225 mW 1.8 mW/°C Roja Pd 556 °C/W Collector Current — Continuous
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BCW60AL,
BCW60AL
BCW60BL
BCW60CL
BCW60DL
MPS3904
sot-23 Marking KN
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MRF522
Abstract: SE317 318b MRFC521
Text: 12E D I MOTOROLA b3b7554 GGÖ7732 MOTOROLA SC T | XSTRS/R F SE M IC O N D U C T O R mmmmm—mmimmmmm TECHNICAL DATA MRF521 MRFC521 MRF522 MRF524 MRF5211,L The RF Line P N P Silicon High-Frequency Transistors . designed primarily for use in the high-gain, low-noise small-signal amplifiers for
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b3b7554
MRF521
MRFC521
MRF522
MRF524
MRF5211
OT-143
MRF52
SE317
318b
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