Untitled
Abstract: No abstract text available
Text: OBSOLETE - PLEASE USE ZXTC6717MC ZXTDA1M832 MPPS Miniature Package Power Solutions DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR COMBINATION SUMMARY NPN Transistor PNP Transistor VCEO = 15V; RSAT = 45m ; C = 4.5A VCEO = -12V; RSAT = 60m ; C = -4A DESCRIPTION
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ZXTC6717MC
ZXTDA1M832
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Untitled
Abstract: No abstract text available
Text: NOT RECOMMENDED FOR NEW DESIGNS PLEASE USE ZXTPS717MC ZX3CD1S1M832 MPPS Miniature Package Power Solutions 12V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY PNP Transistor Schottky Diode VCEO =-12V; RSAT = 65m ; C = -4A
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ZXTPS717MC
ZX3CD1S1M832
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ZXTN07012EFF
Abstract: ZXTP07012EFF ZXTP07012EFFTA
Text: ZXTP07012EFF 12V, SOT23F, PNP medium power transistor Summary; BVCEO > -12V IC cont = -4A VCE(sat) < -75mV @ 1A RCE(sat) = 50m⍀ PD = 1.5W Complementary part number ZXTN07012EFF Description C This low voltage PNP transistor has been designed for applications
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ZXTP07012EFF
OT23F,
-75mV
ZXTN07012EFF
OT23F
OT23F
ZXTN07012EFF
ZXTP07012EFF
ZXTP07012EFFTA
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Untitled
Abstract: No abstract text available
Text: ZXTP07012EFF 12V, SOT23F, PNP medium power transistor Summary; BVCEO > -12V IC cont = -4A VCE(sat) < -75mV @ 1A RCE(sat) = 50m⍀ PD = 1.5W Complementary part number ZXTN07012EFF Description C This low voltage PNP transistor has been designed for applications
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ZXTP07012EFF
OT23F,
-75mV
ZXTN07012EFF
OT23F
OT23F
D-81541
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TS16949
Abstract: ZXTN07012EFF ZXTP07012EFF ZXTP07012EFFTA 2V150
Text: ZXTP07012EFF 12V, SOT23F, PNP medium power transistor Summary; BVCEO > -12V IC cont = -4A VCE(sat) < -75mV @ 1A RCE(sat) = 50m⍀ PD = 1.5W Complementary part number ZXTN07012EFF Description C This low voltage PNP transistor has been designed for applications
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ZXTP07012EFF
OT23F,
-75mV
ZXTN07012EFF
OT23F
OT23F
D-81541
TS16949
ZXTN07012EFF
ZXTP07012EFF
ZXTP07012EFFTA
2V150
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Untitled
Abstract: No abstract text available
Text: 2SB1732 / 2SB1709 Datasheet PNP -1.5A -12V Middle Power Transistor lOutline Parameter Value TUMT3 -12V -1.5A VCEO IC TSMT3 Collector Collector Base Base Emitter Emitter 2SB1709 SC-96 2SB1732 lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SD2702, 2SD2674
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2SB1732
2SB1709
SC-96)
2SB1732
2SD2702,
2SD2674
-500mA/
-25mA)
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marking DA1
Abstract: No abstract text available
Text: NOT RECOMMENDED FOR NEW DESIGNS PLEASE USE ZXTC6717MC ZXTDA1M832 MPPS Miniature Package Power Solutions DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR COMBINATION SUMMARY NPN Transistor PNP Transistor VCEO = 15V; RSAT = 45m ; C = 4.5A VCEO = -12V; RSAT = 60m ; C = -4A
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ZXTC6717MC
ZXTDA1M832
marking DA1
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Untitled
Abstract: No abstract text available
Text: OBSOLETE - PLEASE USE ZXTPS717MC ZX3CD1S1M832 MPPS Miniature Package Power Solutions 12V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY PNP Transistor Schottky Diode VCEO =-12V; RSAT = 65m ; C = -4A VR = 40V; VF = 500mV @1A ; IC=1A
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ZXTPS717MC
ZX3CD1S1M832
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DFN3020B-8
Abstract: diodes transistor marking k2 dual
Text: A Product Line of Diodes Incorporated ZXTPS717MC 12V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION Features and Benefits Mechanical Data PNP Transistor • BVCEO > -12V • IC = -4A Continuous Collector Current • Low Saturation Voltage -140mV max @ -1A
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ZXTPS717MC
-140mV
500mV
DFN3020B-8
DS31936
DFN3020B-8
diodes transistor marking k2 dual
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4420 Transistor
Abstract: transistor b 622 pnp transistor d 640 Schottky Diode 40V 5A ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC 0118 transistor High voltage fast switching power transistor pnp DSA003748
Text: ZXTS1000E6 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR AND SCHOTTKY DIODE SUMMARY Transistor: VCEO=-12V, I C= -1.25A Schottky Diode: VR=40V; IC= 0.5A DESCRIPTION A PNP transistor and a Schottky Barrier diode contained in a single 6 leaded SOT23 package.
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ZXTS1000E6
OT23-6
ZXTS1000E6TA
ZXTS1000E6TC
4420 Transistor
transistor b 622
pnp transistor d 640
Schottky Diode 40V 5A
ZXTS1000E6
ZXTS1000E6TA
ZXTS1000E6TC
0118 transistor
High voltage fast switching power transistor pnp
DSA003748
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXTPS717MC 12V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION Features and Benefits Mechanical Data PNP Transistor • BVCEO > -12V • IC = -4A Continuous Collector Current • Low Saturation Voltage -140mV max @ -1A
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ZXTPS717MC
-140mV
500mV
DFN3020B-8
DS31936
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4420 Transistor
Abstract: Schottky Diode 40V 5A Schottky diode Die IR ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC transistor MV sot23
Text: ZXTS1000E6 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR AND SCHOTTKY DIODE SUMMARY Transistor: VCEO=-12V, I C= -1.25A Schottky Diode: VR=40V; IC= 0.5A DESCRIPTION A PNP transistor and a Schottky Barrier diode contained in a single 6 leaded SOT23 package.
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ZXTS1000E6
OT23-6
ZXTS1000E6TA
ZXTS1000E6TC
4420 Transistor
Schottky Diode 40V 5A
Schottky diode Die IR
ZXTS1000E6
ZXTS1000E6TA
ZXTS1000E6TC
transistor MV sot23
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TS16949
Abstract: ZXTN25012EZ ZXTP25012EZ ZXTP25012EZTA
Text: ZXTP25012EZ 20V PNP high gain transistor in SOT89 Summary BVCEO > -12V hFE > 500 IC cont = 4.5A VCE(sat) < -70mV @ 1A RCE(sat) = 45m⍀ PD = 2.4W Complementary part number ZXTN25012EZ Description C Packaged in the SOT89 outline this new low saturation 12V PNP
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ZXTP25012EZ
-70mV
ZXTN25012EZ
D-81541
TS16949
ZXTN25012EZ
ZXTP25012EZ
ZXTP25012EZTA
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marking 8A sot223
Abstract: sot223 transistor pinout transistor pnp 12V 1A Continuous Current Peak FZT717 FZT717TA 12v pnp transistor zetex 320
Text: FZT717 SOT223 PNP medium power transistor Summary BVCEO = -12V; IC = 3A Description Packaged in the SOT223 outline this low saturation 12V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions.
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FZT717
OT223
FZT717TA
marking 8A sot223
sot223 transistor pinout
transistor pnp 12V 1A Continuous Current Peak
FZT717
FZT717TA
12v pnp transistor
zetex 320
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DFN3020B-8
Abstract: ZXTPS717MC DS3193
Text: A Product Line of Diodes Incorporated ZXTPS717MC 12V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL Features Mechanical Data • • • • • • • • • • • • • • • PNP Transistor • VCEO = -12V • RSAT = 65mΩ
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ZXTPS717MC
500mv
-140mV
DFN3020B-8
J-STD-020
DS31936
DFN3020B-8
ZXTPS717MC
DS3193
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MLP832
Abstract: ZX3CD1S1M832 ZX3CD1S1M832TA ZX3CD1S1M832TC 0001M10
Text: ZX3CD1S1M832 MPPS Miniature Package Power Solutions 12V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY PNP Transistor Schottky Diode VCEO =-12V; RSAT = 65m ; C = -4A VR = 40V; VF = 500mV @1A ; IC=1A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP this combination dual
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ZX3CD1S1M832
500mV
MLP832
ZX3CD1S1M832
ZX3CD1S1M832TA
ZX3CD1S1M832TC
0001M10
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MLP832
Abstract: ZX3CD1S1M832 ZX3CD1S1M832TA ZX3CD1S1M832TC
Text: ZX3CD1S1M832 MPPS Miniature Package Power Solutions 12V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY PNP Transistor Schottky Diode VCEO =-12V; RSAT = 65m ; C = -4A VR = 40V; VF = 500mV @1A ; IC=1A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP this combination dual
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ZX3CD1S1M832
500mV
MLP832
ZX3CD1S1M832
ZX3CD1S1M832TA
ZX3CD1S1M832TC
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Untitled
Abstract: No abstract text available
Text: 2SA2030 / 2SA2018 / 2SA2119K Datasheet PNP -500mA -12V Low Frequency Amplifier Transistors lOutline Parameter Value VCEO IC -12V -500mA VMT3 EMT3 Collector Collector Base Base Emitter Emitter 2SA2030 SC-105AA lFeatures 1) A Collecotr current is large.General Purpose.
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2SA2030
2SA2018
2SA2119K
-500mA
-500mA
2SA2030
SC-105AA)
250mV
-200mA,
-10mA
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ZXT10P12DE6
Abstract: ZXT10P12DE6TA ZXT10P12DE6TC Marking 717 DSA0037437
Text: ZXT10P12DE6 SuperSOT 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-12V; RSAT = 65m ; IC= -3A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give
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ZXT10P12DE6
OT23-6
OT23-6
ZXT10P12DE6
ZXT10P12DE6TA
ZXT10P12DE6TC
Marking 717
DSA0037437
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P12D
Abstract: P12D marking ZXT13P12DE6 ZXT13P12DE6TA ZXT13P12DE6TC marking p12d DSA0037465
Text: ZXT13P12DE6 SuperSOT4 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-12V; RSAT = 37m ; IC= -4A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give
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ZXT13P12DE6
OT23-6
OT23-6
P12D
P12D marking
ZXT13P12DE6
ZXT13P12DE6TA
ZXT13P12DE6TC
marking p12d
DSA0037465
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T14P12DX
Abstract: MO-187 ZXT14P12DX ZXT14P12DXTA ZXT14P12DXTC DSA003747
Text: ZXT14P12DX SuperSOT4 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-12V; RSAT = 16m ; IC= -6A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give
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ZXT14P12DX
ZXT14P12DXTA
T14P12DX
MO-187
ZXT14P12DX
ZXT14P12DXTA
ZXT14P12DXTC
DSA003747
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Untitled
Abstract: No abstract text available
Text: ZXT13P12DE6 SuperSOT4 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-12V; RSAT = 37m ; IC= -4A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give
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ZXT13P12DE6
OT23-6
OT23-6
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MO-187
Abstract: ZXT12P12DX ZXT12P12DXTA ZXT12P12DXTC t12p12dx DSA0037452
Text: ZXT12P12DX SuperSOT4 DUAL 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-12V; RSAT = 47m ; IC= -3A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give
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ZXT12P12DX
MO-187
ZXT12P12DX
ZXT12P12DXTA
ZXT12P12DXTC
t12p12dx
DSA0037452
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TS16949
Abstract: ZXTN25012EFH ZXTP25012EFH ZXTP25012EFHTA
Text: ZXTP25012EFH 12V, SOT23, PNP medium power transistor Summary BVCEO > -12V hFE > 500 IC cont = 4A RCE(sat) = 40m⍀ VCE(sat) < -65mV @ 1A PD = 1.25W Complementary part number ZXTN25012EFH Description C Advanced process capability and package design have been used to
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ZXTP25012EFH
-65mV
ZXTN25012EFH
D-81541
TS16949
ZXTN25012EFH
ZXTP25012EFH
ZXTP25012EFHTA
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