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    130 ELECTRONIC MH BALLAST Search Results

    130 ELECTRONIC MH BALLAST Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation
    TCKE800NA Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Auto-retry, WSON10B Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    130 ELECTRONIC MH BALLAST Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ELECTRONIC BALLAST 150 W HID DIAGRAM

    Abstract: CDM 4 Philips ELECTRONIC BALLAST 70 W HID DIAGRAM 70W hid ballast ELECTRONIC BALLAST 400 W HID DIAGRAM metal halide electronic ballast circuit advantages of earth leakage circuit breaker ELECTRONIC BALLAST 70 W HID HID 35W TBA marking
    Text: NEW HID-PrimaVision electronic ballasts NEW for CDM 35, 70 and 150W lamps Definition Compact, one-piece, electronic ballast for built-in /S or /P or stand-alone (/I) applications with low wattage ceramic metal halide lamps. Description Lamp advantages • In practical applications HID-PV


    Original     		PDF 035/S 070/S 035/S 035/I 035/P 235/S 235/P 235/I ELECTRONIC BALLAST 150 W HID DIAGRAM CDM 4 Philips ELECTRONIC BALLAST 70 W HID DIAGRAM 70W hid ballast ELECTRONIC BALLAST 400 W HID DIAGRAM metal halide electronic ballast circuit advantages of earth leakage circuit breaker ELECTRONIC BALLAST 70 W HID HID 35W TBA marking

    STBV45

    Abstract: No abstract text available
    Text: STBV45  HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ MEDIUM VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED APPLICATIONS: ■ ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING


    Original     		PDF STBV45 STBV45

    Untitled

    Abstract: No abstract text available
    Text: STBV45  HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ MEDIUM VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED APPLICATIONS: ■ ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING


    Original     		PDF STBV45 STBV45

    1N5761

    Abstract: npn BUL45G bul45a
    Text: BUL45G NPN Silicon Power Transistor High Voltage SWITCHMODE Series Designed for use in electronic ballast light ballast and in SWITCHMODE Power supplies up to 50 W. Features • Improved Efficiency Due to: Low Base Drive Requirements (High and Flat DC Current Gain hFE)


    Original     		PDF BUL45G BUL45/D 1N5761 npn BUL45G bul45a

    bul45g

    Abstract: No abstract text available
    Text: BUL45G NPN Silicon Power Transistor High Voltage SWITCHMODE Series Designed for use in electronic ballast light ballast and in SWITCHMODE Power supplies up to 50 W. Features • Improved Efficiency Due to: Low Base Drive Requirements (High and Flat DC Current Gain hFE)


    Original     		PDF BUL45G O-220AB 21A-09 BUL45/D bul45g

    MJE18002G

    Abstract: MJE18002 MJE210 MPF930 MTP12N10 MTP8P10 MUR105
    Text: MJE18002G SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE18002G have an applications specific state−of−the−art die designed for use in 220 V line operated Switchmode Power supplies and electronic light ballasts.


    Original     		PDF MJE18002G MJE18002G O-220 O-220AB 21A-09 MJE18002/D MJE18002 MJE210 MPF930 MTP12N10 MTP8P10 MUR105

    BUL44

    Abstract: BUL44G MJE210 MPF930 MTP12N10 MTP8P10 MUR105
    Text: BUL44G SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The BUL44G have an applications specific state−of−the−art die designed for use in 220 V line operated Switchmode Power supplies and electronic light ballasts. Features


    Original     		PDF BUL44G BUL44G O-220AB 21A-09 BUL44/D BUL44 MJE210 MPF930 MTP12N10 MTP8P10 MUR105

    MJE18002

    Abstract: MJE18002G MJE210 MPF930 MTP12N10 MTP8P10 MUR105
    Text: MJE18002 Preferred Device SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE18002 have an applications specific state−of−the−art die designed for use in 220 V line operated Switchmode Power supplies and electronic light ballasts.


    Original     		PDF MJE18002 MJE18002 O-220 MJE18002/D MJE18002G MJE210 MPF930 MTP12N10 MTP8P10 MUR105

    BUL44

    Abstract: BUL44G MJE210 MPF930 MTP12N10 MTP8P10 MUR105
    Text: BUL44 SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The BUL44 have an applications specific state−of−the−art die designed for use in 220 V line operated Switchmode Power supplies and electronic light ballasts. Features


    Original     		PDF BUL44 BUL44 BUL44/D BUL44G MJE210 MPF930 MTP12N10 MTP8P10 MUR105

    Untitled

    Abstract: No abstract text available
    Text: BUL44G SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The BUL44G have an applications specific state−of−the−art die designed for use in 220 V line operated Switchmode Power supplies and electronic light ballasts. Features


    Original     		PDF BUL44G BUL44G 220AB BUL44/D

    Untitled

    Abstract: No abstract text available
    Text: MJE18002G SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE18002G have an applications specific state−of−the−art die designed for use in 220 V line operated Switchmode Power supplies and electronic light ballasts.


    Original     		PDF MJE18002G MJE18002G 220AB MJE18002/D

    B82733F2901B001

    Abstract: B82733F2172A001 B82733F2222A001 B82733F2292A001 B82733F2112B001 B82733F2701B001 B82733F2192B001
    Text: Chokes for Power Lines Series/Type: B82733F The following products presented in this data sheet are being withdrawn. Ordering Code Substitute Product Date of Withdrawal B82733F2751A001 B82733F2701B001 2006-06-09 B82733F2951A001 B82733F2901B001 2006-06-09 B82733F2122A001


    Original     		PDF B82733F B82733F2751A001 B82733F2701B001 B82733F2951A001 B82733F2901B001 B82733F2122A001 B82733F2112B001 B82733F2142A001 B82733F2122B001 B82733F2172A001 B82733F2901B001 B82733F2172A001 B82733F2222A001 B82733F2292A001 B82733F2112B001 B82733F2701B001 B82733F2192B001

    1N5761

    Abstract: marking code t1a BUL45 BUL45G MJE210 MPF930 MTP12N10 MTP8P10 MUR105 MUR150
    Text: BUL45 NPN Silicon Power Transistor High Voltage SWITCHMODEt Series Designed for use in electronic ballast light ballast and in Switchmode Power supplies up to 50 Watts. Features • Improved Efficiency Due to: ♦ Low Base Drive Requirements (High and Flat DC Current Gain hFE)


    Original     		PDF BUL45 O-220AB 21A-09 BUL45/D 1N5761 marking code t1a BUL45 BUL45G MJE210 MPF930 MTP12N10 MTP8P10 MUR105 MUR150

    1N5761

    Abstract: toroid FT10 BUL45G BUL45 marking code t1a MUR150 MJE210 MPF930 MTP12N10 MTP8P10
    Text: BUL45G NPN Silicon Power Transistor High Voltage SWITCHMODEt Series Designed for use in electronic ballast light ballast and in Switchmode Power supplies up to 50 Watts. Features • Improved Efficiency Due to: Low Base Drive Requirements (High and Flat DC Current Gain hFE)


    Original     		PDF BUL45G O-220AB 21A-09 BUL45/D 1N5761 toroid FT10 BUL45G BUL45 marking code t1a MUR150 MJE210 MPF930 MTP12N10 MTP8P10

    MJE18006G

    Abstract: MJE18006 MJE210 MPF930 MTP12N10 MTP8P10 MUR105
    Text: MJE18006G SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE18006G has an applications specific state−of−the−art die designed for use in 220 V line−operated SWITCHMODE Power supplies and electronic light ballasts.


    Original     		PDF MJE18006G MJE18006G O-220 O-220AB 21A-09 MJE18006/D MJE18006 MJE210 MPF930 MTP12N10 MTP8P10 MUR105

    MJE18006G

    Abstract: MJE18006 MJE210 MPF930 MTP12N10 MTP8P10 MUR105
    Text: MJE18006 Preferred Device SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE18006 has an applications specific state−of−the−art die designed for use in 220 V line−operated SWITCHMODE Power supplies and electronic light ballasts.


    Original     		PDF MJE18006 MJE18006 O-220 MJE18006/D MJE18006G MJE210 MPF930 MTP12N10 MTP8P10 MUR105

    MAGNETICA

    Abstract: smd diode t8 Schottky electronic ballast for tube light 36 ELECTRONIC BALLAST 4 T8 SCHEMATIC 1N414 diode L6585 1n4007 sod123 1N4007 SOD80C package t8 ballast circuits ELECTRONIC BALLAST 2 LAMP SCHEMATIC
    Text: AN3032 Application note STEVAL-ILB007V1, 2 x 58 W/T8 ballast based on the L6585DE suitable for 2 x 36 W/T8 lamp Introduction This application note describes a demonstration board able to drive 2 x 58 W linear T8 fluorescent tubes. The last section of the document describes the changes that need to be


    Original     		PDF AN3032 STEVAL-ILB007V1, L6585DE MAGNETICA smd diode t8 Schottky electronic ballast for tube light 36 ELECTRONIC BALLAST 4 T8 SCHEMATIC 1N414 diode L6585 1n4007 sod123 1N4007 SOD80C package t8 ballast circuits ELECTRONIC BALLAST 2 LAMP SCHEMATIC

    BUL146G

    Abstract: 221D BUL146 BUL146F BUL146FG MPF930 MTP8P10
    Text: BUL146G, BUL146FG SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The BUL146G / BUL146FG have an applications specific state−of−the−art die designed for use in fluorescent electric lamp ballasts to 130 W and in Switchmode Power supplies for all types of


    Original     		PDF BUL146G, BUL146FG BUL146G BUL146FG O-220 O-220 BUL146F BUL146/D 221D BUL146 MPF930 MTP8P10

    221D

    Abstract: BUL146 BUL146F BUL146FG BUL146G MPF930 MTP8P10
    Text: BUL146, BUL146F SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The BUL146 / BUL146F have an applications specific state−of−the−art die designed for use in fluorescent electric lamp ballasts to 130 W and in Switchmode Power supplies for all types of


    Original     		PDF BUL146, BUL146F BUL146 BUL146F O-220 O-220 BUL146F, BUL146/D 221D BUL146FG BUL146G MPF930 MTP8P10

    Untitled

    Abstract: No abstract text available
    Text: BUL146, BUL146F SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The BUL146 / BUL146F have an applications specific state−of−the−art die designed for use in fluorescent electric lamp ballasts to 130 W and in Switchmode Power supplies for all types of


    Original     		PDF BUL146, BUL146F BUL146 O-220 BUL146F, E69369 BUL146/D

    Untitled

    Abstract: No abstract text available
    Text: BUL146G, BUL146FG SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The BUL146G / BUL146FG have an applications specific state−of−the−art die designed for use in fluorescent electric lamp ballasts to 130 W and in Switchmode Power supplies for all types of


    Original     		PDF BUL146G, BUL146FG BUL146G BUL146FG BUL146/D

    BUD616A

    Abstract: smd transistor A1 ic 8853 597 smd transistor
    Text: BUD616A TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features D D D D D D D D D Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planarpassivation 100 kHz switching rate Very low dynamic saturation Very low operating temperature


    Original     		PDF BUD616A D-74025 BUD616A smd transistor A1 ic 8853 597 smd transistor

    Untitled

    Abstract: No abstract text available
    Text: Power line chokes Current-compensated ring core double chokes 250 V AC, 0.3 … 3 A, 1.2 … 68 mH Series/Type: B82722A/J 7f…fÁRspp… October 2008 Date: EPCOS AG 2008. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS’ prior express consent is prohibited.


    Original     		PDF B82722A/J B82722A/J B82722A

    B82722A2302N001

    Abstract: B82722A2202N001 B82722J2501N021 b82722j B82722A2501N001 B82722J2202N020 B82722J2202N001 B82722J2302N001 B82722A2102 B82722A2152N020
    Text: Power line chokes Current-compensated ring core double chokes 250 V AC, 0.3 … 3 A, 1.2 … 68 mH Series/Type: B82722A/J 7f…fÁRspp… October 2008, January 2009 Date: EPCOS AG 2008. Reproduction, publication and dissemination of this publication, enclosures


    Original     		PDF B82722A/J B82722A B82722A2302N001 B82722A2202N001 B82722J2501N021 b82722j B82722A2501N001 B82722J2202N020 B82722J2202N001 B82722J2302N001 B82722A2102 B82722A2152N020