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PEI-GENESIS TV06RW-21-35BD CONN PLUG HSG FMALE 79POS INLINE
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DigiKey	TV06RW-21-35BD	Bulk	33		1	1 $127.83 10 $103.86 100 $63.92 1000 $63.92 10000 $63.92	Buy Now
PEI-GENESIS CTVS06RF-11-35BD CONN PLUG HSG FMALE 13POS INLINE
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DigiKey	CTVS06RF-11-35BD	Bag	29		1	1 $151.8 10 $123.34 100 $75.9 1000 $75.9 10000 $75.9	Buy Now
PEI-GENESIS TV07RW-21-35BD CONN RCPT HSG FMALE 79POS PNL MT
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DigiKey	TV07RW-21-35BD	Bag	7		1	1 $192.83 10 $156.67 100 $96.42 1000 $96.42 10000 $96.42	Buy Now
TE Connectivity DTS20F21-35BD SQUARE FLANGE RECEPTACLE
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DigiKey	DTS20F21-35BD	Bag			50	1 - 10 - 100 $152.282 1000 $152.282 10000 $152.282	Buy Now
TE Connectivity DTS20F11-35BD SQUARE FLANGE RECEPTACLE
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DigiKey	DTS20F11-35BD	Bag			50	1 - 10 - 100 $110.331 1000 $110.331 10000 $110.331	Buy Now

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135 BD Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
30RF35 Abstract: VJ1206Y104KXB smd transistor equivalent table Text: BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor Rev. 01 — 21 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1.	Original	BLF6G27-135; BLF6G27LS-135 ACPR885k ACPR1980k IS-95 BLF6G27-135 BLF6G27LS-135 30RF35 VJ1206Y104KXB smd transistor equivalent table	PDF
transistor K 1352 Abstract: C5750X7R1H106M TRANSISTOR K 135 VJ1206Y104KXB 30RF35 BLF6G27-135 BLF6G27LS-135 C4532X7R1H475M RF35 722 smd transistor Text: BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor Rev. 02 — 26 May 2008 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance	Original	BLF6G27-135; BLF6G27LS-135 ACPR885k ACPR1980k IS-95 BLF6G27-135 BLF6G27LS-135 transistor K 1352 C5750X7R1H106M TRANSISTOR K 135 VJ1206Y104KXB 30RF35 C4532X7R1H475M RF35 722 smd transistor	PDF
Untitled Abstract: No abstract text available Text: Product Number: 399-10-135-10-008000 Description: Interconnect Header Spring-Loaded Target Connector Right Angle Mount Single Row Through Hole Plating Code: 10 Shell Plating: 10 " Gold over 100 μ" Nickel # Of Pins Mill-Max Part Number 35 399-10-135-10-008000	Original	C36000) C/885 2002/95Annex	PDF
Untitled Abstract: No abstract text available Text: Product Number: 399-10-135-10-008000 Description: Interconnect Header Spring-Loaded Target Connector Right Angle Mount Single Row Through Hole Plating Code: 10 Shell Plating: 10 " Gold over 100 μ" Nickel # Of Pins Mill-Max Part Number 35 399-10-135-10-008000	Original	C36000) C/885 2002/95Annex	PDF
Untitled Abstract: No abstract text available Text: Product Number: 399-10-135-10-008000 Description: Interconnect Header Spring-Loaded Target Connector Right Angle Mount Single Row Through Hole Plating Code: 10 Shell Plating: 10 " Gold over 100 μ" Nickel # Of Pins Mill-Max Part Number 35 399-10-135-10-008000	Original	C36000) C/885Â	PDF
Untitled Abstract: No abstract text available Text: Product Number: 399-10-135-10-008000 Description: Interconnect Header Spring-Loaded Target Connector Right Angle Mount Single Row Through Hole Plating Code: 10 Shell Plating: 10 " Gold over 100 μ" Nickel # Of Pins Mill-Max Part Number 35 399-10-135-10-008000	Original	C36000) C/885 2002/95Annex	PDF
Untitled Abstract: No abstract text available Text: Product Number: 399-10-135-10-008000 Description: Interconnect Header Spring-Loaded Target Connector Right Angle Mount Single Row Through Hole Plating Code: 10 Shell Plating: 10 " Gold over 100 μ" Nickel # Of Pins Mill-Max Part Number 35 399-10-135-10-008000	Original	C36000) C/885Â 2002/95Annex	PDF
Untitled Abstract: No abstract text available Text: Product Number: 349-10-135-00-560000 Description: Interconnect Header .100 Grid; Surface Mount Pin Header Stub Tail Single Row Surface Mount Plating Code: 10 Shell Plating: 10 " Gold over 100 μ" Nickel # Of Pins Mill-Max Part Number 35 349-10-135-00-560000	Original	CG933, CG-933 VRMS/150	PDF
NX7561JB-BC Abstract: NX7561JB-BC-AZ Text: NEC's 1550 nm InGaAsP MQW FP PULSED LASER DIODE IN DIP PACKAGE NX7561JB-BC FOR OTDR APPLICATION 135 mW MIN FEATURES DESCRIPTION • HIGH OUTPUT POWER: Pf = 135 mW MIN at IFP = 1000 mA, Pulse width (PW) = 10ms, Duty = 1% NEC's NX7561JB-BC is a 1550 nm developed strained Multiple Quantum Well (st-MQW) structure pulsed laser diode DIP	Original	NX7561JB-BC NX7561JB-BC NX7561JB-BC-AZ	PDF
BD3950F Abstract: No abstract text available Text: Low Quiescent Current System Regulator BD3950F Description BD3950F incorporates a 5.0V output low drop-out regulator, a reset circuit for micro-controller and a voltage sensing comparator function altogether. Very low quiescent current is 135µA. Due to the	Original	BD3950F BD3950F 150mA 100mA 100mA	PDF
NTH4G39A1 Abstract: PTH8L PTh9c32 NTH5G1M PTH9MO4BH471 bh 8550 posistor 16 PTH8 J04TE NTH4G Text: WILLOW Technologies Sensors Thermistors - temperature sensing PTH9C32 Series PTC Order Code Curie Point °C Resistance Value (Ω)(at 25°C) Temp. (°C) (at 4.7k Ω) AR(120) BB(100) BD(80) 470±50% 135±10 115±10 95±10 PTH9C32AR471Q-T PTH9C32BB471Q-T	Original	PTH9C32 PTH9C32AR471Q-T PTH9C32BB471Q-T PTH9C32BD471Q-T PTH9MO4BH471 TS2F333 PTH9MO4BG471 PTH9MO4BF471 NTH4G39A1 PTH8L NTH5G1M bh 8550 posistor 16 PTH8 J04TE NTH4G	PDF
pin configuration transistor bd140 Abstract: 2SD669 equivalent BUV44 bd140 equivalent transistor MJE15020 bd140 equivalent BD250C EQUIVALENT RCA122 2N6045 NPN POWER DARLINGTON TRANSISTOR BD 136 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium Power Silicon PNP Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 0.15 Adc • BD 136, 138, 140 are complementary with BD 135, 137, 139	Original	BD136 BD138 BD140 BD140-10 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A pin configuration transistor bd140 2SD669 equivalent BUV44 bd140 equivalent transistor MJE15020 bd140 equivalent BD250C EQUIVALENT RCA122 2N6045 NPN POWER DARLINGTON TRANSISTOR BD 136	PDF
TDOTG242LP Abstract: TD242LP OTG242LP MU4032 tdotg242 BGA64 GPIO14 LQFP64 SA1110 TD242L Text: Interfacing TD242LP USB Host/Peripheral/OTG Controller to Intel StrongARM SA1110 Reference Design Version 2.2 TransDimension, Inc. 135 Technology Drive Irvine, California 92618 www.transdimension.com TDI Document Number: MU4009 TransDimension Inc. Interfacing TD242LP to Intel StrongArm SA1110 Processor	Original	TD242LP SA1110 MU4009 TD242LP SA1110 OTG242LP. ZXM61P02F 74AHC1G08 TDOTG242LP OTG242LP MU4032 tdotg242 BGA64 GPIO14 LQFP64 TD242L	PDF
led Concave Abstract: No abstract text available Text: LED LAMP FYLFYL- 8033NURC1A 8033NURC1A Package configuration Features: High instensity General purpose leads RoHs complant. 8.05 .317 Descriptions: Radiation pattern. CATHODE 0.5(.02) 2.54(.1) 25.4(1.0) Max1.0(.04) 11.0(.43) 135° 7.95(.313) Dice material: AlGaInP	Original	8033NURC1A 500pcs 000pcs led Concave	PDF

BLF6G10LS-135R Abstract: f4 smd transistor mobile rf power amplifier transistor RF35 2360d Text: BLF6G10LS-135R Power LDMOS transistor Rev. 01 — 17 November 2008 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance	Original	BLF6G10LS-135R BLF6G10LS-135R f4 smd transistor mobile rf power amplifier transistor RF35 2360d	PDF
8D139 Abstract: bd139 B0139 TRANSISTOR BD 137 transistor BD 378 TRANSISTOR BD 137-10 transistor a110 B0137 D106-V2 BD135 Text: 2SC D • 053SbOS 0004332 4 « S I E G ^ - NPN Silicon Transistors ■ T ^ Ï'O T — BD 135 BD 137 SIEMENS AKTIEN6ESELLSCHAF- BD 139 For AF driver and ou tp u t stages o f m edium performance BD 135, BD 137, and BD 139 are epitaxial NPN silicon planar transistors in TO 126	OCR Scan	fl23SbQS 135/BD 137/BD BD135, B0137, B0139 BD137, BD139 BD136. 8D139 bd139 B0139 TRANSISTOR BD 137 transistor BD 378 TRANSISTOR BD 137-10 transistor a110 B0137 D106-V2 BD135	PDF
BD 139 N Abstract: transistor BD 141 bd139 Text: 2SC D • 023Sfc.GS 0QQ4332 4 c NPN Silicon Transistors SIEG D: BD 135 BD 137 BD 139 SIEMENS AKTIEN6ESELLSCHAF For AF driver and output stages o f m edium performance BD 135, BD 137, and BD 139 are epitaxial NPN silicon planar transistors in TO 126 plastic package 12 A 3 DIN 41869, sheet 4 . The collector is electrically connected to	OCR Scan	023Sfc 0QQ4332 Q62702-D106 Q62702-D106-V1 Q62702-D106-V2 Q62702-D106-V3 Q621758 fl23Sb05 Q00M33b BD 139 N transistor BD 141 bd139	PDF
Untitled Abstract: No abstract text available Text: D S90C 3201 DS90C3201 3.3V 8 MHz to 135 MHz Dual FPD-Link Transmitter T ex a s In s t r u m e n t s Literature Number: SNLS192C Semiconductor DS90C3201 3.3V 8 MHz to 135 MHz Dual FPD-Link Transmitter General Description Features The DS90C3201 is a 3.3V single/dual FPD-Link 10-bit color	OCR Scan	DS90C3201 SNLS192C DS90C3201 10-bit	PDF
TRF-59 Abstract: M27500 22 ML Text: DASH NO CABLES ACCDMMDDATED TRC-50-2 TRC-75-2 8227,BELDEN TWC-78-2 T W E - 124-2 BL782,TIMES BL982,TIMES BL1242,TIMES -7 -9 -A9 A DIM DIM 1 .135 .096 .438 1.716 130 1 . 135 E DIA ASSEMBLE PER .438 .500 TAI-189 .625 .688 ,750 TAI-103 .438 .438 C D FLATS FLATS	OCR Scan	TRC-50-2 TRC-75-2 TWC-78-2 BL782 BL982 BL1242 TAI-189 TAI-103 45-25A 4/PL74B TRF-59 M27500 22 ML	PDF
tfk 135 Abstract: bd139 tfk BD 139 140 BD 139 N tfk bd 137 j BD 139 TFK bd139 tfk 136 BD139 bd 135 Text: V BD 135 • BD 137 • B D 139 Silicon NPN Epitaxial Planar Power Transistors Anw endungen: Allgemein Im NF-Bereich Applications: General in AF-range Features: Besondere Merkmale: • Verlustleistung 8 W	OCR Scan	erlegscheibe32D N125A tfk 135 bd139 tfk BD 139 140 BD 139 N tfk bd 137 j BD 139 TFK bd139 tfk 136 BD139 bd 135	PDF
bd136 N Abstract: BD139 p BD136 BD139 to128 bd140 Complement power transistor bd136 st BD140 BD140 pnp transistor Text: BD136/138/140 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POW ER LINEAR AND SWITCHING APPLICATIONS TO-128 • Complement to B D 135, B D 137 and BD139 respectively A BSO LUTE MAXIMUM RATINGS Characteristic Collector Base Voltage BD136 BD138 BD140 Collector Emitter Voltage BD136	OCR Scan	BD136/138/140 O-128 BD139 BD136 BD138 BD140 500mA, bd136 N BD139 p to128 bd140 Complement power transistor bd136 st BD140 BD140 pnp transistor	PDF
BDR-7 Abstract: No abstract text available Text: BDR-7 DB LECTRO he Type BDR-7 DC Resistance Q 13510% AC Im pe da nce(n ) 150 ±20% Sensitivity(dB) 116±2at1mW Frequency Range(Hz) 250^4000 THD <5% -20 -+ 50 Operating TemperaturefC) Weight (g) 67 f" 2T t0 l6 • 4 Unit:mm - 1-	OCR Scan	-444-U24 -44447Uï -44447U BDR-7	PDF
transistor bd 126 Abstract: TRANSISTOR BD 139 transistor BD 135 BD139 TRANSISTOR BC 137 TRANSISTOR BD 137 BD 139 N bD 106 transistor TRANSISTOR BC 136 transistor bd 711 Text: TELEFUNKEN ELECTRONIC IN electronic 1?E D • Ô^SQO^b O D Q TB 'îS BD 135 • BD 137 • BD 139 Creativeledinotoe^ T -^ -O S Silicon NPN Epitaxial Planar Power Transistors Applications: General in AF-range Features: • Power dissipation 8 W • Matched pairs available	OCR Scan	DIN41869 DIN125A 15A3DIN transistor bd 126 TRANSISTOR BD 139 transistor BD 135 BD139 TRANSISTOR BC 137 TRANSISTOR BD 137 BD 139 N bD 106 transistor TRANSISTOR BC 136 transistor bd 711	PDF
BD139 N Abstract: BD 139 BD139 NPN BD140 BD135 BD136 Text: S C S -T H O M S O N M im [iEgTO *S 135 BD137/BD139 NPN SILICON TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD 135, BD 137 and BD 139 are silicon epitaxial planar NPN transistors in Jedec SOT-32 plastic package, designed for audio amplifiers	OCR Scan	BD135 BD137/BD139 OT-32 BD136 BD138 BD140. BD135 BD137 BD139 BD139 N BD 139 BD139 NPN BD140	PDF

135 BD Search Results

135 BD Price and Stock

PEI-GENESIS TV06RW-21-35BD

PEI-GENESIS CTVS06RF-11-35BD

PEI-GENESIS TV07RW-21-35BD

TE Connectivity DTS20F21-35BD

TE Connectivity DTS20F11-35BD

135 BD Datasheets Context Search

30RF35

transistor K 1352

Untitled

Untitled

Untitled

Untitled

Untitled

Untitled

NX7561JB-BC

BD3950F

NTH4G39A1

pin configuration transistor bd140

TDOTG242LP

led Concave

BLF6G10LS-135R

8D139

BD 139 N

Untitled

TRF-59

tfk 135

bd136 N

BDR-7

transistor bd 126

BD139 N