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    1328M Price and Stock

    BUD Industries Inc PN-1328-MB

    BOX PLASTIC GRAY 4.53"L X 3.54"W
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    DigiKey PN-1328-MB Box 175 1
    • 1 $15.5
    • 10 $12.9
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    • 1000 $10.93752
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    Mouser Electronics PN-1328-MB 64
    • 1 $15.5
    • 10 $12.9
    • 100 $11.59
    • 1000 $10.93
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    Newark PN-1328-MB Bulk 1
    • 1 $16.12
    • 10 $13.42
    • 100 $12.06
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    RS PN-1328-MB Bulk 76 1
    • 1 $15.66
    • 10 $13.31
    • 100 $11.12
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    Master Electronics PN-1328-MB 39
    • 1 -
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    • 100 $12.22
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    Sager PN-1328-MB 437 6
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    • 100 $13.15
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    TestEquity LLC PN-1328-MB
    • 1 $13.46
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    TXC Corporation 8WJ-161.1328MBJ-T

    XTAL OSC XO 161.1328MHZ 3.3V CMS
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    DigiKey 8WJ-161.1328MBJ-T Reel 3,000
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    TXC Corporation 8WL-161.1328MBD-T

    XTAL OSC XO 161.1328MHZ 3.3V CMS
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    DigiKey 8WL-161.1328MBD-T Reel 3,000
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    TXC Corporation 8WJ-161.1328MDE-T

    XTAL OSC XO 161.1328MHZ 1.8V CMS
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    DigiKey 8WJ-161.1328MDE-T Reel 3,000
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    Seiko Epson Corporation EG-2102CA-161.1328M-PGPAB

    XTAL OSC SO 161.1328MHZ LVPECL
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    1328M Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1328M Nihon Dempa Kogyo Crystal Controlled Oscillator Original PDF

    1328M Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    W3E16M72S-XBX

    Abstract: W3E32M72S-XBX
    Text: White Electronic Designs W3E16M72S-XBX 16Mx72 DDR SDRAM FEATURES DDR SDRAM Rate = 200, 250, 266 Package: • 219 Plastic Ball Grid Array PBGA , 32 x 25mm BENEFITS 40% SPACE SAVINGS Reduced part count Reduced I/O count • 34% I/O Reduction 2.5V ±0.2V core power supply


    Original     		W3E16M72S-XBX 16Mx72 W3E16M72S-XBX W3E32M72S-XBX PDF

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs WEDPN16M72V-XBX 16Mx72 Synchronous DRAM FEATURES The 128MByte 1Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 5 chips containing 268,435,456 bits. Each chip is internally configured as a quad-bank DRAM with a synchronous interface. Each of


    Original     		WEDPN16M72V-XBX 16Mx72 128MByte 864-bit 100MHz, 125MHz 100MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: WEDPN4M72V-XBX HI-RELIABILITY PRODUCT 4Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits. Each chip is internally configured as a quad-bank DRAM with a


    Original     		WEDPN4M72V-XBX 4Mx72 125MHz WEDPN4M72V-XBX 32MByte 256Mb) 100MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: WEDPN8M72V-XBX HI-RELIABILITY PRODUCT 8Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 134,217,728 bits. Each chip is internally configured as a quad-bank DRAM with


    Original     		WEDPN8M72V-XBX 8Mx72 125MHz WEDPN8M72V-XBX 64MByte 512Mb) 100MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: WEDPN16M72V-XBX HI-RELIABILITY PRODUCT 16Mx72 Synchronous DRAM *ADVANCED FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 128MByte 1Gb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 268,435,456 bits. Each chip is internally configured as a quad-bank DRAM with


    Original     		WEDPN16M72V-XBX 16Mx72 125MHz 128MByte 864-bit 100MHz PDF

    WEDPN4M72V-XBX

    Abstract: No abstract text available
    Text: WEDPN4M72V-XBX 4Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION ! High Frequency = 100, 125MHz ! Package: The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits. Each chip is internally configured as a quadbank DRAM with a synchronous interface. Each of the chip’s


    Original     		WEDPN4M72V-XBX 4Mx72 125MHz 32MByte 256Mb) 216-bit 100MHz, WEDPN4M72V-XBX PDF

    Untitled

    Abstract: No abstract text available
    Text: PreLIMINARY Information L9D112G80BG4 1.2 Gb, DDR - SDRAM Integrated Module IMOD Benefits FEATURES DDR SDRAM Data Rate = 200, 250, 266, and 333 Mbps Package: • 25mm x 25mm, Encapsulated Laminate Ball Grid array (LBGA), 219 balls, 1.27mm pitch. 2.5V ±0.2V Core Power supply


    Original     		L9D112G80BG4 LDS-L9D112G80BG4-A PDF

    WEDPN16M72V-XBX

    Abstract: WEDPN8M72V-XBX 54TSOP WEDPN16M72-XBX
    Text: 16M x 72 SDRAM Multi-Chip Package Optimum Density and Performance in One Package WEDPN16M72V-XBX* Designed to complement PowerPCTM 750/755 and high performance memory controllers see other side for typical application block diagram Performance Features • SDRAM CAS Latency = 3 (125MHz), 2 (100MHz) or 3 (100MHz), 2 (75MHz)


    Original     		WEDPN16M72V-XBX* 125MHz) 100MHz) 75MHz) WEDPN8M72V-XBX* 755sbd WEDPN16M72-XBX MIF2004 WEDPN16M72V-XBX WEDPN8M72V-XBX 54TSOP PDF

    WEDPN

    Abstract: No abstract text available
    Text: WEDPN4M72V-XBX HI-RELIABILITY PRODUCT 4Mx72 Synchronous DRAM PRELIMINARY* FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz* The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits.


    Original     		WEDPN4M72V-XBX 4Mx72 125MHz* 32MByte 256Mb) 216-bit 100MHz 125MHz WEDPN PDF

    Untitled

    Abstract: No abstract text available
    Text: WEDPN8M72V-XBX HI-RELIABILITY PRODUCT 8Mx72 Synchronous DRAM PRELIMINARY* FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 134,217,728 bits. Each chip is internally configured as a quad-bank DRAM with


    Original     		WEDPN8M72V-XBX 8Mx72 125MHz 64MByte 512Mb) 432-bit 100MHz PDF

    DQ75

    Abstract: No abstract text available
    Text: WEDPN4M72V-XBX HI-RELIABILITY PRODUCT 4Mx72 Synchronous DRAM PRELIMINARY* FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits.


    Original     		WEDPN4M72V-XBX 4Mx72 125MHz 32MByte 256Mb) 216-bit 100MHz DQ75 PDF

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs WEDPN8M72V-XBX 8Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION n High Frequency = 100, 125MHz n Package: • 219 Plastic Ball Grid Array PBGA , 32 x 25mm n Single 3.3V ±0.3V power supply n Fully Synchronous; all signals registered on positive


    Original     		8Mx72 125MHz WEDPN8M72V-XBX WEDPN8M72V-XBX 64MByte 512Mb) 100MHz 100MHz, PDF

    Untitled

    Abstract: No abstract text available
    Text: WEDPND16M72S-XBX White Electronic Designs 16Mx72 DDR SDRAM Preliminary* FEATURES BENEFITS n High Frequency = 200, 250, 266MHz n 40% SPACE SAVINGS n Package: n Reduced part count n Reduced I/O count • 219 Plastic Ball Grid Array PBGA , 32 x 25mm n 2.5V ±0.2V core power supply


    Original     		16Mx72 266MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs WEDPN4M72V-XBX 4Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION n High Frequency = 100, 125MHz n Package: The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits. Each chip is internally configured as a quadbank DRAM with a synchronous interface. Each of the chip’s


    Original     		4Mx72 125MHz WEDPN4M72V-XBX WEDPN4M72V-XBX 32MByte 256Mb) 100MHz 100MHz, PDF

    Untitled

    Abstract: No abstract text available
    Text: WEDPN8M72V-133BC 8Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION „ „ High Frequency = 133MHz „ „ Single 3.3V ±0.3V power supply The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 134,217,728 bits. Each chip is internally configured as a quad-bank DRAM


    Original     		WEDPN8M72V-133BC 8Mx72 133MHz WEDPN8M72V-133BC 64MByte 512Mb) PDF

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs WEDPN4M72V-XB2X PRELIMINARY 4Mx72 Synchronous DRAM GENERAL DESCRIPTION FEATURES  High Frequency = 100, 125MHz  Package:  The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing


    Original     		4Mx72 125MHz WEDPN16M64V-XB2X WEDPN4M72V-XB2X 32MByte 256Mb) 100MHz WEDPN4M72V PDF

    W3E16M72S-XBX

    Abstract: W3E32M72S-XBX
    Text: W3E16M72S-XBX White Electronic Designs 16Mx72 DDR SDRAM FEATURES „ DDR SDRAM Rate = 200, 250, 266 „ Package: • 219 Plastic Ball Grid Array PBGA , 32 x 25mm „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ BENEFITS 2.5V ±0.2V core power supply 2.5V I/O (SSTL_2 compatible)


    Original     		W3E16M72S-XBX 16Mx72 W3E16M72S-XBX W3E32M72S-XBX PDF

    AS4DDR16M72PBG

    Abstract: AS4DDR32M72PBG W3E16M72S-XBX E1-E16
    Text: i PEM 1.2 G b SDRAM-DDR Gb Austin Semiconductor, Inc. AS4DDR16M72PBG 16Mx72 DDR SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS „ DDR SDRAM Data Rate = 200, 250, 266, 333Mbps „ Package: „ 40% SPACE SAVINGS „ Reduced part count „ Reduced I/O count


    Original     		AS4DDR16M72PBG 16Mx72 333Mbps M72-8/XT AS4DDR16M72-10/XT 219-PBGA AS4DDR16M72PBG AS4DDR32M72PBG W3E16M72S-XBX E1-E16 PDF

    Diodes Incorporated 17-33

    Abstract: CKE 2009 cke02 RING TERM M6 2,5mm2
    Text: PreLIMINARY Information L9D125G80BG4 2.5 Gb, DDR - SDRAM Integrated Module IMOD Benefits FEATURES DDR SDRAM Data Rate = 200, 250, 266, and 333 Mbps Package: • 25mm x 25mm, Encapsulated Plastic Ball Grid array (PBGA), 219 balls, 1.27mm pitch. 2.5V ±0.2V Core Power supply


    Original     		L9D125G80BG4 LDS-L9D125G80BG4-C Diodes Incorporated 17-33 CKE 2009 cke02 RING TERM M6 2,5mm2 PDF

    Untitled

    Abstract: No abstract text available
    Text: WEDPN4M72V-XBX HI-RELIABILITY PRODUCT 4Mx72 Synchronous DRAM PRELIMINARY* FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits.


    Original     		WEDPN4M72V-XBX 4Mx72 125MHz 32MByte 256Mb) 216-bit 100MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: WEDPN8M72V-XBX HI-RELIABILITY PRODUCT 8Mx72 Synchronous DRAM PRELIMINARY* FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits.


    Original     		WEDPN8M72V-XBX 8Mx72 125MHz 64MByte 512Mb) 432-bit 100MHz PDF

    WEDPN16M72V-XB2X

    Abstract: No abstract text available
    Text: White Electronic Designs WEDPN16M72V-XB2X 16Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION High Frequency = 100, 125, 133MHz Package: • 219 Plastic Ball Grid Array PBGA , 21 x 25mm Single 3.3V ±0.3V power supply Fully Synchronous; all signals registered on positive


    Original     		WEDPN16M72V-XB2X 16Mx72 133MHz WEDPN16M72V-XB2X 128MByte 268anges 525mm2 133MHz PDF

    WEDPN4M72V-XB2X

    Abstract: WEDPN8M72V-XB2X
    Text: White Electronic Designs WEDPN4M72V-XB2X 4Mx72 Synchronous DRAM FEATURES „ „ GENERAL DESCRIPTION High Frequency = 100, 125, 133MHz Package: The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits. Each chip is internally configured as a


    Original     		WEDPN4M72V-XB2X 4Mx72 133MHz 32MByte 256Mb) 216-bit 133MHz WEDPN4M72V-XB2X WEDPN8M72V-XB2X PDF

    AS4DDR16M72PBG

    Abstract: AS4DDR32M72PBG W3E16M72S-XBX
    Text: i PEM 1.2 G b SDRAM-DDR Gb Austin Semiconductor, Inc. AS4DDR16M72PBG 16Mx72 DDR SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS „ DDR SDRAM Data Rate = 200, 250, 266, 333Mbps „ Package: „ 40% SPACE SAVINGS „ Reduced part count „ Reduced I/O count


    Original     		AS4DDR16M72PBG 16Mx72 333Mbps 219-PBGA AS4DDR16M72PBG AS4DDR32M72PBG W3E16M72S-XBX PDF