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    13 MHZ MOSFET Search Results

    13 MHZ MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    13 MHZ MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CCD133ADC

    Abstract: ccd133 CCD133A fairchild ccd "Linear image sensor" CCD143A linear ccd radiation fairchild
    Text: CCD133A 1024-Element High Speed Linear Image Sensor FEATURES • • • • • • • • • • 1024 x 1 photosite array 13µm x 13µm photosites on 13µm pitch High speed: up to 20 MHz data rate Enhanced spectral response Low dark signal High responsivity


    Original     		PDF CCD133A 1024-Element 1024-photoelement CCD133A CCD133ADC ccd133 fairchild ccd "Linear image sensor" CCD143A linear ccd radiation fairchild

    CCD153

    Abstract: CCD153ADC ccd133 fairchild ccd water surface level element Fairchild Imaging CCD Contact image sensor fairchild CCD153A
    Text: CCD 153A 512-Element High Speed Linear Image Sensor FEATURES • • • • • • • • • • 512 x 1 photosite array 13µm x 13µm photosites on 13µm pitch High speed: up to 20 MHz data rate Enhanced spectral response Low dark signal High responsivity


    Original     		PDF 512-Element CCD153A 512-photoelement CCD153 CCD153ADC ccd133 fairchild ccd water surface level element Fairchild Imaging CCD Contact image sensor fairchild

    NEC 9001

    Abstract: 2SK2597 J549 NEC MOSFET PUSHPULL
    Text: PRELIMINARY DATA SHEET SILICON POWER MOS FIELD EFFECT TRANSISTOR 2SK2597 N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION PACKAGE DRAWING Unit: mm • High output, high gain PO = 100 W, GL = 13 dB (TYP.) (f = 900 MHz)


    Original     		PDF 2SK2597 800-MHz NEC 9001 2SK2597 J549 NEC MOSFET PUSHPULL

    ccd133

    Abstract: CCD133ADC ccd board Circuit Schematic Diagram Electronic linear ccd radiation fairchild CCD143A CCD133A Fairchild Imaging CCD133DB ccd143 CCD Linear Image Sensor
    Text: CCD 133A 1024-Element High Speed Linear Image Sensor FEATURES • • • • • • • • • • 1024 x 1 photosite array µm pitch 13 µm x 13 µm photosites on 13µ High speed: up to 20 MHz data rate Enhanced spectral response Low dark signal High responsivity


    Original     		PDF 1024-Element CCD133A 1024-photoelement 133DC ccd133 CCD133ADC ccd board Circuit Schematic Diagram Electronic linear ccd radiation fairchild CCD143A Fairchild Imaging CCD133DB ccd143 CCD Linear Image Sensor

    SD2903

    Abstract: No abstract text available
    Text: SD2903 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • ■ ■ ■ ■ ■ ■ ■ GOLD METALLIZATION 2 - 500 MHz 30 WATTS 28 VOLTS 13 dB MIN. AT 400 MHz CLASS A OR AB OPERATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION, PUSH-PULL DESCRIPTION


    Original     		PDF SD2903 SD2903

    variable capacitor

    Abstract: 10uF 63V Electrolytic Capacitor Arco 423 arco 462 capacitor 2943666661 423 variable capacitor capacitor 10uF arco 463 10uf 63v capacitor 462 variable capacitor
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS4280 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS Features • • • • • 2 - 400 MHz 30 WATTS 28 VOLTS 13 dB MIN. AT 150 MHz CLASS A OR AB DESCRIPTION:


    Original     		PDF MS4280 MS4280 100pF 180pF 100pF, variable capacitor 10uF 63V Electrolytic Capacitor Arco 423 arco 462 capacitor 2943666661 423 variable capacitor capacitor 10uF arco 463 10uf 63v capacitor 462 variable capacitor

    30pf variable capacitor

    Abstract: VARIABLE capacitor arco 463 capacitor 10uF/63V MS4080 2943666661 arco 10uf 63v capacitor .5PF Electrolytic capacitor 180PF
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS4080 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS Features • • • • • 2 - 400 MHz 15 WATTS 28 VOLTS 13 dB MIN. AT 150 MHz CLASS A OR AB DESCRIPTION:


    Original     		PDF MS4080 MS4080 180pF 100pF, 100pF 206nH 30pf variable capacitor VARIABLE capacitor arco 463 capacitor 10uF/63V 2943666661 arco 10uf 63v capacitor .5PF Electrolytic capacitor

    SD2903

    Abstract: Dow Corning 140 M229
    Text: SD2903  RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • ■ ■ ■ ■ ■ ■ ■ GOLD METALLIZATION 2 - 500 MHz 30 WATTS 28 VOLTS 13 dB MIN. AT 400 MHz CLASS A OR AB OPERATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION, PUSH-PULL DESCRIPTION


    Original     		PDF SD2903 SD2903 Dow Corning 140 M229

    mosfet HF amplifier

    Abstract: SD1905
    Text: SD1905 HF/VHF POWER MOSFET N-Channel Enhancement Mode DESCRIPTION: The ASI SD1905 is Designed for General Purpose Class-A,B Power Amplifier Applications up to 200 MHz. PACKAGE STYLE .380 4L FLG B FEATURES: .112 x 45° A S • PG = 13 dB Typical at 200 MHz


    Original     		PDF SD1905 SD1905 mosfet HF amplifier

    Untitled

    Abstract: No abstract text available
    Text: SD2903 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • ■ ■ ■ ■ ■ ■ ■ GOLD METALLIZATION 2 - 500 MHz 30 WATTS 28 VOLTS 13 dB MIN. AT 400 MHz CLASS A OR AB OPERATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION, PUSH-PULL DESCRIPTION


    Original     		PDF SD2903 SD2903

    Untitled

    Abstract: No abstract text available
    Text: DB-960-90W 90W / 26V / 925-960 MHz PA using 2x PD57060S The LdmosST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 90 W min. with 13 dB gain over 925-960 MHz • 10:1 LOAD VSWR CAPABILITY


    Original     		PDF DB-960-90W PD57060S DB-960-90W

    SD2903

    Abstract: No abstract text available
    Text: SD2903 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS . . . PRELIMINARY DATA 2 - 500 MHz 30 WATTS 28 VOLTS 13 dB MIN. AT 400 MHz CLASS A OR AB .230 x .360 4L FL M229 ORDER CODE BRANDING SD2903 SD2903 DESCRIPTION The SD2903 is a gold metallized N-channel MOS


    Original     		PDF SD2903 SD2903

    PD57060s

    Abstract: ATC100B DB-960-90W 930 diode smd C07 smd 6 pin TRANSISTOR SMD CODE te
    Text: DB-960-90W 90W / 26V / 925-960 MHz PA using 2x PD57060S The LdmosST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 90 W min. with 13 dB gain over 925-960 MHz • 10:1 LOAD VSWR CAPABILITY


    Original     		PDF DB-960-90W PD57060S DB-960-90W PD57060s ATC100B 930 diode smd C07 smd 6 pin TRANSISTOR SMD CODE te

    tekelec 630

    Abstract: AT27273 00-CHA-101 501 CHB SPECIFICATIONS tekelec VJ1206Y104KXAT 501-CHB-8R2 Tekelec TA 501 CHB diod cms
    Text: DB-960-60W 60W / 26V / 925-960 MHz PA using 1x PD57070S The LdmosST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 60 W min. with 13 dB gain over 925 - 960 MHz • 10:1 LOAD VSWR CAPABILITY


    Original     		PDF DB-960-60W PD57070S DB-960-60W tekelec 630 AT27273 00-CHA-101 501 CHB SPECIFICATIONS tekelec VJ1206Y104KXAT 501-CHB-8R2 Tekelec TA 501 CHB diod cms

    ATC100B

    Abstract: PD57045S DB-960-70W SUBSTRATE TEFLON-GLASS Er 2.55 SMD Transistor 30w ED135
    Text: DB-960-70W 70W / 26V / 925-960 MHz PA using 2x PD57045S The LdmosST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 70 W min. with 13 dB gain over 925-960 MHz • 10:1 LOAD VSWR CAPABILITY


    Original     		PDF DB-960-70W PD57045S DB-960-70W ATC100B PD57045S SUBSTRATE TEFLON-GLASS Er 2.55 SMD Transistor 30w ED135

    DB-900-60W

    Abstract: PD57070S
    Text: DB-900-60W 60W / 26V / 869-894 MHz PA using 1x PD57070S The LdmosST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 60 W min. with 13 dB gain over 869 - 894 MHz • 10:1 LOAD VSWR CAPABILITY


    Original     		PDF DB-900-60W PD57070S DB-900-60W IS-54/-136 IS-95 PD57070S

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET SILICON POWER MOS FIELD EFFECT TRANSISTOR NEM0995F06-30 N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION FEATURES PACKAGE DRAWING Unit: mm High output, High gain Po = 100 W, GL = 13 dB (TYP.) (f = 900 MHz)


    OCR Scan     		PDF NEM0995F06-30

    NEC 9001

    Abstract: NEC MOSFET PUSHPULL EM0995F06-30
    Text: PRELIMINARY DATA SHEET SILICON POWER MOS FIELD EFFECT TRANSISTOR NEM0995F06-30 N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION FEATURES • PACKAGE DRAWING Unit: mm High output, High gain Po = 100 W, GL = 13 dB (TYP.) (f = 900 MHz)


    OCR Scan     		PDF NEM0995F06-30 NEC 9001 NEC MOSFET PUSHPULL EM0995F06-30

    VARIABLE capacitor

    Abstract: arco 462 capacitor 2943666661
    Text: • m m RF Products m Micmsemi Progress Powered by Technology 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS Featuies 2 - 400 MHz 30 WATTS 28 VOLTS 13 dB MIN. AT 150 MHz


    OCR Scan     		PDF MS4280 206nH 206nH 150MHz MSC0894 VARIABLE capacitor arco 462 capacitor 2943666661

    5 - 30pf variable capacitor

    Abstract: variable capacitor
    Text: Micmsemi • m m RF Products m 140 COMMERCE DRIVE Progress Powered by Technology MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS Featuies 2 - 400 MHz 15 WATTS 28 VOLTS 13 dB MIN. AT 150 MHz


    OCR Scan     		PDF MS4080 Curr25" 206nH 206nH 150MHz MSC0891 5 - 30pf variable capacitor variable capacitor

    Arco 423

    Abstract: VARIABLE capacitor arco 462 capacitor
    Text: • m m RF Products m Micmsemi Progress Powered by Technology 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS Featuies 2 - 400 MHz 30 WATTS 28 VOLTS 13 dB MIN. AT 150 MHz


    OCR Scan     		PDF MS4280 206nH 206nH 150MHz MSC0894 Arco 423 VARIABLE capacitor arco 462 capacitor

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET SILICON POWER MOS FIELD EFFECT TRANSISTOR 2SK2597 N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION FEATURES • • • PACKAGE DRAWING Unit: mm High output, high gain Po = 100 W, G l = 13 dB (TYP.) (f = 900 MHz)


    OCR Scan     		PDF 2SK2597 800-M

    5 - 30pf variable capacitor

    Abstract: variable capacitor 30pf variable capacitor
    Text: Micmsemi • m m RF Products m 140 COMMERCE DRIVE Progress Powered by Technology MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS Featuies 2 - 400 MHz 15 WATTS 28 VOLTS 13 dB MIN. AT 150 MHz


    OCR Scan     		PDF MS4080 Current25" 206nH 206nH 150MHz MSC0891 5 - 30pf variable capacitor variable capacitor 30pf variable capacitor

    NEC MOSFET PUSHPULL

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET SILICON POWER MOS FIELD EFFECT TRANSISTOR 2SK2597 N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION FEATURES • PACKAGE DRAWING Unit: mm • • • High output, high gain Po = 100 W, G l = 13 dB (TYP.) (f = 900 MHz)


    OCR Scan     		PDF 2SK2597 800-MHz NEC MOSFET PUSHPULL