Untitled
Abstract: No abstract text available
Text: F213 Rev 13SEP13 USBR–A–S–F–O–TH USB–AM–S–F–W–TH USB–A–D–S–B–TH USB–A–S–F–B–VU USB-A, USBR-A, USB-AM SERIES STANDARD & RUGGED USB 2.0 SPECIFICATIONS For complete specifications and recommended PCB layouts see www.samtec.com?USB-A,
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13SEP13)
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VS-GB100DA60UP
Abstract: No abstract text available
Text: VS-GB100DA60UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • HEXFRED antiparallel diodes with ultrasoft
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VS-GB100DA60UP
OT-227
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
VS-GB100DA60UP
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Untitled
Abstract: No abstract text available
Text: VS-GB90SA120U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast IGBT , 90 A FEATURES • NPT Generation V IGBT technology • Square RBSOA • Positive VCE(on) temperature coefficient • Fully isolated package • Speed 8 kHz to 60 kHz
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VS-GB90SA120U
OT-227
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: VS-GA200SA60UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses
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PDF
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VS-GA200SA60UP
E78996
OT-227
OT-227electronic
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: VS-GB90DA60U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 90 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • HEXFRED antiparallel diodes with ultrasoft
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Original
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PDF
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VS-GB90DA60U
OT-227
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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vs-gt100da120u
Abstract: No abstract text available
Text: VS-GT100DA120U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse
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PDF
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VS-GT100DA120U
OT-227
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
vs-gt100da120u
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Untitled
Abstract: No abstract text available
Text: VS-GT100DA60U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology with positive temperature coefficient • Speed 4 kHz to 30 kHz • Square RBSOA • 3 s short circuit capability
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PDF
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VS-GT100DA60U
OT-227
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: VS-GA250SA60S www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultralow VCE on , 250 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available • Fully isolated package (2500 VAC)
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VS-GA250SA60S
OT-227
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: 202122 NOTES: I. MATERIAL AND PLATING: CAP GASKET II. : : REVISIONS REV DRAWING NO. A THIRD ANGLE PROJ. BRASS, PLATING = NICKEL 5um MIN. SILICONE RUBBER DESCRIPTION DATE RELEASE TO MFG. 13-Sep-13 ECO - APPR RAK/BG WATERPROOFING STANDARD : IP 67 0.413 [10,50]
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13-Sep-13
M20x1
05-Sep-13
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VS-GT175DA120U
Abstract: No abstract text available
Text: VS-GT175DA120U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 175 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse
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VS-GT175DA120U
OT-227
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
VS-GT175DA120U
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Untitled
Abstract: No abstract text available
Text: VS-GT140DA60U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 140 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 3 s short circuit capability • FRED Pt antiparallel diodes with ultrasoft reverse
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PDF
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VS-GT140DA60U
OT-227
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: 1 2 3 4 5 TECHNICAL CHARACTERISTICS CENTER OF COMPONENT MATERIAL INSULATOR: PBT FLAMABILITY RATING: UL94-V0 COLOR: WHITE CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: GOLD SHIELDING: STEEL TIN PLATED QUALITY CLASS: 3 AS PER CECC 75 301-802
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UL94-V0
13-SEP-13
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