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    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 4500 V 55 A IGBT-Die 5SMY 12N4500 Die size: 14.3 x 14.3 mm Doc. No. 5SYA 1646-00 Jan 08 • • • • Ultra low loss thin IGBT die Highly rugged SPT+ design Emitter metallisation optimized for press-pack packaging Passivation: SIPOS and Silicon Nitride plus Poymide


    Original     		PDF 12N4500 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: VRRM = IF = 4500 V 110 A Fast-Diode Die 5SLY 12N4500 Die size: 14.3 x 14.3 mm Doc. No. 5SYA 1674-00 Jan 08 • • • • Ultra low losses Fast and soft reverse-recovery Large SOA Passivation: SIPOS and Silicon Nitride Maximum rated values 1 Parameter Symbol


    Original     		PDF 12N4500 CH-5600

    abb traction motor

    Abstract: diode 6.5 kv 5SMY 12M4500 76E-12 IGBT 6500 V 86M1280 5SMY86J1280 ABB IGBT 76J1280 76M12
    Text: IGBT and Diode dies ABB Semiconductors ABB IGBT and Diode dies from stateof-the-art SPT planar technology platform. Fig.1 Un-sawn wafer, sawn wafer die on frame and pick-and-place dies in waffle-packs ABB Semiconductor has a well established reputation in the


    Original     		PDF CH-5600 1768/138a 29palms abb traction motor diode 6.5 kv 5SMY 12M4500 76E-12 IGBT 6500 V 86M1280 5SMY86J1280 ABB IGBT 76J1280 76M12