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    136F Search Results

    136F Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ISL28136FHZ-T7A Renesas Electronics Corporation 5MHz, Single Precision Rail-to-Rail Input-Output (RRIO) Op Amp Visit Renesas Electronics Corporation
    ISL28136FBZ-T7 Renesas Electronics Corporation 5MHz, Single Precision Rail-to-Rail Input-Output (RRIO) Op Amp Visit Renesas Electronics Corporation
    ISL28136FHZ-T7 Renesas Electronics Corporation 5MHz, Single Precision Rail-to-Rail Input-Output (RRIO) Op Amp Visit Renesas Electronics Corporation
    ISL28136FBZ Renesas Electronics Corporation 5MHz, Single Precision Rail-to-Rail Input-Output (RRIO) Op Amp Visit Renesas Electronics Corporation
    74LS136FPEL-E Renesas Electronics Corporation HD74LS Series Visit Renesas Electronics Corporation
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    136F Price and Stock

    Rochester Electronics LLC 74LS136FPEL-E

    IC GATE OR QUAD 2-INP
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    DigiKey 74LS136FPEL-E Bulk 6,000 407
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    Rochester Electronics LLC MC10E136FNR2G

    IC BINARY COUNTER 6-BIT 28PLCC
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    DigiKey MC10E136FNR2G Bulk 4,426 47
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    Infineon Technologies AG CY8C6136FDI-F42T

    IC MCU 32BIT 512KB FLASH 80WLCSP
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    DigiKey CY8C6136FDI-F42T Digi-Reel 2,000 1
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    • 100 $5.3971
    • 1000 $4.88902
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    CY8C6136FDI-F42T Cut Tape 2,000 1
    • 1 $8.22
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    • 100 $5.3971
    • 1000 $4.88902
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    CY8C6136FDI-F42T Reel 2,000 2,000
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    EBV Elektronik CY8C6136FDI-F42T 11 Weeks 2,000
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    Rochester Electronics LLC MC10H136FNG

    IC BINARY COUNTER 4-BIT 20PLCC
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    DigiKey MC10H136FNG Tube 1,952 16
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    Rochester Electronics LLC CY62136FV30LL-45ZSXAT

    IC SRAM 2MBIT PARALLEL 44TSOP II
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    DigiKey CY62136FV30LL-45ZSXAT Bulk 800 54
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    Find more 136F price and stock on Findchips.com

    136F Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SKN 136F THYRISTOR BRIDGE,SCR,BRIDGE Stud Diode 0# 0## 844 444 844 444 $1# 2 34 -5     '  / $1(0 2 67 ( - 84" 444 9"  2 44 :*/  63148 # 63148  6314 # 6314 44 44  631 Symbol Conditions $1(0


    Original     		PDF

    K4J10324KE-HC1A

    Abstract: K4J10324KE-HC14 T21N K4J10324KE k4j10324 K4J10324KE-HC12
    Text: Target 1Gb GDDR3 SDRAM K4J10324KE 1Gbit GDDR3 SDRAM 136FBGA with Halogen-Free & Lead-Free RoHS compliant Revision 0.1 December 2008 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K4J10324KE 136FBGA 10tCK 10MAX K4J10324KE-HC1A K4J10324KE-HC14 T21N K4J10324KE k4j10324 K4J10324KE-HC12

    HM62V256

    Abstract: HM62V256LFP-10SLT HM62V256LFP-10T HM62V256LFP-7SLT HM62V256LFP-8ULT HM62V256LT-10 HM62V256LT-8SL HM62V256LTM-10 HM62V256LTM-10SL HM62V256LTM-7SL
    Text: HM62V256 Series 256 k SRAM 32-kword x 8-bit ADE-203-136F (Z) Rev. 6.0 Nov. 1997 Features • Low voltage operation SRAM Operating Supply Voltage: 2.7 V to 3.6 V • 0.8 µm Hi-CMOS process • High speed Access time: 70/85/100 ns (max) • Low power Standby: 0.15 µW (typ)


    Original     		PDF HM62V256 32-kword ADE-203-136F HM62V256LFP-10T FP-28DA) HM62V256LFP-7SLT HM62V256LFP-10SLT HM62V256LFP-8ULT HM62V256LT-10 HM62V256LT-8SL HM62V256LFP-10SLT HM62V256LFP-10T HM62V256LFP-7SLT HM62V256LFP-8ULT HM62V256LT-10 HM62V256LT-8SL HM62V256LTM-10 HM62V256LTM-10SL HM62V256LTM-7SL

    Untitled

    Abstract: No abstract text available
    Text: SKN 136F Stud Diode 0# 0## 844 444 844 444 $1# 2 34 -5     '  / $1(0 2 67 ( - 84" 444 9"  2 44 :*/  63148 # 63148  6314 # 6314 44 44  631 Symbol Conditions $1(0 ) 84"  2 87 -44/ :*


    Original     		PDF

    m7 diode

    Abstract: No abstract text available
    Text: SKN 136F THYRISTOR BRIDGE,SCR,BRIDGE Stud Diode 0# 0## 844 444 844 444 $1# 2 34 -5     '  / $1(0 2 67 ( - 84" 444 9"  2 44 :*/  63148 # 63148  6314 # 6314 44 44  631 Symbol Conditions $1(0


    Original     		PDF

    K4j52324qh-hj1a

    Abstract: K4J52324QH-HJ08 K4J52324QH K4J52324QH-HC14 K4J52324QH-HJ K4J52324QH-HC12 GDDR3 SDRAM 256Mb K4J52324Q K4J52324QH-HC K4j52324qh-hj0
    Text: 512M GDDR3 SDRAM K4J52324QH 512Mbit GDDR3 SDRAM 136FBGA with Halogen-Free & Lead-Free RoHS compliant May 2008 Revision 1.0 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K4J52324QH 512Mbit 136FBGA 10MAX K4j52324qh-hj1a K4J52324QH-HJ08 K4J52324QH K4J52324QH-HC14 K4J52324QH-HJ K4J52324QH-HC12 GDDR3 SDRAM 256Mb K4J52324Q K4J52324QH-HC K4j52324qh-hj0

    Untitled

    Abstract: No abstract text available
    Text: HM62V256 Series 256 k SRAM 32-kword x 8-bit ADE-203-136F (Z) Rev. 6.0 Nov. 1997 Features • Low voltage operation SRAM Operating Supply Voltage: 2.7 V to 3.6 V • 0.8 µm Hi-CMOS process • High speed Access time: 70/85/100 ns (max) • Low power Standby: 0.15 µW (typ)


    Original     		PDF HM62V256 32-kword ADE-203-136F HM62V256LFP-10T FP-28DA) HM62V256LFP-7SLT HM62V256LFP-10SLT HM62V256LFP-8ULT HM62V256LT-10 HM62V256LT-8SL

    136f

    Abstract: 136-F thyristor
    Text: SKN 136F THYRISTOR BRIDGE,SCR,BRIDGE Stud Diode 0# 0## 844 444 844 444 $1# 2 34 -5     '  / $1(0 2 67 ( - 84" 444 9"  2 44 :*/  63148 # 63148  6314 # 6314 44 44  631 Symbol Conditions $1(0


    Original     		PDF

    K4j52324qh-hj1a

    Abstract: K4J52324QH-HJ08 K4J52324QH K4J52324QH-HC12 K4J52324Q
    Text: Preliminary 512M GDDR3 SDRAM K4J52324QH 512Mbit GDDR3 SDRAM 136FBGA with Halogen-Free & Lead-Free RoHS compliant March 2008 Revision 0.8 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K4J52324QH 512Mbit 136FBGA 10MAX K4j52324qh-hj1a K4J52324QH-HJ08 K4J52324QH K4J52324QH-HC12 K4J52324Q

    diode 744

    Abstract: No abstract text available
    Text: SKN 136F power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter leistungselektronik Stud Diode 0# 0## 844 444 844 444 $1# 2 34 -5 


    Original     		PDF

    K4J10324KE-HC14

    Abstract: K4J10324KE-HC1A K4J10324KE k4j10324 K4J10324KEHC12 k4j10324ke-hc1 T21N K4J10324KE-HC7A K4J10324KE-HC12 gddr3
    Text: 1Gb GDDR3 SDRAM K4J10324KE 1Gbit GDDR3 SDRAM 136FBGA with Halogen-Free & Lead-Free RoHS compliant Revision 1.0 May 2009 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K4J10324KE 136FBGA 10MAX K4J10324KE-HC14 K4J10324KE-HC1A K4J10324KE k4j10324 K4J10324KEHC12 k4j10324ke-hc1 T21N K4J10324KE-HC7A K4J10324KE-HC12 gddr3

    Untitled

    Abstract: No abstract text available
    Text: SKN 136F THYRISTOR BRIDGE,SCR,BRIDGE Stud Diode OB$; OBB; O WSS <SSS O WSS <SSS CPB;$ Q =RS G L%&T4%9% ,&'9 0+ *+81489+95 +F)(&14+8N CPGO Q <UV G L548H <WSA <SSS 3XA :* Q <SS YIN $>? <URPSW $>B <URPSW $>? <URP<S $>B <URP<S <=SS <=SS $>? <URP<= Symbol Conditions


    Original     		PDF L548H

    K4J10324QD

    Abstract: k4j10324qd-hj1a K4J10324QD-HC14 K4J10324QD-HC12 GDDR3 SDRAM 256Mb T21N 32MX32 k4j10324qdhj1a gddr3
    Text: 1Gb GDDR3 SDRAM K4J10324QD 1Gbit GDDR3 SDRAM 136FBGA with Halogen-Free & Lead-Free RoHS compliant Revision 1.2 May 2008 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K4J10324QD 136FBGA 10MAX K4J10324QD k4j10324qd-hj1a K4J10324QD-HC14 K4J10324QD-HC12 GDDR3 SDRAM 256Mb T21N 32MX32 k4j10324qdhj1a gddr3

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


    Original     		PDF BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm

    NEC asu

    Abstract: 13E3h 1442H
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF R8C/22 R8C/23 REJ09B0251-0200 NEC asu 13E3h 1442H

    M37273MF

    Abstract: decoder tv M37272EFSP M37273E8SP M37273EFSP M37273M8 M37273M8-XXXSP M37273MF-XXXSP Bc23b 11f01
    Text: MITSUBISHI MICROCOMPUTERS M37273M8–XXXSP, M37273MF–XXXSP M37273E8SP, M37273EFSP SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER with CLOSED CAPTION DECODER and ON-SCREEN DISPLAY CONTROLLER 1. DESCRIPTION The M37273M8-XXXSP and M37273MF-XXXSP are single-chip microcomputers designed with CMOS silicon gate technology. They


    Original     		PDF M37273M8 M37273MF M37273E8SP, M37273EFSP M37273M8-XXXSP M37273MF-XXXSP M37273E8SP M37273EFSP decoder tv M37272EFSP Bc23b 11f01

    tv ic M37272

    Abstract: m37272m
    Text: MITSUBISHI MICROCOMPUTERS M37272M6H/M8H/MAH/MFH–XXXSP/FP M37272E8SP/FP, M37272EFSP/FP SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER with CLOSED CAPTION DECODER and ON-SCREEN DISPLAY CONTROLLER 1. DESCRIPTION The M37272M6H/M8H/MAH/MFH-XXXSP/FP are single-chip microcomputers designed with CMOS silicon gate technology. They have


    Original     		PDF M37272M6H/M8H/MAH/MFH M37272E8SP/FP, M37272EFSP/FP M37272M6H/M8H/MAH/MFH-XXXSP/FP M37272E8SP/FP M37272EFSP/FP M37272M6H-XXXSP/FP M37272M6/M8-XXXSP/FP, M37272MA-XXXSP, tv ic M37272 m37272m

    Ericsson TSR 491 628

    Abstract: NT 1307c ericsson TSR 491 641 Ericsson nokia 1600 schematic diagram schematic diagram UPS active power 600 schematic diagram UPS 600 Power free marking code H02 schematic diagram UPS active power 400 tsi620-10gclv
    Text: Tsi620 RapidIO Switch / RapidIO-to-PCI Bridge User Manual Preliminary October 2007 80D7000_MA001_02 Titlepage Trademarks TUNDRA is a registered trademark of Tundra Semiconductor Corporation Canada, U.S., and U.K. . TUNDRA, the Tundra logo, Tsi620, and Silicon Behind the Network, are trademarks of Tundra Semiconductor Corporation.


    Original     		PDF Tsi620TM 80D7000 Tsi620, Tsi620 Ericsson TSR 491 628 NT 1307c ericsson TSR 491 641 Ericsson nokia 1600 schematic diagram schematic diagram UPS active power 600 schematic diagram UPS 600 Power free marking code H02 schematic diagram UPS active power 400 tsi620-10gclv

    SA452

    Abstract: SA336 SA424 120R S29GL512N SA487 EE8000 a78000a7ffff c58000c5ffff SA4871
    Text: Am29LV2562M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL512N supersedes Am29LV2562M and is the factory-recommended migration path. Please refer to the S29GL512N Data Sheet for specifications and ordering information. Availability of this


    Original     		PDF Am29LV2562M S29GL512N S29GL512N SA452 SA336 SA424 120R SA487 EE8000 a78000a7ffff c58000c5ffff SA4871

    22V10D

    Abstract: PALC22V10D-10PC PALC22V10B PALC22V10B-15 PALC22V10D PALC22V10D-10JC
    Text: MbE D CYPRESS SEMICONDUCTOR • aSBTbbE QOGbcieJS 3 E3CYP PRELIMINARY CYPRESS SEMICONDUCTOR PALC22V10D Flash Erasable, Reprogrammable CMOS PAL Device Features Advanced second-generation PAL ar­ chitecture Low power — 90 mA max. standard — 120 mA max. military


    OCR Scan     		PDF PALC22V10D 100-MHz 83-MHz PALC22V10D 15DMB PALC22V10D- PALC22V10Dâ 15KMB PALC22V10D-15LMB 22V10D PALC22V10D-10PC PALC22V10B PALC22V10B-15 PALC22V10D-10JC

    P2QFP100-GH-1420

    Abstract: IR 1838 3v with 3 pins
    Text: S i GEC P L E S S E Y s i; M i c o n i i c; r o DECEMBER 1996 r s DS4375-2.0 CLA90000 SERIES HIGH DENSITY CMOS GATE ARRAYS INTRODUCTION BENEFITS The CLA90000 family of gate arrays from GEC Plessey Semiconductors GPS) consists of 14 fixed-size arrays with


    OCR Scan     		PDF DS4375-2 CLA90000 144-ACB-4040 208-ACB-4545 209-ACB-4545 84-ACB-2828 P2QFP100-GH-1420 IR 1838 3v with 3 pins

    ITT 2222 A

    Abstract: itt 2222
    Text: Si GEC P L E S S E Y APRIL 1997 S E M I C O N D U C T O R S CLA90000 SERIES HIGH DENSITY CMOS GATE ARRAYS INTRODUCTION BENEFITS The CLA90000 family of gate arrays from GEC Plessey Semiconductors GPS consists of 14 fixed-size arrays with the option of building optimized arrays with up to 1.1 million


    OCR Scan     		PDF CLA90000 84-ACB-2828 144-ACB-4040 208-ACB-4545 209-ACB-4545 ITT 2222 A itt 2222

    ci ob 2269

    Abstract: ob 2269 JISC7021 LEG3392 C10-C13
    Text: LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only LIGITEK O FFICE:7F.,NO.208,SEC.3,JHONGYANG Rd.,Tucheng City Taipei Hsien.Taiwan R.O.C TEL: 02 22677686(REP) FAX: (02)22675286, (02)22695616 LED ARRAY LA204W/EG DATA SHEET DOC. NO : QW0905-LA204/EG REV.


    OCR Scan     		PDF LA204W/EG QW0905-LA204/EG 30-Jul LEG3392 54TYP 13BF-f- E101L+ M7047 ci ob 2269 ob 2269 JISC7021 LEG3392 C10-C13

    lt 8202

    Abstract: zytel 1877A asbestos FCI Electronics ob 2269 TA 8202 K JISC7021 LVG2641-1 LVY2641-1
    Text: LIGITEK ELECTRONICS CO.,LTD. PropertyofLigitekOnly LIG ITE K O FFICE:7F.,NO .208,SEC.3,JHONGYANG Rd.,Tucheng City Taipei Hsien.Taiwan R.O.C TEL: 02 22677686(REP) FAX: (02)22675286, (02)22695616 LED ARRAY L A 7 3 B -1 /V G -X -V Y -3 DATA SHEET DOC. NO : QW0905-LA73B-1 A/G.X.VY-3


    OCR Scan     		PDF LA73B-1/VG QW0905-LA73B-1/VG 13-Jul 54TYF LVG2641-1 LVY2641-1 54TYP 25mml 13BF-f- lt 8202 zytel 1877A asbestos FCI Electronics ob 2269 TA 8202 K JISC7021 LVY2641-1