Si2304DS
Abstract: 70901
Text: SPICE Device Model Si2304DS Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si2304DS
13-Jul-98
70901
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KD 609
Abstract: No abstract text available
Text: 4 THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION BY AMP INCORPORATED. COPYRIGHT 19 ,19 LOC ALL RIGHTS RESERVED. REVISIONS DIST FT 4 LTR D B C 1 1 .38[. 448] INTERFACIAL MATING DESCRIPTION DATE RLSE -1 PER NPR 5374, WAS 95-7970-25 REV PER EC 0020-463-96
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1C-96-98
09MAV94
13-JUL-98
amp06568
/ssrv026d/dsk04/dept4023/amp06568/edminod
KD 609
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M R029
Abstract: R029
Text: THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. .19 ALL RIGHTS RESERVED. DIST AA 53 REVISIONS LTR .154 [3.91] .160 [4.06] TYP .069 [1.75] 2 PLCS —•(£) (j) -(j) j? ' BUS □ -s a RECEPTACLE c 1 / S 1 1 /
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26JUL99
13JUL98
23FEB95
13JUL98
amp34754
M R029
R029
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Untitled
Abstract: No abstract text available
Text: 4 THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION BY AMP INCORPORATED. COPYRIGHT 19 ,19 LOC ALL RIGHTS RESERVED. DIST FT R EVISIONS 4 LTR D B C 1 1 .38[. 448] INTERFACIAL MATING DESCRIPTION DATE RLSE -1 PER NPR 5 3 74 , WAS 9 5 - 7 9 7 0 - 2 5 REV PER EC 0 0 2 0 - 4 6 3 - 9 6
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2139ons:
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