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    13107 Search Results

    13107 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    5962-85131073A Renesas Electronics Corporation Single 16 and 8, Differential 8-Channel and 4-Channel CMOS Analog MUXs with Active Overvoltage Protection Visit Renesas Electronics Corporation
    5962-8513107XA Renesas Electronics Corporation Single 16 and 8, Differential 8-Channel and 4-Channel CMOS Analog MUXs with Active Overvoltage Protection Visit Renesas Electronics Corporation
    SiT3907AI-CF-33NE-131.072000 SiTime 1 to 220 MHz, ±10 to ±50 ppm Digitally-controlled XO Datasheet
    SIT8008BIL11-33N-13.107200 SiTime 1 to 110 MHz, Low Power Oscillator Datasheet
    SIT1408BI-11-33N-13.10720 SiTime Low Power Active Resonator Drop-In Replacement for 4-pin SMD XTAL Datasheet
    SF Impression Pixel

    13107 Price and Stock

    Molex 0901310785

    CONN HEADER VERT 50POS 2.54MM
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    DigiKey 0901310785 Bag 4,466 1
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    TE Connectivity RL1131-0.75-0-0-0-0

    CABLE 3COND BLACK SHLD METER
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    DigiKey RL1131-0.75-0-0-0-0 3,435 1
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    Jauch Quartz America O 13,10720-JT32CT-A-K-3,3-LF

    OSC TCXO 13.10720MHZ 3.3V HCMOS
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    DigiKey O 13,10720-JT32CT-A-K-3,3-LF Cut Tape 848 1
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    Mill-Max Mfg Corp 311-13-107-41-001000

    CONN RCPT 7POS 0.1 GOLD PCB
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    DigiKey 311-13-107-41-001000 Tube 58 1
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    Molex 0901310774

    CONN HEADER VERT 28POS 2.54MM
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    DigiKey 0901310774 Bag 46 1
    • 1 $5.4
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    13107 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    9713

    Abstract: W24L11 W24L11-70L W24L11-70LL W24L11Q-70LL W24L11S-70L W24L11S-70LL W24L11T-70L W24L11T-70LL
    Text: Preliminary W24L11 128K x 8 CMOS STATIC RAM GENERAL DESCRIPTION The W24L11 is a normal-speed, very low-power CMOS static RAM organized as 131072 × 8 bits that operates on a wide voltage range from 3.0V to 3.6V power supply. This device is manufactured using


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    PDF W24L11 W24L11 9713 W24L11-70L W24L11-70LL W24L11Q-70LL W24L11S-70L W24L11S-70LL W24L11T-70L W24L11T-70LL

    LE28C1001M

    Abstract: LE28C1001T TSOP32
    Text: Ordering number : EN*5129A CMOS LSI LE28C1001M, T-90/12/15 1MEG 131072 words x 8 bits Flash Memory Preliminary Overview Package Dimensions The LE28C1001M, T series ICs are 1 MEG flash memory products that feature a 131072-word × 8-bit organization and 5 V single-voltage power supply operation. CMOS


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    PDF LE28C1001M, T-90/12/15 131072-word 128-byte 3205-SOP32 LE28C1001M] LE28C1001M LE28C1001T TSOP32

    GR12883

    Abstract: No abstract text available
    Text: GR12883 Page 1 of 2 GR12883 DESCRIPTION The GR12883 is a 131072 word by 8 bits 128K x 8 non-volatile CMOS Static Ram, fabricated from advanced silicon gate CMOS technology and a high reliability lithium power cell.The power down circuit is fully automatic and is referenced at 4.5 volts. At this point the GR12883 is write protected by an internal


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    PDF GR12883 GR12883 GR1288rnal \www1\gr12883

    555H

    Abstract: MX29F200B MX29F200T
    Text: MX29F200T/B 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5.0V±10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 55/70/90/120ns Low power consumption - 40mA maximum active current@5MHz


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    PDF MX29F200T/B 256Kx8/128Kx16] 131072x16/262144x8 55/70/90/120ns 7us/12us 16K-Bytex1, 32K-Bytex1, 64K-Byte JUN/15/2001 NOV/12/2001 555H MX29F200B MX29F200T

    W24010-70LL

    Abstract: W24010 W24010S-70LL W24010T-70LL W24010U-70LL W24010V-70LL
    Text: W24010/LL 128K x 8 CMOS STATIC RAM GENERAL DESCRIPTION The W24010 is a normal-speed, very low-power CMOS static RAM organized as 131072 × 8 bits that operates on a single 5-volt power supply. This device is manufactured using Winbond's high performance CMOS technology.


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    PDF W24010/LL W24010 32-pin W24010-70LL W24010S-70LL W24010T-70LL W24010U-70LL W24010V-70LL

    tr8c

    Abstract: TMS28F200
    Text: TMS28F20ÛBZT, TMS28F200BZB 262144 BY 8-BIT/131072 BY 16-BIT BOOT-BLOCK FLASH MEMORIES SWS2dOO - JUNE 1 9 9 4 - REVISED SEPTEMBER 1997 • ■ I I I • • • • • • • • • • Organization . . . 262144 by 8 bits 131072 by 16 bits Array-Blocking Architecture


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    PDF TMS28F20 TMS28F200BZB 8-BIT/131072 16-BIT 96K-Byte 128K-Byte 16K-Byte 28F200B2x70 28F200BZX80 28F200BZX90 tr8c TMS28F200

    581000P

    Abstract: CXK581
    Text: SONY» C X K 5 8 1 0 0 0 P / M -10L/12L/15L -10LL712LL/15LL 131072-word X 8-bit High Speed CMOS Static RAM Description CXK581000P/M is a general purpose high speed CMOS static RAM organized as 131, 072 words by 8 bits. Operating on a single 5V supply, this


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    PDF -10L/12L/15L -10LL712LL/15LL 131072-word CXK581000P/M CXK581000P/M-10L/1OLL 100ns CXK581000P/M-12L/12LL 120ns CXK581000P/M-15L/15LL 150ns 581000P CXK581

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENì% 5084 _ CMOS LSI _ LC322270J. M-80 2 MEG 131072 words x 16 bits DRAM Fast Page Mode, Byte Write Preliminary Overview Package Dimensions T he LC 322270J, M is a CM O S dynam ic RAM operating


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    PDF LC322270J. 322270J, LC322270J, A02925 A02926 A0292S

    data sw 3205

    Abstract: No abstract text available
    Text: Ordering number : EN JK4711 CMOS LSI LC338128P, M, PL, ML-7Q/8o7fÖ 1 MEG 131072 words x 8 bits Pseudo-SRAM Preliminary Overview Package Dimensions The LC338128 series is composed of pseudo static RAM that operate on a single 5 V power supply and is organized


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    PDF JK4711 LC338128P, LC338128 32-pin ML-70/8Q/10 data sw 3205

    Untitled

    Abstract: No abstract text available
    Text: I Ordering number : EN%5085 _ CMOS LSI LC322271J, M-8Ò 2 MEG 131072 words x 16 bits DRAM Fast Page Mode, Byte Write Preliminary Overview Package Dimensions The LC322271J, M is a CMOS dynamic RAM operating on a single 5 V power source and having a 131072 words


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    PDF LC322271J, 40-pin LA0292B A02926

    DIP32

    Abstract: LC371100SP SM-10 SANYO DL
    Text: I Ordering number : ENÎ8 50B7A CMOS LSI No. 5K 5087A SAMYO LC371100SP, SM-10/LC37110OSP, SM-20LV 1 MEG 131072 wordsx 8 bits Mask ROM Internal Clocked Silicon Gate Preliminary Overview Package Dimensions The LC371100SP, SM-10 and LC371100SP, SM-20LV are 1048576-b it M ask Program m able Read Only


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    PDF 50B7A LC371100SP, SM-10/LC37110OSP, SM-20LV SM-10 SM-20LV 1048576-bit DIP32 LC371100SP SANYO DL

    Untitled

    Abstract: No abstract text available
    Text: TMS28F010B 131072 by 8-err FLASH MEMORY SMJS824B - MAY 1995 - REVISED AUGUST 1997 • • • • • • • • Organization . . . 131072 by 8 Bits Pin Compatible With Existing 1-Megabit EPROMs Vqc Tolerance ±10% All Inputs/Outputs TTL Compatible Maximum Access/Minimum Cycle Time


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    PDF TMS28F010B SMJS824B 28F010B-90 28F010B-10 28F010B-12 28F010B-15 168-Hour

    Untitled

    Abstract: No abstract text available
    Text: H I T A C H I / L O G I C / A R R A Y S / N E f l E O E D • 4 4 ^ 2 0 3 0 0 l 4 7 b S HN27C301P/FP Series- T -W -13- I S 131072-word x 8-bit CMOS One Time Electrically Programmable ROM The HN27C301P Series are 131072-word x 8-bit one time electrically programmable ROM. Initially, all bits of the


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    PDF HN27C301P/FP 131072-word HN27C301P

    Untitled

    Abstract: No abstract text available
    Text: HM66204 S x 8-bit High Density CMOS Static RAM Module The HM66204 m odule was designed for pinout and signal compatibility with the HM628128 128K x 8 Monolithic Device. This device is now obsolete and no longer in manufacture.


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    PDF HM66204 ------------------------------131072-word HM628128

    A13G

    Abstract: CXK5T81000ATN CXK5T81000AYN 5 pin A13E power supply circuit 24v ac to 3.6v dc mcoe
    Text: SONY | CXK5T81OOOATN/AYN - 1 0 L L X / 1 2 L L X 131072-word x 8-bit High Speed CMOS Static RAM Description The CXK5T81 OOOATN/AYN is a high Preliminary speed CMOS static RAM organized as 131072-words by 8 -bits. Special feature are low power consumption and


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    PDF CXK5T81OOOATN/AYN 131072-word CXK5T81 131072-words -10LLX -12LLX -10LLX 100ns A13G CXK5T81000ATN CXK5T81000AYN 5 pin A13E power supply circuit 24v ac to 3.6v dc mcoe

    Untitled

    Abstract: No abstract text available
    Text: HM62W8128 Seríes Product Preview 131072-Word x 8-Bit High Speed CMOS Static RAM Ordering Information Description Typ e No. A ccess tim e H M 62W 8128LP-10 100 ns H M 62W 8128LP-12 120 ns H M 62W 8128LP-1O L 100 ns H M 6 2W 81 28 LP-12 L 120 ns H M 62W 8128LP-1O SL


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    PDF HM62W8128 131072-Word 8128LP-10 8128LP-12 8128LP-1O LP-12 8128LFP-10

    Untitled

    Abstract: No abstract text available
    Text: HM62W8127H Series HM62W9127H Series 131072-word x 8/9-bit High Speed CMOS Static RAM HITACHI Rev. 0.0 Dec. 1, 1995 Description The HM62W8127H/HM62W9127H is an asynchronous 3.3 V operation high speed static RAM organized as 131,072-word 8/9-bit. It realize high speed access time 30/35/45 ns with employing 0.8 (Am CMOS


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    PDF HM62W8127H HM62W9127H 131072-word HM62W8127H/HM62W9127H 072-word 400-mil 32/36-pin HM62W8127HJP/HLJP

    Untitled

    Abstract: No abstract text available
    Text: HM628127HB Series 131072-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-350C Z Rev. 3.0 Nov. 19, 1996 Description The HM628127HB is an asyncronous high speed static RAM organized as 128-k word x 8-bit. It realize high speed access time (15/20 ns) with employing 0.8 (Am shrink CMOS process and high speed circuit


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    PDF HM628127HB 131072-word ADE-203-350C 128-k HM628127HB 400-mil 32-pin HM628127HB-25

    628128

    Abstract: No abstract text available
    Text: A K M 628128 Series 131072-Word x 8-Bit High Speed CMOS Static RAM The A K M 628128 is a CMOS static RAM o rg anized 128- kword x 8-bit. It realizes higher density, higher p erfo rm ance and low p o w e r consum ption by em ploying 0 .8 |im H i-C M O S A K M 628128P Series


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    PDF 131072-Word 628128P 6281eselect 628128

    7483 truth table

    Abstract: Truth Table 7483 truth table for 7483 ci 7483
    Text: W24L010A íinbond Electronics Corp. 128K X 8 HIGH SPEED CMOS STATIC RAM GENERAL DESCRIPTION The W24L010A is a high speed, low power CMOS static RAM organized as 131072 x 8 bits that operates on a single 3.3-volt power supply. This device is manufactured using Winbond's high


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    PDF W24L010A W24L010A 32-pin A0-A16 7483 truth table Truth Table 7483 truth table for 7483 ci 7483

    Untitled

    Abstract: No abstract text available
    Text: « 6 I B W Ê Î j f t W231024 Winbond 128K X 8 MASK ROM DESCRIPTION FEATURES The W231024 is a High Speed Mask-Programm­ • Power Consumption : able Read-Only Memory Active : 175mW Typ. Organized as 131072 X 8 Bits and Operates on a Single • Access Time : 200/300 ns (Max.)


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    PDF W231024 175mW W231024 B-1930

    Untitled

    Abstract: No abstract text available
    Text: W24010A l’inbond Electronics Corp. 128K x 8 HIGH SPEED CMOS STATIC RAM GENERAL DESCRIPTION The W24010A is a high speed, low power CMOS static RAM organized as 131072 x 8 bits that operates on a single 5-volt power supply. This device is manufactured using Winbond’s high


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    PDF W24010A W24010A 32-pin CA95134

    Untitled

    Abstract: No abstract text available
    Text: HM628127HB Series 131072-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-350B Z Rev. 2.0 Jun. 27, 1996 Description The HM628127HB is an asyncronous high speed static RAM organized as 128-k word X 8-bit. It realize high speed access time (15/20 ns) with employing 0.8 (Am shrink CMOS process and high speed circuit


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    PDF HM628127HB 131072-word ADE-203-350B 128-k 400-mil 32-pin HM628127HB-25

    Untitled

    Abstract: No abstract text available
    Text: HM62W8127HB Series 131072-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-414 A (Z) Preliminary Rev. 0.1 Jul. 18, 1996 Description The HM62W8127HB is an asyncronous high speed static RAM organized as 128-k word X 8-bit. It realize high speed access time (25/30 ns) with employing 0.8 (Am shrink CMOS process and high speed


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    PDF HM62W8127HB 131072-word ADE-203-414 128-k 400-mil 32-pin