abb press-pack igbt
Abstract: 5slx12n4506
Text: VCE IC = = 4500 V 40 A IGBT-Die 5SMX 12N4507 Die size: 14.3 x 14.3 mm Doc. No. 5SYA1626-03 July 06 • • • • Low loss, rugged SPT technology Smooth switching for good EMC Emitter metallisation optimized for press-pack packaging Passivation: SIPOS and Silicon Nitride plus Polyimide
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12N4507
5SYA1626-03
sp4507
CH-5600
abb press-pack igbt
5slx12n4506
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Untitled
Abstract: No abstract text available
Text: VCE IC = = 4500 V 40 A IGBT-Die 5SMX 12N4507 Die size: 14.3 x 14.3 mm Doc. No. 5SYA1626-01 Sep 05 • • • • Low loss, rugged SPT technology Smooth switching for good EMC Emitter metallisation optimized for press-pack packaging Passivation: SIPOS and Silicon Nitride plus Polyimide
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12N4507
5SYA1626-01
r4507
CH-5600
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IGBT abb
Abstract: abb press-pack igbt IGBT abb datasheets 5slx12n4506
Text: VCE IC = = 4500 V 40 A IGBT-Die 5SMX 12N4507 Die size: 14.3 x 14.3 mm Doc. No. 5SYA1626-00 Aug.04 • • • • Low loss, rugged SPT technology Smooth switching for good EMC Emitter metallisation optimized for press-pack packaging Passivation: SIPOS and Silicon Nitride plus Polyimide
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Original
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PDF
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12N4507
5SYA1626-00
speN4507
CH-5600
IGBT abb
abb press-pack igbt
IGBT abb datasheets
5slx12n4506
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