5SLY12L4500
Abstract: No abstract text available
Text: VCE IC = = 4500 V 42 A IGBT-Die 5SMY 12L4500 Die size: 12.8 x 12.8 mm Doc. No. 5SYA 1310-01 May 08 • • • • Ultra low loss IGBT die Highly rugged SPT+ design Large front bondable area Passivation: SIPOS and silicon nitride plus polyimide Maximum rated values
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12L4500
CH-5600
5SLY12L4500
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848 diode
Abstract: No abstract text available
Text: VRRM = IF = 4500 V 84 A Fast-Diode Die 5SLY 12L4500 Die size: 12.9 x 12.9 mm Doc. No. 5SYA 1675-01 May 08 • • • • Ultra low losses Fast and soft reverse-recovery Large SOA Passivation: SIPOS and silicon nitride plus polyimide Maximum rated values 1
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12L4500
CH-5600
848 diode
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abb traction motor
Abstract: diode 6.5 kv 5SMY 12M4500 76E-12 IGBT 6500 V 86M1280 5SMY86J1280 ABB IGBT 76J1280 76M12
Text: IGBT and Diode dies ABB Semiconductors ABB IGBT and Diode dies from stateof-the-art SPT planar technology platform. Fig.1 Un-sawn wafer, sawn wafer die on frame and pick-and-place dies in waffle-packs ABB Semiconductor has a well established reputation in the
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CH-5600
1768/138a
29palms
abb traction motor
diode 6.5 kv
5SMY 12M4500
76E-12
IGBT 6500 V
86M1280
5SMY86J1280
ABB IGBT
76J1280
76M12
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