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Catalog Datasheet	MFG & Type	Document Tags	PDF
RF MOSFET Abstract: MRF173 MRF173CQ FML C16 Text: ^s.mi'Con.dacto'i ^P , One, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 The RF MOSFET Line RF Power Field Effect Transistors MRF173 MRF173CQ N-Channel Enhancement Mode MOSFETs Designed for broadband commercial and military applications up to 200 MHz	Original	MRF173 MRF173CQ 13dBTyp) 50Vdc 16AWG, VK200-19/4B 1N5925A pC13q RF MOSFET MRF173 MRF173CQ FML C16	PDF
2SC5772 Abstract: No abstract text available Text: <~*£.mi- ,onau.ctoi L/^roaueti, line. TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2SC5772 Silicon NPN RF Transistor utd^Kir i IUIN ^H^. • High Gain Bandwidth Product S OT- 2 3- 3 L package	Original	2SC5772 13dBTYP, 900MHz 2SC5772	PDF
FSC11LF Abstract: FSX52WF FSC10LF FT6022D FSX51WF FT6012D FT6110D FT6046 FT6021D ft6021 Text: - 140 - :1 f m g FSCIOLF it S ± ii FSCIOX FSC11FA/LG Ä ±ü§ ffl € fr & m ¡s 4 % 1 V* K V * fg "Æ Vg s * X * * (V) 1* (A) % m [ P d /P c h (max) * * m (A) Vg s (V) tt n (Ta=25'C) V g s (c ff) (min) (max) Vd s (V) (V) (V) I ds s (min) (max) V d s	OCR Scan	FSC10LF 250ii FSC10X FSC11FA/LG FSC11LF 95nstyp FT6021 FT6021D 160nstyp FSX52WF FT6022D FSX51WF FT6012D FT6110D FT6046 FT6021D ft6021	PDF
2SK653 Abstract: 2SK652 2SK671 Gv-80dB 2SK674 2SK650 2SK669 150ni 2SK677 2SK649 Text: - 60 - M £ ft ffl € & flt £ f •ç !• 4 1 H 2S K 6 4 8 m X [H# * * V æ fê ft £ * (V) * P d/Pch I gss (W) (max) (A) Vg s (V) ^ (min) (A) (max) (A) Vd s (V) W fî tt ( T a = 2 5 <C ) (min) (V) (max) V d s (V) (V) (min) (S) Id (A) (typ) V d s	OCR Scan	2SK648 2SK649 2SK650 2SK651 150ni 2SK652 2SK665 50MHz 2SK666 2SK765 2SK653 2SK671 Gv-80dB 2SK674 2SK669 2SK677	PDF
3SK35 Abstract: 3SK48 3SK51 3SK40 3SK73 3sk74 3SK41 3SK45 3SK78 3SK59 Text: - 174 - f € sa s tt £ m & ft £ £ ± S fë P d /P c h K T j. 7 H % ft/ V * fr fr (V) (A) * m Ig s s (max) (A) Vg s (V) (min) (A) & tö tt f t (Ta=25<C ) Vpi VP2 (max) V g 2S (max) V g z s (max) (A) (V) (V) (V) (V) (min) (typ) V d s (S) (S) (V) Vg i s	OCR Scan	3SK35 100ll 3SK37 3SK39, 3SK40 3SK61 20dBtyp 200MHz 3KS101 3SK63 3SK35 3SK48 3SK51 3SK73 3sk74 3SK41 3SK45 3SK78 3SK59	PDF
2SK565 Abstract: 2SK541 2SK566 2SK569 2SK561 2SK564 2SK549 2SK572 2SK538 2SK544 Text: - 54 - m e tt ÌÈ. £ m & f y * 1 % K ft X £ P d/ Pc h E ft * V MOS N E 900 DSX ±20 2SK539 SW Reg MOS N 900 DSX ±20 IF J ND 12 D S X -15 S ±20 s a 2SK542 NEC i 2SK543 2SK544 2SK545 - f t 2SK546 LN A , t ' f i7 SW MOS N E F M Tuner, V H F RF MOS	OCR Scan	2SK538 2SK539 ZSK541 2SK542 2SK543 2SK556 2SK557 2SK559 2SK560 2SK622 2SK565 2SK541 2SK566 2SK569 2SK561 2SK564 2SK549 2SK572 2SK538 2SK544	PDF
chw marking sot23 Abstract: sps 1951 transistor trimmer electron 3296 bw 9028 transistor smd marking BA rn ph 4148 zener diode Text: Contents at a Glance VOLUME I Device Index Alphanumeric . . viii Chapter One Selector G u id e . 1.1-1 Chapter Two RF Monolithic Integrated C ircu	OCR Scan		PDF
FLR024FH Abstract: FLX102MH-12 flx202mh-12 FLS09ME FLS09 FLR016XP FLR014XP FLR014FH FSC10FA FLR056XV Text: - 138 - S £ tt € m & i* » f t ; ht * * m £ V P d /P c h 1 * * m K V * (V) (A) * * (W> Ig s s (max) (A) Vg s (V) (min) (A) % (max) V d s (A) (V) ft ¡8 fé (min) (V) (max) V d s (V) (V) (Ta=25°C) (min) (S) Id (A) Vd s (V) Id (A) .2.2 FLM7785-8C/D	OCR Scan	FLM7785-8C/D FLM8596-4C FLM8596-8C FLR014FH FLR014XP FLC311MG-4 FLS31ME 36dBm, FLS50 FLR024FH FLX102MH-12 flx202mh-12 FLS09ME FLS09 FLR016XP FLR014FH FSC10FA FLR056XV	PDF
FLL101ME Abstract: FLL100MK FLL171ME FLM1414-4C fll171 FLM0910-8C FLK202MH-14 PA FLM1011-4C FLK202MH-14 FLM0910-4C Text: - 134 - f =£ m % tt % s & m % ±m FLK202MH-14 FLK202XV Ä±iS FLLIOME ^ 2Ê! fë S P d/P c h % K FIK102XV I K ti !í 13=250 t st (V) ft (A) (V) ft * Ig s s (max) (A) m Vg s (V) (min) (max) Vps (A) (A) (V) (min) (max) Vd s (V) (V) (V) Id (A) (min)	OCR Scan	FLK202MH-14 FLK202XV FLL10ME FLL17MB FLL35ME GaLM1011-8D FLM1112-4C FLM1213-4C FLM1213-4D FLM1213-8C FLL101ME FLL100MK FLL171ME FLM1414-4C fll171 FLM0910-8C FLK202MH-14 PA FLM1011-4C FLK202MH-14 FLM0910-4C	PDF
Untitled Abstract: No abstract text available Text: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs MES FET NES1821P-30 30 W L-S BAND PUSH-PULL POWER GaAs MESFET DESCRIPTION The NES1821P-30 is a 30 W push-pull type GaAs MESFET designed for high power transmitter applications for PCS, DCS and PHS base station systems. It	OCR Scan	NES1821P-30 NES1821P-30	PDF
Untitled Abstract: No abstract text available Text: Audio ICs High-definition sound processor BA3888S The BA3888S is a sound processor 1C that perform s phase and harm onic com pensation on audio signals to accu rately reproduce the “rise” section of audio signals that determ ines the characteristics of the sound, and thus reproduce the original recording as naturally as possible.	OCR Scan	BA3888S BA3888S PIN16 PIN17	PDF
Untitled Abstract: No abstract text available Text: Audio ICs High-definition sound processor BA3888S The BA3888S is a sound processor 1C that performs phase and harmonic compensation on audio signals to accu rately reproduce the “rise” section of audio signals that determines the characteristics of the sound, and thus repro	OCR Scan	BA3888S BA3888S PIN16 FIN17	PDF