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    13002 AND POWER TRANSISTOR Search Results

    13002 AND POWER TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    13002 AND POWER TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    13002

    Abstract: 13003 13003 TRANSISTOR transistor 13002 13002 TRANSISTOR transistor 13003 transistor 13003 A c s 13003 TRANSISTOR 13002 and 13003 power transistor SD13003
    Text: SD13002 / SD13003 NPN Silicon Epitaxial Planar Transistor for power switching and electron rectifier applications. These transistors are subdivided into one group according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


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    SD13002 SD13003 O-92L 100mA 13002 13003 13003 TRANSISTOR transistor 13002 13002 TRANSISTOR transistor 13003 transistor 13003 A c s 13003 TRANSISTOR 13002 and 13003 power transistor SD13003 PDF

    13002 TRANSISTOR

    Abstract: transistor 13002 13003 TRANSISTOR 13002 13003 transistor 13003 13002 and 13003 power transistor c s 13003 TRANSISTOR BR 13003 W 13003 TRANSISTOR
    Text: SD13002 / SD13003 NPN Silicon Epitaxial Planar Transistor for power switching and electron rectifier applications. These transistors are subdivided into one group according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


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    SD13002 SD13003 O-92L 100mA 13002 TRANSISTOR transistor 13002 13003 TRANSISTOR 13002 13003 transistor 13003 13002 and 13003 power transistor c s 13003 TRANSISTOR BR 13003 W 13003 TRANSISTOR PDF

    transistor 13002

    Abstract: 13003 TRANSISTOR 13003 13002 TRANSISTOR 13002 transistor 13003 13002 and 13003 power transistor BR 13003 sd13003 W 13003 TRANSISTOR
    Text: SD13002 / SD13003 NPN Silicon Epitaxial Planar Transistor for power switching and electron rectifier applications. These transistors are subdivided into one group according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


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    SD13002 SD13003 O-92L 100mA transistor 13002 13003 TRANSISTOR 13003 13002 TRANSISTOR 13002 transistor 13003 13002 and 13003 power transistor BR 13003 sd13003 W 13003 TRANSISTOR PDF

    transistor TO-92 13002

    Abstract: 13002 TO-92 transistor x 13002 13002 T CSD 13002 13002 TRANSISTOR transistor 13002 tr 13002 transistor 13002 to-92 13002 TO 92 PACKAGE
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL, HIGH SPEED, HIGH VOLTAGE SWITCHING TRANSISTOR CSD13002 TO-92 Plastic Package For Lead Free Parts, Devices Part # will be Perfixed with "T"


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    CSD13002 C-120 CSD13002 290307E transistor TO-92 13002 13002 TO-92 transistor x 13002 13002 T CSD 13002 13002 TRANSISTOR transistor 13002 tr 13002 transistor 13002 to-92 13002 TO 92 PACKAGE PDF

    transistor w 13002

    Abstract: 13002 and power transistor 13002 TRANSISTOR transistor TO-92 13002
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL, HIGH SPEED, HIGH VOLTAGE SWITCHING TRANSISTOR CSD13002 TO-92 Plastic Package For Lead Free Parts, Devices Part # will be Perfixed with "T"


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    CSD13002 C-120 CSD13002 290307E transistor w 13002 13002 and power transistor 13002 TRANSISTOR transistor TO-92 13002 PDF

    QPP-010

    Abstract: H10536
    Text: QPP-010 60W, 925-960MHz Class AB Power Stage QuikPAC Module Data General description: Features: The QPP-010 QuikPAC RF power module is a Class AB amplifier stage designed for use in the driver or output stage of linear RF power amplifiers for cellular base stations. The power transistors are


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    QPP-010 925-960MHz QPP-010 H10536) H11029) H10536 PDF

    5W amplifier tone

    Abstract: QPP-304
    Text: QPP-304 25W, 2110-2170MHz Class AB Driver Stage QuikPAC Module Data General description: Features: The QPP-304 QuikPAC RF power module is a Class AB amplifier stage designed for use in the driver stage of linear RF power amplifiers for cellular base stations. The power transistors are


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    QPP-304 2110-2170MHz QPP-304 H10890) 5W amplifier tone PDF

    QPP-014

    Abstract: No abstract text available
    Text: QPP-014 35W, 925-960MHz Class AB Driver Stage QuikPAC Module Data General description: Features: The QPP-014 QuikPAC RF power module is a Class AB amplifier stage designed for use in the driver stage of linear RF power amplifiers for cellular base stations. The power transistors are


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    QPP-014 925-960MHz QPP-014 H10890) PDF

    transistor t114

    Abstract: transistor 13002 to-92
    Text: LESHAN RADIO COMPANY, LTD. LR257 AC/DC Current Mode PWM power management controller The LR257 AC—DC is a high efficiency current-mode PWM power supply controller。 It drives an external NPN transistor for high voltage switching. Apply with BiCMOS technology, the


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    LR257 LR257 EN55022A 150KHz 10MHz 30MHz transistor t114 transistor 13002 to-92 PDF

    transistor 13002

    Abstract: 13002 transistor transistor 13002 TO 05 QPP-008 all transistor 13002 13002 power transistor transistor w 13002
    Text: QPP-008 35W, 925-960MHz Class AB Driver Stage QuikPAC Module Data General description: Features: The QPP-008 QuikPAC RF power module is an impedance matched Class AB amplifier stage designed for use in the driver stage of linear RF power amplifiers for cellular base stations. The power


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    QPP-008 925-960MHz QPP-008 H10890) transistor 13002 13002 transistor transistor 13002 TO 05 all transistor 13002 13002 power transistor transistor w 13002 PDF

    act30bht

    Abstract: 13003 transistor power supply circuits ACT30BHT-A 13003 MOSFET transistor ACT30AHT-A 13002 and 13003 power transistor act30b E 13003 TRANSISTOR npn transistors 400V low power to92 flyback 13003
    Text: Datasheet Rev 2, 5/2005 ACT30 ACT30 HIGH PERFORMANCE OFF-LINE CONTROLLER ActiveSwitcherTM IC Family FEATURES GENERAL DESCRIPTION Lowest Total Cost Solution 0.15W Standby Power Emitter Drive Allows Safe NPN Flyback Use Hiccup Mode Short Circuit Current Mode Operation


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    ACT30 65kHz 100kHz ACT30 act30bht 13003 transistor power supply circuits ACT30BHT-A 13003 MOSFET transistor ACT30AHT-A 13002 and 13003 power transistor act30b E 13003 TRANSISTOR npn transistors 400V low power to92 flyback 13003 PDF

    H10536

    Abstract: QPP-004 13002 TRANSISTOR 60W POWER AMPLIFIER transistor 13002 TO 05 13002 power transistor
    Text: QPP-004 60W, 925-960MHz Class AB Power Stage QuikPAC Module Data General description: Features: The QPP-004 QuikPAC RF power module is an impedance matched Class AB amplifier stage designed for use in the driver or output stages of linear RF power amplifiers for cellular base stations.


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    QPP-004 925-960MHz QPP-004 H10536) H11029) H10536 13002 TRANSISTOR 60W POWER AMPLIFIER transistor 13002 TO 05 13002 power transistor PDF

    transistor 13002

    Abstract: 13002 power transistor transistor 13002 TO 05 QPP-303 Class A power amplifiers transistor w 13002
    Text: QPP-303 25W, 2110-2170MHz Class AB Driver Stage QuikPAC Module Data General description: Features: The QPP-303 QuikPAC RF power module is an impedance matched Class AB amplifier stage designed for use in the driver stage of linear RF power amplifiers for cellular base stations. The power


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    QPP-303 2110-2170MHz QPP-303 H10890) transistor 13002 13002 power transistor transistor 13002 TO 05 Class A power amplifiers transistor w 13002 PDF

    act30bht

    Abstract: 13003 transistor power supply circuits 13003 MOSFET transistor ACT30BHT-A ACT30AHT-A act30aht ACT30 flyback 13003 act30bh act30 application
    Text: Datasheet Rev 2, 5/2005 ACT30 ACT30 HIGH PERFORMANCE OFF-LINE CONTROLLER ActiveSwitcherTM IC Family FEATURES GENERAL DESCRIPTION Lowest Total Cost Solution 0.15W Standby Power Emitter Drive Allows Safe NPN Flyback Use Hiccup Mode Short Circuit Current Mode Operation


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    ACT30 65kHz 100kHz ACT30 man50 act30bht 13003 transistor power supply circuits 13003 MOSFET transistor ACT30BHT-A ACT30AHT-A act30aht flyback 13003 act30bh act30 application PDF

    transistor 13002

    Abstract: MCH3105 MCH3205 TA-3357
    Text: MCH3105 / MCH3205 Ordering number : ENN7128A PNP / NPN Epitaxial Planar Silicon Transistors MCH3105 / MCH3205 High-Current Switching Applications Applications • DC / DC converters, relay drivers, lamp drivers, motor drivers, flash. Features • • • •


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    MCH3105 MCH3205 ENN7128A MCH3105 transistor 13002 MCH3205 TA-3357 PDF

    transistor 13002

    Abstract: MCH3105 MCH3205 TA-3557 ta3557
    Text: Ordering number : ENN7128 MCH3105 / MCH3205 PNP / NPN Silicon Epitaxial Planar Transistors MCH3105 / MCH3205 High-Current Switching Applications Applications • Package Dimensions DC / DC converters, relay drivers, lamp drivers, motor unit : mm drivers, strobes.


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    ENN7128 MCH3105 MCH3205 MCH3205] MCH3105 transistor 13002 MCH3205 TA-3557 ta3557 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN7128B MCH3105/MCH3205 Bipolar Transistor http://onsemi.com – 50V, (–)3A, Low VCE(sat), (PNP)NPN Single MCPH3 Applicaitons • DC / DC converters, relay drivers, lamp drivers, motor drivers, flash Features • • • • • Large current capacity


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    EN7128B MCH3105/MCH3205 MCH3105 PDF

    13003 TRANSISTOR equivalent

    Abstract: transistor sw 13003 transistor Eb 13003 A JE 13003 transistor eb 13003 j e 13003 MOTOROLA transistor MJE13002MJE13003 S JE 13003 13002 and 13003 power transistor TR 13003 transistor
    Text: MOTOROLA O rder this docum ent by MJE13002/D SEMICONDUCTOR TECHNICAL DATA M JE 13002* M JE 13003* D esigner’s Data Sheet ‘ M otorola Preferred Device SWITCHMODE Series NPN Silicon Power Transistors 1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND 400 VOLTS


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    MJE13002/D O-225AA 13003 TRANSISTOR equivalent transistor sw 13003 transistor Eb 13003 A JE 13003 transistor eb 13003 j e 13003 MOTOROLA transistor MJE13002MJE13003 S JE 13003 13002 and 13003 power transistor TR 13003 transistor PDF

    3DD13002

    Abstract: 06-CL
    Text: TO-251 Plastic-Encapsulate Transistors 3D D 13002 TR A N SISTO R N PN FEATURES Power dissipation TO -2 5 1 Pcm; 1.25W (Tam b=25°C ) C o llecto r current 1 .BASE Icm- 2 .C O LLE C T O R 1A C ollecto r-b ase voltage 3 .E M IT T E R V(BR)CBO: 600 V u O perating and storage ju n ctio n tem perature range


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    O-251 3DD13002 O-251 06-CL PDF

    E 13003 TRANSISTOR

    Abstract: c s 13003 TRANSISTOR W 13003 TRANSISTOR 13002 TRANSISTOR transistor 13002 LM 13003 T 08 13003 transistor transistor LB 13003 C electronic ballast by transistor 13003 13003 TRANSISTOR
    Text: TELEFUNKEN ELECTRONIC 17E D • a^QO'te DDORb'S? : ■ AL GG TE 13002 TE 13003 TIiLllFlliKiKIK] electronic Crtfuv»Technotec«5 T-33-II Silicon NPN Power Transistors Applications: Switching mode power supply, electronic ballast features: • In multi diffusion technique


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    T-33-II 0IN41 I3-75. 15A3DIN E 13003 TRANSISTOR c s 13003 TRANSISTOR W 13003 TRANSISTOR 13002 TRANSISTOR transistor 13002 LM 13003 T 08 13003 transistor transistor LB 13003 C electronic ballast by transistor 13003 13003 TRANSISTOR PDF

    g 13003

    Abstract: LM 13003
    Text: SGS-THOMSON ^ □ ^ © i^ © ? ^ iD © S SGS 13002/13003 SGS 13002 T/13003 T HIGH VOLTAGE SWITCHING APPLICATIONS DESCRIPTION The SGS13002, SGS13003 SOT-82 plastic package and the SGS13002T, SGS13003T (TO220 plastic package) are silicon multiepitaxial-mesa


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    T/13003 SGS13002, SGS13003 OT-82 SGS13002T, SGS13003T MJE13002 O-126, SGS13002 g 13003 LM 13003 PDF

    transistor x 13001

    Abstract: c s 13001 TRANSISTOR diagram transistor 13001 BA13002 transistor c s x 13001 all transistor 13001 transistor s 13001 c s x 13001 H 06 BA13002F A13001
    Text: BA13001 /B A 13001F/BA13002/BA13002F BA1 3 0 0 1 / B A 1 3 0 0 1 F BAI 3 0 0 2 / B A 1 3 0 0 2 F Interface Driver for Microcontroller Peripherals and Displays • Dimentions Unit : mm The BA13001, BA13001F, BA13002, and BA13002F are large current transistor arrays with 6 Darlington


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    BA13001 13001F/BA13002/BA13002F BA13001, BA13001F, BA13002, BA13002F 320mA, BA13002) transistor x 13001 c s 13001 TRANSISTOR diagram transistor 13001 BA13002 transistor c s x 13001 all transistor 13001 transistor s 13001 c s x 13001 H 06 A13001 PDF

    BUV93

    Abstract: TU F 13003 BUV95 to-220 weight X 13003 13002 TO-92 13003 TO-92 13007 TE13002 13003
    Text: TELEFUNKEN ELECTRONIC filC D WM fi^SOCHb ODDSb43 1 • ALG6 POWER CONVERSION TRANSISTORS TELEFUNKEN electronic designs its high voltage power transistors for efficient operation in the full range of switching power supply, and switching amplifier topologies associated


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    OOOSb43 -Wt--214- BUV93 TU F 13003 BUV95 to-220 weight X 13003 13002 TO-92 13003 TO-92 13007 TE13002 13003 PDF

    TFK diodes BYW 76

    Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
    Text: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35


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