ELECTRONIC BALLAST 150 W HID DIAGRAM
Abstract: CDM 4 Philips ELECTRONIC BALLAST 70 W HID DIAGRAM 70W hid ballast ELECTRONIC BALLAST 400 W HID DIAGRAM metal halide electronic ballast circuit advantages of earth leakage circuit breaker ELECTRONIC BALLAST 70 W HID HID 35W TBA marking
Text: NEW HID-PrimaVision electronic ballasts NEW for CDM 35, 70 and 150W lamps Definition Compact, one-piece, electronic ballast for built-in /S or /P or stand-alone (/I) applications with low wattage ceramic metal halide lamps. Description Lamp advantages • In practical applications HID-PV
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035/S
070/S
035/S
035/I
035/P
235/S
235/P
235/I
ELECTRONIC BALLAST 150 W HID DIAGRAM
CDM 4 Philips
ELECTRONIC BALLAST 70 W HID DIAGRAM
70W hid ballast
ELECTRONIC BALLAST 400 W HID DIAGRAM
metal halide electronic ballast circuit
advantages of earth leakage circuit breaker
ELECTRONIC BALLAST 70 W HID
HID 35W
TBA marking
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STBV45
Abstract: No abstract text available
Text: STBV45 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ MEDIUM VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED APPLICATIONS: ■ ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING
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STBV45
STBV45
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Untitled
Abstract: No abstract text available
Text: STBV45 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ MEDIUM VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED APPLICATIONS: ■ ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING
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STBV45
STBV45
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1N5761
Abstract: npn BUL45G bul45a
Text: BUL45G NPN Silicon Power Transistor High Voltage SWITCHMODE Series Designed for use in electronic ballast light ballast and in SWITCHMODE Power supplies up to 50 W. Features • Improved Efficiency Due to: Low Base Drive Requirements (High and Flat DC Current Gain hFE)
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BUL45G
BUL45/D
1N5761
npn BUL45G
bul45a
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bul45g
Abstract: No abstract text available
Text: BUL45G NPN Silicon Power Transistor High Voltage SWITCHMODE Series Designed for use in electronic ballast light ballast and in SWITCHMODE Power supplies up to 50 W. Features • Improved Efficiency Due to: Low Base Drive Requirements (High and Flat DC Current Gain hFE)
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BUL45G
O-220AB
21A-09
BUL45/D
bul45g
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MJE18002G
Abstract: MJE18002 MJE210 MPF930 MTP12N10 MTP8P10 MUR105
Text: MJE18002G SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE18002G have an applications specific state−of−the−art die designed for use in 220 V line operated Switchmode Power supplies and electronic light ballasts.
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MJE18002G
MJE18002G
O-220
O-220AB
21A-09
MJE18002/D
MJE18002
MJE210
MPF930
MTP12N10
MTP8P10
MUR105
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BUL44
Abstract: BUL44G MJE210 MPF930 MTP12N10 MTP8P10 MUR105
Text: BUL44G SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The BUL44G have an applications specific state−of−the−art die designed for use in 220 V line operated Switchmode Power supplies and electronic light ballasts. Features
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BUL44G
BUL44G
O-220AB
21A-09
BUL44/D
BUL44
MJE210
MPF930
MTP12N10
MTP8P10
MUR105
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MJE18002
Abstract: MJE18002G MJE210 MPF930 MTP12N10 MTP8P10 MUR105
Text: MJE18002 Preferred Device SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE18002 have an applications specific state−of−the−art die designed for use in 220 V line operated Switchmode Power supplies and electronic light ballasts.
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MJE18002
MJE18002
O-220
MJE18002/D
MJE18002G
MJE210
MPF930
MTP12N10
MTP8P10
MUR105
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BUL44
Abstract: BUL44G MJE210 MPF930 MTP12N10 MTP8P10 MUR105
Text: BUL44 SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The BUL44 have an applications specific state−of−the−art die designed for use in 220 V line operated Switchmode Power supplies and electronic light ballasts. Features
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BUL44
BUL44
BUL44/D
BUL44G
MJE210
MPF930
MTP12N10
MTP8P10
MUR105
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Untitled
Abstract: No abstract text available
Text: BUL44G SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The BUL44G have an applications specific state−of−the−art die designed for use in 220 V line operated Switchmode Power supplies and electronic light ballasts. Features
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BUL44G
BUL44G
220AB
BUL44/D
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Untitled
Abstract: No abstract text available
Text: MJE18002G SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE18002G have an applications specific state−of−the−art die designed for use in 220 V line operated Switchmode Power supplies and electronic light ballasts.
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MJE18002G
MJE18002G
220AB
MJE18002/D
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B82733F2901B001
Abstract: B82733F2172A001 B82733F2222A001 B82733F2292A001 B82733F2112B001 B82733F2701B001 B82733F2192B001
Text: Chokes for Power Lines Series/Type: B82733F The following products presented in this data sheet are being withdrawn. Ordering Code Substitute Product Date of Withdrawal B82733F2751A001 B82733F2701B001 2006-06-09 B82733F2951A001 B82733F2901B001 2006-06-09 B82733F2122A001
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B82733F
B82733F2751A001
B82733F2701B001
B82733F2951A001
B82733F2901B001
B82733F2122A001
B82733F2112B001
B82733F2142A001
B82733F2122B001
B82733F2172A001
B82733F2901B001
B82733F2172A001
B82733F2222A001
B82733F2292A001
B82733F2112B001
B82733F2701B001
B82733F2192B001
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1N5761
Abstract: marking code t1a BUL45 BUL45G MJE210 MPF930 MTP12N10 MTP8P10 MUR105 MUR150
Text: BUL45 NPN Silicon Power Transistor High Voltage SWITCHMODEt Series Designed for use in electronic ballast light ballast and in Switchmode Power supplies up to 50 Watts. Features • Improved Efficiency Due to: ♦ Low Base Drive Requirements (High and Flat DC Current Gain hFE)
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BUL45
O-220AB
21A-09
BUL45/D
1N5761
marking code t1a
BUL45
BUL45G
MJE210
MPF930
MTP12N10
MTP8P10
MUR105
MUR150
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1N5761
Abstract: toroid FT10 BUL45G BUL45 marking code t1a MUR150 MJE210 MPF930 MTP12N10 MTP8P10
Text: BUL45G NPN Silicon Power Transistor High Voltage SWITCHMODEt Series Designed for use in electronic ballast light ballast and in Switchmode Power supplies up to 50 Watts. Features • Improved Efficiency Due to: Low Base Drive Requirements (High and Flat DC Current Gain hFE)
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BUL45G
O-220AB
21A-09
BUL45/D
1N5761
toroid FT10
BUL45G
BUL45
marking code t1a
MUR150
MJE210
MPF930
MTP12N10
MTP8P10
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MJE18006G
Abstract: MJE18006 MJE210 MPF930 MTP12N10 MTP8P10 MUR105
Text: MJE18006G SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE18006G has an applications specific state−of−the−art die designed for use in 220 V line−operated SWITCHMODE Power supplies and electronic light ballasts.
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MJE18006G
MJE18006G
O-220
O-220AB
21A-09
MJE18006/D
MJE18006
MJE210
MPF930
MTP12N10
MTP8P10
MUR105
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MJE18006G
Abstract: MJE18006 MJE210 MPF930 MTP12N10 MTP8P10 MUR105
Text: MJE18006 Preferred Device SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE18006 has an applications specific state−of−the−art die designed for use in 220 V line−operated SWITCHMODE Power supplies and electronic light ballasts.
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MJE18006
MJE18006
O-220
MJE18006/D
MJE18006G
MJE210
MPF930
MTP12N10
MTP8P10
MUR105
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MAGNETICA
Abstract: smd diode t8 Schottky electronic ballast for tube light 36 ELECTRONIC BALLAST 4 T8 SCHEMATIC 1N414 diode L6585 1n4007 sod123 1N4007 SOD80C package t8 ballast circuits ELECTRONIC BALLAST 2 LAMP SCHEMATIC
Text: AN3032 Application note STEVAL-ILB007V1, 2 x 58 W/T8 ballast based on the L6585DE suitable for 2 x 36 W/T8 lamp Introduction This application note describes a demonstration board able to drive 2 x 58 W linear T8 fluorescent tubes. The last section of the document describes the changes that need to be
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AN3032
STEVAL-ILB007V1,
L6585DE
MAGNETICA
smd diode t8 Schottky
electronic ballast for tube light 36
ELECTRONIC BALLAST 4 T8 SCHEMATIC
1N414 diode
L6585
1n4007 sod123
1N4007 SOD80C package
t8 ballast circuits
ELECTRONIC BALLAST 2 LAMP SCHEMATIC
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BUL146G
Abstract: 221D BUL146 BUL146F BUL146FG MPF930 MTP8P10
Text: BUL146G, BUL146FG SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The BUL146G / BUL146FG have an applications specific state−of−the−art die designed for use in fluorescent electric lamp ballasts to 130 W and in Switchmode Power supplies for all types of
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BUL146G,
BUL146FG
BUL146G
BUL146FG
O-220
O-220
BUL146F
BUL146/D
221D
BUL146
MPF930
MTP8P10
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221D
Abstract: BUL146 BUL146F BUL146FG BUL146G MPF930 MTP8P10
Text: BUL146, BUL146F SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The BUL146 / BUL146F have an applications specific state−of−the−art die designed for use in fluorescent electric lamp ballasts to 130 W and in Switchmode Power supplies for all types of
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BUL146,
BUL146F
BUL146
BUL146F
O-220
O-220
BUL146F,
BUL146/D
221D
BUL146FG
BUL146G
MPF930
MTP8P10
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Untitled
Abstract: No abstract text available
Text: BUL146, BUL146F SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The BUL146 / BUL146F have an applications specific state−of−the−art die designed for use in fluorescent electric lamp ballasts to 130 W and in Switchmode Power supplies for all types of
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BUL146,
BUL146F
BUL146
O-220
BUL146F,
E69369
BUL146/D
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Untitled
Abstract: No abstract text available
Text: BUL146G, BUL146FG SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The BUL146G / BUL146FG have an applications specific state−of−the−art die designed for use in fluorescent electric lamp ballasts to 130 W and in Switchmode Power supplies for all types of
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BUL146G,
BUL146FG
BUL146G
BUL146FG
BUL146/D
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BUD616A
Abstract: smd transistor A1 ic 8853 597 smd transistor
Text: BUD616A TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features D D D D D D D D D Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planarpassivation 100 kHz switching rate Very low dynamic saturation Very low operating temperature
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BUD616A
D-74025
BUD616A
smd transistor A1
ic 8853
597 smd transistor
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Untitled
Abstract: No abstract text available
Text: Power line chokes Current-compensated ring core double chokes 250 V AC, 0.3 … 3 A, 1.2 … 68 mH Series/Type: B82722A/J 7f
fÁRspp
October 2008 Date: EPCOS AG 2008. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS’ prior express consent is prohibited.
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B82722A/J
B82722A/J
B82722A
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B82722A2302N001
Abstract: B82722A2202N001 B82722J2501N021 b82722j B82722A2501N001 B82722J2202N020 B82722J2202N001 B82722J2302N001 B82722A2102 B82722A2152N020
Text: Power line chokes Current-compensated ring core double chokes 250 V AC, 0.3 … 3 A, 1.2 … 68 mH Series/Type: B82722A/J 7f
fÁRspp
October 2008, January 2009 Date: EPCOS AG 2008. Reproduction, publication and dissemination of this publication, enclosures
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B82722A/J
B82722A
B82722A2302N001
B82722A2202N001
B82722J2501N021
b82722j
B82722A2501N001
B82722J2202N020
B82722J2202N001
B82722J2302N001
B82722A2102
B82722A2152N020
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