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Brady Worldwide Inc 7130-1-PK B946 7130-1 BK/YW STY-1 EACH
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DigiKey	7130-1-PK	Bulk			1	1 $17.94 10 $17.94 100 $17.94 1000 $17.94 10000 $17.94	Buy Now
RS	7130-1-PK	Package		4 Weeks	1	1 $16.19 10 $16.19 100 $16.19 1000 $16.19 10000 $16.19	Get Quote
CTS Corporation 770101301P RES ARRAY 9 RES 300 OHM 10SIP
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DigiKey	770101301P	Bulk			1,000	1 - 10 - 100 - 1000 $0.64375 10000 $0.64375	Buy Now
Avnet Americas	770101301P	Bulk		16 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	770101301P					1 - 10 - 100 - 1000 $0.643 10000 $0.643	Get Quote
Avnet Abacus	770101301P			18 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Panasonic Electronic Components ERA-2HEC1301P RES SMD 0.25% 1/16W 0402
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DigiKey	ERA-2HEC1301P	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
NorComp 2163-13-01-P2 CONN HEADER VERT 13POS 2MM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2163-13-01-P2	Bulk			1	1 $1.79 10 $1.551 100 $1.3127 1000 $0.85025 10000 $0.74584	Buy Now
Panasonic Electronic Components ERA-2HRC1301P RES SMD 0.25% 1/16W 0402
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ERA-2HRC1301P	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now

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1301P Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
9434 Abstract: transistor 1877 ADC 50 Ghz p 477 RF 1501 RF NPN POWER TRANSISTOR 3 GHZ 200 watts Text: e PTB 20074 14 watts, 1.477–1.501 GHz Cellular Radio RF Power Transistor Description The 20074 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.477 to 1.501 GHz. Rated at 14 watts minimum output power, it may be used for both CW and PEP	Original	1-877-GOLDMOS 1301-PTB 9434 transistor 1877 ADC 50 Ghz p 477 RF 1501 RF NPN POWER TRANSISTOR 3 GHZ 200 watts	PDF
PTB 20245 Abstract: RF NPN POWER TRANSISTOR C 10-12 GHZ Text: e PTB 20245 35 Watts, 2.1–2.2 GHz Wide-Band CDMA Power Transistor Description The 20245 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz frequency band. Rated at 35 watts minimum output power for PEP applications, it is	Original	G-200 1-877-GOLDMOS 1301-PTB PTB 20245 RF NPN POWER TRANSISTOR C 10-12 GHZ	PDF
capacitor siemens 4700 35 Abstract: No abstract text available Text: PTF 10122 50 Watts WCDMA, 2.1–2.2 GHz GOLDMOS Field Effect Transistor Description • The PTF 10122 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for WCDMA applications from 2.1 to 2.2 GHz. It is rated at 50 watts power output, with 11 dB of	Original	1-877-GOLDMOS 1301-PTF10122 capacitor siemens 4700 35	PDF
resistor qbk Abstract: No abstract text available Text: PTF 10122 50 Watts WCDMA, 2.1–2.2 GHz GOLDMOS Field Effect Transistor Description • The PTF 10122 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for WCDMA applications from 2.1 to 2.2 GHz. It is rated at 50 watts power output, with 11	Original	1-877-GOLDMOS 1301-PTF10122 resistor qbk	PDF
transistor rf m 9837 Abstract: No abstract text available Text: e PTF 10114 12 Watts, 1.5 GHz LDMOS Field Effect Transistor Description The 10114 is a common source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.5 GHz. It is rated at 12 watts power output. Nitride surface	Original	G-200, 1-877-GOLDMOS 1301-PTF transistor rf m 9837	PDF
e20231 Abstract: 20231 transistor E101 Text: e E S A E L E -R E R P PTE 20231* 18 Watts, 2.1–2.2 GHz Cellular Radio RF Power Transistor Description The 20231 is a class A/AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz. Rated at 18 watts minimum output power in class AB and 8 watts minimum output power	Original	G-200, 1-877-GOLDMOS 1301-PTE e20231 20231 transistor E101	PDF
RF NPN POWER TRANSISTOR 3 GHZ 200 watts Abstract: No abstract text available Text: e PTB 20175 55 Watts, 1.9–2.0 GHz Cellular Radio RF Power Transistor Description The 20175 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 1.9 to 2.0 GHz. It is rated at 55 watts minimum output power and may be used for both CW and PEP	Original	ATC-100 G-200 1-877-GOLDMOS 1301-PTB RF NPN POWER TRANSISTOR 3 GHZ 200 watts	PDF
ericsson 10159 Abstract: PTF10159 470-860 mhz Power amplifier w Text: PTF 10159 120 Watts, 470–860 MHz GOLDMOS Field Effect Transistor Description The PTF 10159 is an internally matched, common source N-channel enhancement-mode lateral MOSFET intended for large signal television amplifier applications from 470 to 860 MHz. It is rated at 120 watts power	Original	UT-85-25 1-877-GOLDMOS 1301-PTF ericsson 10159 PTF10159 470-860 mhz Power amplifier w	PDF
Untitled Abstract: No abstract text available Text: PRE-RELEASE PTF 10041* 12 Watts, 2.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10041 is a common source N-channel enhancement-mode lateral MOSFET intended for large signal applications from 1.0 to 2.0 GHz. It is rated at 12 watts power output. Nitride surface passivation	Original	1-877-GOLDMOS 1301-PTF	PDF
20191 ic Abstract: No abstract text available Text: e PTB 20191 12 Watts, 1.78–1.92 GHz RF Power Transistor Description The 20191 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.78 to 1.92 GHz. It is rated at 12 watts CW minimum output power, or 15 watts (PEP) output power.	Original	1-877-GOLDMOS 1301-PTB 20191 ic	PDF
PTB 20200 Abstract: No abstract text available Text: e PTB 20167 60 Watts, 850–960 MHz RF Power Transistor Description The 20167 is an NPN, common base RF power transistor intended for 24 Vdc operation from 850 to 960 MHz. Rated at 60 watts minimum output power, it is specifically designed for class C power amplifier	Original	1-877-GOLDMOS 1301-PTB PTB 20200	PDF
hit 215 Abstract: No abstract text available Text: e E S A E L E R E PR HIT 1920-10 PTE 31042* 10 Watts, 1.9–2.0 GHz 50-Ohm Power Hybrid Description The 1920-10 is a 50–ohm power hybrid intended for applications requiring linear power amplification in the PCS frequency range. The part is designed to operate with 50–ohm source and load impedances	Original	50-Ohm 1-877-GOLDMOS 1301-PTE hit 215	PDF
K934 Abstract: LZ9GG31 8c542 VXD1 switch K2961 ZENER3 UCB1300 lcd inverter board schematic MAX1692EUB VXD1 Text: Intel StrongARM* SA-1110 Development Board Schematics May 2000 Phase 5 Order No: 278279-006 Information in this document is provided in connection with Intel® products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel's Terms and Conditions of Sale for such products, Intel assumes no	Original	SA-1110 21-ADV71-71 K-DD-54-25A99-01 54-25A99-01 K934 LZ9GG31 8c542 VXD1 switch K2961 ZENER3 UCB1300 lcd inverter board schematic MAX1692EUB VXD1	PDF
P4917-ND Abstract: capacitor siemens 4700 35 G200 Text: PTF 10015 50 Watts, 300–960 MHz GOLDMOS Field Effect Transistor Description Features The PTF 10015 is a 50 Watt LDMOS FET intended for large signal amplifier applications from 300 to 960 MHz. It operates at 55% efficiency and 13.0 dB of gain. Nitride surface passivation and full	Original	P4917-ND P5276 1-877-GOLDMOS 1301-PTF P4917-ND capacitor siemens 4700 35 G200	PDF

atc 17-33 Abstract: transistor c1213 c1213 transistor CHARACTERISTIC OF TRANSISTOR C1213 G200 capacitor siemens 4700 35 atc 1733 Text: PTF 10036 85 Watts, 860–960 MHz GOLDMOS Field Effect Transistor Description The PTF 10036 is an internally matched, 85 Watt LDMOS FET intended for large signal amplifier applications from 860 to 960 MHz. Nitride surface passivation and full gold metallization ensure	Original	1-877-GOLDMOS 1301-PTF atc 17-33 transistor c1213 c1213 transistor CHARACTERISTIC OF TRANSISTOR C1213 G200 capacitor siemens 4700 35 atc 1733	PDF
10125 Abstract: G200 K1206 rf mosfet ericsson Text: PTF 10125 135 Watts, 1.4–1.6 GHz GOLDMOS Field Effect Transistor Description • The PTF 10125 is an internally matched, common source N-channel enhancement-mode lateral MOSFET intended for linear driver and final applications from 1.4 to 1.6 GHz, such as DAB/DRB. It is rated	Original	K1206 1-877-GOLDMOS 1301-PTF 10125 G200 K1206 rf mosfet ericsson	PDF
smt a1 transistor Abstract: A1234 G200 PTF 10021 Text: PTF 10021 30 Watts, 1.4–1.6 GHz GOLDMOS Field Effect Transistor Description The PTF 10021 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for linear driver and final applications in the 1.4 to 1.6 GHz range such as DAB/DAR. It is	Original	1-877-GOLDMOS 1301-PTF smt a1 transistor A1234 G200 PTF 10021	PDF
TRANSISTOR 955 E Abstract: PTB 20148 35 W 960 MHz RF POWER TRANSISTOR NPN IC 935 965 transistor Text: e PTB 20148 60 Watts, 925–960 MHz Cellular Radio RF Power Transistor Description The 20148 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 925 to 960 MHz. Rated at 60 watts minimum output power, it may be used for both CW and PEP	Original	1-877-GOLDMOS 1301-PTB TRANSISTOR 955 E PTB 20148 35 W 960 MHz RF POWER TRANSISTOR NPN IC 935 965 transistor	PDF
2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM Abstract: 2.4 ghz 5 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM G200 2.4 ghz 4 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM 10149 Text: PTF 10149 70 Watts, 921–960 MHz GOLDMOS Field Effect Transistor Description • • The PTF 10149 is an internally matched, 70 Watt LDMOS FET intended for cellular and GSM amplifier applications from 921–960 MHz. This device operates at 50% efficiency with 16 dB of gain. Nitride	Original	1-877-GOLDMOS 1301-PTF 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM 2.4 ghz 5 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM G200 2.4 ghz 4 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM 10149	PDF
G200 Abstract: No abstract text available Text: PTF 10111 6 Watts, 1.5 GHz GOLDMOS Field Effect Transistor Description The PTF 10111 is a 6 watt LDMOS FET intended for large signal amplifier applications to 1.5 GHz. It operates @ 50% efficiency and 16 dB of gain. Nitride surface passivation and full gold metallization ensure	Original	1-877-GOLDMOS 1301-PTF G200	PDF
Untitled Abstract: No abstract text available Text: PTH 32003 25 Watts, 1.9–2.0 GHz 50-Ohm High-Gain Power Hybrid Description The PTH 32003 is a high–gain 50–ohm power hybrid intended for applications requiring linear amplification and high gain in the PCS frequency range. The part is designed to operate with 50–ohm source	Original	50-Ohm 1-877-GOLDMOS 1301-PTH	PDF
9434 Abstract: PTB 20200 PTB 20171 transistor b 1166 transistor 9350 Text: e PTB 20171 25 Watts, 935–960 MHz Cellular Radio RF Power Transistor Description The 20171 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation from 935 to 960 MHz. Rated at 25 watts minimum output power, it may be used for both CW and PEP	Original	1-877-GOLDMOS 1301-PTB 9434 PTB 20200 PTB 20171 transistor b 1166 transistor 9350	PDF
0930 IC Abstract: No abstract text available Text: PTB 20239 12 Watts, 1465–1513 MHz Cellular Radio RF Power Transistor Description The PTB 20239 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1465 to 1513 MHz. Rated at 12 watts minimum output power, it may be used for both CW	Original	1-877-GOLDMOS 1301-PTB 0930 IC	PDF
JX - 638 Abstract: 20190 UT85-25 UT-85-25 0280 212 010 microstrip Text: e PTB 20190 175 Watts, 470–806 MHz Digital Television Power Transistor Description The 20190 is a class AB, NPN, common emitter RF power transistor intended for 28 Vdc operation across the 470 to 806 MHz UHF TV frequency band. Rated at 175 watts output power, it is specifically	Original	G-200, 1-877-GOLDMOS 1301-PTB JX - 638 20190 UT85-25 UT-85-25 0280 212 010 microstrip	PDF

1301P Search Results

1301P Price and Stock

Brady Worldwide Inc 7130-1-PK

CTS Corporation 770101301P

Panasonic Electronic Components ERA-2HEC1301P

NorComp 2163-13-01-P2

Panasonic Electronic Components ERA-2HRC1301P

1301P Datasheets Context Search

9434

PTB 20245

capacitor siemens 4700 35

resistor qbk

transistor rf m 9837

e20231

RF NPN POWER TRANSISTOR 3 GHZ 200 watts

ericsson 10159

Untitled

20191 ic

PTB 20200

hit 215

K934

P4917-ND

atc 17-33

10125

smt a1 transistor

TRANSISTOR 955 E

2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM

G200

Untitled

9434

0930 IC

JX - 638