IGBT abb
Abstract: No abstract text available
Text: VCE IC = = 1200 V 150 A IGBT-Die 5SMY 12M1200 Die size: 13.5 x 13.5 mm Doc. No. 5SYA1639-01 Sep 06 • Ultra low loss thin IGBT die • Highly rugged SPT+ design • Large bondable emitter area Maximum rated values Parameter Collector-emitter voltage Symbol Conditions
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12M1200
5SYA1639-01
CH-5600
IGBT abb
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Untitled
Abstract: No abstract text available
Text: VCE IC = = 1200 V 150 A IGBT-Die 5SMX 12M1274 Die size: 13.6 x 13.6 mm Doc. No. 5SYA 1305-00 May 08 • • • • Low loss thin IGBT die Highly rugged SPT design Large bondable emitter area Optimized for paralleling Maximum rated values Parameter Collector-emitter voltage
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12M1274
CH-5600
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PDF
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Untitled
Abstract: No abstract text available
Text: VCE IC = = 1200 V 150 A IGBT-Die 5SMX 12M1252 Die size: 13.6 x 13.6 mm Doc. No. 5SYA1623-01 Apr 04 • Low loss thin IGBT die • Highly rugged SPT design • Large bondable emitter area Maximum rated values Parameter Collector-emitter voltage Symbol Conditions
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Original
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12M1252
5SYA1623-01
CH-5600
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PDF
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Untitled
Abstract: No abstract text available
Text: VCE IC = = 1200 V 150 A IGBT-Die 5SMX 12M1273 Die size: 13.6 x 13.6 mm Doc. No. 5SYA1637-00 July 06 • Low loss thin IGBT die • Highly rugged SPT design • Large bondable emitter area Maximum rated values Parameter Collector-emitter voltage Symbol Conditions
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Original
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12M1273
5SYA1637-00
CH-5600
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PDF
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12M1280
Abstract: 5SMY12M1280
Text: VCE IC = = 1200 V 150 A IGBT-Die 5SMY 12M1280 Die size: 13.5 x 13.5 mm Doc. No. 5SYA 1322-02 Dez 12 • Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values
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Original
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12M1280
CH-5600
12M1280
5SMY12M1280
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PDF
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Untitled
Abstract: No abstract text available
Text: VCE IC = = 1200 V 150 A IGBT-Die 5SMY 12M1280 Die size: 13.5 x 13.5 mm Doc. No. 5SYA 1322-03 04 14 • Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values
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Original
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12M1280
CH-5600
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PDF
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Polyimide
Abstract: 12M1280
Text: VCE IC = = 1200 V 150 A IGBT-Die 5SMY 12M1280 Die size: 13.5 x 13.5 mm Doc. No. 5SYA 1322-01 Nov 10 • • • • Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values
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Original
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12M1280
60747ut
CH-5600
Polyimide
12M1280
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PDF
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Untitled
Abstract: No abstract text available
Text: SERIES M and MV MILITARY DCDC CONVERTERS All Military Components Hi Reliability UltraMiniature Isolated DCDC Converters 55ºC +85ºC Ambient Operating Temperature Up to 500V DC Output Now Available Low Profile 1.250" x 0.5" x 0.3" ht. up to 1.25 Watts
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PDF
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Untitled
Abstract: No abstract text available
Text: DC-DC Converters & AC-DC Power Supplies OPTIONAL ENVIRONMENTAL SCREENING All Pico DC-DC Converters and AC-DC Power Supplies are available with high reliability Screening options to insure the maximum quality unit for your system. Select from the list below or call factory for review of your specific applications.
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OCR Scan
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MIL-STD-883,
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PDF
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28MV100
Abstract: 5M15D 24M15 12MV200 28M5S 24M9S 24M12 5MV500 5M9S 12MV450
Text: All Military Components Hi Reliability - Ultra-Miniature Isolated DC-DC Converters -55ºC +85ºC Ambient Operating Temperature Up to 500V DC Output Now Available Low Profile 1.250" x 0.5" x 0.3" ht. up to 1.25 Watts Selected MIL-STD-883 environmental screening available
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Original
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MIL-STD-883
MIL-PRF-27,
MIL-C-39003,
MIL-C-55681,
MIL-R-39008,
MIL-PRF-39017,
28MV100
5M15D
24M15
12MV200
28M5S
24M9S
24M12
5MV500
5M9S
12MV450
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PDF
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Untitled
Abstract: No abstract text available
Text: VRRM = IF = 1200 V 150 A Diode-Die 5SLY 12J1200 Die size: 10 x 10 mm Doc. No. 5SYA 1684-02 04 14 • Ultra low losses Fast and soft reverse-recovery Highly rugged SPT+ design Passivation: Silicon Nitride plus Polyimide Maximum rated values 1 Parameter
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Original
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12J1200
CH-5600
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PDF
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Untitled
Abstract: No abstract text available
Text: SERIES M and MV MILITARY Hi Reliability Ultra-Miniature Isolated DC-DC Converters -55°C TO + 85°C • Diodes JAN TX • Transformers manufactured to MIL-PRF-27 • Capacitors MIL-C-39003, S Level MIL-C-55681, S Level • Resistors MIL-R -39008, S Level MIL-PRF-39017, S Level
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OCR Scan
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MIL-PRF-27
MIL-C-39003,
MIL-C-55681,
MIL-PRF-39017,
MIL-S-19500,
5M12S
5M15S
5M24S
5M28S
5M48S
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PDF
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MSL9351
Abstract: DI512 sl9350 sl90 SL9351 SL9010
Text: The FlexSet PC/AT 80386DX Memory Controller _ SL9351 ADVANCED FEATURES • Supports 80386DX based AT Designs. • Up to 20 MHz Performance. • Enhanced Fast Page Mode/Page Interleave. • Supports 16 M bytes of On Board Memory. • Shadow RAM Feature
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OCR Scan
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80386DX
SL9351
A2-A16,
A20GATE,
CLK8042,
ADD20,
NLDEC16,
A17-A19,
A21-A23,
MSL9351
DI512
sl9350
sl90
SL9351
SL9010
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PDF
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resistor 10k 1 400V 0.25W
Abstract: 3W carbon resistor resistor carbon film packing s12w Rod Resistors
Text: oa CF CARBON FILM RESISTORS |o ° p itg INTRODUCTION c f % t & m t m 2$ & t % it ' n M i & 'i i M M * Ij- it M 'fi High reliability s # # # . • # * ifj t l £ 'fi High stability f c & n t •*-# n / t m ° CF Carbon film resistor with the features of high
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OCR Scan
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10-22M
12M-12MÃ
resistor 10k 1 400V 0.25W
3W carbon resistor
resistor carbon film packing
s12w
Rod Resistors
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PDF
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Untitled
Abstract: No abstract text available
Text: V12PM12 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.53 V at IF = 6 A FEATURES TMBS eSMP® Series • Very low profile - typical height of 1.1 mm • Ideal for automated placement
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Original
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V12PM12
O-277A
AEC-Q101
J-STD-020,
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: V12PM12 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.53 V at IF = 6 A FEATURES TMBS eSMP® Series • Very low profile - typical height of 1.1 mm • Ideal for automated placement
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Original
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V12PM12
O-277A
AEC-Q101
J-STD-020,
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: V12PM12 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.53 V at IF = 6 A FEATURES TMBS eSMP® Series • Very low profile - typical height of 1.1 mm • Ideal for automated placement
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Original
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V12PM12
J-STD-020,
AEC-Q101
O-277A
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: PIC O's TYPICAL CHARACTERISTICS: MILITARY CONVERTERS Test conditions: 25°C ambient and input voltage at nominal value unless otherwise specified. Low Profile 1.250" x.5" x.3" ht. To 1.25 Watts p e l» ° “ ?eo LINE REGULATION: OUTPUT IS DIRECTLY PROPORTIONAL TO THE INPUT.
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OCR Scan
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24M24D
24M28D
24M48D
24M9D
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PDF
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12M50
Abstract: No abstract text available
Text: SE R IE S M PICO Hi Reliability Ultra-Miniature Isolated DC-DC Converters -55°C + 8 5 C * MILITARY DC-DC CONVERTERS • Diodes JAN TX • Transformers manufactured to MIL-T-27 F5S40ZZ •Capacitors MIL-C-39003, S Level MIL-C-55681,S Level •Resistors MIL-R-39008, S Level
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OCR Scan
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MIL-T-27
F5S40ZZ)
MIL-C-39003,
MIL-C-55681
MIL-R-39008,
MIL-S-19500,
28M28D
28M480
8V-48V
12M50
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PDF
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Untitled
Abstract: No abstract text available
Text: VCE IC = = 1200 V 100 A IGBT-Die 5SMY 12K1280 Die size: 11.9 x 11.2 mm Doc. No. 5SYA 1319-02 Dez 12 • Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values
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Original
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12K1280
CH-5600
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PDF
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DC000-DFFFF
Abstract: 80386dx pipeline architecture SL9351 DI512 386DX sl9010 80386DX 16 BIT 80386DX pipeline architecture for 80386DX A21-A23
Text: The FlexSet PC/AT 80386DX Memory Controller SL9351 ADVANCED FEATURES • Supports 80386DX based AT Designs. • Up to 20 MHz Performance. • Enhanced Fast Page Mode/Page Interleave. • Supports 16 M bytes of On Board Memory. • Shadow RAM Feature • 16K granularity
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OCR Scan
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80386DX
SL9351
512X512
A2-A16,
A20GATE,
CLK8042,
ADD20,
NLDEC16,
A17-A19,
DC000-DFFFF
80386dx pipeline architecture
SL9351
DI512
386DX
sl9010
80386DX 16 BIT
pipeline architecture for 80386DX
A21-A23
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PDF
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Untitled
Abstract: No abstract text available
Text: VRRM = IF = 1200 V 150 A Diode-Die 5SLY 12J1200 Die size: 10 x 10 mm Doc. No. 5SYA 1684-01 Dez 12 • Ultra low losses Fast and soft reverse-recovery Highly rugged SPT+ design Passivation: Silicon Nitride plus Polyimide Maximum rated values 1
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Original
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12J1200
CH-5600
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PDF
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12MV450
Abstract: No abstract text available
Text: Pico Electronics: SERIES M and MV MILITARY DC-DC CONVERTERS Page 1 of 8 SERIES M and MV MILITARY DC-DC CONVERTERS All Military Components Hi Reliability - Ultra-Miniature Isolated DC-DC Converters -55ºC +85ºC Ambient Operating Temperature Up to 500V DC Output Now Available
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Original
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MIL-STD-883
MIL-PRF-27,
Capaci/18/2007
com/dcdclow/pe988081
15M9S
12MV450
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PDF
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24M12
Abstract: 24M9S 15MV100
Text: Pico Electronics: SERIES M and MV MILITARY DC-DC CONVERTERS Page 1 of 8 SERIES M and MV MILITARY DC-DC CONVERTERS All Military Components Hi Reliability - Ultra-Miniature Isolated DC-DC Converters -55ºC +85ºC Ambient Operating Temperature Up to 500V DC Output Now Available
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Original
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MIL-STD-883
MIL-PRF-27,
Capaci2007
com/dcdclow/pe988081
15MV100
24M12
24M9S
15MV100
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PDF
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