74244
Abstract: SUD50P04-13L-E3 13L diode SUD45P03-15 SUD50P04-13L SUD45P03-15-E3
Text: Specification Comparison Vishay Siliconix SUD50P04-13L vs. SUD45P03-15 Description: Package: Pin Out: P-Channel, 40 V D-S 175 °C MOSFET TO-252 Identical Part Number Replacements SUD50P04-13L-E3 Replaces SUD45P03-15-E3 SUD50P04-13L-E3 Replaces SUD45P03-15
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SUD50P04-13L
SUD45P03-15
O-252
SUD50P04-13L-E3
SUD45P03-15-E3
SUD50P04-13L
08-Nov-06
74244
13L diode
SUD45P03-15
SUD45P03-15-E3
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SUB45N03-13L
Abstract: No abstract text available
Text: SUB45N03-13L Vishay Siliconix N-Channel 30-V D-S , 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.013 @ VGS = 10 V 45a 0.02 @ VGS = 4.5 V 45a D TrenchFETr Power MOSFETS D 175_C Junction Temperature D TO-263 G G D S Top View S SUB45N03-13L
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SUB45N03-13L
O-263
18-Jul-08
SUB45N03-13L
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Untitled
Abstract: No abstract text available
Text: SUP/SUB45N03-13L Vishay Siliconix N-Channel 30-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.013 @ VGS = 20 V 45a 0.02 @ VGS = 4.5 V 45a D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB45N03-13L Top View N-Channel MOSFET
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SUP/SUB45N03-13L
O-220AB
O-263
SUP45N03-13L
SUB45N03-13L
O-220AB
O-263)
O-263
S-00655--Rev.
27-Mar-00
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SUB45N03-13L
Abstract: S-05010-Rev
Text: SUB45N03-13L Vishay Siliconix N-Channel 30-V D-S , 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.013 @ VGS = 10 V 45a 0.02 @ VGS = 4.5 V 45a D TrenchFETr Power MOSFETS D 175_C Junction Temperature D TO-263 G G D S Top View S SUB45N03-13L
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SUB45N03-13L
O-263
08-Apr-05
SUB45N03-13L
S-05010-Rev
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SUB45N03-13L
Abstract: No abstract text available
Text: SUB45N03-13L Vishay Siliconix N-Channel 30-V D-S , 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.013 @ VGS = 10 V 45a 0.02 @ VGS = 4.5 V 45a D TrenchFETr Power MOSFETS D 175_C Junction Temperature D TO-263 G G D S Top View S SUB45N03-13L
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SUB45N03-13L
O-263
S-05010--Rev.
05-Nov-01
SUB45N03-13L
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SUP45N03-13L
Abstract: No abstract text available
Text: SUP45N03-13L Vishay Siliconix N-Channel 30-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.013 @ VGS = 10 V 45a 0.02 @ VGS = 4.5 V 45a D TO-220AB G DRAIN connected to TAB G D S S Top View N-Channel MOSFET SUP45N03-13L ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
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SUP45N03-13L
O-220AB
08-Apr-05
SUP45N03-13L
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SUB45N03-13L
Abstract: No abstract text available
Text: SUB45N03-13L Vishay Siliconix N-Channel 30-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.013 @ VGS = 10 V 45a 0.02 @ VGS = 4.5 V 45a D TO-263 G DRAIN connected to TAB G D S Top View S SUB45N03-13L N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
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SUB45N03-13L
O-263
100lectual
18-Jul-08
SUB45N03-13L
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Untitled
Abstract: No abstract text available
Text: SUB45N03-13L Vishay Siliconix N-Channel 30-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.013 @ VGS = 10 V 45a 0.02 @ VGS = 4.5 V 45a D TO-263 G DRAIN connected to TAB G D S Top View S SUB45N03-13L N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
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SUB45N03-13L
O-263
SUB45N03-13L
08-Apr-05
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SUB45N03-13L
Abstract: SUP45N03-13L W45A
Text: SUP/SUB45N03-13L Vishay Siliconix N-Channel 30-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.013 @ VGS = 10 V 45a 0.02 @ VGS = 4.5 V 45a D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB45N03-13L Top View N-Channel MOSFET
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SUP/SUB45N03-13L
O-220AB
O-263
SUB45N03-13L
SUP45N03-13L
O-220AB
O-263)
O-263
S-03068--Rev.
12-Feb-01
SUB45N03-13L
SUP45N03-13L
W45A
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Untitled
Abstract: No abstract text available
Text: SUB45N03-13L Siliconix N-Channel 30-V D-S , 175_C MOSFET New Product PRODUCT SUMMARY V(BR)DSS (V) 30 RDS(ON) (W) ID (A) 0.013 @ VGS = 10 V 45A 0.02 @ VGS = 4.5 V 45A D TO-263 G G D S Top View S SUB45N03-13L N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
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SUB45N03-13L
O-263
SUB45N03-13L
S-58971--Rev.
03-Aug-98
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SUP45N03-13L
Abstract: No abstract text available
Text: SUP45N03-13L Vishay Siliconix N-Channel 30-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.013 @ VGS = 10 V 45a 0.02 @ VGS = 4.5 V 45a D TO-220AB G DRAIN connected to TAB G D S S Top View N-Channel MOSFET SUP45N03-13L ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
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SUP45N03-13L
O-220AB
S-05011--Rev.
29-Oct-01
SUP45N03-13L
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SUB45N03-13L
Abstract: No abstract text available
Text: SUB45N03-13L Vishay Siliconix N-Channel 30-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.013 @ VGS = 10 V 45a 0.02 @ VGS = 4.5 V 45a D TO-263 G DRAIN connected to TAB G D S Top View S SUB45N03-13L N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
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SUB45N03-13L
O-263
S-05011--Rev.
29-Oct-01
SUB45N03-13L
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SUP45N03-13L
Abstract: No abstract text available
Text: SUP45N03-13L Vishay Siliconix N-Channel 30-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.013 @ VGS = 10 V 45a 0.02 @ VGS = 4.5 V 45a D TO-220AB G DRAIN connected to TAB G D S S Top View N-Channel MOSFET SUP45N03-13L ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
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SUP45N03-13L
O-220AB
18-Jul-08
SUP45N03-13L
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SQD50P04-13L www.vishay.com Vishay Siliconix P-Channel 40 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SQD50P04-13L
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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diode marking code 13L
Abstract: LLP2513-13L VEMI65AB-HCI 81717 MARKING 13L
Text: VEMI65AB-HCI Vishay Semiconductors 6-Channel EMI-Filter with ESD-Protection FEATURES • Ultra compact LLP2513-13L package • Low package profile of 0.6 mm 12 11 9 10 7 8 • 6-channel EMI-filter 13 • Low leakage current 1 2 3 4 • Line resistance RS = 100 Ω
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VEMI65AB-HCI
LLP2513-13L
2002/95/EC
2002/96/EC
18-Jul-08
diode marking code 13L
VEMI65AB-HCI
81717
MARKING 13L
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marking code vishay
Abstract: VEMI65AA-HCI-GS08 Vishay DaTE CODE z-diode LLP2513-13L VEMI65AA-HCI
Text: VEMI65AA-HCI Vishay Semiconductors 6-Channel EMI-Filter with ESD-Protection Features • • • • • • • Ultra compact LLP2513-13L package Low package profile of 0.6 mm 6-channel EMI-filter e3 Low leakage current Line resistance RS = 100 Ω Typical cut off frequency f3dB = 100 MHz
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VEMI65AA-HCI
LLP2513-13L
2002/95/EC
2002/96/EC
08-Apr-05
marking code vishay
VEMI65AA-HCI-GS08
Vishay DaTE CODE
z-diode
VEMI65AA-HCI
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11-4C1
Abstract: No abstract text available
Text: SQD50P04-13L www.vishay.com Vishay Siliconix Automotive P-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition - 40 RDS(on) () at VGS = - 10 V 0.013 RDS(on) () at VGS = - 4.5 V 0.022
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SQD50P04-13L
O-252
2002/95/EC
AEC-Q101
SQD50P04-13L-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
11-4C1
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SUD50P04-13L-E3
Abstract: SUD50P04-13L 73009
Text: SUD50P04-13L New Product Vishay Siliconix P-Channel 40-V D-S , 175_C MOSFET FEATURES D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature PRODUCT SUMMARY VDS (V) −40 40 rDS(on) (W) ID (A) 0.013 @ VGS = −10 V −60c 0.022 @ VGS = −4.5 V −48
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SUD50P04-13L
O-252
SUD50P04-13L--E3
S-41267--Rev.
05-Jul-04
SUD50P04-13L-E3
SUD50P04-13L
73009
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Untitled
Abstract: No abstract text available
Text: VEMI65AA-HCI Vishay Semiconductors 6-Channel EMI-Filter with ESD-Protection FEATURES • Ultra compact LLP2513-13L package 11 12 9 10 8 • Low package profile of 0.6 mm 7 • 6-channel EMI-filter 13 • Low leakage current 1 2 3 4 5 • Line resistance RS = 100 Ω
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VEMI65AA-HCI
LLP2513-13L
2002/95/EC
2002/96/EC
VEMI65AA-HCI
VEMI65AAany
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: VEMI65AC-HCI Vishay Semiconductors 6-Channel EMI-Filter with ESD-Protection FEATURES • Ultra compact LLP2513-13L package • Low package profile of 0.6 mm 11 12 9 10 8 7 • 6-channel EMI-filter 13 • Low leakage current 1 2 3 4 5 • Line resistance RS = 100 Ω
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VEMI65AC-HCI
LLP2513-13L
2002/95/EC
2002/96/EC
VEMI65AC-HCI
VEMI65AC-HCtrademarks
2011/65/EU
2002/95/EC.
2011/65/EU.
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Untitled
Abstract: No abstract text available
Text: New Product SUD50P04-13L-GE3 Vishay Siliconix P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) () ID (A) 0.013 at VGS = - 10 V - 55.7c 0.022 at VGS = - 4.5 V - 44.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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SUD50P04-13L-GE3
2002/95/EC
O-252
11-Mar-11
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diode marking code 13L
Abstract: No abstract text available
Text: VEMI65AB-HCI www.vishay.com Vishay Semiconductors 6-Channel EMI-Filter with ESD-Protection FEATURES • Ultra compact LLP2513-13L package • Low package profile of 0.6 mm 12 11 9 10 8 7 • 6-channel EMI-filter 13 • Low leakage current 1 2 3 4 5 • Line resistance RS = 100
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VEMI65AB-HCI
LLP2513-13L
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
diode marking code 13L
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SUD50P04-13L-E3
Abstract: SUD50P04-13L
Text: New Product SUD50P04-13L Vishay Siliconix P-Channel 40-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 rDS(on) (Ω) ID (A) 0.013 at VGS = - 10 V - 60a 0.022 at VGS = - 4.5 V - 48 • TrenchFET Power MOSFET • 175 °C Junction Temperature RoHS
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SUD50P04-13L
O-252
SUD50P04-13L-E3
08-Apr-05
SUD50P04-13L-E3
SUD50P04-13L
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Untitled
Abstract: No abstract text available
Text: SUB45N03-13L Siliconix N-Channel 30-V D-S , 175°C MOSFET New Product IQ * « * £ ° ’ PRODUCT SUM M ARY r DS(ON) V (BR)DSS (V) (-2) HP1 \\o * y*6 •d (A) 0.013 @ V GS = 10 V 45a 0.02 @ VGS = 4.5 V 45a 30 D Q TO-263 r i n G D S Top View o s SUB45N03-13L
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SUB45N03-13L
O-263
SUB45N03-13L
S-58971--
03-Aug-98
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