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    13009A TRANSISTOR Search Results

    13009A TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    13009A TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    KSH13009

    Abstract: 13009a transistor 13009a MA1040
    Text: NPN 汕头华汕电子器件有限公司 SILICON TRANSISTOR 13009A 晶体管芯片 █ 芯片简介 █ 管芯示意图 芯片尺寸：4 英寸（100mm） 芯片代码：D400AG-00 芯片厚度：240±20µm 管芯尺寸：4000x4000µm 2 焊位尺寸：B 极 783×1100µm 2，E 极 754×1276µm 2


    Original     		3009A 100mm D400AG-00 KSH13009 O-220 10mAIB 12AIB 10VIC KSH13009 13009a transistor 13009a MA1040 PDF

    E13009a

    Abstract: 13009a HMJE13009A 13009a TRANSISTOR mje13009a transistor 13009a
    Text: HI-SINCERITY Spec. No. : HE200206 Issued Date : 2002.02.01 Revised Date : 2006.07.04 Page No. : 1/6 MICROELECTRONICS CORP. HMJE13009A 12 AMPERE NPN SILICON POWER TRANSISTOR Description The HMJE13009A is designed for high-voltage, high-speed power switching


    Original     		HE200206 HMJE13009A HMJE13009A O-220AB 120ns 183oC 217oC 260oC 10sec E13009a 13009a 13009a TRANSISTOR mje13009a transistor 13009a PDF

    HMJE13009AR

    Abstract: E13009a 13009a TRANSISTOR MJE13009A 13009a E 13009A NPN Transistor 400v to247
    Text: HI-SINCERITY Spec. No. : HR200502 Issued Date : 2005.10.01 Revised Date : 2005.10.19 Page No. : 1/6 MICROELECTRONICS CORP. HMJE13009AR 12 Ampere NPN Silicon Power Transistor Description The HMJE13009AR is designed for high-voltage, high-speed power switching


    Original     		HR200502 HMJE13009AR HMJE13009AR O-247 120ns Collector-Emi20 183oC 217oC 260oC E13009a 13009a TRANSISTOR MJE13009A 13009a E 13009A NPN Transistor 400v to247 PDF

    13009a

    Abstract: E13009a HMJE13009A MJE13009A
    Text: HI-SINCERITY Spec. No. : HE200206 Issued Date : 2002.02.01 Revised Date : 2005.08.15 Page No. : 1/6 MICROELECTRONICS CORP. HMJE13009A 12 AMPERE NPN SILICON POWER TRANSISTOR Description The HMJE13009A is designed for high-voltage, high-speed power switching


    Original     		HE200206 HMJE13009A HMJE13009A O-220AB 120ns 183oC 217oC 260oC 13009a E13009a MJE13009A PDF