13002 TRANSISTOR Search Results

13002 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

13002 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
13002 npn Abstract: transistor 13002 13002 transistor ST-13002 13002 transistor TO-92 13002 13002 power transistor ST 13002 transistor 13002 TO 05 ,st 13002 Text: ST 13002 NPN Silicon Epitaxial Planar Transistor High voltage power transistor TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage VCBO 700 V Collector Emitter Voltage VCEO 400	Original	PDF
PC 13003 TRANSISTOR Abstract: PC 13003 13003 TRANSISTOR transistor 13002 13002 TRANSISTOR 13002 13003 transistor 13003 13003 TRANSISTOR PC 13003 TRANSISTOR 13003 TRANSISTOR npn Text: MJE13002 NPN MJE13003 (NPN) SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Rating 13002 Collector-base voltage Vcb 600 Collector-emitter voltage Vceo 300 Emitter-base voltage Veb 9 Collector current (DC) Ic 1.5 Collector current (Pulse)	Original	PDF	MJE13002 MJE13003 O-126 PC 13003 TRANSISTOR PC 13003 13003 TRANSISTOR transistor 13002 13002 TRANSISTOR 13002 13003 transistor 13003 13003 TRANSISTOR PC 13003 TRANSISTOR 13003 TRANSISTOR npn
transistor 13002 Abstract: 13002 npn ST-13002 transistor TO-92 13002 13002 transistor 13002 ST 13002 13002 TO-92 ST13002 13002 power transistor Text: ST 13002 NPN Silicon Epitaxial Planar Transistor High voltage power transistor TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage VCBO 700 V Collector Emitter Voltage VCEO 400	Original	PDF
transistor 13002 Abstract: KSE13002 13002 to-126 TRANSISTOR KSE13002HE13002 transistor13002 13002 TRANSISTOR 13002 npn D142AG-00 Text: NPN 汕头华汕电子器件有限公司 SILICON TRANSISTOR 13002 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图芯片尺寸：4 英寸（100mm）芯片代码：D142AG-00 芯片厚度：240±20µm 管芯尺寸：1420x1420µm 2 焊位尺寸：B 极 300×245µm 2，E 极 350×245µm 2	Original	PDF	100mm D142AG-00 KSE13002HE13002 O-126 10mAIB 10VIC 200mA 100mA transistor 13002 KSE13002 13002 to-126 TRANSISTOR KSE13002HE13002 transistor13002 13002 TRANSISTOR 13002 npn D142AG-00
13002 Abstract: 13003 13003 TRANSISTOR transistor 13002 13002 TRANSISTOR transistor 13003 transistor 13003 A c s 13003 TRANSISTOR 13002 and 13003 power transistor SD13003 Text: SD13002 / SD13003 NPN Silicon Epitaxial Planar Transistor for power switching and electron rectifier applications. These transistors are subdivided into one group according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.	Original	PDF	SD13002 SD13003 O-92L 100mA 13002 13003 13003 TRANSISTOR transistor 13002 13002 TRANSISTOR transistor 13003 transistor 13003 A c s 13003 TRANSISTOR 13002 and 13003 power transistor SD13003
13002 TRANSISTOR Abstract: transistor 13002 13003 TRANSISTOR 13002 13003 transistor 13003 13002 and 13003 power transistor c s 13003 TRANSISTOR BR 13003 W 13003 TRANSISTOR Text: SD13002 / SD13003 NPN Silicon Epitaxial Planar Transistor for power switching and electron rectifier applications. These transistors are subdivided into one group according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.	Original	PDF	SD13002 SD13003 O-92L 100mA 13002 TRANSISTOR transistor 13002 13003 TRANSISTOR 13002 13003 transistor 13003 13002 and 13003 power transistor c s 13003 TRANSISTOR BR 13003 W 13003 TRANSISTOR
transistor 13002 Abstract: 13003 TRANSISTOR 13003 13002 TRANSISTOR 13002 transistor 13003 13002 and 13003 power transistor BR 13003 sd13003 W 13003 TRANSISTOR Text: SD13002 / SD13003 NPN Silicon Epitaxial Planar Transistor for power switching and electron rectifier applications. These transistors are subdivided into one group according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.	Original	PDF	SD13002 SD13003 O-92L 100mA transistor 13002 13003 TRANSISTOR 13003 13002 TRANSISTOR 13002 transistor 13003 13002 and 13003 power transistor BR 13003 sd13003 W 13003 TRANSISTOR
transistor TO-92 13002 Abstract: 13002 TO-92 transistor x 13002 13002 T CSD 13002 13002 TRANSISTOR transistor 13002 tr 13002 transistor 13002 to-92 13002 TO 92 PACKAGE Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL, HIGH SPEED, HIGH VOLTAGE SWITCHING TRANSISTOR CSD13002 TO-92 Plastic Package For Lead Free Parts, Devices Part # will be Perfixed with "T"	Original	PDF	CSD13002 C-120 CSD13002 290307E transistor TO-92 13002 13002 TO-92 transistor x 13002 13002 T CSD 13002 13002 TRANSISTOR transistor 13002 tr 13002 transistor 13002 to-92 13002 TO 92 PACKAGE
transistor w 13002 Abstract: 13002 and power transistor 13002 TRANSISTOR transistor TO-92 13002 Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL, HIGH SPEED, HIGH VOLTAGE SWITCHING TRANSISTOR CSD13002 TO-92 Plastic Package For Lead Free Parts, Devices Part # will be Perfixed with "T"	Original	PDF	CSD13002 C-120 CSD13002 290307E transistor w 13002 13002 and power transistor 13002 TRANSISTOR transistor TO-92 13002
QPP-010 Abstract: H10536 Text: QPP-010 60W, 925-960MHz Class AB Power Stage QuikPAC Module Data General description: Features: The QPP-010 QuikPAC RF power module is a Class AB amplifier stage designed for use in the driver or output stage of linear RF power amplifiers for cellular base stations. The power transistors are	Original	PDF	QPP-010 925-960MHz QPP-010 H10536) H11029) H10536
QPP-014 Abstract: No abstract text available Text: QPP-014 35W, 925-960MHz Class AB Driver Stage QuikPAC Module Data General description: Features: The QPP-014 QuikPAC RF power module is a Class AB amplifier stage designed for use in the driver stage of linear RF power amplifiers for cellular base stations. The power transistors are	Original	PDF	QPP-014 925-960MHz QPP-014 H10890)
5W amplifier tone Abstract: QPP-304 Text: QPP-304 25W, 2110-2170MHz Class AB Driver Stage QuikPAC Module Data General description: Features: The QPP-304 QuikPAC RF power module is a Class AB amplifier stage designed for use in the driver stage of linear RF power amplifiers for cellular base stations. The power transistors are	Original	PDF	QPP-304 2110-2170MHz QPP-304 H10890) 5W amplifier tone
transistor t114 Abstract: transistor 13002 to-92 Text: LESHAN RADIO COMPANY, LTD. LR257 AC/DC Current Mode PWM power management controller The LR257 AC—DC is a high efficiency current-mode PWM power supply controller。 It drives an external NPN transistor for high voltage switching. Apply with BiCMOS technology, the	Original	PDF	LR257 LR257 EN55022A 150KHz 10MHz 30MHz transistor t114 transistor 13002 to-92
transistor 13002 Abstract: 13002 transistor transistor 13002 TO 05 QPP-008 all transistor 13002 13002 power transistor transistor w 13002 Text: QPP-008 35W, 925-960MHz Class AB Driver Stage QuikPAC Module Data General description: Features: The QPP-008 QuikPAC RF power module is an impedance matched Class AB amplifier stage designed for use in the driver stage of linear RF power amplifiers for cellular base stations. The power	Original	PDF	QPP-008 925-960MHz QPP-008 H10890) transistor 13002 13002 transistor transistor 13002 TO 05 all transistor 13002 13002 power transistor transistor w 13002

g 13003 Abstract: LM 13003 Text: SGS-THOMSON ^ □ ^ © i^ © ? ^ iD © S SGS 13002/13003 SGS 13002 T/13003 T HIGH VOLTAGE SWITCHING APPLICATIONS DESCRIPTION The SGS13002, SGS13003 SOT-82 plastic package and the SGS13002T, SGS13003T (TO220 plastic package) are silicon multiepitaxial-mesa	OCR Scan	PDF	T/13003 SGS13002, SGS13003 OT-82 SGS13002T, SGS13003T MJE13002 O-126, SGS13002 g 13003 LM 13003
E 13003 TRANSISTOR Abstract: c s 13003 TRANSISTOR W 13003 TRANSISTOR 13002 TRANSISTOR transistor 13002 LM 13003 T 08 13003 transistor transistor LB 13003 C electronic ballast by transistor 13003 13003 TRANSISTOR Text: TELEFUNKEN ELECTRONIC 17E D • a^QO'te DDORb'S? : ■ AL GG TE 13002 TE 13003 TIiLllFlliKiKIK] electronic Crtfuv»Technotec«5 T-33-II Silicon NPN Power Transistors Applications: Switching mode power supply, electronic ballast features: • In multi diffusion technique	OCR Scan	PDF	T-33-II 0IN41 I3-75. 15A3DIN E 13003 TRANSISTOR c s 13003 TRANSISTOR W 13003 TRANSISTOR 13002 TRANSISTOR transistor 13002 LM 13003 T 08 13003 transistor transistor LB 13003 C electronic ballast by transistor 13003 13003 TRANSISTOR
13003 TRANSISTOR equivalent Abstract: transistor sw 13003 transistor Eb 13003 A JE 13003 transistor eb 13003 j e 13003 MOTOROLA transistor MJE13002MJE13003 S JE 13003 13002 and 13003 power transistor TR 13003 transistor Text: MOTOROLA O rder this docum ent by MJE13002/D SEMICONDUCTOR TECHNICAL DATA M JE 13002* M JE 13003* D esigner’s Data Sheet ‘ M otorola Preferred Device SWITCHMODE Series NPN Silicon Power Transistors 1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND 400 VOLTS	OCR Scan	PDF	MJE13002/D O-225AA 13003 TRANSISTOR equivalent transistor sw 13003 transistor Eb 13003 A JE 13003 transistor eb 13003 j e 13003 MOTOROLA transistor MJE13002MJE13003 S JE 13003 13002 and 13003 power transistor TR 13003 transistor
HF 13003 Abstract: 13003 electronic ballast 13003 13002 sw 13003 LB 13002 BR 13003 13003 circuit HF 13002 H 13003 Text: TELEFUNKEN ELECTRONIC 17E D • a ^ Q O 't e DDORb'S? : ■ AL GG TE 13002 TE 13003 TIiLllFlliKiKIK] electronic Crtfuv»Technotec«5 T-33-II Silicon NPN Power Transistors Applications: Switching mode power supply, electronic ballast features: • In multi diffusion technique	OCR Scan	PDF	T-33-11 HF 13003 13003 electronic ballast 13003 13002 sw 13003 LB 13002 BR 13003 13003 circuit HF 13002 H 13003
X 13003 Abstract: 13002 d 13003 x 13003 sa 13002 13003 d F 13003 13003 h electronic ballast 13003 13002 npn Text: A El G CORP 17E D □ D S ^ MS t 000^27 5 • TE 13002 TE 13003 ! m H ï ï j £ K l ï S e le c t r o n ic CrearlelèchnQfogws r - 3 3 - il Silicon NPN Power Transistors Applicatipns: Switching mode power supply, electronic ballast Features: • In multi diffusion technique	OCR Scan	PDF	r-33-11 00IHb34 T-33-11 X 13003 13002 d 13003 x 13003 sa 13002 13003 d F 13003 13003 h electronic ballast 13003 13002 npn
3DD13002 Abstract: 06-CL Text: TO-251 Plastic-Encapsulate Transistors 3D D 13002 TR A N SISTO R N PN FEATURES Power dissipation TO -2 5 1 Pcm; 1.25W (Tam b=25°C ) C o llecto r current 1 .BASE Icm- 2 .C O LLE C T O R 1A C ollecto r-b ase voltage 3 .E M IT T E R V(BR)CBO: 600 V u O perating and storage ju n ctio n tem perature range	OCR Scan	PDF	O-251 3DD13002 O-251 06-CL
si 13001 transistor Abstract: transistor x 13002 diagram transistor 13001 transistor di 13001 transistor te 13001 13001 HF transistor x 13001 TRANSISTOR si 13001 13001 TRANSISTOR transistor s 13001 Text: BA13001 /BA13001F/BA13002/BA13002F B A 1 3 0 0 1 / B A 1 3 0 0 1 F B A 1 3 0 0 2 / B A 1 3 0 0 2 F • 7 -r -f □ - 7 i - X Interface Driver for Microcontroller Peripherals and Displays • i f E l / D i m e n t i o n s Unit : mm BA13001, B A 13002, BA13001F, B A 13002F IJ,	OCR Scan	PDF	BA13001 /BA13001F/BA13002/BA13002F BA13001, BA13001F, 13002F BA13002 BA13002F si 13001 transistor transistor x 13002 diagram transistor 13001 transistor di 13001 transistor te 13001 13001 HF transistor x 13001 TRANSISTOR si 13001 13001 TRANSISTOR transistor s 13001
13002 l Abstract: c s 13002 TRANSISTOR transistor BR 13002 Text: M C C TO-251 Plastic-Encapsulate Transistors 3D D 13002 TRANSISTOR NPN FE A T U RE S L TO-251 P cm: 1.2 5W (Tam b=25°C ) 1 .B A S E Icm: 1 A 2 .C O L L E C T O R I M M * « * » 'voltage' V(BR)CBO: 600 V 3 . E M IT T E R 1 2 S B fftfcra tin g a n d s to r a g e ju n c t io n te m p e r a tu r e ra n g e	OCR Scan	PDF	O-251 O-251 3DD13002 13002 l c s 13002 TRANSISTOR transistor BR 13002
transistor sw 13003 Abstract: sw 13003 E 13003 TRANSISTOR 13003 TRANSISTOR transistor 13003 k 13002 TRANSISTOR Sw 13003 c transistor 13003 d 13003 x T 13003 transistor Text: Te m ic TD13002 • TD13003 TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features • HIG H SPEED technology Very low dynam ic saturation • Glass passivation Very low operating tem perature • Very short sw itching tim es High reverse voltage	OCR Scan	PDF	TD13002 TD13003 ol13002 T0252 transistor sw 13003 sw 13003 E 13003 TRANSISTOR 13003 TRANSISTOR transistor 13003 k 13002 TRANSISTOR Sw 13003 c transistor 13003 d 13003 x T 13003 transistor
transistor x 13001 Abstract: c s 13001 TRANSISTOR diagram transistor 13001 BA13002 transistor c s x 13001 all transistor 13001 transistor s 13001 c s x 13001 H 06 BA13002F A13001 Text: BA13001 /B A 13001F/BA13002/BA13002F BA1 3 0 0 1 / B A 1 3 0 0 1 F BAI 3 0 0 2 / B A 1 3 0 0 2 F Interface Driver for Microcontroller Peripherals and Displays • Dimentions Unit : mm The BA13001, BA13001F, BA13002, and BA13002F are large current transistor arrays with 6 Darlington	OCR Scan	PDF	BA13001 13001F/BA13002/BA13002F BA13001, BA13001F, BA13002, BA13002F 320mA, BA13002) transistor x 13001 c s 13001 TRANSISTOR diagram transistor 13001 BA13002 transistor c s x 13001 all transistor 13001 transistor s 13001 c s x 13001 H 06 A13001

13002 TRANSISTOR Search Results

13002 TRANSISTOR Result Highlights (5)

13002 TRANSISTOR Datasheets Context Search

13002 npn

PC 13003 TRANSISTOR

transistor 13002

transistor 13002

13002

13002 TRANSISTOR

transistor 13002

transistor TO-92 13002

transistor w 13002

QPP-010

QPP-014

5W amplifier tone

transistor t114

transistor 13002

g 13003

E 13003 TRANSISTOR

13003 TRANSISTOR equivalent

HF 13003

X 13003

3DD13002

si 13001 transistor

13002 l

transistor sw 13003

transistor x 13001