ALR060
Abstract: ASI10513 1402 Transistor
Text: ALR060 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: A 4x .062 x 45° The ASI ALR060 is Designed for 1200 – 1400 MHz, L-Band Applications. .040 x 45° C 2xB ØE D F G H FEATURES: I • Internal Input/Output Matching Network • PG = 6.5 dB at 60 W/1400 MHz
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ALR060
ALR060
ASI10513
1402 Transistor
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T1P137
Abstract: P131T
Text: TIP130>T,P131' T,P132 III 'W i y 'l l L TIP135, TIP136, T1P137 TIP130, 131, 132 TIP135, 136,137 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Power Darlingtons and Switching Applications DIM A B C D E F G H JH _ J K L M i N MIN MAX 16,51 10.67
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TIP135,
TIP136,
T1P137
TIP130
TIP130,
T1P137
P131T
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BUK657
Abstract: BUK657-600A BUK657-600B BUK657-600C T0220AB tg 25 600b
Text: N AMER P H I L I P S / D I S C R E T E 2SE D • 1^53=131 G O S O T I S 1 ■ P o w erM O S tra n s is to r Fast R eco very D io de F E T B U K 657-600A B U K 657-600B B U K 657-600C •1- _ o a ~ j 5 GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode
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BUK657-600A
BUK657-600B
BUK657-600C
BUK657
-600A
-600B
-600C
1E-01
1E-02
1E-03
T0220AB
tg 25 600b
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Untitled
Abstract: No abstract text available
Text: L V X v 'J - X /\°7 -M 0S FET LVX S e r ie s Pow er MOSFET M M ttfcm 2SK1812 [F30W30] 300V 30A 131 Case : MTO-3P 7 7 . B fv x m • X 'f " jj- y 'j's n u t m e s & n m w m P - D ate code m f í £ pqp • K1812 ,\ G a te 2 ) D rain S o u rc e o o c / o c ^ y a - ?
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2SK1812
F30W30]
K1812
0DD2500
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Untitled
Abstract: No abstract text available
Text: T O S H IB A INTEGRATED CIRCUIT D IG IT A L IN T E G R A T E D T C 5 2 3 1 2 5 A ? / A J - 10 T O S H IB A TECHNICAL DATA S IL IC O N GATc C S C JIT , T C 5 2 8 1 2 S A ? / A J - 12 CM O S P R E L IM IN A R Y 131 , Q72 W O R D S x SB II S M U L T iP O R T D R A M
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072-words
trans00
TC528126AP/
TC32812SAP/
TCS2S12SAP/AJ
TC528126AP/AJ-A0
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Untitled
Abstract: No abstract text available
Text: EUPEC blE » • 34032^7 OGOICHÖ 'ìlT « U P E C TT 131 N, TD 131 N, DT131 N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values 600, 800 1000, 1200 1400 V V V Vrsm = Vrrm + 100 V Itrmsm Itavm 220 131 140 3600 3200
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DT131
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BB8J
Abstract: No abstract text available
Text: 6086ZWV/9086ZU1V Am29806/Am29809 6 -Bit Chip Select Decoder 9-Bit Equal-to-Comparator DISTINCTIVE CHARACTERISTICS High-speed, expandable, 9-bit "e q u a l-to ” com parator Am29809 H igh-speed co m pa ra to r w ith ch ip se le ct d eco d e r (Am29806) M u ltibus com patible, open-collector acknowledge
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Am29806/Am29809
Am29809
Am29806
03424B
BB8J
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Untitled
Abstract: No abstract text available
Text: 6086ZWV/9086ZU1V Am29806/Am29809 6 -Bit Chip Select Decoder 9-Bit Equal-to-Comparator DISTINCTIVE CHARACTERISTICS High-speed, expandable, 9-bit "e q u a l-to ” com parator Am29809 H igh-speed co m pa ra to r w ith ch ip se le ct d eco d e r (Am29806) M u ltibus com patible, open-collector acknowledge
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Am29806/Am29809
Am29809
Am29806
03424B
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29l50
Abstract: TDC1009 L509 AM29520
Text: 60S1/60S6ZUJV A m 2 9 5 0 9 /L 5 0 9 1 2 x 1 2 Multiplier Accumulator ADVANCED INFORM ATIO N Uses tw o 's com plem ent or unsigned inputs and outputs Round control 27-bit product accum ulation result - 24-bit product - 3-bit extended product O utput register preload
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Am29509/L509
12x12
27-bit
24-bit
Am29509
12-bit
27-bim/oeu
wfr02890
29l50
TDC1009
L509
AM29520
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am2764
Abstract: No abstract text available
Text: 6086ZUIV/9086ZUJV Am29806/Am29809 6-Bit Chip Select Decoder 9-Bit Equal-to-Comparator DISTINCTIVE CHARACTERISTICS • • High-speed, expandable, 9-bit "equal-to" comparator Am29809 High-speed comparator with chip select decoder (Am29806) Multibus compatible, open-collector acknowledge
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6086ZUIV/9086ZUJV
Am29806/Am29809
Am29809
Am29806
IC000010
03424B
am2764
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V01G
Abstract: 8a103 1869 lamp A-4174-24 5034x NE-51G ic 7206 KPR-102 NE2J H 8541
Text: w m m r* 1080 Johnson D rive Buffalo Grove, IL 60089 iv vi fÆ C h i c a g o M in i a t u r e H IM 708-459-3400 Fax 708-459-2708 WHERE INNOVATION COMES TO LIGHT Index A-4174-24.54 A-4174-24X. 54 A-7079B-24.54
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CMD31101UR/C.
CMD31101
CMD31101UR/E.
D31103B.
D31104B.
CMD31104UG.
CMD31104UR/B.
CMD311Q4UR/C.
CMD31104UR/D.
CMD31104UR/E.
V01G
8a103
1869 lamp
A-4174-24
5034x
NE-51G
ic 7206
KPR-102
NE2J
H 8541
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avional 14
Abstract: No abstract text available
Text: F series connectors have been specially developed to meet the most demanding requirements in terms of dimensions, weight and watertightness. This series provides customers with many features and benefits including: ~ - sealed to IP67 for environmental protection when mated according to IEC 60529
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Untitled
Abstract: No abstract text available
Text: Super Fast Recovery Diode Single Diode Wtm SF5L60 OUTLINE 600V 5A Feature • rüIitEEFRD • trr=50ns • Z> lÆ -J U K • H igh Voltage S u p er FRD • trr= 5 0 n s •« 1 IÎE 2kV«|Œ • Full M o ld e d • PFC • P FC P ow er F a cto r C orre ctio n )
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SF5L60
SF5L60
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Untitled
Abstract: No abstract text available
Text: n - n x V 'C X - Y - Super Fast Recovery Diode Single Diode O UTLINE D IM E N S IO N S SF5L60 600V 5A • h iîj ï • t r r 50ns m m •PFC •SR S ÎÜ • 7 5 -rjn - f - j u •T V + B s RATINGS T c = 25°C Absolute Maximum Ratings a i 5 E-fSymbol Conditions
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SF5L60
SF5L60
50HziE5K
J515-5
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M8D45
Abstract: DG 7-119 WHs 73 SM8D41 SM8D45A SM8G41 SM8G45 SM8J41 SM8J45 IT 245
Text: 144 - - 2 * W9\-Wm%-% S M 8 rD, G, J j 4 1 TT-4 13-1 O B 1B fí -f > 8A i T„ —25°C 1 V *r — j: I drm Vtm $¿ ^ SM8D41 SM8G41 SM 8 J4 1 200 400 600 f- Vdsm Vdrm 70 80 (50Hz'60Hz, I tsm l 2-t 24.5 Pc M 5 Ver I gt 0.5 10 V Vc.D 2 A Ih T,lg A//is dv;dt
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SM8D41
SM8G41
SM8J41
H-101
M8D45
DG 7-119
WHs 73
SM8D45A
SM8G45
SM8J41
SM8J45
IT 245
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Untitled
Abstract: No abstract text available
Text: REVISIONS DCN R EV DESCRIPTION DATE 27645 03 R ED R AW TO JEDEC FO R M AT 0 3/1 5/95 T. VU 27945 04 ADD 4 4 LD 0 6/2 5/95 T. VU 28697 05 0 3 /0 5 /9 6 T. VU 60363 06 CHANGE S TAN D O FF DIM FOR 4 4 LD ADD 3 6 LD A PP R O VED 0 7/2 0/97 AA - .01 5 / . 0 2 0
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PSC-4033
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100S
Abstract: DTC120N DTC12E-N DTC12G-N DTM10C-N DTM10E-N DTM10G-N
Text: — 131 — m h 1 14 4 D T M 10 -N îo A o TO-220 M S U U fttt «iC ^ I drm V tm ¡fü T 0 - 2 2 0 •¥" D TM 10C-N D T M 1 0 E-N D T M 1 0 G -N 200 400 600 # fi V ü SM 10 (T c = 83,C ) h t KMS) 100 (50Hz, I tsm ^ A Ko-12V h ') R l =20Q 5 (/ S 5 0 H z ,
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O-220
T0-220)
DTM10C-N
DTM10E-N
DTM10G-N
/S50Hz,
dutyS10%
H-101
100S
DTC120N
DTC12E-N
DTC12G-N
DTM10G-N
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Untitled
Abstract: No abstract text available
Text: SIEMENS 1M X 32-Bit Dynamic RAM Module 2M X 16-Bit Dynamic RAM Module HYM 321160S/GS-60/-70 Advanced Inform ation 1 048 576 words by 32-bit organization (alternative 2 097 152 words by 16-bit) CAS-before-RAS refresh, RAS-only-refresh, Hidden refresh Fast access and cycle time
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32-Bit
16-Bit
321160S/GS-60/-70
16-bit)
110ns
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H-17
Abstract: H-18 H-19 H-22
Text: — io ¿ d 325 ‘> y - x C ZnO-MgO * r± l£ fr > / 9'< n Z ? o *Œ -*« £ 8 H ÊÎiiF.A ttffc o 'S r± iu ifi^ iä a i - 0 .0 5 % X D C lm A ^ M ^ L ^ i è < i) X ? l t J ± ( £ i ) CV3 [V] %•* >v % í& 1EŒ H lP S m iï DC AC150 60Hz CV) [V ] (V )
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FD-12
FD-10
FD-11
H-101
H-17
H-18
H-19
H-22
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Untitled
Abstract: No abstract text available
Text: tb53*131 0022337 0 m BYX52 SERIES 25E D N AMER PHILIPS/DISCRETE MAINTENANCE TYPE r^oi~n RECTIFIER DIODES Silicon rectifier diodes in DO-5 metal envelopes, intended for use in power rectifier applications. The series consists of the following types: Normal polarity cathode to stud : BYX52-300, B YX 52-600, BYX52-1200.
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BYX52
BYX52-300,
BYX52-1200.
BYX52-300R
YX52-600R
BYX52-1200R.
BYX52â
bbS3T31
0025fl3T
bb53T31
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H-17
Abstract: H-18 H-19 H-22 H17133
Text: - 314i l - é PD 90G B, - t • * '(< > * 9 + ? - f * - K ■ SM B PE90GB ^ VfiSM VfifiM V drm /riAV) /r(RMS> /t s m / 2 *i d i/ d l P gm PC(AV) VcfiM I g fm T, T ,lg PD 9 0 G B - 40 , PE 90 G B -40 480 400 400 (. 7V = 9 r e , ( T e = 91 *C , ( 50 / 60 H z ,
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FD-12
FD-10
FD-11
1277MN(
M24P1
H-101
H-17
H-18
H-19
H-22
H17133
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H-17
Abstract: SM10G10 SM8D45A SM8G45 SM8J45A sm10g
Text: S M 8 r D, G, J . 4 5 A TT-6 13- 1OG 1A 8 A, 200V ~-600Y OTO-220AB/' [T« = 25°Cj — ill! ?‘ I drm Vtm 3d 7/ SM8D45A SM8G45 SM8J45A 200 400 600 # VOSM Vdrm Itsm 80 i50Hz, I 2-t 32 P gm 1 I — 2 —10ms) I gt II 1.5 IV 1.5 Ä/.=20ß III 20 IV 20 Vci,
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Jj45A
00V-600V
oTO-220AB/>
SM8D45A
SM8G45
SM8J45A
-10ms)
H-101
H-17
SM10G10
SM8J45A
sm10g
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USM2G44
Abstract: H-17 H-18 H-19 USM2D44 USM3G44 USM3J44
Text: 156- - 2 * USK 12rD, G j4 4 / tt- i 4 1 3 - 7 E 2 a — -MB 2A ¡J-. = 25-C i o rii! TÍ USM2D44 USM2G44 200 400 Vbs.W Vdrm I n RMS) 2 (7 V = 9 rC ) 12/13 (50Hz/60Hz, I tsm V tm Itm — 3 A tí: V & V gt A 2S ICT f g 7V=125*C. 1.6 A ¡H Vi) = 12V, /r.» - 1 A
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USM2D44
USM2G44
50Hz/60Hz,
H-101
USM2G44
H-17
H-18
H-19
USM3G44
USM3J44
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nv470d10
Abstract: NV200D10 NV430D10 NV390D10 NV360D10 NV620D10 TA8250 NV780D10 NV270D10 NV082D10
Text: - 331 h M w v m \0 i i7.5±1 ¡± 1 D C lm A ^ « iI^ ifL L / ^ ¿ # í0 ^ í« l± '< 'J x . í ’f c J E í & l ) ic £ [V] CV) ft ñ í § [H ÍS ^ f± DC AC 50 60Hz • [V] (V) x % ¡i-% V. IMk* (J) Cw) it (v) Ip [A] Jrf — : y ít K ( 8 X 20; í s )
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8x20ps)
NV022D1Ã
NV027D10
NV033D10
NV039D10
NV047D10
H-101
nv470d10
NV200D10
NV430D10
NV390D10
NV360D10
NV620D10
TA8250
NV780D10
NV270D10
NV082D10
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