12N7800
Abstract: 5STP 12N7800 5SYA1044-02
Text: VDSM = 8500 V ITAVM = 1200 A ITRMS = 1880 A ITSM = 35000 A VT0 = 1.25 V rT = 0.480 mΩ Phase Control Thyristor 5STP 12N8500 Doc. No. 5SYA1044-02 Sep.00 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications
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5SYA1044-02
12N8500
12N8500
12N8200
12N7800
67xVDRM
CH-5600
5STP 12N7800
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ABB 5STP 12
Abstract: No abstract text available
Text: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 8500 V 1200 A 1880 A 35000 A 1.25 V 0.480 mΩ Ω Phase Control Thyristor 5STP 12N8500 Doc. No. 5SYA1044-02 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications
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Original
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PDF
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12N8500
5SYA1044-02
12N8500
12N8200
12N7800
2N8500
CH-5600
ABB 5STP 12
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ch 8500
Abstract: ABB 5STP 12 press pack thyristor 8000 VDRM press pack thyristor 9000 VDRM ABB thyristor 5 5SYA2020
Text: VDRM VDSM IT AV M IT(RMS) ITSM V(T0) rT = = = = = = = 8000 8500 1200 1880 35x103 1.25 0.48 V V A A A V mΩ Phase Control Thyristor 5STP 12N8500 Doc. No. 5SYA1044-02 Nov. 04 • Patented free-floating silicon technology • Low on-state and switching losses
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12N8500
5SYA1044-02
12N8500
12N8200
12N7800
5SYA2020
5SYA2034
CH-5600
ch 8500
ABB 5STP 12
press pack thyristor 8000 VDRM
press pack thyristor 9000 VDRM
ABB thyristor 5
5SYA2020
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Untitled
Abstract: No abstract text available
Text: Key Parameters VDSM = 8500 ITAVM = 1150 ITRMS = 1806 ITSM = 35000 VT0 = 1.25 rT = 0.480 V A A A V mΩ Phase Control Thyristor 5STP 12N8500 Preliminary Doc. No. 5SYA 1044-01 May, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses
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Original
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PDF
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12N8500
12N8500
12N8200
12N7800
67xVDRM
CH-5600
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