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    13005 TRANSISTOR Search Results

    13005 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    13005 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    tr 13005

    Abstract: transistor 13005 CIRCUIT transistor 13005 13005 13005 equivalent 13005 TRANSISTOR KSE13004 KSE13005 PC 13005 TRANSISTOR TR 13005 transistor
    Text: KSE13004/13005 KSE13004/13005 High Voltage Switch Mode Application • High Speed Switching • Suitable for Switching Regulator and Motor Control TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted


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    KSE13004/13005 O-220 KSE13004 KSE13005 KSE1300ner tr 13005 transistor 13005 CIRCUIT transistor 13005 13005 13005 equivalent 13005 TRANSISTOR KSE13004 KSE13005 PC 13005 TRANSISTOR TR 13005 transistor PDF

    MJE13004

    Abstract: 13005 transistor 13005 13005 TRANSISTOR MJE13005 transistor 13005 CIRCUIT 13005 A tr 13005 PC 13005 TRANSISTOR MJE130
    Text: MJE13004/13005 MJE13004/13005 High Voltage Switch Mode Application • High Speed Switching • Suitable for Switching Regulator and Motor Control TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted


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    MJE13004/13005 O-220 MJE13004 MJE13005 MJE13004 13005 transistor 13005 13005 TRANSISTOR MJE13005 transistor 13005 CIRCUIT 13005 A tr 13005 PC 13005 TRANSISTOR MJE130 PDF

    13005 A transistor

    Abstract: TR 13005 transistor npn silicon transistor 13005 application 13005 TRANSISTOR transistor+13005
    Text: KSE13004/13005 KSE13004/13005 High Voltage Switch Mode Application • High Speed Switching • Suitable for Switching Regulator and Motor Control TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted


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    KSE13004/13005 O-220 KSE13004 KSE13005 KSE13005 KSE13005ATU KSE13005H2A KSE13005H1ATU 13005 A transistor TR 13005 transistor npn silicon transistor 13005 application 13005 TRANSISTOR transistor+13005 PDF

    E13005

    Abstract: e13005 2 transistor E13005 E13005 fairchild E13005 transistor e13005- 2 E13005 -2 npn silicon transistor 13005 application note 13005 datasheet E13005 transistor
    Text: KSE13004/13005 KSE13004/13005 High Voltage Switch Mode Application • High Speed Switching • Suitable for Switching Regulator and Motor Control TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted


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    KSE13004/13005 O-220 KSE13004 KSE13005 KSE1300er E13005 e13005 2 transistor E13005 E13005 fairchild E13005 transistor e13005- 2 E13005 -2 npn silicon transistor 13005 application note 13005 datasheet E13005 transistor PDF

    13005 TRANSISTOR

    Abstract: 13005 TRANSISTOR npn transistor 13005 transistor E 13005 13005 13005 s transistor d 1710 13005 2 13005 power transistor HSiN Semiconductor Pte
    Text: 13005 Transistor NPN HSiN Semiconductor Pte Ltd 13005 www.hsin.com.sg TRANSISTOR( NPN ) TO—220 FEATURES Power dissipation PCM : 1.5 W(Tamb=25℃) Collector current ICM: 4A Collector-base voltage V(BR)CBO : 700 V Operating and storage junction temperature range


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    O--220 100TYP 540TYP 13005 TRANSISTOR 13005 TRANSISTOR npn transistor 13005 transistor E 13005 13005 13005 s transistor d 1710 13005 2 13005 power transistor HSiN Semiconductor Pte PDF

    TR 13005 transistor

    Abstract: 13005 2 transistor
    Text: KSM13004/13005 TO-220 High Voltage Switch Mode Application • High Speed Switching • Suitable for Switching Regulator and Motor Control 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO


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    KSM13004/13005 O-220 KSM13004 KSM13005 95MAX. 54TYP TR 13005 transistor 13005 2 transistor PDF

    transistor 13005 CIRCUIT

    Abstract: 13005 2 transistor transistor 13005 13005 TRANSISTOR KSE13005 npn silicon transistor 13005 application note 13005 npn npn silicon transistor 13005 application KSE13004 13005 A
    Text: KSE13004/13005 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATION TO-220 • High Speed Switching • Suitable for Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage : KSE13004 : KSE13005 Collector Emitter Voltage : KSE13004


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    KSE13004/13005 O-220 KSE13004 KSE13005 transistor 13005 CIRCUIT 13005 2 transistor transistor 13005 13005 TRANSISTOR KSE13005 npn silicon transistor 13005 application note 13005 npn npn silicon transistor 13005 application KSE13004 13005 A PDF

    transistor 13005

    Abstract: npn silicon transistor 13005 application note 13005 ST-13005 A 13005 A 13005 TO-220 13005 2 ST-13005 BR 13005 13005 st
    Text: ST 13005 NPN Silicon Power Transistors for high-voltage, high-speed power switching applications. TO-220 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage VCBO 700 V Collector Emitter Voltage VCEO 400


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    O-220 transistor 13005 npn silicon transistor 13005 application note 13005 ST-13005 A 13005 A 13005 TO-220 13005 2 ST-13005 BR 13005 13005 st PDF

    13005

    Abstract: ST-13005 tr 13005 13005 equivalent npn silicon transistor 13005 application note
    Text: ST 13005 NPN Silicon Power Transistors These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulator’s, Inverters, Motor Controls, Solenoid /


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    O-220 13005 ST-13005 tr 13005 13005 equivalent npn silicon transistor 13005 application note PDF

    tr 13005

    Abstract: IC regulator 13005 transistor 13005 13005 A ST-13005 transistor 13005 CIRCUIT 13005 st
    Text: ST 13005 NPN Silicon Power Transistors These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulator’s, Inverters, Motor Controls, Solenoid /


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    O-220 tr 13005 IC regulator 13005 transistor 13005 13005 A ST-13005 transistor 13005 CIRCUIT 13005 st PDF

    transistor 13005

    Abstract: KSE13005HE13005 D260AG-00 KSE13005 10VIC
    Text: NPN 汕头华汕电子器件有限公司 SILICON TRANSISTOR 13005 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图 芯片尺寸:4 英寸(100mm) 芯片代码:D260AG-00 芯片厚度:240±20µm 管芯尺寸:2600x2600µm 2 焊位尺寸:B 极 366×540µm 2,E 极 292×560µm 2


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    100mm D260AG-00 KSE13005HE13005 O-220 10mAIB 10VIC 125VIC transistor 13005 KSE13005HE13005 D260AG-00 KSE13005 PDF

    13005 2 transistor

    Abstract: EB 13005 transistor 13005 E13005 EN 13005 transistor E 13005 13005 TRANSISTOR 13005 NPN Transistor PC 13005 TRANSISTOR EN 13005 2
    Text: KSE13004/13005 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATION TO-220 • High Speed Switching • Suitable for Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS Characteristic C o lle c to r B a s e V o lta g e : KSE13004 : K S E 13005


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    KSE13004/13005 O-220 KSE13004 KSE13005 13005 2 transistor EB 13005 transistor 13005 E13005 EN 13005 transistor E 13005 13005 TRANSISTOR 13005 NPN Transistor PC 13005 TRANSISTOR EN 13005 2 PDF

    EB 13005

    Abstract: Transistors 13005 D MJE13004
    Text: 7 ^ 5 ^ 5 3 7 0 0 5 ^ 1 0 5 1 13004 13005 • SGS-THOMSON ¡ILIOTa «! S G S-TH0MS0N MJE MJ E 3DE D HIGH VOLTAGE POWER SWITCH DESCRIPTION The MJE13004/13005 are silicon muitiepitaxial me­ sa NPN transistors in JedecTO -220 plastic package particularly intended for switch-mode applications.


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    MJE13004/13005 MJE13004 MJE13005 MJE13004-MJE13005 T-33-73 EB 13005 Transistors 13005 D MJE13004 PDF

    EB 13005

    Abstract: transistor 13005 CIRCUIT
    Text: KSE13004/13005 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATION • High Speed Switching • Suitable for Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS C haracteristic Collector Base Voltage Sym bol : KSE13004 Rating VcBO : KSE13005


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    KSE13004/13005 KSE13004 KSE13005 EB 13005 transistor 13005 CIRCUIT PDF

    13005 2 transistor

    Abstract: transistor 13005 13005 TRANSISTOR EB 13005 transistor E 13005 13005 NPN Transistor PC 13005 TRANSISTOR E13005 13005 power transistor EN 13005 2
    Text: KSE13004/13005 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATION • High Speed Switching • Suitable for Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Symbol VcBO : K S E 13004 : KSE13005 Collector Emitter Voltage


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    KSE13004/13005 KSE13005 KSE13004 13005 2 transistor transistor 13005 13005 TRANSISTOR EB 13005 transistor E 13005 13005 NPN Transistor PC 13005 TRANSISTOR E13005 13005 power transistor EN 13005 2 PDF

    SC-0351

    Abstract: ST13005 transistor 13005 CIRCUIT Transistor 13005- 2 transistor 13005
    Text: SGS-THOMSON S i IHD S T 13005 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . • . . MEDIUM VOLTAGE CAPABILITY NPN TRANSISTOR LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION . VERY HIGH SWITCHING SPEED APPLICATIONS: . ELECTRONIC BALLASTS FOR


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    O-220 ST13005 SC-0351 SC-0351 ST13005 transistor 13005 CIRCUIT Transistor 13005- 2 transistor 13005 PDF

    Untitled

    Abstract: No abstract text available
    Text: MJE13004 MJE13005 S G S -T H O M S O N ^□ gytemKgir^MOOs HIGH VOLTAGE POWER SWITCH DESCRIPTION The MJE13004/13005 are silicon multiepitaxial me­ sa NPN transistors in JedecTO-220 plastic package particularly intended for switch-mode applications. TO-220


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    MJE13004 MJE13005 MJE13004/13005 JedecTO-220 O-220 MJE13004-MJE13005 PDF

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON M G iœ iL IO T M ie S M JD 13005 HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR . . . . . . . . SGS-THOMSON PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED


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    O-251) MJD13005 MJD13005 0068771-E PDF

    e13009

    Abstract: E13009 TRANSISTOR equivalent 4000w audio amplifier JE-I3009 4000w inverter circuit 4000w power amplifier equivalent of transistor mje13007 mje13009 equivalent 125VDC to 24 VDC regulator circuit Motorola Bipolar Power Transistor Data
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE 13005* Designer’s Data Sheet "Motorola Preferred Device SWITCHMODE Series NPN Silicon Power Transistors These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and


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    MJE13005* e13009 E13009 TRANSISTOR equivalent 4000w audio amplifier JE-I3009 4000w inverter circuit 4000w power amplifier equivalent of transistor mje13007 mje13009 equivalent 125VDC to 24 VDC regulator circuit Motorola Bipolar Power Transistor Data PDF

    13005 2 transistor

    Abstract: TRANSISTOR 13005 13005 TRANSISTOR npn silicon transistor 13005 application 13005 NPN Transistor 13005 13005 npn 13005 A KSE13004 KSE13005
    Text: NPN SILICON TRANSISTOR KSE13004/13005 HIGH VOLTAGE SWITCH MODE APPLICATION • High Speed Switching • Suitable for Sw itching R egulator and M otor Control ABSOLUTE MAXIMUM RATINGS Characteristic C ollector Base Voltage Sym bol :K S E 1 3 0 0 4 V cB O : KSE13005


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    KSE13004/13005 KSE13004 KSE13005 10mATION 13005 2 transistor TRANSISTOR 13005 13005 TRANSISTOR npn silicon transistor 13005 application 13005 NPN Transistor 13005 13005 npn 13005 A KSE13005 PDF

    13005 2 transistor

    Abstract: transistor 13005 transistor E 13005 13005 EB 13005 13005 TRANSISTOR transistor d 13005 Transistor 13005- 2 EN 13005 2 EN 13005
    Text: KSE13004/13005 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATION TO-220 • H igh S p eed Sw itching • Suitable for Sw itching Regulator and M otor Control ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic C o lle cto r Base Voltage : K S E 13004


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    KSE13004/13005 O-220 KSE13004 13005 2 transistor transistor 13005 transistor E 13005 13005 EB 13005 13005 TRANSISTOR transistor d 13005 Transistor 13005- 2 EN 13005 2 EN 13005 PDF

    13005 ballast

    Abstract: 13005 ballast with 13005 Electronic ballast with 13005 E13005 13005 2 13005 s 13004 E 13005 s 13005 applications
    Text: Î- 1 TELEFUNKEN ELECTRONIC 17E D • fi^aODTb DGCHbaS 0 TE 13004 TE 13005 electronic Creative "fe c h n o to g « T-33MI Silicon NPN Power Transistors A p p lications; Sw itching mode power supply, electronic ballast Features: • In multi diffusion technique


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    T-33MI S64542 13005 ballast 13005 ballast with 13005 Electronic ballast with 13005 E13005 13005 2 13005 s 13004 E 13005 s 13005 applications PDF

    BR 13005

    Abstract: 13005 13005 ballast ballast with 13005 AEG T 250 N 700 transistor 13005 E 13005 s BR 13005 A 13004 TE13004
    Text: A E G CORP 1 ?E D O O a 'ì ' 4 2 b 0 0 0 1 1 .3 5 4 • TE 13004 ■TE 13005 1T11SFKKS1S ele ctro n ic Creat«TechnoJogies T - 3 3 MI Silicon NPN Power Transistors Applications: Switching mode power supply, electronic ballast Features: • In multi diffusion technique


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    Q02e14Sb T-33-U ooaci42b T-33-11 BR 13005 13005 13005 ballast ballast with 13005 AEG T 250 N 700 transistor 13005 E 13005 s BR 13005 A 13004 TE13004 PDF

    Transistors 13005 D

    Abstract: Transistor MJE 5331 13005 2 transistor hf 13005 MJE 5331 transistor E 13005 EB 13005 E 13005 L D 13005 K
    Text: tati53^3X D 0 n i2 7 = 1 D EV E LO P M E N T D ATA MJE 13004 MJE 13005 This data sheet contains advance information and specifications are subject to change without notice. N AI1ER PHILIPS/DISCRETE SSE D T - 53~I3 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed glass passivated npn power transistor in a TO-220 envelope, intended for use


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    tati53 O-220 MJE13004 bS3131 T-33-73 Transistors 13005 D Transistor MJE 5331 13005 2 transistor hf 13005 MJE 5331 transistor E 13005 EB 13005 E 13005 L D 13005 K PDF