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    1300 LASER DIODE RISE TIME Search Results

    1300 LASER DIODE RISE TIME Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    1300 LASER DIODE RISE TIME Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    E2000

    Abstract: laser 850 nm LED 1310 nm fiber coupled LED Laser International 850 nm LED "Photo Diode" Laser Diode LD Catalog HOD2236-111/BBA
    Text: Infrared Products Single Fiber Duplex Modules FEATURES • Full duplex over single fiber • DC to 160 MHz link bandwidth • Link budgets of 2 km [1.24 miles] or greater • 40 dB isolation • Low profile ST housing • Other options available • VCSEL is Class 1 eye safe


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    PDF HOD2236-111/BBA HOD4090-111/BBA 006469-1-E E2000 laser 850 nm LED 1310 nm fiber coupled LED Laser International 850 nm LED "Photo Diode" Laser Diode LD Catalog HOD2236-111/BBA

    Untitled

    Abstract: No abstract text available
    Text: Laser Diode Drivers MODEL Power Supply Analog NUMBER Requirements Bandwidth +Vcc +Icc MHz Volts + mA Max Trigger Rate for specs MHz Max Trigger Rate MHz Prop Delay Rising nsec Rise & Fall Time nsec Iout DNL mA Bits max 20 100 40 200 1.6 2.9>5 1.7 2 200 120


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    PDF AD9660 AD9661A ADN2840 Page-160

    2 Wavelength Laser Diode

    Abstract: laser DFB 1300 rise
    Text: C-13XX-DFB-RX-SXXXX 1300 nm Features ! ! ! ! ! ! Un-cooled laser diode with MQW structure High temperature operation without active cooling Hermetically sealed active component Built-in InGaAs monitor photodiode Complies with Bellcore TA-NWT-000983 Single frequency operation with high


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    PDF C-13XX-DFB-RX-SXXXX TA-NWT-000983 C-13XX-DFB-PX-SXXXX/XXX-X OM-D-SP-0022-V2 NumberC-13XX-DFB-PX-SXXXX/XXX-X 2 Wavelength Laser Diode laser DFB 1300 rise

    850 nm LED

    Abstract: LED 1310 nm fiber coupled 1300 nm LED Honeywell DBM 01 E2000 HOD1121-411EBA laser 850 nm Laser Diode LD Catalog
    Text: Infrared Products Single Fiber Duplex Modules FEATURES • Full multiplex over single fiber • DC to 160 MHz link bandwidth • Link budgets of 2 km [1.24 miles] or greater • 40 dB isolation • SC connector • Other options available • VCSEL is Class 1 eye safe


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    PDF HOD2294-111/EBA HOD1121-411/EBA 006470-1-E 850 nm LED LED 1310 nm fiber coupled 1300 nm LED Honeywell DBM 01 E2000 HOD1121-411EBA laser 850 nm Laser Diode LD Catalog

    2 Wavelength Laser Diode

    Abstract: 1300 laser diode rise time laser DFB 1300 rise 90 ps
    Text: C-13XX-DFB2.5-RD-SXXXX 1300 nm C-13XX-DFB2.5-PD-SXXXX/XXX-X Features ! ! ! ! ! ! Un-cooled laser diode with MQW structure High temperature operation without active cooling Hermetically sealed active component Built-in InGaAs monitor photodiode Complies with Bellcore


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    PDF C-13XX-DFB2 TA-NWT-000983 OM-D-SP-0009-V2 NumberC-13XX-DFB2 2 Wavelength Laser Diode 1300 laser diode rise time laser DFB 1300 rise 90 ps

    diode 1314

    Abstract: laser diode 1310 nm fiber coupled The Diode with Package Outlines 1300 laser diode rise time 300 mw IR Laser Diode
    Text: STL 51704X STL 51705X 1300 nm Laser in Coaxial Package with SM-Pigtail, Low Power Half Duplex Operation • • • • Designed for application in fiber-optic networks Laser diode with Multi-Quantum Well structure Suitable for bit rates up to 1 Gbit/s Ternary photodiode at rear mirror for monitoring and


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    PDF 51704X 51705X 51704G Q62702-Pxxxx 1704A 51705G 1705A diode 1314 laser diode 1310 nm fiber coupled The Diode with Package Outlines 1300 laser diode rise time 300 mw IR Laser Diode

    Untitled

    Abstract: No abstract text available
    Text: SBH52454x-FSAN HIGH POWER BIDI Optical Standard Module for ATM-PON ONU Applications 1300 nm Emitting, 1550 nm Receiving Dimensions in mm • Ternary Photodiode at rear mirror for monitoring and control of radiant power • Low noise / high bandwidth PIN diode


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    PDF SBH52454x-FSAN D-13623,

    Untitled

    Abstract: No abstract text available
    Text: SBH52414x-FSAN HIGH POWER BIDI Optical Standard Module for ATM-PON ONU Applications 1300 nm Emitting, 1550 nm Receiving Dimensions in mm 1 1mm above TO-bottom connector type • Ternary Photodiode at rear mirror for monitoring and control of radiant power


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    PDF SBH52414x-FSAN D-13623,

    VDSL splitter

    Abstract: No abstract text available
    Text: SBH52444x-FSAN HIGH POWER BIDI Optical Standard Module for ATM-PON ONU Applications 1300 nm Emitting, 1550 nm Receiving Dimensions in mm • Ternary Photodiode at rear mirror for monitoring and control of radiant power • Low noise / high bandwidth PIN diode


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    PDF SBH52444x-FSAN D-13623, VDSL splitter

    Untitled

    Abstract: No abstract text available
    Text: SBH52444x-FSAN HIGH POWER BIDI Optical Standard Module for ATM-PON ONU Applications 1300 nm Emitting, 1550 nm Receiving Dimensions in mm • Ternary Photodiode at rear mirror for monitoring and control of radiant power • Low noise / high bandwidth PIN diode


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    PDF SBH52444x-FSAN D-13623,

    Untitled

    Abstract: No abstract text available
    Text: SBH52454x-FSAN HIGH POWER BIDI Optical Standard Module for ATM-PON ONU Applications 1300 nm Emitting, 1550 nm Receiving Dimensions in mm • Ternary Photodiode at rear mirror for monitoring and control of radiant power • Low noise / high bandwidth PIN diode


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    PDF SBH52454x-FSAN D-13623,

    Untitled

    Abstract: No abstract text available
    Text: SBH52414x-FSAN HIGH POWER BIDI Optical Standard Module for ATM-PON ONU Applications 1300 nm Emitting, 1550 nm Receiving Dimensions in mm 1 1mm above TO-bottom connector type • Ternary Photodiode at rear mirror for monitoring and control of radiant power


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    PDF SBH52414x-FSAN D-13623,

    SBL51214G

    Abstract: SBL51214N SBL51214Z SBL52214G SBL52214N SBL52214Z "beam splitter"
    Text: SBL52214x LOW POWER BIDI Optical Standard Module 1300 nm Emitting, 1300 nm Receiving Dimensions in mm 1 1mm above TO-bottom connector type Absolute Maximum Ratings Module Operating temperature range at case, TC . –40°C to 85°C Storage temperature range, Tstg . –40°C to 85°C


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    PDF SBL52214x D-13623, SBL51214G SBL51214N SBL51214Z SBL52214G SBL52214N SBL52214Z "beam splitter"

    photodiode 1300nm sensitivity single mode

    Abstract: "beam splitter"
    Text: SBL52214x LOW POWER BIDI Optical Standard Module 1300 nm Emitting, 1300 nm Receiving Dimensions in mm 1 1mm above TO-bottom connector type Absolute Maximum Ratings Module Operating temperature range at case, TC . –40°C to 85°C Storage temperature range, Tstg . –40°C to 85°C


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    PDF SBL52214x D-13623, photodiode 1300nm sensitivity single mode "beam splitter"

    SBM51214G

    Abstract: SBM51214N SBM51214Z SBM52214G SBM52214N SBM52214Z
    Text: SBM52214x MEDIUM POWER BIDI Optical Standard Module 1300 nm Emitting, 1300 nm Receiving Dimensions in mm 1 1mm above TO-bottom connector type Absolute Maximum Ratings Module Operating temperature range at case, TC . –40°C to 85°C Storage temperature range, Tstg . –40°C to 85°C


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    PDF SBM52214x D-13623, SBM51214G SBM51214N SBM51214Z SBM52214G SBM52214N SBM52214Z

    LDT-362

    Abstract: No abstract text available
    Text: LASER DIODE INC IE SBÖSTÖS 00DDM34 S I LAD LDT-362, LDT-362E LDT-60005, LDT-60005E LDT-60001 " T-4T-07 LASER DIODE IN C . 1300nm EDGE EMITTING LED SERIES FEATURES ►High Peak Power ►Fast Rise Time ►Single and Multi mode Fiber Optic Pigtail Options ► Hermetic and Non-Hermetic Packages


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    PDF 00DDM34 LDT-362, LDT-362E LDT-60005, LDT-60005E LDT-60001 T-4T-07 1300nm LDT-362

    IRE-387-002

    Abstract: IRE387-002
    Text: J „ p i a e T-4W 3 12E D I 5302^05 0DDDM3fl 5 | LASER DIODE INC : LASER DIODE INC. IRE-387-002 IRE-387-003 IRE-491 1300nm SURFACE EMITTING LED FEATURES ► Reliable Surface Emitting Construction ► High Radiance ► Exceptional Linearity ► Fast Rise and Fall Times


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    PDF IRE-387-002 IRE-387-003 IRE-491 1300nm IRE387-002

    LDT-362

    Abstract: 12AE6
    Text: LDT-362, LDT-362E LDT-60005, LDT-60005E LDT-60001 LASER DIODE IN C - 1300nm EDGE EMITTING LED SERIES FEATURES ►High Peak Power ►Fast Rise Time ►Single and Multi mode Fiber Optic Pigtail Options ►Hermetic and Non-Hermetic Packages ►Thermo-electric Cooler Option


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    PDF LDT-362, LDT-362E LDT-60005, LDT-60005E LDT-60001 1300nm LDT-362 12AE6

    1300 laser diode rise time

    Abstract: Indium Gallium Arsenide Phosphide lasers 502CQF indium gallium arsenide phosphide OC45K laser 477 Semiconductor Laser International data by 476 diode 1300 nm Laser 40 mW diode 476 k
    Text: N AMER PHILIPS/DISCRETE a?D bbSBT31 00CH733 0 D r D EV ELO PM EN T DATA This data shget contains advance information and specifications are subject to change w ithout notice. T-41-07 502CQF BURIED HETEROJUNCTION InGaAsP LASER DIODE WITH FIBRE PIGTAIL The 502C Q F is an InGaAsP buried heterojunction semiconductor laser diode. The device is designed


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    PDF 502CQF OT-184 1300 laser diode rise time Indium Gallium Arsenide Phosphide lasers indium gallium arsenide phosphide OC45K laser 477 Semiconductor Laser International data by 476 diode 1300 nm Laser 40 mW diode 476 k

    thermistor 7 rom

    Abstract: No abstract text available
    Text: LA S E R DIODE IN C la E D I SBñaTñS 1 GDD0411 • =1 | ■ T - W - o s r _ LCW -1300 SERIES LASER DIODE, INC. 4300nm Multimode Pigtailed Lasers FEATURES ► InGaAsP Buried Crescent Low Threshold Current Hermetically Sealed Package P Extended Operating Temperature Range


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    PDF GDD0411 4300nm 100yum 50mWe thermistor 7 rom

    503CQF

    Abstract: Indium Gallium Arsenide Phosphide lasers 1300 laser diode rise time laser diode philips
    Text: N AMER PHILIPS /DISCRETE Û7D D b t i S 3 ‘ì 3 1 D00T737 T-4Î-07 DEVELO PM EN T DATA Th is data sheet contains advance information end specifications are subject to change w ithout notice. fl 503CQF BURIED HETEROJUNCTION InGaAsP LASER DIODE WITH SINGLE MODE FIBRE PIGTAIL


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    PDF D00T737 503CQF 503CQF Indium Gallium Arsenide Phosphide lasers 1300 laser diode rise time laser diode philips

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE fl7D D D E V ELO PM EN T DATA bbS3T31 DDOTTSS 0 • ' T^41-07 This data sheat contains advance Information and specifications are subject to change without notice. 502CQF BURIED HETEROJUNCTION InGaAsP LASER DIODE WITH FIBRE PIGTAIL


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    PDF bbS3T31 502CQF T-184

    diode 1314

    Abstract: 1300 laser diode rise time
    Text: SIEMENS 1300 nm Laser in Coaxial Package with SM-Pigtail, Low Power Half Duplex Operation STL 51704X STL 51705X • • • • Designed for application in fiber-optic networks Laser diode with Multi-Quantum Well structure Suitable for bit rates up to 1 Gbit/s


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    PDF 51704X 51705X 51704G 1704A STL51705G 1705A Q62702-PXXXX Q62702-PXXXX diode 1314 1300 laser diode rise time

    Power DIODE A30

    Abstract: a30 DIODE DIODE A30
    Text: bOE D • S235bOS 004b5bb TT7 H S I E 6 SIEMENS SFH 4448 TRANSCEIVER OPTICAL MODULE SIEMENS AKTIEN6ESELLSCHAF Package Dimensions in mm Emitter @1 HI Detector a FEATURES Maximum Ratings • Bidirectional Module with Integrated Beam Splitter Output power ratings refer to the SM fiber output. The operating


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    PDF S235bOS 004b5bb Power DIODE A30 a30 DIODE DIODE A30