Untitled
Abstract: No abstract text available
Text: FGPF50N30T tm 300V, 50A PDP IGBT Features General Description • High current capability • Low saturation voltage: VCE sat =1.4V @ IC = 30A • High input impedance Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.
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FGPF50N30T
O-220F
FGPF50N30T
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IGBT 40A
Abstract: igbt 300V 70A FGA70N30T FGA70N30TTU
Text: FGA70N30T 300V, 70A PDP IGBT tm Features General Description • High current capability Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.
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FGA70N30T
FGA70N30T
IGBT 40A
igbt 300V 70A
FGA70N30TTU
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igbt 200v 30a
Abstract: FGPF50N30T FGPF50N30TTU
Text: FGPF50N30T tm 300V, 50A PDP IGBT Features General Description • High current capability Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.
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FGPF50N30T
O-220F
FGPF50N30T
igbt 200v 30a
FGPF50N30TTU
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igbt 300V 10A datasheet
Abstract: FGPF30N30TTU
Text: FGPF30N30T tm 300V, 30A PDP Trench IGBT Features General Description • High current capability Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.
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FGPF30N30T
O-220F
FGPF30N30T
igbt 300V 10A datasheet
FGPF30N30TTU
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igbt 300V 30A
Abstract: igbt 300V 10A datasheet FGPF30N30TD igbt 200v 20a
Text: FGPF30N30TD tm 300V, 30A PDP Trench IGBT Features General Description • High current capability Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.
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FGPF30N30TD
O-220F
FGPF30N30TD
igbt 300V 30A
igbt 300V 10A datasheet
igbt 200v 20a
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FGA70N30TD
Abstract: No abstract text available
Text: FGA70N30TD 300V, 70A PDP IGBT tm Features General Description • High current capability Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.
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FGA70N30TD
FGA70N30TD
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FGPF70N30T
Abstract: igbt 200v 20a transistor* igbt 70A 300 V FGPF70N30TTU
Text: FGPF70N30T 300V, 70A PDP IGBT tm Features General Description • High current capability Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.
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FGPF70N30T
O-220F
FGPF70N30T
igbt 200v 20a
transistor* igbt 70A 300 V
FGPF70N30TTU
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FGPF70N30TD
Abstract: igbt 300V 10A datasheet
Text: FGPF70N30TD 300V, 70A PDP IGBT tm Features General Description • High current capability Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.
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FGPF70N30TD
O-220F
FGPF70N30TD
igbt 300V 10A datasheet
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD BU941Z NPN SILICON TRANSISTOR NPN POWER DARLINGTON HIGH VOLTAGE IGNITION COIL DRIVER FEATURES * NPN Darlington * Integrated antiparallel collector-emitter diode APPLICATIONS * High ruggedness electric ignitions INTERNAL SCHEMATIC DIAGRAM
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BU941Z
BU941ZL-T3P-T
BU941ZG-T3P-T
BU941ZL-TA3-T
BU941ZG-TA3-T
O-220
QW-R214-022.
QW-R214-022
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD BU941Z NPN SILICON TRANSISTOR NPN POWER DARLINGTON HIGH VOLTAGE IGNITION COIL DRIVER FEATURES * NPN Darlington * Integrated antiparallel collector-emitter diode APPLICATIONS * High ruggedness electric ignitions INTERNAL SCHEMATIC DIAGRAM
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BU941Z
BU941ZL-T3P-T
BU941ZG-T3P-T
BU941ZL-TA3-T
BU941ZG-TA3-T
O-220
BU941ZL-TQ2-T
BU941ZG-TQ2-T
O-263
BU941ZL-TQ2-R
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD BU941Z NPN SILICON TRANSISTOR NPN POWER DARLINGTON HIGH VOLTAGE IGNITION COIL DRIVER FEATURES * NPN Darlington * Integrated antiparallel collector-emitter diode APPLICATIONS * High ruggedness electric ignitions INTERNAL SCHEMATIC DIAGRAM
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BU941Z
BU941ZL-T3P-T
BU941ZG-T3P-T
BU941ZL-TA3-T
BU941ZG-TA3-T
BU941ZL-TQ2-T
BU941ZG-TQ2-T
BU941ZL-TQ2-R
BU941ZG-TQ2-R
O-220
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Untitled
Abstract: No abstract text available
Text: FQB9N30 / FQI9N30 May 2000 QFET TM FQB9N30 / FQI9N30 300V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
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FQB9N30
FQI9N30
FQI9N30TU
O-262
FQI9N30
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Untitled
Abstract: No abstract text available
Text: FQB9N30 / FQI9N30 May 2000 QFET TM FQB9N30 / FQI9N30 300V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
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FQB9N30
FQI9N30
FQB9N30TM
O-263
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Untitled
Abstract: No abstract text available
Text: Automation Controls Catalog 1a 8A, 1a1b/2a 5A small polarized power relays RoHS compliant Protective construction: Sealed type 3. High sensitivity Using the same type of highperformance polar magnetic circuits as DS relays, by matching the spring load to the magnetic force of attraction,
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ASCTB266E
201402-T
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HV9910B dc to dc converter 12v design
Abstract: 300V dc to dc buck converter circuit diagram of .5 watt led driver for 12v dc h48 diode AC 12V to DC 12 V with Bridge Diode Diagram half bridge converter 80V output 15A 300V dc dc STEP DOWN DC DC converter 1A 400V TO 220 Package diode H48 hv9910b
Text: AN-H48 Application Note Buck-based LED Drivers Using the HV9910B Fundamental Buck Converter topology is an excellent choice for LED drivers in off-line as well as low-voltage applications as it can produce a constant LED current at very high efficiencies and low cost. A peak-current-controlled buck
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AN-H48
HV9910B
HV9910B
HV9910B dc to dc converter 12v design
300V dc to dc buck converter
circuit diagram of .5 watt led driver for 12v dc
h48 diode
AC 12V to DC 12 V with Bridge Diode Diagram
half bridge converter 80V output 15A
300V dc dc STEP DOWN
DC DC converter 1A 400V TO 220 Package
diode H48
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IPC-2221
Abstract: flyback transformer philips transformer pulse 6 pin 500v Philips Electrolytic Capacitor 150uF Flyback Transformers SANYO flyback transformer sanyo output capacitor charging flyback 10 pin flyback transformer PHILIPS TDK Pulse Transformers LT3750
Text: L DESIGN FEATURES Tiny Controller Makes It Easy to by David Ng Charge Large Capacitors Introduction Emergency warning beacons, inventory control scanners, professional photoflash and many other systems operate by delivering a pulse of energy to a transducer. This energy typically
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LT3750
LTC4011
IPC-2221
flyback transformer philips
transformer pulse 6 pin 500v
Philips Electrolytic Capacitor 150uF
Flyback Transformers SANYO
flyback transformer sanyo
output capacitor charging flyback
10 pin flyback transformer PHILIPS
TDK Pulse Transformers
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in5231
Abstract: driver piezo print heads inkjet print head interface ic a 2231 piezo print head inkjet print head driver HV507 IN4002 voltage direction piezo head of inkjet IN5245
Text: AN-H20 Application Note HVCMOS Drivers for Non-Impact Printing This article discusses the use of monolithic high voltage ICs for non-impact printing and plotting applications. Supertex’s HVCMOS process technology allows combining low voltage logic as well as high voltage DMOS outputs up to 400V on
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AN-H20
in5231
driver piezo print heads
inkjet print head interface
ic a 2231
piezo print head
inkjet print head driver
HV507
IN4002 voltage direction
piezo head of inkjet
IN5245
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MBM400GR6
Abstract: PDE-M400GR6-0 Hitachi DSA0047 99016
Text: Spec. No. IGBT-SP-99016 R1 Hitachi IGBT Module / Silicon N-Channel IGBT MBM400GR6 [Rated 400A/600V, Dual-pack type] FEATURES OUTLINE DRAWING • Low saturation voltage and high speed. · Low turn-OFF switching loss. · Low noise due to build-in free-wheeling diode.
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IGBT-SP-99016
MBM400GR6
00A/600V,
MBM400GR6
PDE-M400GR6-0
Hitachi DSA0047
99016
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YAZAKI 7282-1020
Abstract: YAZAKI 7283 VARISTOR znr YAZAKI relay YAZAKI Terminal varistor 400V YAZAKI Terminal 7282-1020 YAZAKI 7283-1020 connector yazaki 7283 yazaki
Text: EV AEV Capsule contact Mechanism and High-capacity Cut-off Compact Relay 10A 20A 80A 120A EV RELAYS (AEV) FEATURES TYPICAL APPLICATIONS 1. Compact and lightweight Charged with hydrogen gas for high arc cooling capacity, short gap cutoff has been achieved at high DC voltages.
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C2809-1992.
270711D
YAZAKI 7282-1020
YAZAKI 7283
VARISTOR znr
YAZAKI relay
YAZAKI Terminal
varistor 400V
YAZAKI Terminal 7282-1020
YAZAKI 7283-1020
connector yazaki
7283 yazaki
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mosfet equivalent fda 59 n 30
Abstract: FDA59N30
Text: TM FDA59N30 300V N-Channel MOSFET Features Description • 59A, 300V, RDS on = 0.056Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 77 nC)
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FDA59N30
FDA59N30
mosfet equivalent fda 59 n 30
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mosfet equivalent fda 59 n 30
Abstract: MOSFET 300V FDA59N30 mosfet fda 59 n 30
Text: TM FDA59N30 300V N-Channel MOSFET Features Description • 59A, 300V, RDS on = 0.056Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 77 nC)
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FDA59N30
FDA59N30
mosfet equivalent fda 59 n 30
MOSFET 300V
mosfet fda 59 n 30
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FDP46N30
Abstract: MOSFET 300V N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V
Text: UniFET TM FDP46N30 300V N-Channel MOSFET Features Description • 46A, 300V, RDS on = 0.079Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge (typical 58 nC)
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FDP46N30
O-220
FDP46N30
MOSFET 300V
N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V
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Untitled
Abstract: No abstract text available
Text: UniFET TM FDP46N30 300V N-Channel MOSFET Features Description • 46A, 300V, RDS on = 0.079Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge (typical 58 nC)
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FDP46N30
FDP46N30
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48V to 300V dc dc converter
Abstract: 12v to 300v dc-dc using 5V to 300V dc dc converter
Text: rZ J ^7# SGS-THOMSON GS70/100T300 Family 70W/100W DC-DC CONVERTERS FAMILY Type Vi Vo lo G S70T300-3.5 200 to 400 V 3,5 V 20 A G S100T300-5 200 to 400 V 5,2 V 20 A G S 100T300-12 200 to 400 V 12,0 V 8,3 A GS1 00T300-1 5 200 to 400 V 15,0 V 6,6 A GS1 00T300-24
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S70T300-3
S100T300-5
GS70/100T300
0W/100W
100T300-12
00T300-1
00T300-24
GS100T300-48
400Vdc
GS100T300-5
48V to 300V dc dc converter
12v to 300v dc-dc using
5V to 300V dc dc converter
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