Contextual Info: SKN 136F THYRISTOR BRIDGE,SCR,BRIDGE Stud Diode 0# 0## 844 444 844 444 $1# 2 34 -5     '  / $1(0 2 67 ( - 84" 444 9"  2 44 :*/  63148 # 63148  6314 # 6314 44 44  631 Symbol Conditions $1(0

K4J10324KE-HC1A

Abstract: K4J10324KE-HC14 T21N K4J10324KE k4j10324 K4J10324KE-HC12
Contextual Info: Target 1Gb GDDR3 SDRAM K4J10324KE 1Gbit GDDR3 SDRAM 136FBGA with Halogen-Free & Lead-Free RoHS compliant Revision 0.1 December 2008 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

HM62V256

Abstract: HM62V256LFP-10SLT HM62V256LFP-10T HM62V256LFP-7SLT HM62V256LFP-8ULT HM62V256LT-10 HM62V256LT-8SL HM62V256LTM-10 HM62V256LTM-10SL HM62V256LTM-7SL
Contextual Info: HM62V256 Series 256 k SRAM 32-kword x 8-bit ADE-203-136F (Z) Rev. 6.0 Nov. 1997 Features • Low voltage operation SRAM Operating Supply Voltage: 2.7 V to 3.6 V • 0.8 µm Hi-CMOS process • High speed Access time: 70/85/100 ns (max) • Low power Standby: 0.15 µW (typ)

Contextual Info: SKN 136F Stud Diode 0# 0## 844 444 844 444 $1# 2 34 -5     '  / $1(0 2 67 ( - 84" 444 9"  2 44 :*/  63148 # 63148  6314 # 6314 44 44  631 Symbol Conditions $1(0 ) 84"  2 87 -44/ :*

m7 diode

Contextual Info: SKN 136F THYRISTOR BRIDGE,SCR,BRIDGE Stud Diode 0# 0## 844 444 844 444 $1# 2 34 -5     '  / $1(0 2 67 ( - 84" 444 9"  2 44 :*/  63148 # 63148  6314 # 6314 44 44  631 Symbol Conditions $1(0

K4j52324qh-hj1a

Abstract: K4J52324QH-HJ08 K4J52324QH K4J52324QH-HC14 K4J52324QH-HJ K4J52324QH-HC12 GDDR3 SDRAM 256Mb K4J52324Q K4J52324QH-HC K4j52324qh-hj0
Contextual Info: 512M GDDR3 SDRAM K4J52324QH 512Mbit GDDR3 SDRAM 136FBGA with Halogen-Free & Lead-Free RoHS compliant May 2008 Revision 1.0 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

Contextual Info: HM62V256 Series 256 k SRAM 32-kword x 8-bit ADE-203-136F (Z) Rev. 6.0 Nov. 1997 Features • Low voltage operation SRAM Operating Supply Voltage: 2.7 V to 3.6 V • 0.8 µm Hi-CMOS process • High speed Access time: 70/85/100 ns (max) • Low power Standby: 0.15 µW (typ)

136f

Abstract: 136-F thyristor
Contextual Info: SKN 136F THYRISTOR BRIDGE,SCR,BRIDGE Stud Diode 0# 0## 844 444 844 444 $1# 2 34 -5     '  / $1(0 2 67 ( - 84" 444 9"  2 44 :*/  63148 # 63148  6314 # 6314 44 44  631 Symbol Conditions $1(0

K4j52324qh-hj1a

Abstract: K4J52324QH-HJ08 K4J52324QH K4J52324QH-HC12 K4J52324Q
Contextual Info: Preliminary 512M GDDR3 SDRAM K4J52324QH 512Mbit GDDR3 SDRAM 136FBGA with Halogen-Free & Lead-Free RoHS compliant March 2008 Revision 0.8 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

diode 744

Contextual Info: SKN 136F power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter leistungselektronik Stud Diode 0# 0## 844 444 844 444 $1# 2 34 -5 

K4J10324KE-HC14

Abstract: K4J10324KE-HC1A K4J10324KE k4j10324 K4J10324KEHC12 k4j10324ke-hc1 T21N K4J10324KE-HC7A K4J10324KE-HC12 gddr3
Contextual Info: 1Gb GDDR3 SDRAM K4J10324KE 1Gbit GDDR3 SDRAM 136FBGA with Halogen-Free & Lead-Free RoHS compliant Revision 1.0 May 2009 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

Contextual Info: SKN 136F THYRISTOR BRIDGE,SCR,BRIDGE Stud Diode OB$; OBB; O WSS <SSS O WSS <SSS CPB;$ Q =RS G L%&T4%9% ,&'9 0+ *+81489+95 +F)(&14+8N CPGO Q <UV G L548H <WSA <SSS 3XA :* Q <SS YIN $>? <URPSW $>B <URPSW $>? <URP<S $>B <URP<S <=SS <=SS $>? <URP<= Symbol Conditions

K4J10324QD

Abstract: k4j10324qd-hj1a K4J10324QD-HC14 K4J10324QD-HC12 GDDR3 SDRAM 256Mb T21N 32MX32 k4j10324qdhj1a gddr3
Contextual Info: 1Gb GDDR3 SDRAM K4J10324QD 1Gbit GDDR3 SDRAM 136FBGA with Halogen-Free & Lead-Free RoHS compliant Revision 1.2 May 2008 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

K8D3216UBC-pi07

Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
Contextual Info: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM

22V10D

Abstract: PALC22V10D-10PC PALC22V10B PALC22V10B-15 PALC22V10D PALC22V10D-10JC
Contextual Info: MbE D CYPRESS SEMICONDUCTOR • aSBTbbE QOGbcieJS 3 E3CYP PRELIMINARY CYPRESS SEMICONDUCTOR PALC22V10D Flash Erasable, Reprogrammable CMOS PAL Device Features Advanced second-generation PAL ar­ chitecture Low power — 90 mA max. standard — 120 mA max. military

NEC asu

Abstract: 13E3h 1442H
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

M37273MF

Abstract: decoder tv M37272EFSP M37273E8SP M37273EFSP M37273M8 M37273M8-XXXSP M37273MF-XXXSP Bc23b 11f01
Contextual Info: MITSUBISHI MICROCOMPUTERS M37273M8–XXXSP, M37273MF–XXXSP M37273E8SP, M37273EFSP SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER with CLOSED CAPTION DECODER and ON-SCREEN DISPLAY CONTROLLER 1. DESCRIPTION The M37273M8-XXXSP and M37273MF-XXXSP are single-chip microcomputers designed with CMOS silicon gate technology. They

P2QFP100-GH-1420

Abstract: IR 1838 3v with 3 pins
Contextual Info: S i GEC P L E S S E Y s i; M i c o n i i c; r o DECEMBER 1996 r s DS4375-2.0 CLA90000 SERIES HIGH DENSITY CMOS GATE ARRAYS INTRODUCTION BENEFITS The CLA90000 family of gate arrays from GEC Plessey Semiconductors GPS) consists of 14 fixed-size arrays with

tv ic M37272

Abstract: m37272m
Contextual Info: MITSUBISHI MICROCOMPUTERS M37272M6H/M8H/MAH/MFH–XXXSP/FP M37272E8SP/FP, M37272EFSP/FP SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER with CLOSED CAPTION DECODER and ON-SCREEN DISPLAY CONTROLLER 1. DESCRIPTION The M37272M6H/M8H/MAH/MFH-XXXSP/FP are single-chip microcomputers designed with CMOS silicon gate technology. They have

ITT 2222 A

Abstract: itt 2222
Contextual Info: Si GEC P L E S S E Y APRIL 1997 S E M I C O N D U C T O R S CLA90000 SERIES HIGH DENSITY CMOS GATE ARRAYS INTRODUCTION BENEFITS The CLA90000 family of gate arrays from GEC Plessey Semiconductors GPS consists of 14 fixed-size arrays with the option of building optimized arrays with up to 1.1 million

ci ob 2269

Abstract: ob 2269 JISC7021 LEG3392 C10-C13
Contextual Info: LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only LIGITEK O FFICE:7F.,NO.208,SEC.3,JHONGYANG Rd.,Tucheng City Taipei Hsien.Taiwan R.O.C TEL: 02 22677686(REP) FAX: (02)22675286, (02)22695616 LED ARRAY LA204W/EG DATA SHEET DOC. NO : QW0905-LA204/EG REV.

lt 8202

Abstract: zytel 1877A asbestos FCI Electronics ob 2269 TA 8202 K JISC7021 LVG2641-1 LVY2641-1
Contextual Info: LIGITEK ELECTRONICS CO.,LTD. PropertyofLigitekOnly LIG ITE K O FFICE:7F.,NO .208,SEC.3,JHONGYANG Rd.,Tucheng City Taipei Hsien.Taiwan R.O.C TEL: 02 22677686(REP) FAX: (02)22675286, (02)22695616 LED ARRAY L A 7 3 B -1 /V G -X -V Y -3 DATA SHEET DOC. NO : QW0905-LA73B-1 A/G.X.VY-3

Ericsson TSR 491 628

Abstract: NT 1307c ericsson TSR 491 641 Ericsson nokia 1600 schematic diagram schematic diagram UPS active power 600 schematic diagram UPS 600 Power free marking code H02 schematic diagram UPS active power 400 tsi620-10gclv
Contextual Info: Tsi620 RapidIO Switch / RapidIO-to-PCI Bridge User Manual Preliminary October 2007 80D7000_MA001_02 Titlepage Trademarks TUNDRA is a registered trademark of Tundra Semiconductor Corporation Canada, U.S., and U.K. . TUNDRA, the Tundra logo, Tsi620, and Silicon Behind the Network, are trademarks of Tundra Semiconductor Corporation.

SA452

Abstract: SA336 SA424 120R S29GL512N SA487 EE8000 a78000a7ffff c58000c5ffff SA4871
Contextual Info: Am29LV2562M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL512N supersedes Am29LV2562M and is the factory-recommended migration path. Please refer to the S29GL512N Data Sheet for specifications and ordering information. Availability of this