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    12V P-CHANNEL POWER MOSFET Search Results

    12V P-CHANNEL POWER MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    12V P-CHANNEL POWER MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RF1K49093

    Abstract: AN7254 AN9321 AN9322 MS-012AA RF1K4909396
    Text: RF1K49093 S E M I C O N D U C T O R 2.5A, 12V, Avalanche Rated, Logic Level, Dual P-Channel LittleFET Enhancement Mode Power MOSFET January 1997 Features Description • 2.5A, 12V The RF1K49093 Dual P-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI


    Original     		PDF RF1K49093 RF1K49093 1e-30 61e-4 09e-6) 10e-3 99e-6) 82e-3 47e-7) AN7254 AN9321 AN9322 MS-012AA RF1K4909396

    NS4160

    Abstract: Si4463DY 4463 SO-8 4463 SO8 MOSFET
    Text: Si4463DY P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged gate PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage 2.5V – 12V .


    Original     		PDF Si4463DY NS4160 4463 SO-8 4463 SO8 MOSFET

    4463 SO8 MOSFET

    Abstract: 4463 B
    Text: Si4463DY P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged gate PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage 2.5V – 12V .


    Original     		PDF Si4463DY 4463 SO8 MOSFET 4463 B

    UT3443

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT3443 Preliminary Power MOSFET P-CHANNEL 2.5-V G-S MOSFET „ DESCRIPTION The UTC UT3443 is a P-channel power MOSFET using UTC’s advanced trench technology to provide customers with a minimum on-state resistance and extremal low gate charge with a 12V gate


    Original     		PDF UT3443 UT3443 OT-26 UT3443L-AG6-R UT3443G-AG6-R QW-R502-557

    IRF7410

    Abstract: F7101 IRF7101 MS-012AA 12RD
    Text: PD - 94025 IRF7410 HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel VDSS RDS on max ID -12V 7mΩ@VGS = -4.5V -16A 9mΩ@VGS = -2.5V 13mΩ@VGS = -1.8V -13.6A -11.5A Description These P-Channel HEXFET® Power MOSFETs from


    Original     		PDF IRF7410 IRF7410 F7101 IRF7101 MS-012AA 12RD

    F7101

    Abstract: IRF7101 IRF7420 MS-012AA
    Text: PD - 94278 IRF7420 HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel VDSS RDS on max ID -12V 14mΩ@VGS = -4.5V -11.5A 17.5mΩ@VGS = -2.5V 26mΩ@VGS = -1.8V -9.8A -8.1A Description These P-Channel HEXFET® Power MOSFETs from


    Original     		PDF IRF7420 F7101 IRF7101 IRF7420 MS-012AA

    6x marking sot-23 p-channel

    Abstract: IRLMS4502 IRLMS6702
    Text: PD- 93759A IRLMS4502 HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel D 1 6 2 5 3 4 A D VDSS = -12V D G D S RDS on = 0.042Ω T o p V ie w Description These P-Channel MOSFETs from International Rectifier


    Original     		PDF 3759A IRLMS4502 OT-23. boaS4502 6x marking sot-23 p-channel IRLMS4502 IRLMS6702

    irlms4502

    Abstract: No abstract text available
    Text: PD- 93759 IRLMS4502 HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel D A D 1 6 2 5 3 4 VDSS = -12V D G D S RDS on = 0.042Ω T o p V ie w Description These P-Channel MOSFETs from International Rectifier


    Original     		PDF IRLMS4502 OT-23. irlms4502

    mosfet

    Abstract: EIA-541 IRLMS4502 IRLMS6702
    Text: PD- 93759B IRLMS4502 HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel D A D 1 6 2 5 3 4 VDSS = -12V D G D S RDS on = 0.042Ω Top View Description These P-Channel MOSFETs from International Rectifier


    Original     		PDF 93759B IRLMS4502 OT-23. mosfet EIA-541 IRLMS4502 IRLMS6702

    IRLML6401

    Abstract: marking code IRLML6401 IRLML2402 IRLML2803 IRLML5103 IRLML6302 IRLML6402 IRLML6302 marking
    Text: PD - 93756D IRLML6401 l l l l l l l Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching 1.8V Gate Rated HEXFET Power MOSFET G 1 VDSS = -12V 3 D S RDS(on) = 0.05Ω 2 Description These P-Channel MOSFETs from International Rectifier


    Original     		PDF 93756D IRLML6401 OT-23 EIA-481 EIA-541. IRLML6401 marking code IRLML6401 IRLML2402 IRLML2803 IRLML5103 IRLML6302 IRLML6402 IRLML6302 marking

    ml2803

    Abstract: IRLML2803 IRLML6401 43a sot23 Y1 SOT-23 IRLML6401 SOT-23 IRLML2402 IRLML2502 IRLML5103 IRLML6302
    Text: PD- 93756C IRLML6401 l l l l l l l Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching 1.8V Gate Rated HEXFET Power MOSFET G 1 VDSS = -12V 3 D S RDS(on) = 0.05Ω 2 Description These P-Channel MOSFETs from International Rectifier


    Original     		PDF 93756C IRLML6401 OT-23 EIA-481 EIA-541. ml2803 IRLML2803 IRLML6401 43a sot23 Y1 SOT-23 IRLML6401 SOT-23 IRLML2402 IRLML2502 IRLML5103 IRLML6302

    IRF7233

    Abstract: No abstract text available
    Text: PD- 91849D IRF7233 HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel A D S 1 8 S 2 7 D S 3 6 D G 4 5 D VDSS = -12V RDS on = 0.020Ω T op V ie w Description These P-Channel MOSFETs from International Rectifier


    Original     		PDF 91849D IRF7233 IRF7233

    IRF7210

    Abstract: No abstract text available
    Text: PD- 91844A IRF7210 HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel A D S 1 8 S 2 7 D S 3 6 D G 4 5 D VDSS = -12V RDS on = 0.007Ω T op V ie w Description These P-Channel MOSFETs from International Rectifier


    Original     		PDF 1844A IRF7210 IRF7210

    AAT4250

    Abstract: AAT4280 AAT4285 GRM21BR71C105KA01 SC70JW-8
    Text: AAT4285 12V Slew Rate Controlled Load Switch General Description Features The AAT4285 SmartSwitch is a P-channel MOSFET power switch designed for high-side load switching applications. The MOSFET operates from a 3.0V to 13.2V input range making it ideal for applications in


    Original     		PDF AAT4285 AAT4285 AAT4250 AAT4280 GRM21BR71C105KA01 SC70JW-8

    MOSFET 2301 SOT-23

    Abstract: 2301 marking sot-23 WTC2301
    Text: WTC2301 P-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 DRAIN -2.6 AMPERES P b Lead Pb -Free DRAIN SOURCE VOLTAGE -20 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <130mΩ@V GS =12V *Rugged and Reliable


    Original     		PDF WTC2301 OT-23 OT-23 12-May-05 MOSFET 2301 SOT-23 2301 marking sot-23 WTC2301

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA2206 MCH6353 P-Channel Power MOSFET -12V, -6.0A, 35mΩ, Single MCPH6 http://onsemi.com Features • On-resistance RDS on 1=29mΩ(typ.) • Halogen free compliance • 1.5V drive • Protection diode in Specifications Absolute Maximum Ratings at Ta = 25°C


    Original     		PDF ENA2206 MCH6353 1500mm A2206-6/6

    Untitled

    Abstract: No abstract text available
    Text: WTC2301 P-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 DRAIN -2.6 AMPERE S P b Lead Pb -Free DRAIN SOUR CE VOLTAGE -20 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <130mΩ@V GS =12V *Rugged and Reliable


    Original     		PDF WTC2301 OT-23 OT-23 12-May-05

    Untitled

    Abstract: No abstract text available
    Text: CSD23381F4 www.ti.com SLPS450 – OCTOBER 2013 12V, P-Channel NexFET Power MOSFETs Check for Samples: CSD23381F4 FEATURES . 1 • • • • 2 • • • • Ultra Low On Resistance Ultra Low Qg and Qgd High Operating Drain Current Ultra Small Footprint 0402 Case Size


    Original     		PDF CSD23381F4 SLPS450

    Untitled

    Abstract: No abstract text available
    Text: CSD23381F4 www.ti.com SLPS450 – OCTOBER 2013 12V, P-Channel NexFET Power MOSFETs Check for Samples: CSD23381F4 FEATURES . 1 • • • • 2 • • • • Ultra Low On Resistance Ultra Low Qg and Qgd High Operating Drain Current Ultra Small Footprint 0402 Case Size


    Original     		PDF CSD23381F4 SLPS450

    G6401

    Abstract: No abstract text available
    Text: Pb Free Plating Product CORPORATION G6401 P-CHANNEL ENHANCEMENT MODE POWER MOSFET ISSUED DATE :2005/01/17 REVISED DATE :2005/03/22B BVDSS RDS ON ID -12V 50m -4.3A Description The G6401 provides the designer with the best combination of fast switching, low on-resistance and


    Original     		PDF G6401 2005/03/22B G6401

    Untitled

    Abstract: No abstract text available
    Text: CSD23381F4 www.ti.com SLPS450 – OCTOBER 2013 12V, P-Channel NexFET Power MOSFETs Check for Samples: CSD23381F4 FEATURES . 1 • • • • 2 • • • • Ultra Low On Resistance Ultra Low Qg and Qgd High Operating Drain Current Ultra Small Footprint 0402 Case Size


    Original     		PDF CSD23381F4 SLPS450

    Untitled

    Abstract: No abstract text available
    Text: PD-91849D International IOR Rectifier IRF7233 HEXFET Power MOSFET • • • • Ultra Low O n-R esistance P-Channel M O SFET Surface Mount A vailable in Tape & Reel V dss = -12V RüS on = 0.020Q, Description These P-Channel MOSFETs from International Rectifier


    OCR Scan     		PDF PD-91849D IRF7233

    Untitled

    Abstract: No abstract text available
    Text: P D -93756 International 3BR Rectifier IRLML6401 HEXFET Power MOSFET • • • • • • Ultra Low O n-R esistance P-Channel M O SFET SO T-23 Footprint Low Profile <1.1 mm A vailable in Tape and Reel Fast Switching V Dss = -12V RüS(on) = 0.05Î2 Description


    OCR Scan     		PDF IRLML6401

    DU1230S

    Abstract: arco TRIMMER capacitor SEMCO
    Text: A te m m a n A M P com pany RF MOSFET Power Transistor, 30W, 12V 2 -175 MHz DU1230S V2.00 Features • • • • • • N-Channel Enhancem ent Mode Device DMOS Structure Lower Capacitances for Broadband O peration High Saturated O utput Power Lower Noise Figure Than Bipolar Devices


    OCR Scan     		PDF DU1230S 5-80pF 4-40pF 1000pF DU1230S arco TRIMMER capacitor SEMCO