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    12T1B Search Results

    12T1B Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    2SA812-T1B-AT Renesas Electronics Corporation Small Signal Bipolar Transistors, MM, / Visit Renesas Electronics Corporation
    2SA812-T1B-A Renesas Electronics Corporation Small Signal Bipolar Transistors, MM, / Visit Renesas Electronics Corporation
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    12T1B Price and Stock

    Samtec Inc SD-112-T-1B

    .100" DOUBLE ROW SCREW MACHINE S
    Free Sample
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    DigiKey SD-112-T-1B Bulk 1
    • 1 $6.56
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    Mouser Electronics SD-112-T-1B
    • 1 $6.56
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    Newark SD-112-T-1B Bulk 1
    • 1 $7.65
    • 10 $7.34
    • 100 $6.06
    • 1000 $4.47
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    Master Electronics SD-112-T-1B
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    • 10 $8.04
    • 100 $6.24
    • 1000 $3.89
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    Sager SD-112-T-1B 1
    • 1 $6.56
    • 10 $6.56
    • 100 $5.25
    • 1000 $3.8
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    Samtec Inc SS-112-T-1B

    SOCKET STRIPS
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    DigiKey SS-112-T-1B Bulk 1
    • 1 $4.27
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    Mouser Electronics SS-112-T-1B
    • 1 $4.27
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    Newark SS-112-T-1B Bulk 1
    • 1 $5.37
    • 10 $5.37
    • 100 $3.94
    • 1000 $2.13
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    Master Electronics SS-112-T-1B
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    • 10 $4.02
    • 100 $3.22
    • 1000 $2.14
    • 10000 $1.57
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    Sager SS-112-T-1B 1
    • 1 $4.27
    • 10 $4.27
    • 100 $2.95
    • 1000 $2.08
    • 10000 $1.9
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    Samtec Inc HSS-112-T-1B

    .100" HIGH-TEMP SINGLE ROW SCREW
    Free Sample
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    DigiKey HSS-112-T-1B Bulk 1
    • 1 $5.21
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    Mouser Electronics HSS-112-T-1B
    • 1 $3.61
    • 10 $3.61
    • 100 $2.89
    • 1000 $2.09
    • 10000 $1.29
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    Newark HSS-112-T-1B Bulk 1
    • 1 $4.49
    • 10 $4.29
    • 100 $3.6
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    Master Electronics HSS-112-T-1B
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    • 10 $4.42
    • 100 $3.54
    • 1000 $2.21
    • 10000 $1.36
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    Sager HSS-112-T-1B 1
    • 1 $3.61
    • 10 $3.61
    • 100 $2.89
    • 1000 $2.09
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    Samtec Inc SS-112-T-1-B

    Conn Socket Strip SKT 12 POS 2.54mm Solder ST Thru-Hole - Bulk (Alt: SS-112-T-1B)
    Free Sample
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    Avnet Americas SS-112-T-1-B Bulk 1
    • 1 $4.1846
    • 10 $3.9195
    • 100 $2.54971
    • 1000 $2.54971
    • 10000 $2.54971
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    Samtec Inc HSS-112-T-1-B

    Conn Socket Strip SKT 12 POS 2.54mm Solder ST Thru-Hole - Bulk (Alt: HSS-112-T-1B)
    Free Sample
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    Avnet Americas HSS-112-T-1-B Bulk 1
    • 1 $3.5378
    • 10 $3.51975
    • 100 $2.80591
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    Find more 12T1B price and stock on Findchips.com

    12T1B Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: HN1D02FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D02FU Ultra High Speed Switching Application Unit: mm z HN1D02FU is composed of 2 unit of cathode common. z Low forward voltage : VF 3 = 0.90V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.)


    Original     		HN1D02FU HN1D02FU PDF

    HN1D02FU

    Abstract: No abstract text available
    Text: HN1D02FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D02FU Ultra High Speed Switching Application Unit in mm z HN1D02FU is composed of 2 unit of cathode common. z Low forward voltage : VF 3 = 0.90V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.)


    Original     		HN1D02FU HN1D02FU PDF

    HN1D01FU

    Abstract: No abstract text available
    Text: HN1D01FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D01FU Ultra High Speed Switching Application Unit in mm z Small package z Low forward voltage : VF 3 = 0.92V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 2.2pF (typ.)


    Original     		HN1D01FU HN1D01FU PDF

    Untitled

    Abstract: No abstract text available
    Text: HN1D02FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D02FU Ultra High Speed Switching Application Unit in mm HN1D02FU is composed of 2 unit of cathode common. Low forward voltage : VF 3 = 0.90V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance


    Original     		HN1D02FU HN1D02FU PDF

    Untitled

    Abstract: No abstract text available
    Text: HN1D01FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D01FU Ultra High Speed Switching Application Unit in mm Small package Low forward voltage : VF 3 = 0.92V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 2.2pF (typ.)


    Original     		HN1D01FU PDF

    HN1D01FU

    Abstract: No abstract text available
    Text: HN1D01FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D01FU Ultra High Speed Switching Application Unit in mm l Small package l Low forward voltage : VF 3 = 0.92V (typ.) l Fast reverse recovery time : trr = 1.6ns (typ.) l Small total capacitance : CT = 2.2pF (typ.)


    Original     		HN1D01FU HN1D01FU PDF

    HN1D02FU

    Abstract: No abstract text available
    Text: HN1D02FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D02FU Ultra High Speed Switching Application Unit in mm z HN1D02FU is composed of 2 unit of cathode common. z Low forward voltage : VF 3 = 0.90V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.)


    Original     		HN1D02FU HN1D02FU PDF

    HN1D02FU

    Abstract: No abstract text available
    Text: HN1D02FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D02FU Ultra High Speed Switching Application Unit in mm l HN1D02FU is composed of 2 unit of cathode common. l Low forward voltage : VF 3 = 0.90V (typ.) l Fast reverse recovery time : trr = 1.6ns (typ.)


    Original     		HN1D02FU HN1D02FU PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON EPITAXIAL PLANAR TYPE HN1D02FU ULTRA HIGH SPEED SWITCHING APPLICATION. • • • • Unit in mm HN1D02FU is composed of2 unit of cathode common. Low Forward Voltage : Vp 3 = 0.90V (Typ.) Fast Reverse Recovery Time : trr = 1.6ns (Typ.) Small Total Capacitance


    OCR Scan     		HN1D02FU HN1D02FU HN1D02FU- PDF

    Untitled

    Abstract: No abstract text available
    Text: S IL IC O N E P IT A X IA L P L A N A R T Y P E HN1D01FU ULTRA HIGH SPEED SW ITCHING APPLICATIO N. Unit in mm • Small Package • Low Forward Voltage • F ast Reverse Recovery Time : • Small Total Capacitance : Vp 3 = 0.92 V (Typ.) 1^ = 1.6ns (Typ.)


    OCR Scan     		HN1D01FU PDF

    Untitled

    Abstract: No abstract text available
    Text: HN1D02FU TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H N 1 D02FU ULTRA HIGH SPEED SWITCHING APPLICATION. • • • • HN1D02FU is composed of 2 Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance Unit in mm unit of cathode common.


    OCR Scan     		HN1D02FU D02FU HN1D02FU 961001EAA2' PDF

    diode n1d

    Abstract: HN1D01FU
    Text: TOSHIBA HN1D01FU TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H N 1 D 0 1 FU ULTRA HIGH SPEED SW ITCHING APPLICATION. • • • • Unit in mm Small Package Low Forward Voltage : Vjr 3 = 0.92V (Typ.) Fast Reverse RecoveryTime : trr= 1.6ns (Typ.) Small Total Capacitance


    OCR Scan     		HN1D01FU 961001EAA2' diode n1d HN1D01FU PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA HN1D02FU TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE h n i n m m m 'm m mmr n 7 F 11 ULTRA HIGH SPEED SWITCHING APPLICATION. • HN1D02FU is composed of 2 un it of cathode common. • Low Forward Voltage • Fast Reverse Recovery Time : t r r = 1.6ns Typ.


    OCR Scan     		HN1D02FU HN1D02FU PDF

    HN1D02FU

    Abstract: No abstract text available
    Text: TOSHIBA HN1D02FU TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H N 1 D02FU ULTRA HIGH SPEED SWITCHING APPLICATION. • HN1D02FU is composed of 2 unit of cathode common. • Low Forward Voltage • Fast Reverse Recovery Time : trr= 1.6ns Typ. • Small Total Capacitance


    OCR Scan     		HN1D02FU N1D02FU HN1D02FU 961001EAA2' PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA HN1D01FU TO SHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H N 1 D 0 1 FU ULTRA HIGH SPEED SW ITCHING APPLICATIO N. • • • • Unit in mm Small Package Low Forward Voltage : Vjr 3 = 0.92V (Typ.) Fast Reverse Recovery Time : trr = 1.6ns (Typ.) Small Total Capacitance


    OCR Scan     		HN1D01FU PDF

    Untitled

    Abstract: No abstract text available
    Text: HN1D01FU TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H N 1 D 0 1 FU ULTRA HIGH SPEED SWITCHING APPLICATION. • • • • Unit in mm Small Package Low Forward Voltage : Vjr 3 = 0.92V (Typ.) Fast Reverse RecoveryTime : trr = 1.6ns (Typ.) Small Total Capacitance


    OCR Scan     		HN1D01FU 961001EAA2' PDF

    e50e

    Abstract: HN1D01FU MARKING TE US6
    Text: TOSHIBA HN1D01FU TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H N 1 D 0 1 FU ULTRA HIGH SPEED SWITCHING APPLICATION. Unit in mm • Small Package • Low Forward Voltage • Fast Reverse Recovery Time : trr= 1.6ns Typ. • Small Total Capacitance : Vp (3) = 0.92V (Typ.)


    OCR Scan     		HN1D01FU N1D01 961001EAA2' e50e HN1D01FU MARKING TE US6 PDF

    Untitled

    Abstract: No abstract text available
    Text: HN1D03FU TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE h n i n n 3 F 11 m m m 'm m m mr v • ULTRA HIGH SPEED SWITCHING APPLICATION. U n it in mm • B u ilt in Anode Common and Cathode Common. TT. *j H unit x 2 .i± a i 1.25±0.1 • Low Forw ard Voltage


    OCR Scan     		HN1D03FU PDF

    sm2006

    Abstract: lu2b
    Text: TOSHIBA HN1D01FU TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE n n 1 F 11 h n i m m m 'm m mmr ULTRA HIGH SPEED SWITCHING APPLICATION. Unit in mm • Small Package • Low Forward Voltage • Fast Reverse Recovery Time : tr r = 1.6ns Typ. • Small Total Capacitance


    OCR Scan     		HN1D01FU 961001EA sm2006 lu2b PDF

    HN1D02FU

    Abstract: No abstract text available
    Text: TOSHIBA HN1D02FU TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H N 1 D02FU ULTRA HIGH SPEED SWITCHING APPLICATION. • • • • Unit in mm HN1D02FU is composed of 2 unit of cathode common. Low Forward Voltage : Vjr 3 = 0.90V (Typ.) Fast Reverse Recovery Time : trr= 1.6ns (Typ.)


    OCR Scan     		HN1D02FU N1D02FU HN1D02FU 961001EAA2' PDF